共查询到20条相似文献,搜索用时 78 毫秒
1.
半导体硅片清洗工艺发展方向 总被引:6,自引:0,他引:6
闫志瑞 《电子工业专用设备》2004,33(9):23-26
对半导体硅片传统的RCA清洗办法中各种清洗液的清洗原理、清洗特点、清洗局限以及清洗对硅片表面微观状态的影响进行了详细的论述,同时在此基础上,对新的清洗办法(改进的RCA清洗办法)进行了一定的说明,指出了硅片清洗工艺的发展方向。 相似文献
2.
3.
简要介绍了随着工艺节点的缩小,传统RCA清洗方法在硅片清洗工艺中的局限性和弊端,进而提出了以CO2为介质的新型干冰微粒喷射清洗方法。从CO2的物理特性出发,论述了CO2流经喷枪后形成干冰微粒的机理,并简要分析了干冰微粒喷射技术对颗粒污染物和有机污染物的清洗机理。在此基础上,介绍了自主研发的一台基于干冰微粒喷射技术的半导体清洗设备,对该设备的结构和各部分的作用作了简要介绍,论述了使用该设备对硅片进行清洗的工艺流程。通过对比实验发现,采用压强为8 MPa、纯度为5N的CO2作为气源,喷嘴前压强设置为11 MPa,使用该设备可以达到很好的清洗效果。 相似文献
4.
5.
6.
对硅片清洗设备的日常维护从清洗工艺的角度进行了分析,并对具体问题的处理方案进行了阐述,从而使清洗设备工作更加稳定。 相似文献
7.
8.
对两种不同清洗方法的工作原理、清洗效果和适用范围等特点进行了分析。不同的工艺应采用不同的清洗方法才能获得最佳效果。介绍了硅片清洗机的清洗工艺和腐蚀工艺。指出了硅片清洗工艺的发展趋势。 相似文献
9.
10.
随着半导体制造关键尺寸的继续缩小,硅片表面清洗要求变得更加严格。当前这一要求包括有效地去除硅片表面的纳米微粒(<100nm),并控制主要金属杂质不超过1E+10原子/cm~2。传统的擦片机和兆声湿式批量清洗工艺面临达到这些目标的挑战。单片清洗澡机在硅片表面产生更加均匀的声强分布,更有效地去除了纳米微粒。介绍了湿式批量洗洗机和单片清洗澡机的兆声清洗效果。湿式批量浸泡术和兆声能量单片清洗机结合可以有效地去80mm磨料微粒。 相似文献
11.
The high inherent surface roughness of as-deposited polycrystalline diamond films has made effective planarization processing
of these films essential for most industrial applications. We have investigated the efficacy of ion beam sources for planarization
in an electron cyclotron resonance plasma system using both direct substrate biasing and an accelerating grid system. Rough
polycrystalline diamond films were synthesized using hot filament chemical vapor deposition. Both the etching rates and the
resultant surface roughnesses were found to decrease as the angle of incidence (relative to the substrate surface normal)
of the ion beam was increased. In the case of direct biasing of the sample, acicular features were observed following processing
at higher incident angles. The use of double ion-extraction grids in conjunction with concomitant sample rotation was found
to produce more uniform planarization of the diamond films. The rate of surface roughness reduction was found to be nonlinear
and decreased with time. For both ion extraction methods investigated, the average film roughness (Ra) was significantly reduced from 0.2 to 0.05–0.06 μm. 相似文献
12.
J. N. Johnson L. A. Almeida J. D. Benson J. H. Dinan M. Martinka 《Journal of Electronic Materials》1998,27(6):657-660
CdZnTe wafers were inserted into a multi-chamber processing facility without prior preparation, cleaned by exposure to an
electron cyclotron resonance Ar/H2 plasma, and used as substrates for molecular beam epitaxy of HgCdTe. Changes induced in the wafer near-surface region during
the cleaning step were monitored using in situ spectroscopic ellipsometry. Ellipsometric data were subsequently modeled to provide the time evolution of the thickness of
a native overlayer. Auger electron spectra were consistent with surfaces free of residual contamination and which had the
stoichiometry of the underlying bulk. Surface roughness values of 0.4 nm were obtained ex situ using interferometric microscopy. Electron diffraction patterns of plasma prepared wafers heated to 185°C (the temperature
required for HgCdTe molecular beam epitaxy) were streaked. Structural and electrical characteristics of epilayers grown on
these substrates were found to be comparable to those deposited on wafers prepared using a conventional wet chemical process.
This demonstrates an important step in an all-vacuum approach to HgCdTe detector fabrication. 相似文献
13.
14.
J. Hong J. W. Lee C. R. Abernathy S. J. Pearton C. Constantine W. S. Hobson F. Ren 《Journal of Electronic Materials》1997,26(11):1303-1309
Etch rates for InGaP and AlGaP are examined under electron cyclotron resonance (ECR) conditions in Cl2/Ar, BCl3/Ar, BCl3/N2, ICl/Ar, and IBr/Ar discharges. All the plasmas except IBr/Ar provide rapid etching of InGaP at rates above 1 μm min−1. ICl/Ar provides the highest etch rates. Unlike the Cl2/Ar and BCl3-based chemistries, the rates in ICl/Ar and IBr/Ar are almost independent of microwave power in the range 400–1000 W. Much
lower rates were obtained for AlGaP in every discharge due to the greater difficulties in bond breaking that must precede
formation and desorption of the etch products. 相似文献
15.
Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long-wavelength infrared HgCdTe on Si 总被引:4,自引:0,他引:4
P. Boieriu C. H. Grein J. Garland S. Velicu C. Fulk A. Stoltz L. Bubulac J. H. Dinan S. Sivananthan 《Journal of Electronic Materials》2006,35(6):1385-1390
We present extended results on the use of a hydrogen plasma to passivate the effects of defects in long-wave ir HgCdTe/Si.
Annealed and as-grown epilayers, in situ doped with indium, were exposed to a hydrogen plasma generated in an electron cyclotron
resonance (ECR) reactor. Secondary ion mass spectrometry was used to measure the extent of hydrogen incorporation into the
epilayers. Hall and photoconductive lifetime measurements were used to assess the efficacy of passivation. The passivation
of defects responsible for the scattering and recombination of electrical carriers was observed for most ECR conditions over
a range of dislocation densities. 相似文献
16.
J. N. Johnson L. A. Almeida M. Martinka J. D. Benson J. H. Dinan 《Journal of Electronic Materials》1999,28(6):817-820
Without any additional preparation, Cd1−yZnyTe (211)B (y∼3.5%) wafers were cleaned by exposure to an electron cyclotron resonance (ECR) Ar/H2 plasma and used as substrates for HgCdTe molecular beam epitaxy. Auger electron spectra were taken from as-received wafers,
conventionally prepared wafers (bromine: methanol etching, followed by heating to 330–340°C), and wafers prepared under a
variety of ECR process conditions. Surfaces of as-received wafers contained ∼1.5 monolayers of contaminants (oxygen, carbon,
and chlorine). Conventionally prepared wafers had ∼1/4 monolayer of carbon contamination, as well as excess tellurium and/or
excess zinc depending on the heating process used. Auger spectra from plasma-treated CdZnTe wafers showed surfaces free from
contamination, with the expected stoichiometry. Stoichiometry and surface cleanliness were insensitive to the duration of
plasma exposure (2–20 s) and to changes in radio frequency input power (20–100 W). Reflection high energy electron diffraction
patterns were streaked indicating microscopically smooth and ordered surfaces. The smoothness of plasma-etched CdZnTe wafers
was further confirmed ex situ using interferometric microscopy. Surface roughness values of ∼0.4 nm were measured. Characteristics of HgCdTe epilayers
deposited on wafers prepared with plasma and conventional etching were found to be comparable. For these epilayers, etch pit
densities on the order of 105 cm−2 have been achieved. ECR Ar/H2 plasma cleaning is now utilized at Night Vision and Electronic Sensors Directorate as the baseline CdZnTe surface preparation
technique. 相似文献
17.
Frédéric Lanois Dominique Planson Marie-Laure Locatelli Patrick Lassagne Claude Jaussaud Jean-Pierre Chante 《Journal of Electronic Materials》1999,28(3):219-224
This paper deals with the influence of the oxygen additive on the fluorinated plasma etch rate of silicon carbide. The assumption
according to which the oxygen has a direct contribution to silicon carbide etching, by chemical reaction with carbon atoms,
is generally reported in the literature. Our etching experiments are performed in a distributed electron cyclotron resonance
reactor, on both 3C- and 6H-SiC. An SF6/O2 gas mixture (avoiding the presence of C species in the plasma), fluorine saturation conditions and constant ion bombardment
energy and flux are used, allowing the study of O2 contribution exclusively. In these conditions, our results demonstrate the neutrality of O2 on SiC etching mechanisms. These results will be discussed reinfored both by several other experimental observations. 相似文献
18.
Robert C. Keller M. Seelmann-Eggebert H. J. Richter 《Journal of Electronic Materials》1996,25(8):1270-1275
An approach is presented which eliminates the problems caused by hydrocarbon polymer deposition during etching Hg1-x CdxTe with CH4/H2 based plasmas. We find that the addition of N2 to the plasma inhibits polymer deposition in the chamber and on the sample. We speculate that atomic nitrogen formed from
N2 in the plasma has several beneficial effects: the elimination of polymer precursors, the reduction of the atomic hydrogen
concentration, and a potential increase of methyl radical concentration. Evidence for the reaction between the nitrogen and
the polymer precursors is presented. It is also demonstrated that the addition of N2 to CH4/H2 based electron cyclotron resonance (ECR) plasmas used to etch HgCdTe eliminates the roughness normally formed during etching
and results in a steadier etch rate. 相似文献
19.
K. A. Harris D. W. Endres R. W. Yanka L. M. Mohnkern A. R. Reisinger T. H. Myers A. N. Klymachyov C. M. Vitrus N. S. Dalal 《Journal of Electronic Materials》1995,24(9):1201-1206
In order to form HgTe-CdTe superlattice diode arrays, a well-controlled etch process must be developed to form mesa structures
on HgTe-CdTe superlattice layers. Wet etch processes result in nonuniform, isotropic etch profiles, making it difficult to
control etch depth and diode size. In addition, surface films such as a Te-rich layer may result after wet etching, degrading
diode performance. Recently, a dry etch process for HgTe-CdTe superlattice materials has been developed at Martin Marietta
using an electron cyclotron resonance plasma reactor to form mesa diode structures. This process results in uniform, anisotropic
etch characteristics, and therefore may be a better choice for etching superlattice materials than standard wet etch processes.
In this paper, we will present a comparison of etch processes for HgTe-CdTe superlattice materials using electron microscopy,
scanning tunneling microscopy, surface profilometry, and infrared photoluminescence spectroscopy to characterize both wet
and dry etch processes. 相似文献
20.
A. J. Stoltz J. D. Benson J. B. Varesi M. Martinka M. J. Sperry A. W. Kaleczyc L. A. Almeida P. R. Boyd J. H. Dinan 《Journal of Electronic Materials》2004,33(6):684-689
It has been observed in semiconductor processing that the etch rates for materials subjected to an electron-cyclotron resonance
(ECR) plasma change with the total sample area. This phenomenon is known as loading. Loading effects can result in pattern
definition errors during micromachining. In argon/hydrogen plasmas, designed to etch II–VI materials, loading appears to primarily
affect photoresist deterioration. Using an 80% argon-20% hydrogen gas chemistry optimized for HgCdTe, we observe a factor
of 2 variation in photoresist etch rate. Loading may also affect semiconductor etch rates to a lesser extent. The observed
trends suggest that radical changes in the plasma are the likely cause of this phenomenon. 相似文献