低能Xe离子辐照在Al表面上的光辐射研究

本文测量了200~550 keV的Xe10+离子轰击高纯度（9999%）Al表面诱发的溅射Al原子的光发射,研究了Al Ⅰ 30810、30914、39452、39628 nm光谱线强度比值和光子产额随入射离子能量的变化趋势。在本实验能量范围内,辐射光谱线强度比值随入射离子能量增加几乎不变,而发射谱线的光子产额随入射离子能量的增加呈现出不同趋势：入射离子能量为450 keV时,光子产额出现极大值,入射离子能量超过450 keV时,光子产额随能量的增加而减少,其变化趋势与核阻止本领随能量增加的变化没有出现类同的变化特征。结合核阻止和电子阻止效应对实验结果进行了讨论,结果表明：入射离子能量低于450 keV时,核阻止在碰撞中起主导作用,入射离子能量高于450 keV时,电子阻止在碰撞中起主导作用。     

He离子辐照对锐钛矿TiO_2薄膜结构与性能的影响

用多弧离子镀方法制备锐钛矿二氧化钛(TiO_2)薄膜,研究不同剂量与能量的He离子辐照对TiO_2薄膜结构与性能的影响。用X射线衍射仪(XRD)、激光拉曼光谱(RM)、场发射扫描电镜(SEM)、原子力显微镜(AFM)、四探针仪(FPPT)和紫外可见分光度仪(W)分别表征辐照前后TiO_2薄膜相结构、分子结构、结构形貌、电阻率及光反射率。结果表明:薄膜的相结构未发生明显转变;薄膜电阻率与结晶度发生变化;薄膜柱状结构逐渐消失;辐照剂量一定时,He离子能量越小,薄膜表面粗糙度与光反射率越大;能量一定,剂量越大导致薄膜光反射率越小。     

A Numerical Study of Cracks Appearance on Tungsten Surface After High Intense Pulsed Ion Beam Irradiation

Due to the outstanding physical properties, Tungsten has been proposed for use in the divertor of future fusion devices. However, tungsten shall face strong particle bombardment from the plasma, which causes severe damage to the material. The purpose of this work is to build such an accurate analytical model which can predict the damages in target material like crack production and propagation after high intense pulsed ion beam irradiation. Hence, a two-dimensional finite element method is used to study the effect of high intense pulsed ion beam on tungsten surface numerically. To judge temperature and stress distribution in material, thermal conduction model is combined with non-linear fracture mechanics model and J-Integral parameter is used as a criterion to judge the crack propagation. Simulation results reveal that different crack heights and sizes can affect the results and there is a critical depth for crack propagation. The model gives good results to real experimental observations and has potential applications for different intense pulsed electron/plasma beams and different target materials as well.     

Effect of Electron Irradiation on Polypropylene Films

Effect of both electron beam irradiation on the properties of polypropylene (PP) films the irradiation on the different layers of a multilayer PP film are studied. A Fourier transform infrared spectroscope was used to investigate the chemical structure of the films. The results showed that the chemical properties of the first layer were improved, that is, more functional groups responsible for dye ability and hydrophilicity of the film were produced on its surface, while noticeable improvement was not detected on the surface of other layers. This was also confirmed by testing the dye ability of the layers. However, the results obtained by atomic force microscopy showed that the electron irradiation caused some topographical changes, not only on the surface of the first layer but also on the others.     

重离子辐照模拟的实验验证(英文)

采用正电子湮没寿命技术研究了等效剂量的5.28×1016cm-2 85 MeV氟离子和3×1020cm-2En≥1 MeV中子辐照的α-Al2O3中产生的辐射损伤及其细致的热退火行为。实验结果表明重离子辐照的α-Al2O3中的正电子湮没寿命及其强度与中子辐照的α-Al2O3中的完全符合,从实验上验证了重离子辐照可以很好地模拟中子(质子)的辐照。     

离子辐照样品的表面处理方法研究

离子辐照实验已广泛应用于评价反应堆压力容器钢的辐照损伤效应,这对样品表面状态提出了苛刻的要求。分别采用机械抛光、振动抛光、电化学抛光与真空退火的方法对RPV钢样品表面进行了处理,采用慢束正电子湮没-多普勒展宽谱实验表征了样品表面的损伤层状态,采用纳米压痕测试表征了样品表面的应力状态。实验结果表明:对于RPV钢离子辐照样品,建议优先采用机械抛光+真空退火处理的方法处理样品表面,其次可采用电化学抛光处理方法。同时指出了该结论也适用于材料化学成分、强度与韧性等力学性能及热处理状态等相近的其他低合金钢离子辐照样品的表面处理。     

核石墨的氙离子辐照效应

采用氙离子辐照表面抛光的IG110核石墨样品,对辐照后核石墨样品的表面形貌和辐照损伤进行表征。结果表明,室温辐照导致石墨晶粒严重的各向异性肿胀。但肿胀并未导致晶间裂纹的产生,这被归因于核石墨的辐照蠕变机制。严重的肿胀导致核石墨大量孔隙收缩,说明在熔盐堆中辐照在一定剂量范围内不会促进熔盐对核石墨的浸渗。通过拉曼光谱的分析推断,G峰宽度随着辐照剂量的增加而单调增加,随着退火温度的增加又逐渐减小,因而是表征核石墨辐照损伤的很好的参数。     

高温He离子辐照GH3535合金的损伤效应

采用500 keV的He离子在750 ℃下对GH3535合金样品进行辐照,然后利用掠入射X射线衍射（GIXRD）、透射电子显微镜（TEM）和纳米压痕仪分别对样品的氦泡和位错环辐照缺陷的演化及纳米硬度的变化进行了研究。结果表明,GH3535合金晶格辐照后发生了轻微畸变;离子辐照在样品中形成了大量尺寸为2～5 nm的氦泡和位错环。辐照产生的氦泡和位错环等缺陷在基体中钉扎位错,从而使材料产生了辐照硬化现象,样品硬度随辐照剂量的增加而增大。当辐照剂量达2×1016 cm-2时,辐照样品发生了明显的硬化饱和现象,利用Nix Gao模型计算得此时的硬化程度为64%。     

DLC薄膜中子辐照效应

采用射频等离子体化学汽相沉积法得到了类金刚石（以下简称DLC）薄膜,并用能量为14MeV的中子对其进行辐照,辐照剂量为1.4×1012n/cm2～7.2×1012n/cm2。通过Raman及红外光谱分析得出,中子辐照造成膜中SP3C-C键的明显减少及SP2C=C键的增加,并形成少见的非晶型SP1C≡C键碳（直线型碳）,使DLC膜进一步非晶化。经辐照后的DLC薄膜红外透过率均有所提高,在实验剂量范围内,基本上与辐照剂量无关。     

离子辐照导致硼硅酸盐玻璃浸出性能的变化北大核心CSCD

在高放射性废物深地质处置过程中,放射性核素衰变引起的强辐射场会导致玻璃固化体浸出性能的变化。本工作利用15 MeV Si离子辐照模拟深地质处置强辐射场,采用MCC-1静态浸泡法在pH=9.0的KOH溶液中对硼硅酸盐玻璃分别浸泡1、3、7、14、28 d,结合电感耦合等离子体发射光谱仪、拉曼光谱仪以及扫描电镜研究了辐照前后玻璃样品的浸出行为。结果表明:随着浸出时间推移,玻璃表面会不断地腐蚀脱落;辐照后玻璃样品的浸出率明显高于未辐照玻璃样品的,蚀变层结构与元素组成无明显差异,但厚度明显增大;形成的蚀变层中Na元素和B元素基本耗尽;蚀变层中SiO_(2)网络体结构溶解,生成大量的Si—OH键及硼硅酸盐结构,并出现四配位B单元向三配位B单元的转变。     

1.5MeV电子辐照平台屏蔽改造

针对一台功率为15kW的1.5 MeV电子辐照平台,进行了屏蔽计算分析与改造设计工作。根据辐照平台厂房布局建立三维模型,使用蒙特卡罗方法进行了相应屏蔽计算。通过对辐照平台主屏蔽体外光子剂量率的计算,对已有建筑物墙体的屏蔽效果进行评估。评估结果表明,建筑物四周墙体厚度满足设计要求。对辐照室和门洞等局部位置进行了屏蔽计算设计,通过对不同屏蔽厚度的计算结果进行比较,给出了满足设计要求的合理可行的设计方案。为验证屏蔽计算结果,在工程验收阶段,对周围人员活动区域进行了现场测量。测量结果表明,辐照平台原有主体屏蔽及新增局部屏蔽可使光子剂量率低于设计目标值,满足防护要求。     

Ion implantation doping of Si for optoelectronic applications

We show that the major problems hampering efficient performances of Si in optoelectronic applications, i.e. the achievement of efficient light emission and fast modulation, can be successfully approached by a proper engineering of its optical properties. In particular, the incorporation of a high Er concentration, if concomitant with codoping with other impurities such as O and F, allows to achieve efficient 1.54 μm light emission at room temperature. This emission arises from an electrically excitable, atomically sharp, intra 4f transition of the Er ions. The formation of impurity-rare earth ion complexes is shown to enhance the effective solubility of Er in Si and optimize its electrical properties thus providing a higher excitation efficiency and a reduction of the temperature quenching of the luminescence yield. Furthermore we show that the proper design of a Si light emitting diode, allowing the incorporation of Er ions within the depletion layer region of a p⁺-n⁺ junction, allows to achieve simultaneously high efficiency and fast modulation of the electroluminescence signal. In fact, under reverse bias, Er ions are pumped with a cross section of 6 × 10⁻¹⁷ cm² and decay with a lifetime of 100 μs, which guarantees an internal quantum efficiency > 10⁻⁴ and an emitted power of 30 μW at room temperature. On the other hand, at the diode turn-off, the onset of fast, non-radiative, Auger-type decay processes of the excited ions allow a very fast turn off of the electroluminescence signal.     

氦离子辐照烧结碳化硅损伤效应研究

利用中国科学院近代物理研究所320 kV高压平台提供的氦离子辐照烧结碳化硅,辐照温度从室温到1 000 ℃,辐照注量为1015~1017 cm-2。辐照完成后,进行退火处理,然后开展透射电子显微镜、拉曼光谱、纳米硬度和热导率测试。研究发现,烧结碳化硅中氦泡形核阈值注量低于单晶碳化硅。同时,氦泡形貌和尺寸与辐照温度、退火温度有关。另外,对辐照产生的晶格缺陷、元素偏析进行了研究。结果表明,辐照产生了大量的缺陷团簇,同时氦泡生长也会发射间隙子,在氦泡周围形成间隙型位错环。在晶界处,容易发生碳原子聚集。辐照导致材料先发生硬化而后发生软化,且热导率降低。     

紫外辐照对溶胶-凝胶光学薄膜性能的影响

采用溶胶-凝胶技术,使用旋涂方法在K9玻璃和单晶硅片上制备各种光学薄膜,并用紫外光源作为高能光子源辐照溶胶-凝胶光学薄膜。使用扫描电镜(SEM)、原子力显微镜(AFM)、椭偏仪、铅笔硬度仪等测量和分析薄膜的特性。用输出波长1 064 nm、脉宽15 ns电光调Q激光系统测试薄膜的激光损伤阈值。结果表明,紫外光辐照可提高薄膜折射率和机械性能。采用紫外预处理还能将节瘤缺陷转换成孔洞缺陷,从而有效提高薄膜的激光损伤阈值,其中,单层ZrO2薄膜的激光损伤阈值达到50.6 J/cm2(1 064 nm,1 ns)。与当前流行的激光预处理技术相比,紫外预处理的设备简单、易于操作。溶胶-凝胶多层膜经紫外光处理后,有效提高了多层膜膜层的均匀性。     

硅三极管电子辐照的残余电压效应

研究了双极型晶体管（BJT）高能电子（1。5 MeV）辐照的总注量效应,电子辐照的总注量为5×10¹³～1.2×10¹⁶ cm^-2。实验结果表明,三极管经电子辐照后,有残余电压产生,残余电压随电子总注量的增加而增大。认为是由于辐照后产生的缺陷能级导致的去载流子效应使得BC结自建电势差变化量大于BE结,以及缺陷能级使BC结导带差变化量大于BE结这两方面原因引起的。     

Thirtieth Anniversary of Biannual International Conference on Ion Beam Modification of Materials,IBMM – From “Ion Implantation” to “Ion Beam Modification”

A review is given on the start and early years of the biannual conferences ‘Ion Beam Modification of Materials’ (IBMM), on the thirtieth anniversary of the meeting held in Budapest, 1978. Organizers of this first IBMM conference decided to broaden the scope of the previous few conferences on ion implantation to embrace side effects, like ion beam mixing, etc. also by giving a new name. The start was not free from influence of politics of the times. The scientific success, however, gave enough ammunition for the coming times to IBMM, mainly through continuous support of leading scientists of the field. Thus, it became the most important forum of studies of basics of ion beam processes. Numerous references illustrate the start and the early topics dealt with at the meetings.     

Ion beam induced amorphization and recrystallization of Si/SiC/Si layer systems

Epitaxial, buried silicon carbide (SiC) layers have been fabricated in (100) and (111) silicon by ion beam synthesis (IBS). In order to study the ion beam induced epitaxial crystallization (IBIEC) of buried SiC layers, the resulting Si/SiC/Si layer systems were amorphized using 2 MeV Si²⁺ ion irradiation at 300 K. An unexpected high critical dose for the amorphization of the buried layers is observed. Buried, amorphous SiC layers were irradiated with 800 keV Si⁺ ions at 320 and 600°C, respectively, in order to achieve ion beam induced epitaxial crystallisation. It is demonstrated that IBIEC works well on buried layers and results in epitaxial recrystallization at considerably lower target temperatures than necessary for thermal annealing. The IBIEC process starts from both SiC/Si interfaces and may be accompanied by heterogenous nucleation of poly-SiC as well as interfacial layer-by-layer amorphization, depending on irradiation conditions. The structure of the recrystallized regions in dependence of dose, dose rate, temperature and crystal orientation is presented by means of TEM investigations.     

Irradiation creep transients in Ni-4 at.% Si

In the course of irradiation creep experiments on Ni-4 at.% Si alloy, two types of creep transients were observed on the termination of irradiation. The short term transient was completed within one minute while the long term transient persisted for nearly ten hours. A change in the temperature distribution was excluded from the possible causes, partly because the stress dependence of the observed transient strains was not linear, and partly because the strain increase expected from the temperature change was much smaller than the observed value. Transient behavior of point defects was examined in conjunction with the climb-glide mechanism and the steady-state irradiation creep data. Calculated creep transient due to excess vacancy flux to dislocations was in good agreement with the observed short term transient. The long term transient appears to be a result of dislocation microstructure change. The present results suggest an enhanced irradiation creep under cyclic irradiation conditions which will be encountered in the early generations of fusion reactors.     

Modification of a-Si under 100 eV Si atom bombardment

By molecular dynamics simulation, we study the response of an initially defect-free a-Si sample to 100 eV Si atom bombardment for fluences up to 2.6×10¹⁵ cm⁻², i.e., an equivalent of 4 ML coverage. Defects (over-coordinated atoms) are introduced into the sample at depths extending up to 30 Å, far beyond the average projectile range of 5.5 Å. This build-up of over-coordinated atoms is accompanied by a local increase of pressure of more than 1 GPa. For comparison, we also study atom bombardment of a strongly under-dense a-Si sample, prepared by simulated growth. This sample compactifies under irradiation, the initially high bulk concentration of under-coordinated atoms is reduced, and the initially tensile pressure in the sample relaxes.     

Effect of Fast-Neutron Irradiation on Optical Attenuation in Compound Semiconductors

Recently a model was proposed to account for anomalous infrared attenuation noted experimentally for fast-neutron-irradiated, compound semiconductors. The model represents neutron damage by localized phase transitions to a high-pressure metallic-like state. It is shown that this model not only accounts for the anomalous, continuous optical attenuation at photon energies less than the band gap, but also can explain the absorption edge fuzziness noted for neutron-irradiated GaAs. The optical attenuation produced by embedded metallic zones at frequencies above the absorption edge is derived, and it is shown that the metallic resonance absorption band is altered from the usual Lorentzian shape. It is shown that in GaAs irradiated with fast neutrons at sufficiently high doses the resonant absorption by the metallic phase can dominate the host semiconductor absorption.