Electrical and optical properties of diamond-like carbon films deposited by pulsed laser ablation

Pulsed laser ablation of a graphite target was carried out by ArF excimer laser deposition at a laser wavelength of 193 nm and fluences of 10 and 20 J/cm² to produce diamond-like carbon (DLC) films. DLC films were deposited on silicon and quartz substrates under 1 × 10^? 6 Torr pressure at different temperatures from room temperature to 250 °C. The effect of temperature on the electrical and optical properties of the DLC films was studied. Laser Raman Spectroscopy (LRS) showed that the DLC band showed a slight increase to higher frequency with increasing film deposition temperature. Spectroscopic ellipsometry (SE) and ultraviolet–visible absorption spectroscopy showed that the optical band gap of the DLC films was 0.8–2 eV and decreased with increasing substrate temperature. These results were consistent with the electrical resistivity results, which gave values for the films in the range 1.0 × 10⁴–2.8 × 10⁵ Ω cm and which also decreased with deposition temperature. We conclude that at higher substrate deposition temperatures, DLC films show increasing graphitic characteristics yielding lower electrical resistivity and a smaller optical band gap.     

Synthesis and mechanical properties of carbon nanotube/diamond-like carbon composite films

Diamond-like carbon (DLC) coatings were successfully deposited on carbon nanotube (CNT) films with CNT densities of 1 × 10⁹/cm², 3 × 10⁹/cm², and 7 × 10⁹/cm² by a radio frequency plasma-enhanced chemical vapor deposition (CVD). The new composite films consisting of CNT/DLC were synthesized to improve the mechanical properties of DLC coatings especially for toughness. To compare those of the CNT/DLC composite films, the deposition of a DLC coating on a silicon oxide substrate was also carried out. A dynamic ultra micro hardness tester and a ball-on-disk type friction tester were used to investigate the mechanical properties of the CNT/DLC composite films. A scanning electron microscopic (SEM) image of the indentation region of the CNT/DLC composite film showed a triangle shape of the indenter, however, chippings of the DLC coating were observed in the indentation region. This result suggests the improvement of the toughness of the CNT/DLC composite films. The elastic modulus and dynamic hardness of the CNT/DLC composite films decreased linearly with the increase of their CNT density. Friction coefficients of all the CNT/DLC composite films were close to that of the DLC coating.     

Improved surface coverage of an optical fibre with nanocrystalline diamond by the application of dip-coating seeding

Growth processes of diamond thin films on the fused silica optical fibres (10 cm in length) were investigated at various temperatures. Fused silica pre-treatment by dip-coating in a dispersion consisting of detonation nanodiamond (DND) in dimethyl sulfoxide (DMSO) with polyvinyl alcohol (PVA) was applied. Nanocrystalline diamond (NCD) films were deposited on the fibres using the microwave plasma assisted chemical vapour deposition (MW PA CVD) method. The longitudinal variation of NCD morphology, structure and optical parameters were specifically investigated. The evolution of the film morphology and film thickness along the fibre length was studied using scanning electron microscopy (SEM). The chemical composition of the NCD film was examined with micro-Raman Spectroscopy. The sp³/sp² band ratio was calculated using the Raman spectra deconvolution method. An approximately 5 cm-long homogeneous diamond film has been obtained on the surface of the fibre sample. Thickness, roughness and optical properties of NCD films in the VIS–NIR range were investigated on the reference quartz slides using spectroscopic ellipsometry. The samples exhibited relatively low deviations of refractive index (2.3 ± 0.25) and extinction coefficient (0.05 ± 0.02) along the length of 5 cm, as estimated at a wavelength of 550 nm. In order to show the effectiveness of deposition process on optical fibres, diamond films were also grown on the fibre with induced long-period grating (LPG). The results of transmission measurements demonstrated that an LPG with diamond overlay exhibits the appropriate dependency on the optical properties of external medium. Thus, the deposition process has a negligible effect on the fibre transmission properties.     

Large-area uniform hydrogen-free diamond-like carbon films prepared by unbalanced magnetron sputtering for infrared anti-reflection coatings

The hydrogen-free diamond-like carbon (DLC) films are potential materials to be used as infrared anti-reflection protective coatings if their optical absorption can be reduced to get relatively thick films needed. In this study, hydrogen-free DLC films were deposited by the physical vapor deposition (PVD) method in an unbalanced magnetron sputtering (UBMS) system with a rectangle graphite target of 440 × 80 mm in the argon atmosphere. The UBMS system was described in detail and the magnetron field distribution of the target was denoted in this work. The film thickness uniformity was investigated and the results showed that this system is capable of depositing uniform films larger than 150 mm in diameter. The infrared transmission spectra of DLC films were analyzed by a FTIR spectrometer, the results indicating that transparent films were obtained in the infrared region for the single side DLC coated on the silicon and germanium substrates, and about 68.83% and 63.05% transmittance were achieved respectively at the wave number of 2983 /cm, close to theoretical value for non-absorption carbon material. No obvious absorption peaks were found between 5000 and 800 /cm. The refractive index and extinction coefficient of the DLC films deposited under optimized conditions were about 2.08 and 0.067 respectively at the wavelength of 1600 nm. These important optical characteristics showed that the hydrogen-free DLC films prepared in the UBMS system were suitable for infrared transmission enhancement applications.     

Electron field emission from filtered arc deposited diamond-like carbon films using Au and Ti layers

In this work, tetrahedral diamond-like carbon (DLC) films are deposited on Si, Ti/Si and Au/Si substrates by a new plasma deposition technique — filtered arc deposition (FAD). Their electron field emission characteristics and fluorescent displays of the films are tested using a diode structure. It is shown that the substrate can markedly influence the emission behavior of DLC films. An emission current of 0.1 μA is detected at electric field E_DLC/Si=5.6 V/μm, E_DLC/Au/Si=14.3 V/μm, and E_DLC/Ti/Si=5.2 V/μm, respectively. At 14.3 V/μm, an emission current density J_DLC/Si=15.2 μA/cm², J_DLC/Au/Si=0.4 μA/cm², and J_DLC/Ti/Si=175 μA/cm² is achieved, respectively. It is believed that a thin TiC transition layer exists in the interface between the DLC film and Ti/Si substrate.     

Preparation of diamond like carbon thin films above room temperature and their properties

Diamond like carbon (DLC) thin films were deposited on p-type silicon (p-Si), quartz and ITO substrates by microwave (MW) surface-wave plasma (SWP) chemical vapor deposition (CVD) at different substrate temperatures (RT ∼ 300 °C). Argon (Ar: 200 sccm) was used as carrier gas while acetylene (C₂H₂: 20 sccm) and nitrogen (N: 5 sccm) were used as plasma source. Analytical methods such as X-ray photoelectron spectroscopy (XPS), FT-IR and UV–visible spectroscopy were employed to investigate the structural and optical properties of the DLC thin films respectively. FT-IR spectra show the structural modification of the DLC thin films with substrate temperatures showing the distinct peak around 3350 cm^− 1 wave number; which may corresponds to the sp² C–H bond. Tauc optical gap and film thickness both decreased with increasing substrate temperature. The peaks of XPS core level C 1 s spectra of the DLC thin films shifted towards lower binding energy with substrate temperature. We also got the small photoconductivity action of the film deposited at 300 °C on ITO substrate.     

Structure and optical properties of Cu-DLC composite films deposited by cathode arc with double-excitation source

Copper-doped diamond-like carbon films (Cu-DLC) were fabricated on silicon and quartz substrates by cathode arc technique with direct-current and pulse double-excitation source. The microstructure, composition, morphology, hardness and optical properties of the films were studied by Raman, XPS, AFM and SEM, UV-Vis, laser ellipsometer and Vickers sclerometer. The results showed that Cu doping increases the size, ordering and amount of sp²-C clusters in the Cu-DLC composite films. The microstructure parameters enhance with increasing the Cu content to 22.4 wt%. All the films show specific nano-structural surface, however, the lower Cu content induces finer particle formation in the Cu-DLC films. When the arc current is higher than 60 A, the roughness and particle size of Cu-DLC composite films increase with increasing the Cu content. The average transmittance of the Cu-DLC films in Vis-NIR region is smaller than 40% when the Cu content exceeds 12.6 wt%. With increasing the Cu content, the optical band gap (E_g) of the films decreases from 3.54 eV to 0.25 eV. The relationships among the E_g, refractive index and extinction coefficient for the Cu-DLC films were found and indirectly revealed the correlation of microstructure and optical properties of the films with the Cu content variation.     

Structural,electrical and optical properties of molybdenum-doped TiO2 thin films

Molybdenum doped TiO₂ (MTO) thin films were prepared by radio frequency (RF) magnetron sputtering at room temperature and followed by a heat treatment in a reductive atmosphere containing 90% N₂ and 10% H₂. XRD and FESEM were employed to evaluate the microstructure of the MTO films, revealing that the addition of molybdenum enhances the crystallization and increases the grain size of TiO₂ films. The optimal electrical properties of the MTO films were obtained with 3 wt% Mo doping, producing a resistivity of 1.1×10^?3 Ω cm, a carrier density of 9.7×10²⁰ cm^?3 and a mobility of 5.9 cm²/Vs. The refractive index and extinction coefficient of MTO films were also measured as a function of film porosity. The optical band gap of the MTO films ranged from 3.28 to 3.36 eV, which is greater than that of the un-doped TiO₂ film. This blue shift of approximately 0.14 eV was attributed to the Burstein–Moss effect.     

The role of substrate temperature on the properties of nanocrystalline Mo doped ZnO thin films by spray pyrolysis

Transparent conducting molybdenum (2 at.%) doped zinc oxide (MZO) films were prepared with various substrate temperatures by spray pyrolysis technique on glass substrates. The effect of substrate temperature on the structural, surface morphological, electrical, optical and photoluminescence properties of these films were studied. The X-ray diffraction analysis revealed that the films are polycrystalline in nature having a wurtzite structure with a preferred grain orientation in the (0 0 2) direction. The average crystallite size of the films increases from 17 nm to 28 nm with the increase of substrate temperature from 573 K to 623 K, thereafter it slightly decreases with further increase of substrate temperature to 723 K. Analysis of structural parameters indicates minimum strain and stress values for films deposited at a substrate temperature of 673 K. From atomic force microscopy (AFM) analysis, it is found that rms roughness of the films deposited at 623 K is a minimum, indicating better optical quality. The scanning electron microscopy (SEM) measurements showed that the surface morphology of the films changes with substrate temperature. Optical parameters such as optical transmittance, reflectance, refractive index, extinction coefficient, dielectric constant and optical band gap have been studied and discussed with respect to substrate temperature. Room temperature photoluminescence (PL) spectra show the deep-level emission in the MZO thin films. The films exhibit a low electrical resistivity of 6.22 × 10^?2 Ω cm with an optical transmittance of 75% in the visible region at a substrate temperature of 623 K.     

Tribological properties of polymer composites with diamond-like carbon flakes

Composites of epoxy resin with diamond-like carbon (DLC) flakes were fabricated. The DLC flakes were prepared from a DLC film deposited by chemical vapor deposition on an aluminum substrate. The tribological properties of composites were evaluated in air and water environments using a reciprocating friction tester and an AISI 440C mating ball. The friction coefficient of the epoxy composite decreased from 0.90 to 0.69 in air and from 0.71 to 0.29 in water with the addition of DLC flakes. The specific wear rate of the composite also decreased from 5 × 10^? 5 to 7 × 10^? 6 mm³/N m in air and from 4 × 10^? 5 to 4 × 10^? 6 mm³/N m in water. In contrast, the wear of the mating ball increased. Furthermore, the tribological properties of DLC flakes as an additive in water were evaluated. The suspension of powdered DLC in water reduced the friction coefficient of epoxy resin against the AISI 440C mating ball. Furthermore, the wear of the resin was negligibly small, although severe abrasive wear on the mating ball was observed.     

Localized DLC etching by a non-thermal atmospheric-pressure helium plasma jet in ambient air

Using a versatile atmospheric-pressure helium plasma jet, diamond-like carbon (DLC) films were etched in ambient air. We observed that the DLC films are etched at a nominal rate of around 60 nm/min in the treated area (230 μm in diameter) during a 20-min exposure. The etching rate increased after the initial 10-min exposure. During this period, the flat DLC surface was structurally modified to produce carbon nanostructures with a density of ~ 2.4 × 10¹¹ cm^− 2. With this increase in surface area, the etching rate increased. After 20 min, the DLC film had a circular pattern etched into it down to the substrate where silicon nanostructures were observed with sizes varying from 10 nm to 1 μm. The initial carbon nanostructure formation is believed to involve selective removal of the sp²-bonded carbon domains. The carbon etching results from the formation of reactive oxygen species in the plasma.     

Microstructure,optical and electrical properties of sputtered HfTiO high-k gate dielectric thin films

The microstructure, optical and electrical properties of HfTiO high-k gate dielectric thin films deposited on Si substrate and quartz substrate by RF magnetron sputtering have been investigated. Based on analysis from x-ray diffraction (XRD) measurements, it has been found that the as-deposited HfTiO films remain amorphous regardless of the working gas pressure. Meanwhile, combined with characterization of ultraviolet-visible spectroscopy (UV–vis) and spectroscopy ellipsometry (SE), the deposition rate, band gap and optical properties of sputtered HfTiO gate dielectrics were determined. Besides, by means of the characteristic curves of high frequency capacitance–voltage (C–V) and leakage current density–voltage (J–V), the electrical parameters, such as permittivity, total positive charge density, border trap charge density, and leakage current density, have been obtained. The leakage current mechanisms are also discussed. The energy band gap of 3.70 eV, leakage current density of 1.39×10⁻⁵ A/cm² at bias voltage of 2 V, and total positive charge density and border trap charge density of 9.16×10¹¹ cm⁻² and 1.3×10¹¹ cm⁻², respectively render HfTiO thin films deposited at 0.6 Pa, potential high-k gate dielectrics in future CMOS devices.     

Fabrication of highly efficient TiO2/Ag/TiO2 multilayer transparent conducting electrode with N ion implantation for optoelectronic applications

Fabrication of highly conductive and transparent TiO₂/Ag/TiO₂ (referred hereafter as TAT) multilayer films with nitrogen implantation is reported. In the present work, TAT films were fabricated with a total thickness of 100 nm by sputtering on glass substrates at room temperature. The as-deposited films were implanted with 40 keV N ions for different fluences (1×10¹⁴, 5×10¹⁴, 1×10¹⁵, 5×10¹⁵ and 1×10¹⁶ ions/cm²). The objective of this study was to investigate the effect of N⁺ implantation on the optical and electrical properties of TAT multilayer films. X-ray diffraction of TAT films shows an amorphous TiO₂ film with a crystalline peak assigned to Ag (111) diffraction plane. The surface morphology studied by atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) revealed smooth and uniform top layer of the sandwich structure. The surface roughness of pristine film was 1.7 nm which increases to 2.34 nm on implantation for 1×10¹⁴ ions/cm² fluence. Beyond this fluence, the roughness decreases. The oxide/metal/oxide structure exhibits an average transmittance ~80% for pristine and ~70% for the implanted film at fluence of 1×10¹⁶ ions/cm² in the visible region. The electrical resistivity of the pristine sample was obtained as 2.04×10⁻⁴ Ω cm which is minimized to 9.62×10⁻⁵ Ω cm at highest fluence. Sheet resistance of TAT films decreased from 20.4 to 9.62 Ω/□ with an increase in fluence. Electrical and optical parameters such as carrier concentration, carrier mobility, absorption coefficient, band gap, refractive index and extinction coefficient have been calculated for the pristine and implanted films to assess the performance of films. The TAT multilayer film with fluence of 1×10¹⁶ ions/cm² showed maximum Haacke figure of merit (FOM) of 5.7×10⁻³ Ω⁻¹. X-ray photoelectron spectroscopy (XPS) analysis of N 1s and Ti 2p spectra revealed that substitutional implantation of nitrogen into the TiO₂ lattice added new electronic states just above the valence band which is responsible for the narrowing of band gap resulting in the enhancement in electrical conductivity. This study reports that fabrication of multilayer transparent conducting electrode with nitrogen implantation that exhibits superior electrical and optical properties and hence can be an alternative to indium tin oxide (ITO) for futuristic TCE applications in optoelectronic devices.     

A superhard diamond-like carbon film

A superhard hydrogen-free amorphous diamond-like carbon (DLC) film was deposited by pulsed arc discharge using a carbon source accelerator in a vacuum of 2×10⁻⁴ Pa. The growth rate was about 15 nm/min and the optimum ion-plasma energy was about 70 eV. The impact of doping elements (Cu, Zr, Ti, Al, F(Cl), N) on the characteristics of DLC films deposited on metal and silicon substrates was studied aiming at the choice of the optimum coating for low friction couples. The microhardness of thick (≥20 μm) DLC films was studied by Knoop and Vickers indentations, medium thick DLC films (1–3 μm) were investigated using a ‘Fischerscope’, and Young's module of thin films (20–70 nm) was studied by laser induced surface acoustic waves. The bonds in DLC films were investigated by electron energy loss spectroscopy (EELS), X-ray excited Auger electron spectroscopy (XAES), and X-ray photoelectron spectroscopy (XPS). The adhesion of DLC films was defined by the scratch test and Rockwell indentation. The coefficient of friction of the Patinor DLC film was measured by a rubbing cylinders test and by a pin-on-disk test in laboratory air at about 20% humidity and room temperature. The microhardness of the Patinor DLC film was up to 100 GPa and the density of the film was 3.43–3.65 g/cm³. The specific wear rate of the Patinor DLC film is comparable to that of other carbon films.     

Influence of UV-laser radiation on the synthesis of DLC films by ECR-plasma-CVD

Simultaneous UV-laser irradiation during the deposition of DLC films has been found to significantly influence the growth process and to favourably modify the film properties. The influence of the spectral and energetic parameters of laser radiation was investigated with respect to the optical, structural and mechanical properties of DLC films. Detailed investigations on the mechanism of laser-induced structural transformations in DLC films are presented, as studied by Raman spectroscopy. Further, the characteristic peak for the nanocrystalline diamond phase at 1140 cm⁻¹ was evident for irradiated films. Noteworthy is the increase in film microhardness with increasing energy of the deposited carbon ions with a simultaneous reduction in internal stresses, caused by photolytically induced modification of the film structure by UV-laser radiation. As a result, hard (up to 30 GPa) and thick (up to 3 μm) defect-free DLC films without cracks have been synthesized.     

Molecular structure of SiOx-incorporated diamond-like carbon films; evidence for phase segregation

Silicon-oxide incorporated amorphous hydrogenated diamond-like carbon films (SiO_x–DLC, 1 ≤ x ≤ 1.5) containing up to 24 at.% of Si (H is excluded from the atomic percentage calculations reported here) were prepared using pulsed direct current plasma-enhanced chemical vapour deposition (DC-PECVD). Molecular structure, optical properties and mechanical properties of these films were assessed as a function of Si concentration. The spectroscopic results indicated two structural regimes. First, for Si contents up to ~ 13 at.%, SiO_x–DLC is formed as a single phase with siloxane, O–Si–C₂, bonding networks. Second, for films with Si concentrations greater than 13 at.%, SiO_x–DLC with siloxane bonding and SiO_x deposit simultaneously as segregated phases. The variations in mechanical properties and optical properties as a function of Si content are consistent with the above changes in the film composition.     

The effect of refractive index on the friction coefficient of DLC coated polymer substrates

This paper describes the enhanced mechanical performance that can be achieved by the application of diamond-like carbon (DLC) coatings to polymer substrates. The polymers coated are silicone and polyethylene, and the effect on the friction coefficient is studied. Film adhesion is found to depend on the DLC film refractive index (n), whereas the friction is largely independent of n in the range studied. Films were deposited from a He/C₂H₂ mixture at 20 Pa (0.15 Torr) on to the polymer substrates placed on a 10-cm-diameter electrode driven at 13.56 MHz. Film growth was monitored by in-situ ellipsometry (at 675 nm), which was performed on a glass slide placed near the polymer substrate. Friction measurements were obtained using a pin-on-disk tribometer, and measurements were carried out using a stainless-steel pin at a linear speed of 6 cm s⁻¹. Film adhesion was evaluated using a pull-adhesion tester. It was found that DLC coatings adhere well to the polymer substrates and can significantly reduce the friction coefficient of polymers such as silicone. Higher refractive index films (which are harder and have a higher mechanical strength) were found to have a poorer adhesion and provide a slightly increased friction on the polymer surface when compared to lower-index films. This study indicates that DLC may be used to enhance the tribological properties of polymers with potential applications in the biomaterials and light-engineering industries.     

Effect of withdrawal rate on the evolution of optical properties of dip-coated yttria-doped zirconia thin films

In this work, the Swanepoel method is described and applied for determining various optical parameters and thicknesses of dip–coated yttria–doped zirconia thin films. Using this method the influence of the withdrawal rate on optical parameters was studied. The characterization of the deposited thin films was carried out by optical microscopy and FT–IR spectrophotometry. As expected, coating thickness was closely related to the withdrawal rate and consequently influenced optical parameters such as refractive index, extinction coefficient, and absorption coefficient. Regarding the average refractive index of the prepared thin films, n is in the 2.0 – 2.2 range, the higher refractive index average value being obtained with films deposited at 25 mm min⁻¹ (n = 2.19). The value of the optical band gap was also studied, this increased with withdrawal rate and was quite similar to values reported by other investigators at 50, 25 and 10 mm min⁻¹. Thus, this study proposes analysing the influence of the withdrawal rate for the manufacture of different types of thin films with previously specified optical parameters.     

Annealing-temperature-modulated optical,electrical properties,and leakage current transport mechanism of sol–gel-processed high-k HfAlOx gate dielectrics

Deposition of HfAlO_x gate dielectric films on n-type Si and quartz substrates by sol-gel technique has been performed and the optical, electrical characteristics of the as-deposited HfAlO_x thin films as a function of annealing temperature have been investigated. The optical properties of HfAlO_x thin films related to annealing temperature are investigated by ultraviolet-visible spectroscopy (UV–vis) and spectroscopy ellipsometry (SE). By measurement of UV–vis, average transmission of all the HfAlO_x samples are about 85% owing to their uniform composition. And the increase in band gap has been observed with the increase of annealing temperature. Moreover, the increase of refractive index (n) and density with the increase of annealing temperature are obtained by SE measurements. Additionally, the electrical properties based on Al/Si/HfAlO_x/Al capacitor are analyzed by means of the high frequency capacitance-voltage (C-V) and the leakage current density-voltage (J-V) characteristics. Results have shown that 400 °C-annealed sample demonstrates good electrical performance, including larger dielectric constant of 12.93 and lower leakage current density of 3.75×10⁻⁷ A/cm² at the gate voltage of 1 V. Additionally, the leakage current conduction mechanisms as functions of annealing temperatures are also discussed systematically.     

Structural and mechanical properties of DLC films prepared by bipolar PBII&D

In the present study, diamond-like carbon (DLC) films were prepared by bipolar plasma based ion implantation and deposition (PBII&D), and the structural and mechanical properties of the DLC films deposited on Si substrates were evaluated by Raman spectroscopy. In the PBII&D processing, the positive and negative pulse voltages were varied from 1 to 3 kV and from ? 1 to ? 15 kV, respectively. With an increase in the pulse voltages, the Raman G-peak position and I(D) / I(G) ratio increased, and the G-peak full width at half maximum (FWHM(G)) decreased, indicating graphitization of the DLC films. In the low wavenumber regime, the FWHM(G) increases when the G-peak shifts to higher wavenumbers, reaching a maximum value at around 1540 cm^? 1, and then decreases. This behavior was due to the structural changes occurring in the DLC films with an increase in the wavenumber. DLC to polymer-like carbon (PLC) transition occurred in the low wavenumber regime, and DLC to graphite-like carbon (GLC) transition occurred in the high wavenumber regime. Further, two different trends were observed in the relationship between the mechanical properties (hardness, elastic modulus, and internal stress) of the DLC films and the FWHM(G), originating from the structural change from DLC to GLC and PLC.