共查询到19条相似文献,搜索用时 62 毫秒
1.
2.
研究了MgO掺杂对ZnO压敏电阻电性能的影响。结果表明,MgO含量增加,压敏场强E1ma=V1mA/d上升,通流能力增强,非线性指数α和漏电流IL变化不大。文中还对上述结果进行了理论分析。 相似文献
3.
SnO2压敏电阻的研究 总被引:4,自引:0,他引:4
研究了Co2O3的含量对SnO2.Co2O3.Ta2O5系列压敏电阻性能的影响。实验发现,在温度为1350℃下烧成的99.2%SnO2+0.75%Co2O3+0.05%Ta2o5材料具有最大的击穿电压。应用晶界缺陷模型解释了SnO2.Co2O3.Ta2O5压敏电阻产生肖特基势垒的原因。按照这一模型,Co在肖特基势垒的的形成中起到一个关键作用。 相似文献
4.
Nb2O5掺杂对ZnO压敏电阻器电性能的影响 总被引:4,自引:1,他引:4
本文研究了Nb_2O_5掺杂以及Nb_2O_5与ZnO煅烧对ZnO压敏电阻器电性能的影响。实验表明,Nb_2O_5的掺入使压敏电场减少,当Nb_2O_5含量为0.1%mol时,其压敏电场最小.非线性系数最大。煅烧温度越高,压敏电场越高,非线性系数越大。 相似文献
5.
掺杂对低压ZnO压敏陶瓷材料显微结构及性能的影响 总被引:1,自引:0,他引:1
本文探讨了多种金属氧化物对ZnO-Bi_2O_3-TiO_2系材料的改性作用和对其微结构的影响,为得到预定性能的材料提供了掺杂方面的实验依据。 相似文献
6.
7.
液相掺杂对ZnO压敏电阻器性能的影响 总被引:4,自引:0,他引:4
采用Co、Mn、Al等元素液相掺杂,制得了高能和高压ZnO压敏电阻器,通过与氧化物掺杂制得的电阻进行比较,结果表明,掺同样含量Co时,液相掺杂的高能压敏电阻器大电流区的I-V曲线上翘,将Co的含量减半,得到了性能全面优于氧化物掺杂的高能压敏电阻器。在高压ZnO压敏电阻器配方中,采用Al液相掺杂,能有效地改善大电流区的非线性。 相似文献
8.
9.
氧化锌压敏电阻用掺杂粉体的水热合成 总被引:1,自引:2,他引:1
以氧化锌为原料,添加其它掺杂金属氧化物,在水热高温、高压下一次性合成ZnO压敏电阻用掺杂粉体,利用SEM和XRD研究了前驱体配比、水热温度、反应介质对掺杂氧化锌生长的影响,用此掺杂氧化锌粉体制备的ZnO压敏电阻的非线性系数达到43.48。 相似文献
10.
纳米ZnO掺杂压敏电阻电位梯度与显微组织研究 总被引:1,自引:0,他引:1
在制备ZnO压敏电阻的原料中加入纳米级ZnO粉料,研究了纳米级粉料对ZnO压敏电阻的压敏电位梯度的影响,并对其微观组织进行了分析研究,从理论上探讨了纳米ZnO影响ZnO压敏电阻压敏电位梯度与组织的机理.研究结果表明,压敏电阻中加入纳米ZnO后,其压敏电位梯度显著提高,纳米ZnO(质量分数)在0-30%的成分范围内,随着纳米ZnO含量的增加,ZnO压敏电阻的压敏电位梯度明显提高.其原因是纳米ZnO加入到ZnO压敏电阻中,使晶粒尺寸减小所致. 相似文献
11.
12.
13.
14.
Li~+对ZnO压敏陶瓷电性能和能带结构的影响 总被引:1,自引:0,他引:1
采用氧化物固相合成法,制备了掺Li2CO3的ZnO压敏陶瓷。研究了掺Li2CO3量对ZnO压敏陶瓷电性能和能带结构的影响。结果表明:当x(Li2CO3)从0增加到0.50%时,压敏电位梯度从529V/mm增大到2170V/mm。XRD测试发现,掺Li2CO3并未出现新相结构。晶界势垒高度揭示,ZnO晶粒尺寸的迅速减小是压敏电位梯度急剧增高的主要原因。Li+置换Zn2+,将会在禁带中价带的顶部形成附加的受主能级,使能带发生畸变。 相似文献
15.
16.
17.
The ac response of ZnO-based varistors was measured as a function of temperature and applied electric field. Conductivity-frequency
measurements indicated that the grain boundaries of the ZnO varistors were amorphous. The device resistance was found to decrease
as the temperature/applied field increased. This was attributed to deterioration of the insulating property of the grain boundaries
due to generation of conduction carriers in the ZnO grains. As a large amount of these charge carriers passed through the
grain boundaries, the ZnO varistors remarkably revealed a non-Debye characteristic that can be modeled by a capacitance to
simulate the behavior of the grain boundaries. 相似文献
18.
19.
M. S. Ramanachalam A. Rohatgi W. B. Carter J. P. Schaffer T. K. Gupta 《Journal of Electronic Materials》1995,24(4):413-419
Photoluminescence (PL) measurements were carried out on commercial ZnO varistor samples that were electrically stressed and/or
annealed at different temperatures. Changes in the intensity of green and yellow luminescence centers were studied as a function
of annealing treatment. It was found that the ZnO luminescence (green and yellow) decrease with increase in annealing temperature,
reach a minimum at 700°C, and increase again beyond 800°C. Furthermore, these green and yellow luminescence bands observed
in the PL spectra are quenched in the ZnO varistor samples, compared to pure ZnO. In an electrically stressed ZnO varistor
sample, the luminescence intensity was found to be higher compared to the as-sintered varistor sample. Annealing of the stressed
varistor sample resulted in a decrease of the luminescence intensity. These PL observations are consistent with previous deep
level transient spectroscopy and doppler positron annihilation spectroscopy results. All of the experimental results are consistent
with the ion migration model of degradation and can be explained using a grain boundary defect model. 相似文献