The Role of Phase Changes in TiO<Subscript>2</Subscript>/Pt/TiO<Subscript>2</Subscript> Filaments

This work analyses the role of phase changes in TiO₂/Pt/TiO₂ layer stacks for micro-heater application regarding their stability and reliable operation. The polycrystalline Pt layer wrapped in a TiO₂ adhesion layer underwent a continuous recrystallisation in a self-heating operation causing a drift in the resistance (R) versus temperature (T) performance. Simultaneously, the TiO₂ adhesion layer also deteriorates at high temperature by phase changes from amorphous to anatase and rutile crystallite formation, which not only influences the Pt diffusion in different migration phenomena, but also reduces the cross section of the Pt heater wire. Thorough scanning electron microscopy, energy dispersive spectroscopy, cross-sectional transmission electron microscopy (XTEM) and electron beam diffraction analysis of the structures operated at increasing temperature revealed the elemental structural processes leading to the instabilities and the accelerated degradation, resulting in rapid breakdown of the heater wire. Owing to stability and reliability criteria, the conditions for safe operation of these layer structures could be determined.     

The Effect of Hydrogen on the Fracture Properties of 0.8(Na<Subscript>1/2</Subscript>Bi<Subscript>1/2</Subscript>)TiO<Subscript>3</Subscript>-0.2(K<Subscript>1/2</Subscript>Bi<Subscript>1/2</Subscript>)TiO<Subscript>3</Subscript> Ferroelectric Ceramics

The effect of hydrogen on the fracture properties of lead-free ferroelectric ceramics has been studied. For hydrogen precharged samples, the fracture toughness decreased linearly with both increasing hydrogen concentration and the logarithm of dwell time of indenting. Hydrogen-induced delayed propagation of unloaded indentation cracks can occur, and the threshold stress intensity factor of hydrogen-induced cracking induced by residual stress decreases linearly with increasing hydrogen concentration.     

Microwave Dielectric Properties of ZnO-2TiO<Subscript>2</Subscript>-Nb<Subscript>2</Subscript>O<Subscript>5</Subscript> Ceramics with BaCu (B<Subscript>2</Subscript>O<Subscript>5</Subscript>) Addition

The influence of BaCu(B₂O₅) (BCB) addition on the sintering temperature and microwave dielectric properties of ZnO-2TiO₂-Nb₂O₅ (ZTN) ceramic has been investigated using dilatometry, x-ray diffraction, scanning electron microscopy, and microwave dielectric measurements. A small amount of BCB addition to ZTN can lower the sintering temperature from 1100°C to 900°C. The reduced sintering temperature was attributed to the formation of the BCB liquid phase. The ZTN ceramics containing 3.0 wt.% BCB sintered at 900°C for 2 h have good microwave dielectric properties of Q × f = 19,002 GHz (at 6.48 GHz), ε _r = 45.8 and τ _f  = 23.2 ppm/°C, which suggests that the ceramics can be applied in multilayer microwave devices, provided that Ag compatibility exists.     

Ultra-Low Loss Microwave Dielectric Ceramic Li<Subscript>2</Subscript>Mg<Subscript>2</Subscript>TiO<Subscript>5</Subscript> and Low-Temperature Firing Via B<Subscript>2</Subscript>O<Subscript>3</Subscript> Addition

Li₂Mg₂TiO₅, a rock-salt structured ceramic fabricated by a solid-state sintering technique, was characterized at the microwave frequency band. As a result, a microwave dielectric permittivity (ε_r) of 13.4, a quality factor of 95,000 GHz (at 11.3 GHz), and a temperature coefficient of resonance frequency (τ_f) of ? 32.5 ppm/°C have been obtained at 1320°C. Li₂Mg₂TiO₅ ceramics have low permittivity, a broad processing temperature region, and a low loss, making them potential applications in millimeter-wave devices. Furthermore, B₂O₃ addition efficiently lowered the sintering temperature of Li₂Mg₂TiO₅ to 900°C, which opens up their possible applications in low-temperature co-fired ceramics (LTCC) technology.     

Thermoelectric Properties of Nb-Doped Ordered Mesoporous TiO<Subscript>2</Subscript>

Mesoporous materials have pores with diameters between 2 nm and 50 nm, the presence of which generally decreases the thermal conductivity of the material. By incorporating mesoporous structures into thermoelectric materials, the thermoelectric properties of these materials can be improved. Although TiO₂ is an ordinary insulator, reduced TiO₂ shows better electrical conductivity and is therefore a potential thermoelectric material. Furthermore, the addition of a dopant to TiO₂ can improve its electrical conductivity. We hypothesized that, by doping ordered mesoporous TiO₂ films with niobium, we would be able to minimize the thermal conductivity and maximize the electrical conductivity. To investigate the effects of Nb doping and a mesoporous structure on the thermoelectric characteristics of TiO₂ films, Nb-doped mesoporous films were investigated using x-ray diffraction, ellipsometry, four-point probe measurements, and thermal conductivity analysis. We found that Nb doping of ordered mesoporous TiO₂ films improved their thermoelectric properties.     

Memory Effect of Metal-Insulator-Silicon Capacitor with HfO<Subscript>2</Subscript>-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> Multilayer and Hafnium Nitride Gate

Metal-insulator-silicon capacitors have been fabricated using novel insulators of SiO₂/HfO₂-Al₂O₃-HfO₂ (HAH)/Al₂O₃ and metallic HfN gate, exhibiting a program-erasable characteristic. The memory capacitor presents a large memory window of 2.4 V under +12 V program/–14 V erase for 10 ms, no erase saturation, and sufficient electron- and hole-trapping efficiencies such as an electron density of ∼7 × 10¹² cm^–2 under 13 V program for 0.5 ms and a hole density of ∼4 × 10¹² cm^–2 under –12 V erase for 0.5 ms. The observed properties are attributed to the introduction of high permittivity atomic-layer-deposited HAH/Al₂O₃ as well as high work function HfN gate. The related mechanism is addressed accordingly.     

Effects of Piezoelectric Potential of ZnO on Resistive Switching Characteristics of Flexible ZnO/TiO<Subscript>2</Subscript> Heterojunction Cells

Flexible resistance random access memory (ReRAM) devices with a heterojunction structure of PET/ITO/ZnO/TiO₂/Au were fabricated on polyethylene terephthalate/indium tin oxide (PET/ITO) substrates by different physical and chemical preparation methods. X-ray diffraction, scanning electron microscopy and atomic force microscopy were carried out to investigate the crystal structure, surface topography and cross-sectional structure of the prepared films. X-ray photoelectron spectroscopy was also used to identify the chemical state of Ti, O and Zn elements. Theoretical and experimental analyses were conducted to identify the effect of piezoelectric potential of ZnO on resistive switching characteristics of flexible ZnO/TiO₂ heterojunction cells. The results showed a pathway to enhance the performance of ReRAM devices by engineering the interface barrier, which is also feasible for other electronics, optoelectronics and photovoltaic devices.     

Water-Induced Degradation in (Bi<Subscript>1/2</Subscript>Na<Subscript>1/2</Subscript>)TiO<Subscript>3</Subscript> Lead-Free Ceramics

Chemical stability of (Bi_1/2Na_1/2)TiO₃ (BNT) ceramics against water was studied through a comparison experiment. Immersion of BNT in 0.01 M NaOH solution showed no noticeable influence, while BNT ceramics were seriously affected when hydrogen was deposited on them through the electrolysis of water in the solution: the capacitance was obviously decreased and the dielectric loss was dramatically increased in the low-frequency range. X-ray diffraction analysis indicated that hydrogen was first dissolved into BNT and then caused decomposition, with some other phases formed. As water-induced degradation is an important cause of degradation for piezoelectric devices, it is important to ensure that the chemical stability of BNT is not decreased when using doping and/or the formation of a solid-state solution with other perovskite-type oxides in order to improve the piezoelectric properties of BNT-based ceramics.     

Effect of ZnO Nanoparticles on the Sintering Behavior and Physical Properties of Bi<Subscript>0.5</Subscript>(Na<Subscript>0.8</Subscript>K<Subscript>0.2</Subscript>)<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript> Lead-Free Ceramics

Sintered Bi_0.5(Na_0.8K_0.2)_0.5TiO₃ + x wt.% ZnO nanoparticle (BNKT–xZnO_n) ceramics have been fabricated by conventional annealing with the aid of ultrasound waves for preliminary milling. Because of the presence of the liquid Bi₂O₃–ZnO phase at the eutectic point of 738°C, the sintering temperature decreased from 1150°C to 1000°C, and the morphology phase boundary of BNKT–xZnO_n ceramics can be clarified by two separated peaks at (002)_T and (200)_T of 2θ in the x-ray diffraction (XRD) patterns. The improvement of ferroelectric properties has been obtained for BNZT–0.2 wt.% ZnO_n ceramics by the increase of remanent polarization up to 20.4 μC/cm² and a decrease of electric coercive field down to 14.2 kV/cm. The piezoelectric parameters of the ceramic included a piezoelectric charge constant of d ₃₁ = 78 pC/N; electromechanical coupling factors k _p = 0.31 and k _t = 0.34, larger than the values of 42 pC/N, 0.12 and 0.13, respectively, were obtained for the BNKT ceramics.     

Molybdenum-Loaded Anatase TiO<Subscript>2</Subscript> Nanoparticles With Enhanced Optoelectronics Properties

The structural, optical and electrical properties of molybdenum nanoparticles (Mo-NPs)-loaded anatase TiO₂ were investigated using x-ray diffraction, UV–Vis diffuse reflectance, and Fourier transform infrared and complex impedance spectroscopy. x-ray diffraction showed that Mo-NPs incorporation induced a decrease in particle size from 30 nm to 21 nm of TiO₂ and TiO₂-Mo, respectively, producing a slight structure expansion. Mo-NPs dispersion resulted in a slight decrease in the optical band gap energy from 3.85 eV to 3.51 eV. Slight shifts towards higher wavelengths were attributed to the change in the acceptor capacity level induced by Mo-NPs. In addition, the ac impedance studies show the effect of Mo-NPs incorporation that appeared to be responsible for conductance of enhancement. The conduction mechanism is based on space charge-limited current via deep levels with different energy positions in the band gap. The temperature dependence of electrical properties showed that both capacitance and conductance of TiO₂-Mo samples increased with increasing temperature. At low frequency, the relaxation phenomenon is related to the surface effect. The results will be beneficial to further developing titanium dioxide photo-catalysts.     

Memory Switching Characteristics in Amorphous Ga<Subscript>2</Subscript>Se<Subscript>3</Subscript> Films

Ga₂Se₃ films were deposited by the thermal evaporation of the bulk material onto pyrographite substrates under vacuum. The I–V characteristic curves were found to be typical for a memory switch. They exhibited a transition from an ohmic region in the lower-field region to a non-ohmic region in the high-field region in the preswitching region, which has been explained by the Poole–Frenkel effect. The temperature dependence of the resistance in the ohmic region was found to be that of a thermally activated process. It was also found that the mean value of the switching voltage increased linearly with increasing film thickness in the range from 291 nm to 516 nm, while it decreased exponentially with increasing temperature in the range from 298 K to 393 K. The results were explained in accordance with the electrothermal model for the switching process.     

Photovoltaic properties of interfaces of organic films of substituted perylene with TiO<Subscript>2</Subscript> and SnO<Subscript>2</Subscript> surfaces

The photovoltaic effect has been detected and studied in structures based on ultrathin vacuum-deposited organic films of perylene-3,4,9,10-tetracarboxylic acid dianhydride on the titanium and tin dioxide surfaces. The interfacial potential barrier shape in these structures is studied by low-energy electron total current spectroscopy. Changes in the surface potential upon exposure to visible light are recorded in situ using an electron-beam probe with energies from 0 to 25 eV. The photovoltage is detected at incident photon energies of 1.5–2.5 eV, which corresponds to the organic film absorption range and simultaneously to the transmission band of titanium and tin dioxides. An analysis of the spectral distributions and transient responses shows that two components of the observed photovoltage can be distinguished. The relation of one of the components to the excitation of interband transitions in the organic film and another component to electronic transitions involving interfacial energy states are discussed.     

Crystallization behavior and ferroelectric properties of PbTiO<Subscript>3</Subscript>/Ba<Subscript>0.85</Subscript>Sr<Subscript>0.15</Subscript>TiO<Subscript>3</Subscript>/PbTiO<Subscript>3</Subscript> sandwich thin film on Pt/Ti/SiO<Subscript>2</Subscript>/Si substrates

A PbTiO₃/Ba_0.85Sr_0.15TiO₃/PbTiO₃ (PT/BST15/PT) sandwich thin film has been prepared on Pt/Ti/SiO₂/Si substrates by an improved sol-gel technique. It is found that such films under rapid thermal annealing at 700°C crystallize more favorably with the addition of a PbTiO₃ layer. They possess a pure, perovskite-phase structure with a random orientation. The polarization-electric field (P-E) hysteresis loop and current-voltage (I-V) characteristic curves reveal that a PT/BST15/PT film exhibits good ferroelectricity at room temperature. However, no sharp peak, only a weak maximum, is observed in the curves of the dielectric constant versus temperature. The dielectric constant, loss tangent, leakage current density at 20 kV/cm, remnant polarization, and coercive field of the PT/BST15/PT film are 438, 0.025, 1.3 × 10⁻⁶ Acm⁻², 2.46 μCcm⁻², and 41 kVcm⁻¹, respectively, at 25°C and 10 kHz. The PT/BST15/PT film is a candidate material for high sensitivity elements for uncooled, infrared, focal plane arrays (UFPAs) to be used at near ambient temperature.     

Optical Properties of K<Subscript>2</Subscript>O-Li<Subscript>2</Subscript>O-WO<Subscript>3</Subscript>-B<Subscript>2</Subscript>O<Subscript>3</Subscript> Glasses: Evidence of Mixed Alkali Effect

Glass with compositions xK₂O-(30 ? x)Li₂O-10WO₃-60B₂O₃ for 0 ≤ x ≤ 30 mol.% have been prepared using the normal melt quenching technique. The optical reflection and absorption spectra were recorded at room temperature in the wavelength range 300–800 nm. From the absorption edge studies, the values of the optical band gap (E _opt) and Urbach energy (ΔE) have been evaluated. The values of E _opt and ΔE vary non-linearly with composition parameter, showing the mixed alkali effect. The dispersion of the refractive index is discussed in terms of the single oscillator Wemple Di-Domenico model.     

Effect of Vacancy Distribution on the Thermal Conductivity of Ga<Subscript>2</Subscript>Te<Subscript>3</Subscript> and Ga<Subscript>2</Subscript>Se<Subscript>3</Subscript>

Our group has focused attention on Ga₂Te₃ as a natural nanostructured thermoelectric material. Ga₂Te₃ has basically a zincblende structure, but one-third of the Ga sites are structural vacancies due to the valence mismatch between Ga and Te. It has been confirmed that (1) vacancies in Ga₂Te₃ exist as two-dimensional (2D) vacancy planes, and (2) Ga₂Te₃ exhibits an unexpectedly low thermal conductivity (κ), most likely due to highly effective phonon scattering by the 2D vacancy planes. However, the effect of the size and periodicity of the 2D vacancy planes on κ has been unclear. In addition, it has also been unclear whether only the 2D vacancy planes reduce κ or if point-type vacancies can also reduce κ. In the present study, we tried to prepare Ga₂Te₃ and Ga₂Se₃ with various vacancy distributions by controlling annealing conditions. The atomic structures of the samples were characterized by means of transmission electron microscopy, and κ was evaluated from the thermal diffusivity measured by the laser flash method. The effects of vacancy distributions on κ of Ga₂Te₃ and Ga₂Se₃ are discussed.     

Effect of the mixture composition on the electrophysical parameters and emission spectra of CF<Subscript>2</Subscript>Cl<Subscript>2</Subscript>/Ar and CF<Subscript>2</Subscript>Cl<Subscript>2</Subscript>/He plasma

The effect of the mixture was analyzed on the electrophysical parameters and emission spectra of CF₂Cl₂/Ar and CF₂Cl₂/He plasma. Data on the gas temperature and reduced electric field intensity are obtained. Based on the analysis of the plasma emission spectra, it is suggested that the dilution of CF₂Cl₂ with argon or helium, even in a 1-to-1 ratio, does not cause significant changes in the concentration of Cl atoms.     

On the photoconductivity of TlInSe<Subscript>2</Subscript>

The current–voltage (I–V) and photocurrent–light intensity (I _pc –Φ) characteristics and the photoconductivity relaxation kinetics of TlInSe₂ single crystals are investigated. Anomalously long relaxation times (τ ≈ 10³ s) and some other specific features of the photoconductivity are observed, which are explained within the barrier theory of inhomogeneous semiconductors. The heights of the drift and recombination barriers are found to be, respectively, E _dr ≈ 0.1 eV and E _r ≈ 0.45 eV.     

Protein-Assembled Nanocrystal-Based Vertical Flash Memory Devices with Al<Subscript>2</Subscript>O<Subscript>3</Subscript> Integration

This work presents vertical flash memory devices with protein-assembled PbSe nanocrystals as a floating gate and Al₂O₃ as a control oxide. The advantage of a vertical structure is that it improves cell density. Protein assembly improves uniformity of nanocrystals, which reduces threshold voltage variation among devices. The introduction of Al₂O₃ as a control oxide provided lower voltage/faster operation and hence less power consumption compared with the devices fabricated with SiO₂. The integration of Al₂O₃ appeared to be compatible with the protein assembly approach. In conclusion, Al₂O₃ has the potential to become the high-k control oxide due to its relatively high electron/hole barrier heights, and high permittivity.     

Effect of a high electric field on the conductivity of MnGa<Subscript>2</Subscript>S<Subscript>4</Subscript>, MnIn<Subscript>2</Subscript>S<Subscript>4</Subscript>, and MnGaInS<Subscript>4</Subscript> single crystals

The results of studying the effect of a high electric field on the conductivity of MnGa₂S₄, MnIn₂S₄, and MnGaInS₄ single crystals are reported. The activation energy is determined in high and low electric fields. It is established that the decrease in the activation energy with increasing the external voltage is associated with decreasing the depth of the potential well, in which the electron is located.