全方位离子注入与沉积技术及其工业机的研制

全方位离子注入与沉积（Plasma immersion ion implantation and deposition,PIIID）技术发展到现在,已经逐步走向工业化应用。本文介绍了全方位离子注入与沉积技术的原理,探讨了全方位离子注入与沉积工业机应该具备的功能,介绍了研制成功的全方位离子注入与沉积设备的结构和实施效果,其脉冲阴极弧等离子体源沉积速率达到2．9A／s,IGBT固体开关调制器输出电压达到10kv,能够一次处理多个工业零件。     

全方位离子注入及增强沉积工业机和应用

报道了等离子体源离子注入 (PSII)或等离子体浸没离子注入 (PIII)及增强沉积工业机的实验结果及应用。该机真空室直径 90 0mm ,高 10 5 0mm ,立式放置 ,抽气系统由分子泵及机械泵构成并且实现了PLC控制 ,本底真空小于 4× 10 - 4Pa。等离子体由热阴极放电或三个高效磁过滤式金属等离子体源产生 ,因此可实现全方位离子注入或增强沉积成膜。该机的负高压脉冲最高幅值为 80kV ,最大脉冲电流为 6 0A ,重复频率为 5 0— 5 0 0Hz ,脉冲上升沿小于 2 μs,并且可根据需要产生脉冲串。其等离子体密度约为 10 8— 10 10 ·cm- 3,膜沉积速率为 0 .1— 0 .5nm/s。     

GCr15表面钽沉积及碳离子注入的摩擦性能的研究

GCr15钢广泛用于各类轴承制造.为提高其摩擦性能,用磁控溅射法在GCr15轴承钢试样表面沉积厚约100 nm的钽膜,再进行不同注量的50 keV碳离子注入.用Ф6的GCr15钢球做对磨试验,测试它们的摩擦性能,用SEM观察磨痕形貌.结果表明,处理后GCr15钢改性层的Ta2C含量随注量增加,摩擦性能得以提高.载荷1 N、滑动速度50 mm/s条件下,注入3×1017ions/cm2的试样耐磨性是原始试样的1.65倍;表面沉积钽膜后,摩擦系数由未处理前的0.8～1下降至0.5左右,钽膜注碳后摩擦系数更降至0.2～0.3,注入层主要以磨粒磨损为主.     

O、C离子注入n型GaN的黄光发射研究

采用光致发光(Photoluminescencc,PL)谱的测量,研究了1012～1017cm-2的O和C两种离子注入和退火对非有意掺杂的n型GaN黄光发射(Yellow luminescence,YL)的影响,注入后的样品在流动N2的保护下进行退火,退火温度950℃,退火时间30 min.对比相同剂量下N离子注入GaN黄光发射,结果表明O、C两种离子的注入在GaN中分别引入了与黄光发射相关的不同的深能级中心,当C离子注入剂量高达1017cm-2时,能引起黄光发射的C相关的深能级中心显著增多.     

PIXE、SEM与切片技术相结合研究低能离子注入种子的浓度-深度分布

用质子激发X荧光分析和扫描电子显微镜与切片技术相结合对能量为 2 0 0keV的钒离子注入花生后的浓度 -深度分布进行了测定 ,注入剂量为 9× 10 16/cm2 。结果显示 ,钒离子注入花生后的浓度 -深度分布与离子注入金属、半导体中的分布有明显的差异 :离子的射程歧离很大 ,少数离子的射程延伸到很深的区域。这种分布特征可能与植物种子具有疏松的结构有关。     

P-阱、沟道区离子注入分布特性的测试分析与计算机模拟

CMOS集成电路在LSI、VLSI中占有显著地位,它是当今乃至今后一段时期集成电路发展的主流。研究CMOSIC沟道、P~-阱注入杂质的分布和再分布规律,对于指导工艺实践和提高电路性能具有现实意义。     

N、O、Ga、Mg和Si离子注入n型GaN样品的光致发光谱中蓝光发射带的研究

采用光致发光手段研究了几种不同注入离子N、O、Mg、Si和Ga对n型GaN蓝光发射带的影响.其中离子的注入剂量分别为1013、1014、1015和1016cm-2,注入温度为室温.注入后的样品在900℃流动氮气环境下进行10 min的热退火.通过对实验测得的光致发光谱的分析,给出了不同注入离子对n型GaN蓝光发射带的影响随注入剂量的变化关系以及该影响的相对强弱,进而确定蓝光发射起源于注入离子引入的间位缺陷.     

化学沉积103Pd工艺的研究

以0.5 mm×3.0 mm碳棒为载体,氯化钯为前体,¹⁰³Pd为放射性示踪剂,水合肼为还原剂,研究了化学沉积¹⁰³Pd工艺。结果表明,化学沉积¹⁰³Pd的优化条件为：2 g/L PdCl₂、65 g/L Na₂EDTA、700 mL/L 25%NH₃•H₂O、100 mL/L 5%H₄N₂•H₂O,pH=10,时间90 min,温度50 ℃。化学沉积¹⁰³Pd溶液稳定性好,反应易进行;有95%的¹⁰³Pd沉积到载体棒上,碳棒对¹⁰³Pd的吸收仅约为12%,¹⁰³Pd利用率高;沉积层呈灰白色,表面平整;化学沉积¹⁰³Pd批内均匀性好,重复性好。化学沉积¹⁰³Pd技术可用于制备¹⁰³Pd粒子和新型¹⁰³Pd-¹²⁵I复合粒子。     

等离子与激光复合热源喷涂WC-CoCr涂层组织性能研究

用等离子束与激光束复合热源喷涂工艺(Laser Hybrid Plasma Spraying,LHPS)在38CrMoAl基体上制备WC-10Co4Cr涂层,对涂层的显微硬度、结合强度、耐滑动摩擦磨损性能进行测试,用光学显微镜、XRD、SEM等方法对涂层的显微组织、相组成、磨损后形貌等测试分析,同时研究激光功率的变化对涂层组织性能影响。结果表明,复合热源喷涂WC-10Co4Cr涂层微观组织与性能随激光功率大小而变化,当激光功率在2100-2500 W时,涂层与基体浸润性好,组织相对致密,结合强度高,摩擦系数低且抗摩擦磨损性能好,其磨损机制为塑性切削与脆性剥落,以脆性剥落为主。     

毛细管内气溶胶沉积特性的实验研究与分析

以核电厂事故期间安全壳内放射性气溶胶通过缝隙向环境释放为研究背景,建立毛细管通道内气溶胶沉积特性研究实验台架并开展实验研究。毛细管内的气体流动由压力驱动,气溶胶为二氧化钛。基于目前的实验结果,毛细管内气溶胶无量纲沉积速度随无量纲松弛时间的变化分为上升区和平台区,两个区域约在无量纲松弛时间为70～100之间分界。与常规管道的气溶胶沉积特性实验结果相比,本文获得的沉积速度偏小。本文在基于欧拉体系的颗粒壁面沉积3层模型中增加了Saffman力,利用改进后的模型评估了颗粒与气体速度差对沉积速度的影响。结果显示,当速度差大于某值后,Saffman力将显著减弱颗粒壁面沉积。     

等离子体浸没离子注入绝缘材料的研究

等离子体浸没离子注入是一种新形式的离子注入技术,是利用负偏压工件周围形成的等离子体鞘层进行离子加速、进而获得离子注入.等离子体注入的前提条件是工件导电,因此对于绝缘材料的等离子体注入可能存在问题.本文从理论和实际处理的角度论证了绝缘材料等离子体注入的可能性、可操作性,并给出了一些实际例证.     

Ti-PS nanocomposites by plasma immersion ion implantation and deposition

We synthesize Ti-PS nanocomposites by plasma immersion ion implantation and deposition (PIII&D) technique. Ti nanoparticles at size of 5-15 nm are found in PS matrix. We propose the formation of Ti nanoparticles as a result of the combined effect of ion implantation and ion condensation in PIII&D process. X-ray photoelectron spectroscopy measurements reveal that Ti atoms have three different chemical states, metal, oxide and carbide. While surface Ti atoms are oxidized, embedded Ti atoms keep their metallic states by surrounding PS matrix. We characterize optical absorbance of Ti-PS nanocomposites by UV-VIS measurements. An adsorption peak due to the excitation of localized surface plasmon is found at wavelength 337.5 nm and the fractal nature of Ti-PS nanocomposites broaden absorption wavelength from UV to infrared. In addition, we use a protein assay to measure protein immobilization. It is found that the amount of protein immobilized on Ti-PS nanocomposites is almost twice than that on pristine PS. The enhancement mechanisms are attributed to the increased surface roughness as well as covalent linkages between protein molecules and functional groups on the surface of Ti-PS nanocomposites.     

Plasma immersion ion implantation for metallurgical and semiconductor research and development

Plasma Source Ion Implantation, also termed Plasma Immersion Ion Implantation, is a rapidly developing material modification technique for treating the near-surface regions of various kinds of materials. It makes use of high-energy ions which are accelerated by a high voltage pulse from a plasma which wraps the workpiece to be treated. The ions are implanted into the material causing effects similar to those of conventional beam-line ion implantation. Research and development of plasma immersion ion implantation has focused in two main fields, treatment of metals for improved wear and corrosion performance, and modification of semiconductors. The paper discusses examples from both fields, with nitrogen PIII of steels and aluminum, and modification of thin metal films. From the semiconductor field, trenchwall doping, ultra-shallow doping with boron, and oxygen ion implantation for SIMOX formation is treated.     

PⅢD技术制备Ti/DLC纳米多层薄膜

采用等离子体浸没离子注入与沉积(PⅢ&D)技术在2Cr13钢表面制备了Ti/DLC纳米多层薄膜.分析了膜层的微观结构和机械特性.实验结果表明:纳米多层膜具有完整、清晰的调制层结构,薄膜的显微硬度均得到明显的提高.硬度较低的膜层具有较好的膜基结合强度和优良的摩擦性能,从综合性能看:纳米多层薄膜保持了类金刚石(DLC)薄膜低摩擦系数的特性,具有良好的承载能力以及膜一基结合特性.     

PIIID技术制备Ti/DLC纳米多层薄膜

采用等离子体浸没离子注入与沉积（PIII＆D）技术在2Cr13钢表面制备了Ti／DLC纳米多层薄膜,分析了膜层的微观结构和机械特性。实验结果表明：纳米多层膜具有完整、清晰的调制层结构,薄膜的显微硬度均得到明显的提高,硬度较低的膜层具有较好的膜基结合强度和优良的摩擦性能,从综合性能看：纳米多层薄膜保持了类金刚石（DLC）薄膜低摩擦系数的特性,具有良好的承载能力以及膜-基结合特性。     

Argon plasma immersion ion implantation of polystyrene films

Plasma immersion ion implantation (PIII), using bias voltages of 5, 10, 15 and 20 kV in an argon plasma and fluences in the range of 2 × 10¹⁴-2 × 10¹⁶ ions/cm², was applied to 100 nm polystyrene films coated on silicon wafer substrates. The etching kinetics and structural changes induced in the polystyrene films were investigated with ellipsometry, Raman and FTIR spectroscopies, optical and scanning electron microscopies, atomic force microscopy and contact angle measurements. Effects such as carbonisation, oxidation and cross-linking were observed and their dependence on the applied bias voltage is reported. Variations in the etching rate during the PIII process and its relationship to carbonisation of the modified surface layer are explored.     

等离子体浸没离子注入圆筒内表面的时空尺度

等离子体浸没离子注入与工件外表面的注入不同 ,存在空间和时间上的尺度。研究结果表明 ,由于内腔 ,如内筒的有限尺寸 ,使注入电压的利用率降低 ,同时使内部等离子体快速耗尽 ,对于特定的内筒 ,利用提高注入电压从而提高注入能量只能在一定的电压范围内实现。在典型的外表面注入工艺条件下 ,内表面离子的耗尽速度是惊人的。如在对于直径 2 0cm的圆筒在 30kV、2× 10 15ions/cm3的条件下 ,等离子体耗尽时间仅为 0 .5 5 μs ,这个时间甚至小于多数脉冲电源的上升沿时间。结果表明 ,内部等离子体源的硬件结构可能是一种有效的解决方法。     

Etching and structure changes in PMMA coating under argon plasma immersion ion implantation

A thin (120 nm) polymethylmethacrylate coating was treated by plasma immersion ion implantation with Ar using pulsed bias at 20 kV. Ellipsometry and FTIR spectroscopy and gel-fraction formation were used to detect the structure transformations as a function of ion fluence. The kinetics of etching, variations in refractive index and extinction coefficient in 400-1000 nm of wavelength, concentration changes in carbonyl, ether, methyl and methylene groups all as a function of ion fluence were analyzed. A critical ion fluence of 10¹⁵ ions/cm² was observed to be a border between competing depolymerization and carbonization processes. Chemical reactions responsible for reorganization of the PMMA chemical structure under ion beam treatment are proposed.