授权的频谱共享技术

随着无线频谱资源需求的不断增加,如何更有效地利用稀缺的频谱资源成为了各国关注的重点问题。授权的频谱共享技术作为一种新兴的频谱资源管理方式,允许获得共享授权的用户在不影响原频谱所有者服务的情况下共享使用该频段。目前,美国和欧洲正在大力推动授权的频谱共享技术的应用,这种方式可以为我国频谱管理工作带来新的启发。     

认知无线电研究与最新进展

随着信息技术的发展,无线通信得到广泛的应用,但同时人们面对频谱资源越来越匮乏的挑战。对授权用户而言,其频谱利用率极低,而对非授权用户而言,却找不到可以使用的频谱,这是导致频谱匮乏的重要原因之一。认知无线电作为无线通信的热点研究领域,它为提高频谱利用效率、解决频谱匮乏问题提供了技术支持,使研究人员看到了希望。文中分析认知无线电研究现状,讨论认知无线电研究的主要技术难题和最新进展,并提出新的发展方向。     

5G授权频谱分配及非授权频谱利用技术的研究

随着移动互联网和移动终端的不断发展,移动数据流量也大幅度增长。因此,在第五代蜂窝移动通信系统中,如何对现有的频谱资源进行有效的分配和利用成为了讨论和研究的热点。一方面,5G系统的频段向高频方向拓展,增大可用的频谱资源。另一方面,5G系统继续对接入技术进行演进,以实现对非授权频谱资源的充分利用。本文的内容主要分为三部分,分别对目前主流阵营的授权频谱分配计划、正处于讨论中的非授权频谱接入技术和目前的标准化进程进行了介绍。     

一种基于认知无线电的动态频谱接入MAC方案

在传统的无线通信系统中,频谱的分配是固定的。但是由于通信过程的突发性,这些频谱的使用率很低。另一方面,随着无线通信和多媒体的高速发展和广泛应用,无线频谱资源日趋紧张。如何提高频谱利用率已经成为迫切需要解决的问题。一种可行的思路是把这些授权频谱向未授权用户开放,未授权用户采用动态频谱接入技术,在不对授权用户造成干扰的前提下使用频谱。本文以认知无线电技术(Cognitive Radio,CR)为基础,提出了一种基于CR的动态频谱接入MAC方案(CR-Ad Hoc-MAC)。该方案允许未授权用户自适应地选取可用带宽,实现了动态频谱接入,有效地提高了频谱利用率。     

不同优先级非授权用户的频谱接入方案探讨

认知无线网络是解决有限的频谱资源与日益剧增的无线接入需求之间矛盾的有效方案之一,也是提高未来无线通信系统频谱效率的有力手段。本文分析了无优先级非授权用户的认知无线网络中各种频谱接入方案的特点,在此基础上提出了不同优先级非授权用户共存环境下的两种频谱接入方案。     

认知无线电中基于干扰温度的频谱探测技术

认知无线电的提出,能够在一定程度上提高频谱利用率,解决目前通信频谱资源紧缺的问题.频谱探测是认知无线电中的关键技术之一,通过频谱探测技术来检测授权用户的频谱空洞,以使得非授权用户能够有效利用.文章介绍了常用的基于干扰温度的探测模型以及频谱估计算法,进行了分析与总结,并且提出了目前频谱探测技术的不足之处.     

频谱效率、认知技术:频管改革的动力与挑战(上)

实际测量发现,目前频谱使用中存在着效率低下的问题。为了解决频谱物理资源匮乏与低利用效率之间的矛盾,迫切需要一种动态接入频谱的方式,认知技术由此应运而生。这种免授权频谱使用方式与现有频管部门的固定频率划分机制完全不同,因此,认知技术的出现对当前频管部门提出了严峻的挑战。本文首先介绍了国内外几次著名的实测活动,在此基础上,对动态频谱接入(Dynamic Spectrum Access,DSA)技术以及认知技术的发展过程进行介绍,最后重点从频谱管理层面和工程技术层面上分析了认知技术为频谱管理带来的机遇与挑战。     

美国频谱高速公路计划浅析——转变频谱结构,加强频谱管理,实现频谱共享

随着无线技术发展,无线频谱的接入需求激增与现有无线系统的频谱利用率低下形成矛盾。为了解决该矛盾,提升经济竞争力,美国政府提出了1000MHz的宽带频谱共享计划(即频谱高速公路计划)。针对该计划,本文介绍了其新的频谱结构、频谱使用的度量方法、等级接入方式和接入系统以及基于接收机管理等方面内容。最后给出了总结,并阐述了该计划对我国无线电频谱管理的启示。     

国际频谱管理发展状况初探

0 前言 传统的无线电频谱管理采用固定频谱分配策略,频谱资源被分配给固定的授权用户。这种方式能够使用户明确知晓设备工作频段与通联允许参数,但所分配的频段可能并未得到充分利用。随着近年来对频谱资源需求的不断增加,一些特定频段面临着资源匮乏的问题,     

浅析美海军频谱认证

频谱认证能从源头上减小武器装备和各系统间的相互干扰,有利于后期频谱资源的合理分配和管理。对美海军和海军陆战队频谱管理年会进行了研究。分析了美海军频谱认证的原因、过程和阶段等方面,最终提出了对我国频谱管理的启示。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.