Distribution coefficients in (YSmLuCa)3(FeGe)5O12 film growth

The composition of bubble garnet films has been analyzed by Inductively Coupled Plasma Emission Spectroscopy (ICP) to determine the distribution coefficients for different growth conditions. Under typical growth conditions, the distribution coefficients, k, of each element are as follows: k^Y = 2.15, k^Sm = 1.56, k^Lu = 1.32, k^Ca = 0.45, k^Fe = 0.98, k^Ge = 1.10. As the supercooling temperature (growth rate) increases, k^Ca, which is the smallest and deviates most from 1.0, changes in the direction approaching 1.0. For charge compensation, k^Ge also increases, consequently, k^Fe must decrease. Also k^Y, which is the largest, $\text{k}{}^{\mathrm{Sm}}\text{k}{}^{\mathrm{Y}}$ and $\text{k}{}^{\mathrm{Lu}}\text{k}{}^{\mathrm{Y}}$ change in the direction approaching 1.0. On the other hand, as the melt parameter R₁ (≡ $\text{Fe}{}_2\text{O}{}_3\text{Σ}\text{Ln}{}_2\text{O}{}_3$) increases, k^Fe decreases, and k^Y, k^Sm and k^Lu increase, whereas $\text{k}{}^{\mathrm{Sm}}\text{k}{}^{\mathrm{Y}}$ and $\text{k}{}^{\mathrm{Lu}}\text{k}{}^{\mathrm{Y}}$ remain constant at 0.73 and 0.61, respectively.     

Growth and mobility measurements of (YLuCa)3(FeTiGe)5O12 films for magnetic bubble application

The liquid phase epitaxial growth conditions and properties of garnet films of nominal composition Y_1.8 Lu_0.2Ca_1.0Fe_4.0Ti_0.3Ge_0.7O₁₂ are described. Ca+Ge reduces the lattice parameter when substituted into yttrium-lutetium iron garnet. On the other hand, Ca+Ti increases it. Ca+Ti+Ge additions to the garnet make it easy to match the lattice parameter with the GGG substrate and to obtain stable bubbles. This material has low ferrimagnetic resonance damping loss and high mobility bubbles. The bubble mobility, estimated from the damping parameter and other static bubble properties, is 5626 cm/sec-Oe. This value approximately agrees with that measured by translational field gradient techniques. The bubble translation bias margin at 310 kHz and temperature coefficient of the static bubble properties are reported briefly.     

Growth and magnetooptical properties of thin garnets films in the system (Pr Gd Yb)3-xBix(Fe Al)5O12

Growth from liquid phase epitaxy and magnetooptical properties of single crystal garnet films in (Pr Gd Yb)_3-xBi_x(Fe Al)₅O₁₂ system are reported. The dependences of the distribution coefficient and the Bi content of the films on the growth temperature are analyzed. The influence of the growth condition on the magnetic and magneto-optical properties of the materials are described and discussed in order to obtain in planemagnetization films having large Faraday rotation (> 1 800 degr./cm) and figure of merit (50 – 80 degr./dB) suitable for integrated magnetooptics application.     

Zur kristallstruktur von (NH4)3Ti(O2)F5

The disordered ligand positions in (NH₄)₃Ti(O₂)F₅ (cubic, space group Fm3m - O⁵_h'$\text{a}\text{= 9.23}{}_2\text{A}\text{?}$) has been studied by X-ray single crystal investigation. A 3-dimensional fourier synthesis indicates a distribution of the disordered O-Atoms on the 96j positions (Oyz) similar to (NH₄)₃ZrF₇ where a pentagonal bipyramide has been proposed for geometrie of the ZrF₇-group. Due to the short O-O distance the structure of (NH₄)₃Ti(O₂)F₅ is better described as elpasolite where one of the six octahedral ligand positions are statistically replaced by an ‘edge on’ O^2?₂-group oriented there in two possible directions.     

Computational study of interaction of bromine ions with clusters (O2)6(H2O)50 and (O3)6(H2O)50

Interaction of bromine ions with water clusters that have absorbed the molecules of oxygen and ozone is studied using a molecular-dynamics simulation of flexible molecules. The cases of location of Br⁻ ions on the surface and in the bulk of the cluster are described. Water clusters with ozone molecules remain stable during their interaction with the Br⁻ ions, while oxygen molecules are found to evaporate from the cluster when Br⁻ ions appear in its bulk. In the presence of Br⁻ ions, the infrared spectra of systems with O₃ molecules are observed to be intensified. The intensities of the IR spectra with O₂ molecules may both increase and decrease depending on the arrangement of the Br⁻ ions. The Raman spectra are sensitive to the appearance of Br⁻ ions only for systems that contain oxygen molecules. As a result of interaction with the Br⁻ ions, the power of IR radiation emitted by the clusters can not only increase, but also decrease.     

Crystal Structure of (H3O)6[(UO2)5(SeO4)8(H2O)5](H2O)5

Crystals of (H₃O)₆[(UO₂)₅(SeO₄)₈(H₂O)₅](H₂O)₅ were prepared from aqueous solutions by evaporation. The crystal structure [monoclinic system, space group P2₁/m, a = 13.835(2), b = 13.4374(16), c = 14.310(3) Å, β = 108.004(14)°, V = 2530.1(7) Å ³] was solved by the direct method and refined to R ₁ = 0.090 for 4409 reflections with |F _hkl ≥ 4σ|F _hkl |. The structure is based on [(UO₂)₅(SeO₄)₈(H₂O)₅]⁶⁻ layers arranged parallel to the (101) plane; these layers have a unique topological structure. The U(1)O₆(H₂O) and U(3)O₆(H₂O) linked through selenate groups form chains running along [ [`1]\bar 1 01] direction. The chains are combined in layers by U(2)O₆(H₂O) bipyramids. The layers are linked with each other by hydrogen bonds through the H₂O and H₃O⁺ groups located between the layers.     

Control of properties during the growth of a large number of (Y,Sm)3(Ga,Fe)5O12 films from the same melt

For the growth of a large number of (Y, Sm)₃(Ga, Fe)₅O₁₂ films from the same melt, we describe the drift and methods to control the drift in film properties, so that the films are suitable for making magnetic bubble memory devices. The melt was based on PbO-B₂O₃ flux. The film thickness h and the characteristic length l were kept at around 5.4 μm and 0.54 μm respectively. The desired h was achieved by adjusting the growth time. The desired values for l were achieved by adjusting the growth temperature and by periodically adding small amounts of Ga₂O₃. The lattice constant was kept within the specified limits by periodic additions of Y₂O₃. Using these techniques we were able to grow more than a hundred films, out of which ～ 85% were acceptable for device fabrication. Based on the deduced values for the composition of our films, we have calculated the melt depletion resulting from the growth of a single film. We find that the experimentally determined additions of Ga₂O₃ and Y₂O₃ that gave us good control over film properties are almost equal to the calculated depletions for these two oxides.     

Growth and characterization of Ba(Cd1/3Ta2/3)O3 thin films

We have synthesized stoichiometric Ba(Cd_1/3Ta_2/3)O₃ [BCT] (100) dielectric thin films on MgO (100) substrates using Pulsed Laser Deposition. Over 99% of the BCT film was found to be epitaxial [BCT (100) || MgO (100) and BCT (010) || MgO (010)] when grown with an elevated substrate temperature of 635 °C, an enhanced oxygen pressure of 53 Pa and a Cd-enriched BCT target with a 1 mol BCT: 1.5 mol CdO composition. A dielectric constant of 32 was inferred from low-frequency capacitance measurements of a planar interdigital metal pattern. Analysis of ultra violet optical absorption results indicates that BCT has a bandgap of 4.9 eV; while the interference pattern in the visible range is consistent with a refractive index of 2.1. Temperature-dependent electrical measurements indicate that the BCT films have a room temperature conductivity of 3 × 10^− 12 Ω^− 1 cm^− 1 with a thermal activation energy of 0.7 eV. A mean particle size of ~ 100 nm and a root mean square surface roughness of 5 to 6 nm were measured using Atomic Force Microscopy.     

Waveguiding properties of pulsed-laser deposition Ca4GdO(BO3)3 thin films

Waveguiding properties of stoichiometric Ca₄GdO(BO₃)₃ (GdCOB) thin films deposited on quartz substrates by the pulsed-laser deposition (PLD) technique are reported. The optical properties and the anisotropy of the obtained thin films are investigated using the prism-coupling technique. Refractive indices (n_x=1.666, n_y=1.673 and n_z=1.680 at 632.8 nm) were, respectively, determined from the transverse electric (TE) and the transverse magnetic (TM) mode excitations. These values are found to be 3% lower than those of the bulk material, which is likely due to the structural and morphological features of the deposited GdCOB films.     

The origin of the uniaxial anisotropy in thin films of (YLaPb)3 (FeGa)5O12 and its variation along the growth direction

The uniaxial anisotropy of La, Ga: YIG films grown by liquid phase epitaxy has been measured using spin-wave resonance techniques. The results show that in films produced at growth temperatures above 840°C on [111] Gd₃Ga₅O₁₂ substrates the uniaxial anisotropy is stress induced. At lower growth temperatures the Pb incorporation gives rise to a positive growth-induced anisotropy of 4×10⁴ erg/cm³ per Pb atom per formula unit. Around the growth temperature of 840°C, where the Pb and La effects cancel, homogeneous films can be grown. Variations of anisotropy within the filmsthickness will be shown to be due to variations of local growth rates which in turn cause composition changes.     

Dielectric properties of Pb3 (PO4)2 | Pb3 (AsO4)2

The dielectric constants of Pb₃ (PO₄)₂ | Pb₃ (AsO₄)₂ at room temperature are intrinsic and fulfill the Lyddane - Teller - Sachs relation. At higher temperatures the specific conductivity increases with an activation energy of 0.56 eV leading to Maxwell - Wagner polarization effects thereby increasing the effective dielectric constant. Corresponding peaks in ∈' (T) are extrinsic and not attributed to structural phase transformations.     

Etude du systeme KPO3-LaP3O9. Donnees cristal lographiques sur K2La(PO3)5 et (NH4)2La(PO3)5

The system KPO₃-LaP₃O₉ has been studied for the first time by differential thermal analysis and X ray diffraction. The system shows two compounds KLa(PO₃)₄ and K₂La(PO₃)₅ which melt in a peritectic decomposition at 880°C and 770°C respectively. An eutectic point appears at 705°C; The eutectic point corresponds to a concentration of 10% molar LaP₃O₉.Infra Red absorption spectra are typical of chain phosphates.The new compound K₂La(PO₃₅ is isotypic whith (NH₄)₂La(PO₃)₅ which has been synthetized for the first time. They belong to the triclinic system whith space group P1 and Z = 2. The parameters of the unit cell are: $\text{a = 7.309(4)}\text{A}\text{?}$$\text{b = 13.35(2)}\text{A}\text{?}$$\text{c = 7.155(7)}\text{A}\text{?}$α = 90°3(1) β = 109°17(7) γ = 89°90(4) for K₂La(PO₃)₅ and: $\text{a = 7.174(8)}\text{A}\text{?}$$\text{b = 13.38(2)}\text{A}\text{?}$$\text{c = 7.35(2)}\text{A}\text{?}$α = 90°6(2) β = 107°4(1) γ = 89°82(7) for (NH₄)₂La(PO₃)₅.     

Spectroscopic properties of Eu-doped KLa(PO3)4 and LiLa(PO3)4 powders

KLa(PO₃)₄ (KLP) and LiLa(PO₃)₄ (LLP) doped with different concentrations of Eu³⁺ are grown by solid state reaction. The obtained powders are identified by X-ray diffraction, Raman and FT-IR spectroscopies. These polyphosphates KLa(PO₃)₄ and LiLa(PO₃)₄ crystallize in the monoclinic system but with different space groups respectively P2₁ and C2/c. The evolution of crystal lattice parameters as function of Eu³⁺ concentration in these host lattices was studied. Spectroscopic properties of the Eu³⁺-doped KLa(PO₃)₄ and LiLa(PO₃)₄ at room temperature (RT) are presented. The excitation spectra of the Eu³⁺ ion in condensed polyphosphates along the UV-Visible domain are registered. They show that the position of the charge transfer band (CTB) depends on the host lattices. The effect of structural characteristics of condensed polyphosphates on their optical and colorimetric properties was investigated for the first time. Colorimetric parameters of the Eu³⁺ ions red emission in KLP and LLP are determined and compared with other host matrices. Evolution of colorimetric properties as function of Eu³⁺concentration was discussed.     

Influence of oxygen partial pressure on the structural and dielectric properties of Ba(Zr0.3Ti0.7)O3 thin films grown on (LaAlO3)0.3(Sr2AlTaO6)0.35 (001) using pulsed laser deposition

Epitaxial Ba(Zr_0.3Ti_0.7)O₃ thin films were grown on (LaAlO₃)_0.3(Sr₂AlTaO₆)_0.35 (001) single-crystal substrates by pulsed laser deposition at 700 °C in different oxygen partial pressures ranging from 6.7 Pa to 40.0 Pa. A strong correlation is observed between the structure and dielectric properties for the Ba(Zr_0.3Ti_0.7)O₃ thin films. The tetragonal distortion (ratio of in-plane and out-of-plane lattice parameter, a/c) of the films depends on the oxygen partial pressures. a/c varies from 0.989 at 6.7 Pa to 1.010 at 40.0 Pa, indicating the in-plain strain changes from compressive to tensile. The in-plain strain (either compressive or tensile) shifts the Curie temperature of the Ba(Zr_0.3Ti_0.7)O₃ thin films dramatically. Surface morphology and dielectric properties of Ba(Zr_0.3Ti_0.7)O₃ thin films have a strong dependence of the oxygen partial pressure. The film grown 26.7 Pa, which corresponds to a moderate in-plain tensile strain and a Curie temperature of ~ 30 °C, shows the largest relative permittivity, tunability and the best figure of merit in a broad frequency range (1 kHz-500 MHz), which may be a promising candidate for room-temperature microwave device applications.     

Preparation and properties of the Pb3(VO4)2Pb3(PO4)2 system

Single crystals of the pseudobinary system Pb₃(V_1?xP_xO₄)₂ were grown via the Czochralski technique and were studied over wide ranges of x, particularly with regard to the influence of substitution on the $\text{3}\text{?}\text{mF}\text{2}\text{m}$ transition as a function of temperature.     

Magnetic inhomogeneities in (YSmCa)3(GeFe)5O12 and their elimination by improved growth procedures

We have found that inhomogeneities in the growth direction are a very common occurrence in LPE films of (YSmCa)₃(GeFe)₅O₁₂. These inhomogeneities, which occur over a wide range of solution compositions and growth conditions, are not detected by the usual measurements of bubble parameters. However, they can be observed in the presence of an in-plane field using a technique which we describe. Experiments using this technique indicate that there is a thin (≤ 1 μm) layer at the film/substrate interface which has magnetic properties significantly different from the rest of the film. Special growth procedures which will avoid the formation of this “interface layer” are described in detail. Comparisons between films with and without this layer show, surprisingly, that there is no direct correlation between the coercivity and the presence of this layer. However, a correlation between coercivity and samarium concentration is observed when all other growth parameters are kept as constant as possible.     

Effects of porosity on ferroelectric properties of Pb(Zr0.2Ti0.8)O3 films

The sol-gel deposition method has been successfully applied to obtain Pb(Zr_0.2Ti_0.8)O₃ thin films on platinized silicon wafers. Addition of different amounts (7-15 wt.%) of organic macromolecular polyvinylpyrrolidone in the precursor solution prior to spin coating proves to be an excellent method for obtaining porous films. The crystal structure of as deposited films was analyzed by X-ray diffraction. The porous films show perovskite phase after annealing at 650 °C. The surface morphology has been studied by Atomic Force Microscopy and Scanning Electron Microscopy. The surface profile indicates a roughness of the film of 5 nm and no microcracks on the surface. The ferroelectric behavior was proved for each film, by hysteresis loops and by the “butterfly” shape of the capacitance-voltage characteristics. The remnant polarization and the coercive field decrease while the amount of added PVP increases.     

Growth, thermal and optical properties of Yb:GdYAl3(BO3)4 crystal

Single crystal of Yb:GdYAl₃(BO₃)₄(Yb:GdYAB) has been grown by the flux method. The structure of Yb:GdYAB crystal has been determined by X-ray diffraction analysis. The experiment show that the crystal has the same structure as that of YAl₃(BO₃)₄ crystal and its unit cell constants have been measured to be a = 9.30146 Å, c = 7.24164 Å, Vol = 542.59 Å³. The absorption and fluorescence spectrum of Yb:GdYAl₃(BO₃)₄ crystal have also been measured at room temperature. In the absorption spectra, there are two absorption bands at 938 nm and 974 nm, respectively, which is suitable for InGaAs diode laser pumping. In the fluorescence spectra, there are two fluorescence peaks at 992 and 1040 nm. The thermal properties of Yb:GdYAl₃(BO₃)₄ crystal have been studied for the first time. The thermal expansion coefficient along c-axis is almost 5.4 times larger than that along a-axis. The specific heat of the crystal has been measured to be 0.77 J/g °C at room temperature. The calculated thermal conductivity is 5.26 Wm⁻¹ K⁻¹ along a-direction.     

Influence of R1parameter {=Fe2O3/(Y2O3+ Sm2O3+ Lu2O3)} on magnetic bubble properties of (YSmLuCa)3(FeGe)5O12

The influence of R1{=Fe2O3/(Y2O3+Sm2O3+Lu2O3)} in the melt composition on film properties, and growth characteristics, has been investigated for (YSmLuCa)3(FeGe)5O12. The garnet phase is the primary phase when R1is kept between 10 and 60. The temperature coefficient for the bubble collapse filed changes from -0.29 to -0.19 %/°C, and the growth rate with 10°C supercooling changes from 0.60 to 0.15 μm/min, by increasing R1=10 to 60. Distribution coefficients, K^Y, K^Sm, K^Luand K^Geincrease, and K^Feand K^Cadecrease, with increasing R1.