Synthesis of dense, single-crystalline CrO2 nanowire arrays using AAO template-assisted chemical vapor deposition

High-density, vertically aligned CrO(2) nanowire arrays were obtained via atmospheric-pressure CVD assisted by AAO templates. The CrO(2) nanowire arrays show remarkably enhanced coercivity compared with CrO(2) films or bulk. It was found that the length of the nanowires is greatly influenced by the pore diameter of the AAO template used. The growth mechanism and the pore size dependence of the CrO(2) nanowire arrays are discussed. The present method provides a useful approach for the synthesis of CrO(2) nanowire arrays. Such highly ordered nanowire arrays within an AAO template may have important applications in ultrahigh-density perpendicular magnetic recording devices and the mass production of spintronic nanodevices.     

A hot-wire chemical vapor deposition (HWCVD) method for metal oxide and their alloy nanowire arrays

A concept for synthesizing nanowire arrays of transition metal oxides and their alloys using hot wire chemical vapor deposition (HWCVD) is discussed. Here, unlike conventional HWCVD, the hot filaments act as the source of the metal for the synthesis of one dimensional nanostructures. In the present concept, the chemical vapor transport of metal oxides generated by heating the filaments in low amounts of oxygen, onto substrates maintained at lower temperatures leads to the formation of metal oxide nanowires. Experiments performed using tungsten and molybdenum filaments showed that the nucleation density of the resulting metal oxide nanowires could be varied by varying the substrate temperature. Experiments performed using a magnesium source inside the reactor, in addition to tungsten filaments, resulted in the formation of MgWO₄ nanowires. This clearly indicates the possibility of either doping the metal oxide nanowires or alloying during synthesis.     

Silicon nanowire growth on glass substrates using hot wire chemical vapor deposition

We report here, the first observation of silicon nanowire growth via the VLS route at 400 °C using the HWCVD technique with gold (Au) as catalyst. The supersaturation of the alloy droplet, due to a large flux of atomic silicon generated due to efficient dissociation of the silane over the hot wire, leads to the precipitation of Si nanowires. The hot wire process plays a dual role in the entire nanowire growth. Firstly, the atomic hydrogen generated from the hot wire leads to the formation of the metal nanoclusters. Secondly, it offers a continuous supply of silicon atoms enabling efficient diffusion of Si into the Si-Au eutectic alloy leading to the growth of dense silicon nanowires as observed in the SEM. The Raman and TEM data show that the Si nanowires are amorphous in nature. Precise tuning of the hot wire CVD process parameters gives rise to a high density of silicon nanowires having diameters as small as 50 nm and lengths of about a few microns.     

Growth of Ge-Si nanowire heterostructures via chemical vapor deposition

The growth of Ge-Si and Ge-Si nanowire (NW) heterostructures was demonstrated via chemical vapor deposition. Due to the influence of interface energy, differing topographies of the heterostructures were observed. On initially grown Ge NWs, numerous Si NW branches were grown near the tip due to Au migration. However, on initially grown Si NWs, high-density Ge nanodots were observed.     

Synthesis and photoluminescence of zinc sulfide nanowires by simple thermal chemical vapor deposition

We present a synthetic method of zinc sulfide nanowires by a simple and safe reaction of zinc oxide and iron sulfide powders on a gold-coated silicon substrate through chemical vapor transport and condensation. High quality ZnS nanowires with single crystalline wurtzite structures are grown along [0 0 1] direction with diameters in the range of 10–30 nm and lengths up to tens of micrometers. Photoluminescence spectrum shows strong emission near 339 nm. These nanowires with cleaved ends could be a prominent candidate material for a nanoscale cavity as a ultra-violet nanolaser.     

Graphene synthesis by thermal chemical vapor deposition using solid precursor

We report single layer to few layer graphene on polycrystalline nickel by chemical vapor deposition at ambient pressure using solid precursor, camphor. Investigating at a wide range of temperature, it was observed that 870 °C is better for the deposition of single layer graphene on nickel substrate. The percentage of single layer on the substrate reduced significantly with decreasing the deposition temperature. The full width half maximum of the synthesized single layer graphene was 21 cm^?1 and Raman intensity ratio of 2D to G peak was almost nine. The film was transferred to insulating substrate and measured transmittance was 85 %. Raman spectroscopy, Raman mapping, SEM and UV–visible spectrometer measurement were performed for characterization.     

Catalyst-free synthesis of macro-scale ZnO nanonail arrays on Si substrate by simple physical vapor deposition

Macro-scale ZnO nanonail arrays have been synthesized on silicon wafer by a simple physical vapor deposition approach without any catalyst. These synthesized ZnO nanonails grow vertically on the substrate with their caps upside. This probably results from the crowding effect. Each ZnO nanonail has a large hexagonal cap and a thinner shaft of several microns in length. Most of the nanonails are perfect single crystals with wurtzite structure and their preferred growth orientation is along [001] direction. The growth mechanism is VS mechanism and the detailed growth process is also proposed. The macro-scale nanonail arrays on Si substrate could offer novel opportunities for both fundamental research and technological applications.     

Face-selective electrostatic control of hydrothermal zinc oxide nanowire synthesis

Rational control over the morphology and the functional properties of inorganic nanostructures has been a long-standing goal in the development of bottom-up device fabrication processes. We report that the geometry of hydrothermally grown zinc oxide nanowires can be tuned from platelets to needles, covering more than three orders of magnitude in aspect ratio (~0.1-100). We introduce a classical thermodynamics-based model to explain the underlying growth inhibition mechanism by means of the competitive and face-selective electrostatic adsorption of non-zinc complex ions at alkaline conditions. The performance of these nanowires rivals that of vapour-phase-grown nanostructures, and their low-temperature synthesis (<60 °C) is favourable to the integration and in situ fabrication of complex and polymer-supported devices. We illustrate this capability by fabricating an all-inorganic light-emitting diode in a polymeric microfluidic manifold. Our findings indicate that electrostatic interactions in aqueous crystal growth may be systematically manipulated to synthesize nanostructures and devices with enhanced structural control.     

Chemical vapor synthesis of size-selected zinc oxide nanoparticles

ZnO can be regarded as one of the most important metal oxide semiconductors for future applications. Similar to silicon in microelectronics, it is not only important to obtain nanoscale building blocks of ZnO, but also extraordinary purity has to be ensured. A new gas-phase approach to obtain size-selected, nanocrystalline ZnO particles is presented. The tetrameric alkyl-alkoxy zinc compound [CH(3)ZnOCH(CH(3))(2)](4) is chemically transformed into ZnO, and the mechanism of gas-phase transformation is studied in detail. Furthermore, the morphological genesis of particles via gas-phase sintering is investigated, and for the first time a detailed model of the gas-phase sintering processes of ZnO is presented. Various analytical techniques (powder XRD, TEM/energy-dispersive X-ray spectroscopy, magic-angle spinning NMR spectroscopy, FTIR spectroscopy, etc.) are used to investigate the structure and purity of the samples. In particular, the defect structure of the ZnO was studied by photoluminescence spectroscopy.     

Incremental growth of short SWNT arrays by pulsed chemical vapor deposition

Very short arrays of continuous single-wall carbon nanotubes (SWNTs) are grown incrementally in steps as small as 25 nm using pulsed chemical vapor deposition (CVD). In-situ optical extinction measurements indicate that over 98% of the nanotubes reinitiate growth on successive gas pulses, and high-resolution transmission electron microscopy (HR-TEM) images show that the SWNTs do not exhibit segments, caps, or noticeable sidewall defects resulting from repeatedly stopping and restarting growth. Time-resolved laser reflectivity (3-ms temporal resolution) is used to record the nucleation and growth kinetics for each fast (0.2 s) gas pulse and to measure the height increase of the array in situ, providing a method to incrementally grow short nanotube arrays to precise heights. Derivatives of the optical reflectivity signal reveal distinct temporal signatures for both nucleation and growth kinetics, with their amplitude ratio on the first gas pulse serving as a good predictor for the evolution of the growth of the nanotube ensemble into a coordinated array. Incremental growth by pulsed CVD is interpreted in the context of autocatalytic kinetic models as a special processing window in which a sufficiently high flux of feedstock gas drives the nucleation and rapid growth phases of a catalyst nanoparticle ensemble to occur within the temporal period of the gas pulse, but without inducing growth termination.     

Low-temperature synthesis of thin graphite sheets using plasma-assisted thermal chemical vapor deposition system

We report the low-temperature synthesis of thin graphite sheets using a hybrid chemical vapor deposition (HCVD) system that combines plasma and thermal CVD (TCVD). Electron beam deposited Ni films were used as catalytic substrates, and methane was used as a carbon feedstock. The quartz tube was into two regions: core plasma region for efficient dissociation of methane and a TCVD region for thermal synthesis, respectively. After the syntheses at different TCVD temperatures from 550 °C to 900 °C, as-grown films were transferred to transparent polymeric substrates to apply as flexible conductive electrodes. Finally, it was found that thin graphite sheets consisting of ~ 15 graphene layers were synthesized at 600 °C using the HCVD system and could be applicable as transparent conductive films.     

Laterally organized carbon nanotube arrays based on hot-filament chemical vapor deposition

Lateral porous anodic alumina (PAA) templates were used to organize carbon nanotubes (CNTs) grown by a hot-filament assisted chemical vapor deposition (HFCVD) process. For the CNT growth, we used a modified “home-made” HFCVD system with two independently powered filaments which are fitted respectively on the methane (CH₄) gas line, which serves as a carbon precursor and on the hydrogen (H₂) gas line, which acts as an etching agent for the parasitic amorphous carbon. Various activation powers of the hot filaments were used to directly or indirectly decompose the gas mixtures at relatively low substrate temperatures. A parametric study of the HFCVD process has been carried out for optimizing the confined CNTs growth inside the lateral PAA templates.     

Room-temperature synthesis of high-density CuS nanowire arrays by a simple paired cell

High-density CuS nanoparticle nanowire (NPNW) arrays were successfully synthesized at room temperature by a simple paired cell method. The as-prepared nanowire arrays were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS) and transmission electron microscopy (TEM). The results indicate that the nanowire diameter is dependent on the pore size of the used ordered porous anodic alumina (OPAA) template and larger than the corresponding pore diameter of the template due to the corrosion effect of Na2S solution on the template. The nanowire is composed of CuS nanoparticles with hexagonal structure. When the reaction time is long enough, the nanowire is solid and composed of nearly spherical CuS nanoparticles. When the reaction time is short, only middle part of the nanowire is solid and composed of nearly spherical CuS nanoparticles, however, the tops are hollow and mainly composed of flake-like nanoparticles. The formation mechanism of CuS nanoparticle nanowires was proposed to be a heterogeneous nucleation, coalescence, aggregation and filling process.     

Conformal aluminum oxide coating of high aspect ratio structures using metalorganic chemical vapor deposition

The metalorganic chemical vapor deposition of aluminum oxide has been studied over a wide process parameter range. Electrical properties of as-grown and annealed layers have been investigated using planar aluminum/aluminum oxide/silicon capacitors. The best processing conditions resulted in a leakage current of 10 nA/cm² at an equivalent oxide thickness of 3.6 nm. In addition, the film conformality was evaluated on silicon trench structures with aspect ratios of up to 60. Excellent step coverage of over 90% (thickness at trench bottom to thickness at trench middle) was achieved at temperatures below 400 °C and a pressure of 100 Pa. After annealing the electrical properties of these layers, analyzed on planar test structures, were comparable to the results obtained at higher deposition temperature.     

Hydrothermal synthesis of titanate nanowire arrays

A simple templateless synthesis strategy for titanate nanowire arrays was developed by employing hydrothermal reactions. Hydrothermal treatment of metallic titanium powder with H₂O₂ in a 10 M NaOH solution produced a new sodium titanate compound, Na₂Ti₆O₁₃·xH₂O (x ∼ 4.2), as arrays of nanowires of lengths up to 1 mm. The nanowires were characterized by using XRD, SEM, TGA, and TEM. The nanowires have exceptionally large aspect ratios of 5000 or higher, and they can form arrays over a large area of 2 × 3 cm². Investigations on the reaction products in varied conditions indicate that the array formation requires simultaneously controlled formation and crystal growth rates of the Na₂Ti₆O₁₃·xH₂O phase.     

Combustion chemical vapor deposition

In this paper, flame‐pyrolytic treatment methods of metal surfaces are compared to vacuum‐based CVD processes. There is a practical consideration of the aforementioned methods. The layers formed were analyzed by scanning electron microscopy, changes in properties such as surface energy and adhesion of subsequent layers of paint were detected by measurement.