Chemical Interaction between Silicon Nitride and Titanium Carbide Powder

Chemical interaction within the system Si₃N₄-TiC was investigated in the present study by using thermodynamic calculations and kinetic analyses. The thermodynamic stabilities of such Si₃N₄-TiC composites as Si₃N₄-TiN-C and Si₃N₄-Ti(C,N)-C, and SiC-Ti(C,N) stability regions were defined and related to temperature and nitrogen partial pressures. Kinetic analyses were performed by constructing a relative weight-loss analysis of various Si₃N₄:TiC molar ratios reacted at temperatures from 1300° to 1750°C in an argon atmosphere. The reaction rates increased with the decreases in the Si₃N₄:TiC ratio and with increases in temperature. The reaction products consisted mainly of SiC and Ti(C,N) phases. The overall chemical interaction observed in the present study is attributable to chemical reactions between Si₃N₄ and TiC and to the diffusion of carbon and nitrogen through the reaction layer after a dense reaction product layer had covered the titanium carbide.     

Tribological Behavior of Mo5Si3-Particle-Reinforced Silicon Nitride Composites

The tribological behavior of Mo₅Si₃-particle-reinforced silicon nitride (Si₃N₄) composites was investigated by pin-on-plate wear testing under dry conditions. The friction coefficient of the Mo₅Si₃–Si₃N₄ composites and Si₃N₄ essentially decreased slowly with the sliding distance, but showed sudden increase for several times during the wear testing. The average friction coefficient of the Si₃N₄ decreased with the incorporation of submicrometer-sized Mo₅Si₃ particles and also as the content of Mo₅Si₃ particles increased. When the Mo₅Si₃–Si₃N₄ composites were oxidized at 700°C in air, solid-lubricant MoO₃ particles were generated on the surface layer. Oxidized Mo₅Si₃–Si₃N₄ composites showed self-lubricating behavior, and the average friction coefficient and wear rate of the oxidized 2.8 wt% Mo₅Si₃–Si₃N₄ composite were 0.43 and 0.72 × 10⁻⁵ mm³ (N·m)⁻¹, respectively. Both values were ∼30% lower than those for the Si₃N₄ tested in an identical manner.     

Tribooxidational Effects on Friction and Wear Behavior of Silicon Nitride/Tool Steel and Silicon Nitride/Gray Cast Iron Contacts

Unlubricated pin-on-disk wear tests of Si₃N₄ against tool steel and gray cast iron were performed at 5 N of normal load, 0.5 m/s of sliding speed, and environmental temperature in the range 22°-600°C. The friction coefficient of Si₃N₄ sliding against tool steel and gray cast iron had maximum values of 0.88-0.98 for tests at 100°C. The friction coefficient of Si₃N₄ sliding against gray cast iron couples had minimum values of 0.48-0.57 at 400°C. Because of the increased third-body protection, the wear coefficient of the Si₃N₄ pins of the Si₃N₄/gray cast iron couples decreased by 1 order of magnitude from 1.6 10^-5 mm³/(Nm) at room temperature to 1.3 10^-6 mm³/(Nm) at 600°C. Fe₂O₃ and Fe₃O₄ resulting from tribooxidation of the metallic disks were the main constituents of the wear debris and adherent tribolayers. Activation energy values (6.3-13.7 kJ/mol) were comparable to those of oxidation wear of steel (7.3-11.8 kJ/mol) but were much lower than the activation energy for oxidation of iron alloys in static conditions. Calculations of the activation energy of the oxidation wear corroborate the morphological observations of a sacrificial action of the metallic surface protecting the ceramic material.     

Carbothermal Reaction of Silica–Phenol Resin Hybrid Gels to Produce Silicon Nitride/Silicon Carbide Nanocomposite Powders

A carbothermal reaction of silica–phenol resin hybrid gels prepared from a two-step sol–gel process was conducted in atmospheric nitrogen. The gels were first pyrolyzed into homogeneous silica–carbon mixtures during heating and subsequently underwent a carbothermal reaction at higher temperatures. Using a gel-derived precursor with a C/SiO₂ molar ratio higher than 3.0, Si₃N₄/SiC nanocomposite powders were produced at 1500°–1550°C, above the Si₃N₄–SiC boundary temperature. The predominant phase was Si₃N₄ at 1500°C, and SiC at 1550°C. The Si₃N₄ and SiC phase contents were adjustable by varying the temperature in this narrow range. The phase contents could also be adjusted by changing the starting carbon contents, or by its combination with varying reaction temperature. A two-stage process, i.e., a reaction first at 1550°C and then at 1500°C, offered another means of simple and effective control of the phase composition: the Si₃N₄ and SiC contents varied almost linearly with the variation of the holding time at 1550°C. The SiC was nanosized (∼13 nm, Scherrer method) formed via a solid–gas reaction, while the Si₃N₄ has two morphologies: elongated microsized crystals and nanosized crystallites, with the former crystallized via a gaseous reaction, and the latter formed via a solid–gas reaction. The addition of a Si₃N₄ powder as a seed to the starting gel effectively reduced the size of the Si₃N₄ produced.     

Synthesis of Silicon Nitride/Silicon Carbide Nanocomposite Powders through Partial Reduction of Silicon Nitride by Pyrolyzed Carbon

An alternative method to incorporate nanometer-sized silicon carbide (SiC) particles into silicon nitride (Si₃N₄) powder was proposed and investigated experimentally. Novolac-type phenolic resin was dissolved in ethanol and mixed with Si₃N₄ powder. After drying and curing, the resin was converted to reactive carbon via pyrolysis. Si₃N₄ powder was partially reduced carbothermally using the pyrolyzed carbon, and nanometer-sized SiC particles were produced in situ at 1530°-1610°C in atmospheric nitrogen. At temperatures <1550°C, the reduction rate was low and the SiC particles were very small; no SiC whiskers or barlike SiC was observed. At 1600°C, the reduction rate was high and the reaction was close to completion after only 10 min, with the appearance of SiC whiskers as well as curved, barlike, and equiaxial SiC, all of which were dozens of nanometers in diameter; this size is greater than that at observed temperatures <1550°C. A longer soaking time at 1600°C led to agglomerates. SiC particles were close to the surface of the Si₃N₄ particles. The SiC content could be adjusted by changing the carbon content before reduction and the reduction temperature. A reaction mechanism that involved the decomposition of Si₃N₄ has been proposed.     

Post-Hot-Pressing and High-Temperature Bending Strength of Reaction-Bonded Silicon Nitride-Molybdenum Disilicide and Silicon Nitride-Tungsten Silicide Composites

A hot-pressing technique was used for the further densification of reaction-bonded silicon nitride-molybdenum disilicide and silicon nitride-tungsten silicide (Si₃N₄-MoSi₂ and Si₃N₄-WSi₂, respectively) compacts that were prepared via a presintering step and a nitriding process from silicon-molybdenum or silicon-tungsten powders. After hot pressing was performed at 1650°C (25 MPa for 1 h), most of the alpha-Si₃N₄ that formed during the reaction-bonding process was transformed to β-Si₃N₄ and, moreover, a very small amount of Mo₅Si₃ (W₅Si₃) was formed in addition to MoSi₂ (WSi₂). Three- and four-point bend tests were performed at room temperature (25°C), 1000°C, 1200°C, and 1400°C. The bend strength of the Si₃N₄-WSi₂ composite increased slightly from room temperature up to 1000°C, whereas the Si₃N₄-MoSi₂ composite showed a more-pronounced increase up to 1200°C. Microstructural analysis was performed on the fracture surfaces of both composites that were tested at different temperatures.     

Amorphous Intergranular Films in Silicon Nitride Ceramics Quenched from High Temperatures

High-temperature microstructures of an MgO-hot-pressed Si₃N₄ and a Yb₂O₃+ Al₂O₃-sintered/annealed Si₃N₄ were obtained by quenching thin specimens from temperatures between 1350° and 1550°C. Quenching materials from 1350°C produced no observable changes in the secondary phases at triple-grain junctions or along grain boundaries. Although quenching from temperatures of ∼ 1450°C also showed no significant changes in the general microstructure or morphology of the Si₃N₄ grains, the amorphous intergranular film thickness increased substantially from an initial ∼ 1 nm in the slowly cooled material to 1.5–9 nm in the quenched materials. The variability of film thickness in a given material suggests a nonequilibrium state. Specimens quenched from 1550°C revealed once again thin (1-nm) intergranular films at all high-angle grain boundaries, indicating an equilibrium condition. The changes observed in intergranular-film thickness by high-resolution electron microscopy can be related to the eutectic temperature of the system and to diffusional and viscous processes occurring in the amorphous intergranular film during the high-temperature anneal prior to quenching.     

Surface Modification of Silicon Nitride Powder with Aluminum

Surface modification of Si₃N₄ with alumina was tried. It was achieved by simply mixing Si₃N₄ powder with an alumina sol up to ∼2 wt% as alumina in an aqueous medium, dried, and followed by calcination at 400°C for 1 h. A TEM micrograph showed a coating layer of ∼15 nm thickness. The isoelectric point of the modified Si₃N₄ powder with porous alumina was at pH 7.8, which is different from 5.8 and 8.6 for Si₃N₄ and amorphous alumina, respectively.     

Oxidation Behavior of Chemically-Vapor-Deposited Silicon Carbide and Silicon Nitride from 1200° to 1600°C

The isothermal oxidation of pure CVD SiC and Si₃N₄ has been studied for 100 h in dry, flowing oxygen from 1200° to 1600°C in an alumina tube furnace. Adherent oxide formed at temperatures to 1550°C. The major crystalline phase in the resulting silica scales was alpha-cristobalite. Parabolic rate constants for SiC were within an order of magnitude of literature values. The oxidation kinetics of Si₃N₄ in this study were not statistically different from that of SiC. Measured activation energies were 190 kJ/mol for SiC and 186 kJ/mol for Si₃N₄. Silicon oxynitride did not appear to play a role in the oxidation of Si₃N₄ under the conditions herein. This is thought to be derived from the presence of ppm levels of sodium impurities in the alumina furnace tube. It is proposed that sodium modifies the silicon oxynitride, rendering it ineffective as a diffusion barrier. Material recession as a function of oxide thickness was calculated and found to be low. Oxidation behavior at 1600°C differed from the lower temperatures in that silica spallation occurred after exposure.     

Strength of Silicon Nitride after Thermal Shock

A water-quenching technique was used to evaluate the thermal-shock strength behavior of silicon nitride (Si₃N₄) ceramics in an air atmosphere. When the tensile surface was shielded from air during the heating and soaking process, the quenched specimens showed a gradual decrease in strength at temperatures above 600°C. However, the specimens with the air-exposed surface exhibited a ∼16% and ∼29% increase in strength after quenching from 800° and 1000°C, respectively. This is because of the occurrence of surface oxidation, which may cause the healing of surface cracks and the generation of surface compressive stresses. As a result, some preoxidation of Si₃N₄ components before exposure to a thermal-shock environment is recommended in practical applications.     

Mechanical Properties of Joined Silicon Nitride

A technique is described to join Si₃N₄ ceramics using oxide glasses. The technique involves a glazing step, followed by a pressureless reaction treatment of 30 to 60 min at 1575° to 1650°C. Reactions between the glasses and Si3N4 are reported. Important events are dissolution of Si₃N₄ and the growth of Si₂N₂O crystals into the joint. The strength of joined bars depends on joint thickness. Two strength regimes are identified, and two corresponding fracture mechanisms are described. A maximum strength of ∼460 MPa is achieved for a joint thickness of ∼30 μm.     

Combustion Synthesis of Silicon Nitride-Silicon Carbide Composites

The feasibility of synthesizing silicon nitride-silicon carbide composites by self-propagating high-temperature reactions is demonstrated. Various mixtures of silicon, silicon nitride, and carbon powders were ignited under a nitrogen pressure of 30 atm (∼ 3 MPa), to produce a wide composition range of Si₃N₄-SiC powder products. Products containing up to 17 vol% of SiC, after being attrition milled, could be hot-pressed to full density under 1700°C, 3000 psi (∼ 21 MPa) with 4 wt% of Y₂O₃. The microhardness and fracture toughness of these composites were superior to those of the pure β-Si₃N₄ matrix material and compared very well with the properties of "traditionally" prepared composites.     

Bonding Mechanisms in Silicon Nitride Brazing

We investigated the wetting behavior and reactions of different metals on Si₃N₄ using sessile drop measurements, analysis of reaction layers, and measurements of strengths of joined bars. Active metals, such as Al and Ti, and alloys that contain them react with Si₃N₄ and cause wetting and spreading at the interface. Al-Si₃N₄ reaction at 900°C produced a thin layer of Al₂O₃ at the interface. Reaction between Si₃N₄ and Ag-Cu-To braze alloys at 900°C resulted in a complex microstructure in the reaction zone that contained TiN and titanium silicides. Breaking strengths of Si₃N₄ bars joined with the Ag-Cu-Ti braze alloys were higher than those for Si₃N₄ joined with Al, primarily because of the better wetting by the Ag-Cu-Ti alloys. Nonreactive metals and alloys such as Sn, In, Ag-Cu, and Ag-Cu-Sn neither wet, spread, nor adhere to Si₃N₄ substrates.     

Burner Rig Hot Corrosion of Silicon Carbide and Silicon Nitride

A number of commercially available SiC and Si₃N₄ materials were exposed to 1000°C for 40 h in a high-velocity, pressurized burner rig as a simulation of an aircraft turbine environment. Na impurities (2 ppm) added to the burner flame resulted in molten Na₂SO₄ deposition, attack of the SiC and Si₃N₄, and formation of substantial Na₂O. x (SiO₂) corrosion product. Room-temperature strength of the materials decreased as a result of the formation of corrosion pits in SiC and grain-boundary dissolution and pitting in Si₃N₄.     

In Situ Synthesis and Microstructures of Tungsten Carbide-Nanoparticle-Reinforced Silicon Nitride-Matrix Composites

A W₂C-nanoparticle-reinforced Si₃N₄-matrix composite was fabricated by sintering porous Si₃N₄ that had been infiltrated with a tungsten solution. During the sintering procedure, nanometer-sized W₂C particles grew in situ from the reaction between the tungsten and carbon sources considered to originate mainly from residual binder. The W₂C particles resided in the grain-boundary junctions of the Si₃N₄, had an average diameter of ∼60 nm, and were polyhedral in shape. Because the residual carbon, which normally would obstruct sintering, reacted with the tungsten to form W₂C particles in the composite, the sinterability of the Si₃N₄ was improved, and a W₂C–Si₃N₄ composite with almost full density was obtained. The flexural strength of the W₂C–Si₃N₄ composite was 1212 MPa, ∼34% higher than that of standard sintered Si₃N₄.     

Silicon Nitride/Silicon Carbide Nanocomposite Materials: II, Hot Strength, Creep, and Oxidation Resistance

The mechanical properties of Si₃N₄/SiC nanocomposite materials that contained nanosized intercrystalline SiC dispersions that originated from different starting powders and were made via different fabrication routes were studied in the temperature range of 1400°-1550°C. The strength retained at 1400°C was between 70% and ∼100% of the room-temperature strength. Both creep and oxidation resistance were very high and were comparable to or better than those of the best Si₃N₄-based materials published previously. The effect of SiC particles on the creep properties can be understood in terms of a recent model of dilatational creep; however, the model invokes a series of microstructural, micromechanical, and chemical modifications.     

In Situ Polysilane-Derived Silicon Carbide Particulates Dispersed in Silicon Nitride Composite

A dense (97% of theoretical density) Si₃N₄—SiC composite containing 10 wt%β-SiC was prepared by introducing a SiC phase by the pyrolysis of a polymeric SiC precursor. The composite material was produced by mixing an alkyl/aryl-substituted polysilane with Si₃N₄ powder and, by subsequently forming green compacts, pyrolyzing the polymeric species, and finally sintering the sample. Synthesis and characterization of the polymeric compound was described. Its transformation reactions to SiC and the characterization of the ceramic residue were also studied. High ceramic yields were obtained by curing the as-synthesized polysilane at 500°C in an Ar atmosphere. The heat treatment had no effect on the good solubility of the polymeric precursor in organic solvents. This was important for processes such as infiltration, sealing, and coating and for the mixing of the polymer with powders for the preparation of homogeneous composite ceramics. The dense microstructure of the pyrolyzed and sintered Si₃N₄ powder–polysilane mixture exhibited reduced grain growth of the Si₃N₄ particles and a very homogeneous distribution of the in situ-formed β-SiC phase.     

Seamless Joining of Silicon Nitride Ceramics

High-strength joining of Si₃N₄ ceramics has been achieved by developing a process that effectively eliminates the seam, and may allow for fabrication of large or complex silicon nitride bodies. This approach to joining is based on the concept that when sintering aids are effective in bonding individual grains, they could be equally effective in joining bulk pieces of Si₃N₄. Optimization of the process led to Si₃N₄/Si₃N₄ joints with room-temperature bend strengths as high as 950 MPa, corresponding to more than 90% of the bulk strength of the Si₃N₄. At elevated temperatures of 1000° and 1200°C joint strengths of 666 and 330 MPa, respectively, were obtained, which are the highest values reported to date for these temperatures. These bend strengths are also more that 90% of the strength of bulk Si₃N₄ measured at these temperatures.     

Active-to-Passive Transition in the Oxidation of Silicon Carbide and Silicon Nitride in Air

The active-to-passive transition in the oxidation of SiC and Si₃N₄ was determined in a flowing air environment as a function of temperature and total pressure. The experimentally observed transition temperatures ranged from a low of 1347°C to a high of 1543°C for partial pressures of oxygen of 2.5 and 123.2 Pa, respectively. The SiC and Si₃N₄ samples had approximately the same transition point for a given pressure. In general, the higher the flow rate, the higher the transition temperature for a given pressure. The transitions for SiC measured in this study agree with previous data for the transition of SiC measured in pure oxygen at reduced pressures and in oxygen inert gas mixtures.     

Chemical-Vapor-Infiltrated Silicon Nitride, Boron Nitride, and Silicon Carbide Matrix Composites

Composites of carbon/chemical-vapor-deposited (CVD) Si₃N₄, carbon/CVD BN, mullite/CVD SiC, and SiC yarn/CVD SiC were prepared to determine if there were inherent toughness in these systems. The matrices were deposited at high enough temperatures to ensure that they were crystalline, which should make them more stable at high temperatures. The fiber-matrix bonding in the C/Si₃N₄ composite appeared to be too strong; the layers of BN in the matrix of the C/BN were too weakly bonded; and the mullite/SiC composite was not as tough as the SiC/SiC composites. Only the SiC yarn/CVD SiC composite exhibited both strength and toughness.