考虑孔隙和微裂纹缺陷的C/C-SiC编织复合材料等效模量计算

通过观察C/C-SiC复合材料组元分布的扫描电子显微镜(SEM)照片 , 获得了C/C-SiC复合材料化学气相渗透(CVI)制备过程中产生孔隙和微裂纹的几何信息。在此基础上 , 建立了包含孔隙和微裂纹的C/C-SiC微结构有限元模型 , 并利用均匀化等效计算方法预测了平纹编织C/C-SiC复合材料的模量。针对CVI沉积方式制备的2组不同的C/C-SiC复合材料 , 实验测试与等效计算结果表明 : 基于 SEM照片建立的C/C-SiC纤维束和复合材料微结构有限元模型 , 能够反映CVI工艺制备C/C-SiC中孔隙和微裂纹的分布状况; 计算结果与实验数据有良好的一致性 , 数值计算可有效预测C/C-SiC编织复合材料的模量。      

Microstructural Modeling and Multiscale Mechanical Properties Analysis of Cancellous Bone

This paper is devoted to the microstructure geometric modeling and mechanical properties computation of cancellous bone. The microstructure of the cancellous bone determines its mechanical properties and a precise geometric modeling of this structure is important to predict the material properties. Based on the microscopic observation, a new microstructural unit cell model is established by introducing the Schwarz surface in this paper. And this model is very close to the real microstructure and satisfies the main biological characteristics of cancellous bone. By using the unit cell model, the multiscale analysis method is newly applied to predict the mechanical properties of cancellous bone. The effective stiffness parameters are calculated by the up-scaling multi-scale analysis. And the distribution of microscopic stress in cancellous bone is determined through the down-scaling procedure. In addition, the effect of porosity on the stiffness parameters is also investigated. The predictive mechanical properties are in good agreement with the available experimental results, which verifies the applicability of the proposed unit cell model and the validness of the multiscale analysis method to predict the mechanical properties of cancellous bone.     

A computational library for multiscale modeling of material failure

We present an open-source software framework called PERMIX for multiscale modeling and simulation of fracture in solids. The framework is an object oriented open-source effort written primarily in Fortran 2003 standard with Fortran/C++ interfaces to a number of other libraries such as LAMMPS, ABAQUS, LS-DYNA and GMSH. Fracture on the continuum level is modeled by the extended finite element method (XFEM). Using several novel or state of the art methods, the piece software handles semi-concurrent multiscale methods as well as concurrent multiscale methods for fracture, coupling two continuum domains or atomistic domains to continuum domains, respectively. The efficiency of our open-source software is shown through several simulations including a 3D crack modeling in clay nanocomposites, a semi-concurrent FE-FE coupling, a 3D Arlequin multiscale example and an MD-XFEM coupling for dynamic crack propagation.     

CVI-GSI工艺制备C/C-SiC复合材料的组成结构与力学性能

采用密度为1.0g/cm~3的C/C素坯,联合化学气相渗透(CVI)和气相渗硅(GSI)2种工艺制备C/C-SiC复合材料,研究CVI C/C-SiC复合材料中间体的密度对CVI-GSI C/C-SiC复合材料物相组成、微观结构及力学性能的影响。结果表明:随着CVI C/C-SiC复合材料中间体密度的增大,CVI-GSI C/C-SiC复合材料C含量增多,残余Si含量减少,SiC含量先增多后减少,CVI-GSI C/C-SiC复合材料的密度先增大后减小;随着CVI C/C-SiC复合材料中间体的密度由1.27g/cm~3增加到1.63g/cm~3时,得到的CVI-GSI C/C-SiC复合材料的力学性能先升高后降低。当CVI C/C-SiC复合材料密度为1.42g/cm~3时,制得的CVI-GSI C/C-SiC复合材料力学性能最好,其弯曲强度为247.50MPa,弯曲模量为25.63GPa,断裂韧度为10.08MPa·m~(1/2)。     

Growth of 3C-SiC on Si(111) using the four-step non-cooling process

A modified four-step method was applied to grow a 3C-SiC thin film of high quality on the off-axis 1.5° Si(111) substrate in a mixed gas of C₃H₈, SiH₄ and H₂ using low pressure chemical vapor deposition. The modified four-step method adds a diffusion step after the carburization step and removes the cooling from the traditional three-step method (clean, carburization, and growth). The X-ray intensity of the 3C-SiC(111) peak is enhanced from 5 × 10⁴ counts/s (the modified three steps) to 1.1 × 10⁵ counts/s (the modified four steps). The better crystal quality of 3C-SiC is confirmed by the X-ray rocking curves of 3C-SiC(111). 3C-SiC is epitaxially grown on Si(111) supported by the selected area electron diffraction patterns taken at the 3C-SiC/Si(111) interface. Some {111} stacking faults and twins appear inside the 3C-SiC, which may result from the stress induced in the 3C-SiC thin film due to lattice mismatch. The diffusion step plays roles in enhancing the formation of Si-C bonds and in reducing the void density at the 3C-SiC/Si(111) interface.     

短纤维增强C/C-SiC复合材料的微观结构与力学性能EI北大核心CSCD

综合原料的热物理性能分析和配比设计,实现了C/C复合材料载体孔隙体积的精细控制,采用热压-熔渗两步法在低温条件下制备了具有高致密、低残余Si含量特征的短碳纤维增强C/C-SiC复合材料。系统解析了C/C-SiC复合材料成型过程中的结构演变行为,研究了短纤维增强C/C-SiC复合材料的力学性能和失效机制。结果表明:多孔C/C复合材料载体孔隙的孔径呈双极分布特征,添加芳纶纤维可提高网络孔隙结构的连通性,具有显著的孔隙结构调控作用。SiC基体以网络骨架形态分布于C/C-SiC复合材料内部,与纤维束形成了强界面结合钉扎结构,高含量纤维协同作用下使C/C-SiC复合材料具有优异的综合力学性能,添加芳纶纤维可明显增加复合材料内部裂纹扩展路径,提高C/C-SiC复合材料的断裂韧性。碳纤维的面内各向同性分布及陶瓷相层间均匀分布对C/C-SiC复合材料承载、摩擦稳定性提升均具有积极作用。     

添加Al对MSI制备C/C-SiC复合材料组织和力学性能的影响

以聚丙烯腈( PAN) 基炭纤维(Cf ) 针刺整体毡为预制体, 用化学气相渗透(CVI) 法制备炭纤维增强炭基体(C/ C) 的多孔坯体, 采用熔融渗硅(MSI) 法制备C/ C-SiC 复合材料, 研究了渗剂中添加Al 对复合材料组织结构和力学性能的影响。结果表明: C/ C 坯体反应溶渗硅后复合材料的物相组成为SiC 相、C 相及残留Si 相。随着渗剂中Al 量的增加, 材料组成相中的Al 相也增加而其它相减少; SiC 主要分布在炭纤维周围, 残留Si 相分布在远离炭纤维处, 而此处几乎不含Al ; 当渗剂中Al 量由0 增加到10 %时, 复合材料的抗弯强度由116. 7 MPa 增加到175. 4 MPa , 提高了50. 3 % , 断裂韧性由5. 8 MPa·m1/2增加到8. 6 MPa·m1/2 , 提高了48. 2 %。Al 相的存在使复合材料基体出现韧性断裂的特征。      

液硅渗透法制备SiBC改性C/CSiC复合材料

为了降低液硅渗透法制备C/C-SiC复合材料中残留Si的含量, 采用浆料浸渗结合液硅渗透工艺制备B₁₂(C, Si, B)₃改性C/C-SiC复合材料。通过分析不同比例B₄C-Si体系在不同温度的反应产物, 确定了B₁₂(C, Si, B)₃的生成条件。结果表明: B₄C和Si在1300℃开始反应, 生成少量B₁₂(C, Si, B)₃和SiC, 且B₁₂(C, Si, B)₃的生成量随反应温度的升高而增加; 当B₄C和Si的摩尔比为3:1、 反应温度为1500℃ 时, 产物为B₁₂(C, Si, B)₃和SiC; 液硅渗透法制备的C/C-SiC复合材料相组成为非晶态C、 β-SiC和B₁₂(C, Si, B)₃, 未见残留Si。     

A Modeling Approach Across Length Scales for Progressive Failure Analysis of Woven Composites

This paper presents a multiscale modeling approach for the progressive failure analysis of carbon-fiber-reinforced woven composite materials. Hierarchical models of woven composites at three different length scales (micro, meso, and macro) were developed according to their unique geometrical and material characteristics. A novel strategy of two-way information transfer is developed for the multiscale analysis of woven composites. In this strategy, the macroscopic effective material properties are obtained from property homogenizations at micro and meso scales and the stresses at three length scales are computed with stress amplification method from macroscale to microscale. By means of the two-way information transfer, the micro, meso and macro structural characterizations of composites are carried out so that the micromechanisms of damage and their interactions are successfully investigated in a single macro model. In addition, both the nucleation and growth of damages are tracked during the progressive failure analysis. A continuum damage mechanics (CDM) method is used for post-failure modeling. The material stiffness, tensile strength and damage patterns of an open-hole woven composite laminate are predicted with the proposed multiscale method. The predictions are in good agreement with the experimental results.     

Sublimation epitaxy of 3C-SiC grown at Si- and C-rich conditions

3C-SiC layers have been grown by using sublimation epitaxy at a source temperature of 2000 °C, under vacuum conditions (<10⁻⁵ mbar) on well oriented (on-axis) 6H-SiC (0001) substrates. Close space sublimation growth geometry has been used in a RF-heated furnace employing high-purity graphite crucible with a possibility to change the growth environment from Si vapor-rich to C vapor-rich. The optical microscopy in transmission mode reveals continuous 3C-domains for 3C-SiC with less than 0.4% 6H-inclusions for the layer grown at Si-rich conditions, and separate 3C-SiC domains for the layer grown at C-rich conditions. The type of 6H-inclusions for layers with continuous domain structure investigated by Atomic Force Microscopy (AFM) is discussed. 2Theta-omega scan shows 0006 and 111 peaks coming from the substrate and the layer, respectively with a higher intensity of the 111 peak for 3C-SiC grown at Si-rich conditions which is related with the continuous character of the 3C-SiC domains.     

Study on the growth of heteroepitaxial cubic silicon carbide layers in atmospheric-pressure H2-based plasma

The heteroepitaxial growths of cubic silicon carbide (3C-SiC) layers on Si(001) substrates are studied at a temperature of 800 degrees C in atmospheric-pressure (AP) plasma excited by a 150 MHz, very high-frequency (VHF) power using a porous carbon electrode. The effect of a very large C/Si ratio (-400) of the source molecules on the improvement of crystallinity of the resultant SiC layer is mainly investigated. For this purpose, we utilize the chemical transport of Si induced by AP H2/CH4 plasma instead of using SiH4 as the Si source. The layer crystallinity is characterized using reflection high-energy electron diffraction, transmission electron microscopy and infrared absorption spectroscopy. The results show that the SiC layer exhibits the (001) 3C-SiC growth aligned to the Si matrix epitaxially. Although the SiC layer contains a high density of defects originating presumably from anti-phase boundaries and twin boundaries, the layer crystallinity has been considerably improved in comparison with that of the layer grown with C/Si = 10. It is also demonstrated that the moderate dilution of H2 with He leads to a further improvement of the layer crystallinity.     

Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate

The idea of a new method for growing gallium nitride (GaN) epilayers in semi-polar direction by hydride-chloride vapor-phase epitaxy (HVPE) is disclosed. We propose to use Si(210) substrates with the first buffer layer of silicon carbide (3C-SiC) and the second buffer layer of aluminum nitride (AlN). It is experimentally demonstrated for the first time that, under conditions of anisotropic deformation in the GaN/AlN/3C-SiC/Si(210) structure, a GaN epilayer exhibits growth in semi-polar directions.     

Analysis of space mapping algorithms for application to partitioned fluid–structure interaction problems

Fluid–structure interactions (FSI) play a crucial role in many engineering fields. However, the computational cost associated with high‐fidelity aeroelastic models currently precludes their direct use in industry, especially for strong interactions. The strongly coupled segregated problem—that results from domain partitioning—can be interpreted as an optimization problem of a fluid–structure interface residual. Multi‐fidelity optimization techniques can therefore directly be applied to this problem in order to obtain the solution efficiently. In previous work, it is already shown that aggressive space mapping (ASM) can be used in this context. In this contribution, we extend the research towards the use of space mapping for FSI simulations. We investigate the performance of two other approaches, generalized space mapping and output space mapping, by application to both compressible and incompressible 2D problems. Moreover, an analysis of the influence of the applied low‐fidelity model on the achievable speedup is presented. The results indicate that output space mapping is a viable alternative to ASM when applied in the context of solver coupling for partitioned FSI, showing similar performance as ASM and resulting in reductions in computational cost up to 50% with respect to the reference quasi‐Newton method. Copyright © 2015 John Wiley & Sons, Ltd.     

C/C-SiC缎纹编织复合材料孔隙缺陷的建模及其拉伸性能仿真

主要研究了随机孔隙缺陷在C/C-SiC缎纹编织复合材料中的有限元建模方法及其对拉伸性能的影响。基于C/C-SiC缎纹编织复合材料的细观结构和实验观察所得的微观形貌,得出孔隙缺陷具有随机分布特征,提出了一种三维随机碰撞算法模拟孔隙在复合材料中的分布,建立了含随机孔隙缺陷的C/C-SiC缎纹编织复合材料的有限元模型。采用有限元软件ABAQUS模拟了其在拉伸载荷下的力学行为,讨论了孔隙缺陷的尺寸和分布形式对材料拉伸性能的影响,并对试样进行了单轴拉伸实验测试,验证了数值模拟的有效性。结果表明,用本文方法建立的有限元模型符合含孔隙缺陷C/C-SiC缎纹编织复合材料的真实细观结构,相应的数值模拟结果也与试验数据吻合较好。本文的研究结果为含孔隙缺陷的缎纹编织复合材料及具有相似结构特征的复合材料的力学分析与优化设计提供了一种有效的方法。      

Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition

Epitaxial 3C-SiC(1 1 1) films were grown on 6H-SiC(0 0 0 1) Si face on axis substrates by chemical vapor deposition under H₂, SiH₄ and C₃H₈ in a cold wall vertical reactor. Two temperatures were studied (1450 and 1700 °C) with various C/Si ratio and deposition time. It was found that under conditions giving high lateral growth (low C/Si and/or high temperature), homoepitaxial growth occurred even at temperatures as low as 1450 °C. For other conditions, the 3C-SiC polytype was detected and always together with the formation of double positioning boundaries whose density was found to depend on the growth conditions but not on the initial surface reconstruction. Single domain enlargement was observed when growth was performed at 1700 °C over a nucleation layer grown at 1450 °C.     

三维离散元与壳体有限元耦合的时空多尺度方法

壳体结构的局部失效及其对整体结构稳定性影响涉及到跨宏细观多尺度力学问题。该文推导出元/网格动量传递的多尺度算法,建立了三维离散元与壳体有限元耦合的时空多尺度数值计算方法。通过激光辐照下充内压圆柱壳局部失效算例的数值模拟,验证该多尺度方法能够完善地并行实现时间多尺度与空间多尺度计算,不仅能够准确模拟壳体结构局部细观非均匀演化及其对整体结构的影响,而且计算时间很少,有效地发挥了时空多尺度模拟高效率优势。     

三维机织C/C-SiC复合材料弹性性能预测

试验研究了三维机织C/C-SiC复合材料的弹性性能, 基于复合材料的扫描电镜(SEM)照片, 分析了材料的细观结构的特点, 并提出了一系列的假设, 建立了三维机织C/C-SiC复合材料的细观力学模型, 利用均匀化方法预测了复合材料的弹性常数, 分析了材料的弹性性能随经纱倾斜角的变化规律。结果表明: 预测结果与试验结果吻合较好, 表明该预测模型和方法的正确性; 随着经纱倾斜角的增加, 经纱方向的弹性模量降低, 其它方向的弹性模量均增大, 但面内剪切模量和厚度方向的弹性模量增幅很小。      

C/C-SiC复合材料高温防护研究进展

C/C-SiC复合材料具有高比强度、高比模量、高热导率、低热膨胀系数和优异的高温抗氧化性能等特点,是新一代的耐高温陶瓷基复合材料,已经被广泛地用作热结构和热防护材料、制动材料以及空间光学系统零部件等。近年来,随着高超声速飞行器和返回式航天运输工具的快速发展,飞行器面临着更多的有高热流、高压气流以及高速粒子冲蚀的环境,这对C/C-SiC复合材料的高温防护技术提出了更高的要求。C/C-SiC复合材料高温防护的研究主要集中在纤维涂层改性、基体改性和高温防护涂层等3个方面,综合近几年国内外的研究报道,从上述3个方面综述了C/C-SiC复合材料高温防护技术的研究进展,总结了各种高温防护技术的制备方法,比较了3种高温防护技术的特点,最后对C/C-SiC复合材料高温防护技术的发展趋势提出了一些见解。