Structural investigation of nanocrystalline diamond/amorphous carbon composite films

Nanocrystalline diamond/amorphous carbon (NCD/a-C) composite films have been prepared by microwave plasma chemical vapor deposition (MWCVD) from methane/nitrogen mixtures. The complex nature of the coatings required the application of a variety of complementary analytical techniques in order to elucidate their structure. The crystallinity of the samples was studied by selected-area electron diffraction (SAED). The diffraction patterns revealed the presence of diamond crystallites within the films. From the images taken by transmission electron microscopy (TEM) the crystallite size was determined to be on the order of 3–5 nm. The results were confirmed by X-ray diffraction (XRD) measurements exhibiting broad (111) and (220) peaks of diamond from which the average size of the crystallites was calculated. The grain boundary width is 1–1.5 nm as observed by TEM images which corresponds to a matrix volume fraction of about 40–50%. This correlates very well with the crystalline phase content of about 50% in the films estimated from their density (2.75 g/cm³ as determined by X-ray reflectivity). The bonding structure of the composite films was studied by electron energy loss spectroscopy (EELS) in the region of carbon core level. The spectra were dominated by a peak at 292 eV indicating the diamond nature of the investigated films. In addition, the spectra of NCD/a-C films possessed a shoulder at 284 eV due to the presence of a small sp² bonded fraction. This phase was identified also by X-ray photoelectron spectroscopy (XPS). The sp²/sp³ ratio was on the order of 10% as determined by deconvolution of the C1s XPS peak.     

Detecting sp2 phase on diamond surfaces by atomic force microscopy phase imaging and its effects on surface conductivity

We show correlation of microscopic surface quality and morphology of nanocrystalline diamond films as a function of deposition temperature and post-growth acid treatment detected by atomic force microscopy in phase detection regime, X-ray photoelectron spectroscopy, X-ray induced Auger electron spectroscopy, Scanning Electron Microscopy, Raman spectroscopy, and the electrical conductivity of H-terminated diamond surfaces. The correlation reflects the decrease in sp² amount and enhanced surface conductivity of the diamond surface after the chemical treatment. These results indicate that the AFM phase can detect clearly and microscopically carbon sp² phase on facets and grain boundaries of nanocrystalline diamond films.     

Bias enhanced diamond nucleation onto 3C–SiC(100) surfaces studied by high resolution X-ray photoelectron and high resolution electron energy loss spectroscopies

The nature of hydrogen and carbon bonding configuration formed onto 3C–SiC(100) surfaces by the diamond bias enhanced nucleation process consisting of stabilization and biasing stages were investigated by high resolution electron energy loss spectroscopy and high resolution X-ray photoelectron spectroscopy. During the stabilization stage a sp³-CH_x bonded carbonaceous mono-layer is formed onto a hydrogenated 3C–SiC(100)–C–H terminated surfaces. After the biasing stage a hydrogenated nano-diamond film is formed. It was determined that hydrogen is strongly bonded to these nano-diamond surfaces and boundaries in sp³-C–H and sp²-C–H mono-hydride configuration. In addition, CH_x (x > 1) weakly bonded surface or sub-surface species were detected. Regions which are not fully covered by the nano-diamond film expose the SiC surface covered with a very thin carbonaceous layer.     

Biased enhanced growth of nanocrystalline diamond films by microwave plasma chemical vapor deposition

Smooth nanocrystalline diamond thin films with rms surface roughness of ∼17 nm were grown on silicon substrates at 600°C using biased enhanced growth (BEG) in microwave plasma chemical vapor deposition (MPCVD). The evidence of nanocrystallinity, smoothness and purity was obtained by characterizing the samples with a combination of Raman spectroscopy, X-ray diffraction (XRD), atomic force microscopy and Auger electron spectroscopy. The Raman spectra of the films exhibit an intense band near 1150 cm⁻¹ along with graphitic bands. The former Raman band indicates the presence of nanocrystalline diamond. XRD patterns of the films show broad peaks corresponding to inter-planar spacing of (111) and (220) planes of cubic diamond supporting the Raman results. Auger line shapes closely match with the line shape of diamond suggesting high concentration of sp³ carbon on the surfaces of the films. The growth of dominantly sp³ carbon by BEG in the MPCVD system at the conditions used in the present work can be explained by the subsurface implantation mechanism while considering some additional effects from the high concentration of atomic hydrogen in the system.     

Influence of bias voltage on diamond like carbon (DLC) film deposited on polyethylene terephthalate (PET) film surfaces using PECVD and its blood compatibility

In this paper, diamond like carbon (DLC) films were coated on polyethylene terephthalate (PET) film substrate as a function of biasing voltage using plasma enhanced chemical vapour deposition. The surface morphology of the DLC films was analyzed by scanning electron microscopy and atomic force microscopy. The chemical state and structure of the films were analyzed by X-ray photoelectrons spectroscopy and Raman spectroscopy. The micro hardness of the DLC films was also studied. The surface energy of interfacial tension between the DLC and blood protein was investigated using contact angle measurements. In addition, the blood compatibility of the films was examined by in vitro tests. For a higher fraction of sp³ content, maximum hardness and surface smoothness of the DLC films were obtained at an optimized biasing potential of ? 300 V. The in vitro results showed that the blood compatibility of the DLC coated PET film surfaces got enhanced significantly.     

XPS studies of amorphous SiCN thin films prepared by nitrogen ion-assisted pulsed-laser deposition of SiC target

Amorphous SiCN films were prepared on Si (100) substrates by nitrogen ion-assisted pulsed-laser ablation of an SiC target. The dependence of the formed chemical bonds in the films on nitrogen ion energy and the substrate temperature was investigated by an X-ray photoelectron spectroscopy (XPS). The fractions of sp² CC, sp³ CC, and sp² CN bonds decreased, and that of NSi bonds increased when the nitrogen ion energy was increased without heating during the film preparation. The fraction of sp³ CN bonds was not changed by the nitrogen ion irradiation below 200 eV. Si atoms displaced carbon atoms in the films and the sp³ bonding network was made between carbon and silicon through nitrogen. This tendency was remarkable in the films prepared under substrate heating, and the fraction of sp³ CN bonds also decreased when the nitrogen ion energy was increased. Under the impact of high-energy ions or substrate heating, the films consisted of sp² CC bonds and SiN bonds, and the formation of sp³ CN bonds was difficult.     

Vibrational studies of microcrystalline diamond and diamond-like carbon by high resolution electron energy loss spectroscopy

High resolution electron energy loss spectroscopy (HREELS) has been applied to investigate the vibrational states of microcrystalline diamond and diamond-like carbon (DLC) films prepared in a low pressure inductively coupled plasma. The CO additive to a CH₄/H₂ plasma exhibits different phonon density of states. Without CO additive, the HREELS spectrum shows a faint peak at ∼1500 cm⁻¹ due to CC stretching vibration of sp² bonds, indicating that the sample is mainly composed of DLC. On the other hand, the HREELS profiles show a peak at ∼1100 cm⁻¹ assigned to CC stretching vibration of sp³ sites with CO additive. The intensity of the peak becomes strong and a shoulder centered at ∼700 cm⁻¹ corresponding to the bending vibration of sp³ bonded carbons appears with increasing CO additive. It consequently implies that the CO additive brings about the decrease of the fraction of sp² bonded carbons in the resultant films, and it is qualitatively in agreement with the previous characterizations by Raman spectroscopy, transmission electron microscopy, and reflection high energy electron diffraction.     

Hydrogen incorporation,bonding and stability in nanocrystalline diamond films

The hydrogen concentration in hot filament and microwave plasma CVD nanocrystalline diamond films is analysed by secondary ion mass spectrometry and compared to the film grain size. The surface and bulk film carbon bonds are analysed respectively by X-ray photoelectron spectroscopy (XPS) and ultra-violet Raman spectroscopy. XPS results show the presence of the hydrogenated p-type surface conductive layer. The respective intensities of the 1332 cm^− 1 diamond peak, of the G and D bands related to sp² phases, and of the 3000 cm^− 1 CH_x stretching mode band, are compared on Raman spectra. The samples are submitted to thermal annealing under ultra-high vacuum in order to get hydrogen out-diffusion. XPS analysis shows the surface desorption of hydrogen. Thermal annealing modifies the sp² phase structure as hydrogen out diffuses.     

Growth of highly oriented graphite films at room temperature by pulsed laser deposition using carbon-sulfur targets

Carbon-sulfur films were grown by pulsed laser deposition at room temperature using different graphite-sulfur mixtures as targets. The structure of the films was characterized by X-ray diffraction and transmission electron microscopy. The composition and the chemical bonds were analyzed by Rutherford-backscattering spectroscopy, X-ray photoelectron spectroscopy and energy dispersive X-ray analysis. The films were composed of amorphous carbon with sp²-, sp³- and S-C-C-S bonds and textured graphite on the top of the film. The thin graphite layer on top of the carbon-sulfur films is highly oriented, comparable to highly oriented pyrolytic graphite, and free of sulfur in the graphite lattice. The lateral size of the oriented graphite grains in the films was up to 8 μm. Magnetic measurements reveal that the films prepared under the conditions of our study show neither magnetic ordering nor superconductivity in the studied temperature range T > 2 K.     

Grain size dependent mechanical properties of nanocrystalline diamond films grown by hot-filament CVD

Nanocrystalline diamond (NCD) films with a thickness of ~ 6 µm and average grain sizes ranging from 60 to 9 nm were deposited on silicon wafers using a hot-filament chemical vapor deposition (HFCVD) process. These samples were then characterized in order to identify correlations between grain size, chemical composition and mechanical properties. The characterization reveals that our films are phase pure and exhibit a relatively smooth surface morphology. The levels of sp²-bonded carbon and hydrogen impurities are low, showing a systematic variation with the grain size. The hydrogen content increases with decreasing grain size, whereas the sp² carbon content decreases with decreasing grain size. The material is weaker than single crystalline diamond, since both stiffness and hardness decrease with the reduction in crystal size. These trends suggest gradual changes in the nature of the grain boundaries, from graphitic in case of 60 nm grain size material to hydrogen terminated sp³ carbon in 9 nm grain size material. The films exhibit low levels of internal stress and free-standing structures with a length of several centimeters could be fabricated without noticeable bending     

The carbon nitride films prepared at various substrate temperatures by vacuum cathodic arc method

Carbon nitride films have been grown by vacuum cathodic arc method in the substrate temperature range of 100–500 °C. The bonding structure of the films was investigated by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and infrared (IR) spectroscopy. With increasing substrate temperature, the films indicate various characteristics. At 100 °C, it can be described as a network similar to DLC in which aromatic sp²C phase is cross-linked by sp³C phase. Between 200 and 400 °C, with increasing substrate temperature the films become graphitized and the sp²CN phase increases, meanwhile the non-aromatic sp²CN phase appears at the edges of aromatic clusters in planar position as well as in out-of-planar regions. While at 500 °C the non-aromatic sp²CN phase almost comes to the same level as the aromatic sp²CN phase. So in the network of the film the aromatic sp²C phase is cross-linked by the non-aromatic sp²C phase. Based on the variation of the microstructure of the films, a comprehensive assignment pattern for the XPS C1s and N1s at different substrate temperature is proposed. In addition, the interpretation of p electron band in valence band spectra at various substrate temperatures is also discussed.     

Sp3/sp2 character of the carbon and hydrogen configuration in micro- and nanocrystalline diamond

Hot filament and microwave plasma CVD micro- nanocrystalline diamond films are analysed by visible and ultra-violet excitation source Raman spectroscopy. The sample grain size varies from 20 nm to 2 μm. The hydrogen concentration in samples is measured by SIMS and compared to the grain size, and to the ratio of sp² carbon bonds determined by Raman spectroscopy from the 1332 cm^− 1 diamond peak and the sp² 1550 cm^− 1 G band. Hydrogen concentration appears to be proportional to the sp² bonds ratio. The 3000 cm^− 1 CH_x stretching mode band intensity observed on the Raman spectra is decreasing with the G band intensity. Thermal annealing modifies the sp² phase structure and concentration, as hydrogen outdiffuses.     

Microstructure of c-BN thin films deposited on diamond films

Diamond films were used as substrates for cubic boron nitride (c-BN) thin film deposition. The c-BN films were deposited by ion beam assisted deposition (IBAD) using a mixture of nitrogen and argon ions on diamond films. The diamond films exhibiting different values of surface roughness ranging from 16 to 200 nm (in R_rms) were deposited on Si substrates by plasma enhanced chemical vapor deposition. The microstructure of these c-BN films has been studied using in situ reflexion electron energy loss spectroscopy analyses at different primary energy values, Fourier transform infrared spectroscopy and high resolution transmission microscopy. The fraction of cubic phase in the c-BN films was depending on the roughness of the diamond surface. It was optimized in the case of the smooth surface presenting no particular geometrical effect for the incoming energetic nitrogen and argon ions during the deposition. The films showed a nanocrystalline cubic structure with columnar grains while the near surface region was sp² bonded. The films exhibit the commonly observed layered structure of c-BN films, that is, a well textured c-BN volume lying on a h-BN basal layer with the (00.2) planes perpendicular to the substrate. The formation mechanism of c-BN films by IBAD, still involving a h-BN basal sublayer, does not depend on the substrate nature.     

Bacterial adhesion on silicon-doped diamond-like carbon films

In this paper the surface properties of silicon-doped diamond-like carbon films with various Si contents on 316 stainless steel substrate by a magnetron sputtering technique were investigated. X-ray photoelectron spectroscopy was applied to determine the surface chemical composition of the films. Atomic force microscopy was used for the determination of surface roughness and topography. The sp² contents in the films were determined with Auger electron spectroscopy, which were 67.1%, 34.2% and 25.0% for silicon contents 1%, 2% and 3.8%. The sp³/sp² ratio increases with increasing the silicon contents in the films. Contact angles of three test liquids on the films were obtained with a Dataphysics OCA-20 contact angle analyzer. Surface free energies of the films and their dispersive and polar components were calculated using van Oss acid–base approach. Staphylococcus aureus was used for bacterial adhesion test. The experimental results showed that bacterial adhesion decreased with increasing the silicon content or with increasing sp³/sp² ratio in the films.     

Tribological investigation of nanocrystalline diamond films at low load under different tribosystems

The mechanical and frictional properties of hydrogen- and oxygen-terminated nanocrystalline diamond films (NCD) grown by hot-filament chemical vapor deposition (HFCVD) have been investigated in the present work.The structure and morphology of the NCD films have been characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD) and Raman-effect spectroscopy. In addition, X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) have been used to investigate the surface chemical groups on the NCD surface. Mechanical and frictional properties are determined using atomic force microscopy (AFM), nano-indentation, nano-scratching and micro-tribometer. The friction behavior of these films in the load range of 25 to 200 mN under reciprocating sliding conditions, using steel counter-body material has been thoroughly studied.It is noted that these films are highly crystalline with nanometer size grains and contain a very high fraction of sp³ carbon bonds. They exhibit high hardness and high elastic modulus. The friction coefficient of the film is lower under unidirectional scratch with diamond indenter than the friction coefficient under low load reciprocating sliding against steel ball. Transfer of the film from the counter-body, oxidation of transfer film and mixing of transfer film with carbonaceous layer on the worn surfaces are responsible for such behavior. Although, the friction responses of H-terminated and O-terminated films are similar under unidirectional scratch with diamond indenter, the friction coefficient of O-terminated film is always higher than the friction coefficient of H-terminated film under reciprocating sliding condition against steel counter-body material.     

Characteristics and surface energy of silicon-doped diamond-like carbon films fabricated by plasma immersion ion implantation and deposition

Diamond-like carbon (DLC) films doped with different silicon contents up to 11.48 at.% were fabricated by plasma immersion ion implantation and deposition (PIII-D) using a silicon cathodic arc plasma source. The surface chemical compositions and bonding configurations were determined by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The results reveal that the sp³ configuration including Si–C bonds increases with higher silicon content, and oxygen incorporates more readily into the silicon and carbon interlinks on the surface of the more heavily silicon-doped DLC films. Contact angle measurements and calculations show that the Si-DLC films with higher silicon contents tend to be more hydrophilic and possess higher surface energy. The surface states obtained by silicon alloying and oxygen incorporation indicate increased silicon oxycarbide bonding states and sp³ bonding states on the surface, and it can be accounted for by the increased surface energy particularly the polar contribution.     

Dependence of the composition and bonding structure of carbon nitride films deposited by direct current plasma assisted pulsed laser ablation on the deposition temperature

Carbon nitride films were deposited by direct current plasma assisted pulsed laser ablation of a graphite target under nitrogen atmosphere. Atomic force microscopy (AFM), Fourier transform infrared (FTIR), Raman, and X-ray photoelectron spectroscopy (XPS) were used to characterize the surface morphology, bonding structure, and composition of the deposited films. The influence of deposition temperature in the range 25–400 °C on the composition and bonding structure of carbon nitride films was systematically studied. AFM images show that surface roughness and cluster size increase monotonically with deposition temperature. XPS, FTIR, and Raman spectra indicate directly the existence of CN, CN, and CN bonds in the deposited films. The increase of deposition temperature results in a drastic decrease in the N/C ratio, the content of CN bond and N atoms bonded to sp³ C atoms, in addition to the increase in the content of disorder sp² C atoms and N atoms bonded to sp² C atoms in the deposited films. Raman spectra show that the intensity ratio of D peak over G peak increases with increasing deposition temperature to 200 °C, then decreases with the further increase of deposition temperature, which results from the continuous growth of sp² cluster in the films.     

A comparative study of elastic recoil detection analysis (ERDA), electron energy loss spectroscopy (EELS) and X-ray photoelectron spectroscopy (XPS) for structural analysis of amorphous carbon nitride films

A set of carbon and carbon nitride films has been prepared by ion-beam-assisted filtered cathodic vacuum arc deposition. The films were examined by elastic recoil detection analysis (ERDA), electron energy loss spectroscopy (EELS) and X-ray photoelectron spectroscopy (XPS). ERDA provides the stoichiometry and mass density of the samples. This study covers the range of 0 up to 29 at.% N and 2.9 g cm⁻³ down to 2.0 g cm⁻³ respectively. The carbon K-edge and the plasmon loss were examined by EELS. The C 1s and N 1s core level spectra were recorded by XPS. The main result is that for significant nitrogen contents the mass density, and hence the plasmon energy and very likely the sp³-fraction, is reduced considerably. The C 1s signals of the carbon nitride layers show a multi-peak structure but the peaks are rather broad and an accurate determination of peak positions is not possible. The splitting of the N 1s signal in four contributions at about 398, 400, 400.6 and 402 eV is observed only for the low density carbon nitrides. A CN_x sample with a density of 2.6 g cm⁻³ and equal amounts of sp²- and sp³-bonded carbon shows only a single peak. We show that the components in the N 1s multi-peak structure can be related to atomic arrangements in a fully sp²-bonded network. In particular, the component at 398 eV does not necessarily indicate the presence of a material similar to β-C₃N₄.     

Quantification of sliding-induced phase transformation in N3FC diamond-like carbon films

We investigate magnetron-sputtered “N3FC” diamond-like carbon films at the nanoscale using an in situ transmission electron microscopy sliding experiment. We measure the sliding-induced changes in sp³- and sp²-hybridized carbon using electron energy loss spectroscopy, taking into account the effect of the electron beam. The rate of the phase transformation from sp³ to sp² bonding is quantified as being between 0.009% and 0.018% volume transformed per sliding pass.     

Chemical bonding in carbon nitride films studied by X-ray spectroscopies

Carbon nitride films are deposited using dc magnetron sputtering in a N₂ discharge. The nature of chemical bonding of the films is investigated using X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure, and X-ray emission spectroscopy. X-Ray photoelectron spectroscopy spectra show that N1s binding states depend on substrate temperature, in which two pronounced peaks can be observed. The near edge X-ray absorption fine structure at C1s and N1s exhibits a similar absorption profile in the π* resonance region, but the σ* resonance is sharper in the N1s spectra. Resonant N K-emission spectra show a strong dependence on excitation photo energies. Compared XPS N1s spectra with recent theoretical calculations by Johansson and Stafstrom, two main nitrogen sites are assigned in which N bound to sp³ hybridized C and sp² hybridized C, respectively. The correlation of X-ray photoelectron, X-ray absorption, and X-ray emission spectra for N in carbon nitride films is also discussed.