Development of a wide-tuning range and high Q variable capacitor using metal-based surface micromachining process

This study aims to improve the tuning range and quality-factor (Q) of micro variable capacitors for wireless communication applications. A suspending 0.5 μm-thick gold thin-plate with two-gap structure in one-to-three ratio of spacing is designed for the maximization of tuning range. To enhance effectively the flexural rigidity of top metal-plate and improve further the tuning range of the varactor, a double-cross-type microstructure with two vertical fixed-fixed beam springs and four horizontal fixed-guided cantilever beams is introduced. Besides, a glass substrate (Corning 7740) was used to reduce substantially the power dissipation and improve the Q-factor of variable capacitor. The new glass-based double-cross-type micro variable capacitor has demonstrated many superior performances, including the wide-tuning range (2100%, at 1.0 MHz with 6.0 V), the moderate capacitance (0.56 pF, at 2.4 GHz and without DC bias), 6.5 V pull-in voltage, and the high Q-factor (40.6, at 2.4 GHz). These characteristics approximately match with the theoretical derivation or simulated results from Agilent-ADS, Ansoft-HFSS, and IntelliSuite software.     

Photonic crystal slabs with hexagonal air holes fabricated by selective area metal organic vapor phase epitaxy

It is shown that the photonic crystal slab (PCS) with hexagonal air holes has band gaps in the guided mode spectrum, which can be compared to that of the PCS with circular air holes, thus it is also a good candidate to be used for the PC devices. The PC with hexagonal air holes and a = 0.5 μm and r = 0.15 μm was fabricated successfully by selective area metal organic vapor phase epitaxy (SA-MOVPE). The vertical and smooth sidewalls are formed and the uniformity is very good. The same process was also used to fabricate a hexagonal air hole array with the width of 0.1 μm successfully. The air-bridge PCS with hexagonal air holes and a = 0.3 μm and r = 0.09 μm was also fabricated successfully by SA-MOVPE. Further optimization of the growth conditions for the sacrificial layer and the selective etching of the GaAs cap layer is also needed. Our experimental results indicate that SA-MOVPE is a promising method for fabricating PC devices and photonic nanostructures.     

Micromachined quartz resonator based infrared detector array

We report the fabrication and performance of a micromachined Y-cut quartz resonator based thermal infrared detector array. 1 mm diameter and 18 μm thick (90 MHz) inverted mesa configuration quartz resonator arrays with excellent resonance characteristics have been fabricated by RIE etching of quartz. Temperature sensitivity of 7.2 kHz/K was experimentally measured. Infrared calibration tests on the resonator array even without the use of infrared absorbers gave a responsivity of 14.3 MHz/W and an NEP of 326 nW. In this first report on the performance of the Y-cut quartz resonator infrared thermal detector array, the response time measurements were found to be limited by the slow measurement time of the impedance scans and the undesired heating of the quartz substrate. Most importantly, this initial work demonstrates the possibility of realizing infrared detector arrays for room temperature thermal imaging applications that can rival current state of the art in the field.     

A 5 GHz LC-VCO frequency synthesizer for unlicensed band of WiMAX

This paper presents a low power and low phase noise CMOS integer-N frequency synthesizer based on the charge-pump Phase Locked Loop (PLL) topology. The frequency synthesizer can be used for IEEE 802.16 unlicensed band of WiMAX (World Interoperability for Microwave Access). The operation frequency of the proposed design is ranged from 5.13 to 5.22 GHz. The proposed Voltage-Controlled Oscillator (VCO) achieves low power consumption and low phase noise. The high speed divider is implemented by an optimal extended true single phase clock (E-TSPC) prescaler. It can achieve higher operating frequency and lower power consumption. A new frequency divider is also proposed to eliminate the hardware overhead of the S counter in the conventional programmable divider. The proposed frequency synthesizer consists of a phase-frequency detector (PFD), a charge pump, a low-pass loop filter, a VCO, and a frequency divider. The simulated phase noise of the proposed VCO is −121.6 dBc/Hz at 1 MHz offset from the carrier frequency. The proposed frequency synthesizer consumes 13.1 mW. The chip with an area of 1.048 × 1.076 mm² is fabricated in a TSMC 0.18 μm CMOS 1P6M technology process.     

Design of embedded TCAM based longest prefix match search engine

The content addressable memory (CAM) based solutions are very useful in network applications due to its high speed parallel search mechanism. This paper presents a novel Ternary CAM (TCAM) based NAND Pseudo CMOS–Longest Prefix Match (NPC–LPM) search engine. The proposed system provides a simple hardware based solution using novel 11T TCAM cell structures and NPC word line technique, for network routers. The experiments were performed on 256 × 128 NPC–LPM system under 0.13 μm technology. The simulation result shows that the proposed design provides low power dissipation of 5.78 mW and high search speed of 315 MSearches/s under 1.3 V supply voltage. The presented NPC–LPM system meets the speed requirement of Optical Carrier (OC) 3072 with line-rate of 160 Gb/s in Ethernet networking and IPv6 protocol. The experimental results also show that the proposed system improves power-performance by 65%.     

Mechanical design and characterization of a resonant magnetic field microsensor with linear response and high resolution

A resonant magnetic field microsensor based on Microelectromechanical Systems (MEMS) technology including a piezoresistive detection system has been designed, fabricated, and characterized. The mechanical design for the microsensor includes a symmetrical resonant structure integrated into a seesaw rectangular loop (700 μm × 450 μm) of 5 μm thick silicon beams. An analytical model for estimating the first resonant frequency and deflections of the resonant structure by means of Rayleigh and Macaulay's methods is developed. The microsensor exploits the Lorentz force and presents a linear response in the weak magnetic field range (40–2000 μT). It has a resonant frequency of 22.99 kHz, a sensitivity of 1.94 V T^?1, a quality factor of 96.6 at atmospheric pressure, and a resolution close to 43 nT for a frequency difference of 1 Hz. In addition, the microsensor has a compact structure, requires simple signal processing, has low power consumption (16 mW), as well as an uncomplicated fabrication process. This microsensor could be useful in applications such as the automotive sector, the telecommunications industry, in consumer electronic products, and in some medical applications.     

Design and fabrication of a new MEMS capacitive microphone using a perforated aluminum diaphragm

In this paper, a novel single-chip MEMS capacitive microphone is presented. The novelties of the method relies on the moveable aluminum (Al) diaphragm positioned over the backplate electrode, where the diaphragm includes a plurality of holes to allow the air in the gap between the electrode and the diaphragm to escape and thus reducing acoustical damping in the microphone. Spin-on-glass (SOG) was used as a sacrificial and isolating layer. Backplate is monocrystalline silicon wafer, that it is more stiff. This work will focus on design, simulation, fabrication and characterization of the microphone. The structure has a diaphragm thickness of 3 μm, a diaphragm size of 0.5 mm × 0.5 mm, and an air gap of 1.0 μm. The results show that the pull-in voltage is 105 V, the initial stress of evaporated aluminum diaphragm is around 1500 MPa and the zero bias capacitance of microphone is 2.12 pF. Comparing with the previous works, this microphone has several advantages: the holes have been made on diaphragm, therefore no need of KOH etching to make back chamber, in this way the chip size of each microphone is reduced. The fabrication process uses minimal number of layers and masks to reduce the fabrication cost.     

Spin-valve planar Hall sensor for single bead detection

The planar Hall effect (PHE) sensor with a junction size of 3 μm × 3 μm for a single micro-bead detection has been fabricated successfully using a typical spin-valve thin film Ta(5)/NiFe(16)/Cu(1.2)/NiFe(2)/IrMn(15)/Ta(5) nm. The PHE sensor exhibits a sensitivity of about 7.2 μV Oe^?1 in the magnetic field range of ±7 Oe approximately. We have performed an experiment to illustrated the possibility of single micro-bead detection by using a PHE sensor. A single micro-bead of 2.8 μm diameter size is secluded from 0.1% dilute solution of the Dynabeads^® M-280 dropped on the sensor surface and is located on the sensor junction by using a micro magnetic needle. The comparison of the PHE voltage profiles in the field range from 0 to 20 Oe in the absence and presence of a single micro-bead identifies a single Dynabeads^® M-280, the maximal signal change as large as ΔV ～ 1.1 μV can be obtained at the field ～6.6 Oe. The results are well described in terms of the reversal of a basic single domain structure.     

Design and performance of a microcantilever-based hydrogen sensor

This paper describes the design of, and the effects of basic environmental parameters on, a microelectromechanical (MEMS) hydrogen sensor. The sensor contains an array of 10 micromachined cantilever beams. Each cantilever is 500 μm wide×267 μm long×2 μm thick and has a capacitance readout capable of measuring cantilever deflection to within 1 nm. A 20-nm-thick coating of 90% palladium–10% nickel bends some of the cantilevers in the presence of hydrogen. The palladium–nickel coatings are deposited in ultra-high-vacuum (UHV) to ensure freedom from a “relaxation” artifact apparently caused by oxidation of the coatings. The sensor consumes 84 mW of power in continuous operation, and can detect hydrogen concentrations between 0.1 and 100% with a roughly linear response between 10 and 90% hydrogen. The response magnitude decreases with increasing temperature, humidity, and oxygen concentration, and the response time decreases with increasing temperature and hydrogen concentration. The 0–90% response time of an unheated cantilever to 1% hydrogen in air is about 90 s at 25 °C and 0% humidity.     

Design of high speed gate driver employing IZO TFTs

This paper presents a new bi-side gate driver integrated by indium-zinc-oxide thin film transistors (IZO TFTs). Our optimized operate method can achieve high speed performance by employing a lower duty ratio (25%) CK2 with its pulse located in the middle of the pulse of CK2L to fully use the bootstrapped high voltage of node Q. In addition, the size of devices is optimized by calculation and simulation, and the function of the proposed gate driver is predicted by the circuit simulation. Furthermore, the proposed gate driver with 20 stages is fabricated by the IZO TFTs process. It is shown that a 2.6 μs width pulse with good noise-suppressed characteristic can be successfully output at the condition of R_load = 6 kΩ and C_load = 150 pF. The power consumption of the proposed gate driver with 20 stages is measured as 1 mW. Hence, the proposed gate driver may be applied to the display of 4K resolution (4096 × 2160) at a frame rate of 120 Hz. Moreover, there is a good stability for the proposed gate driver under 48 h operation.     

Passive single chip wireless microwave pressure sensor

A novel micromachined passive wireless pressure sensor is presented. The device consists of a tuned circuit operating at 10 GHz fabricated on to a SiO₂ membrane, supported on a silicon wafer. A pressure difference across the membrane causes it to deflect so that an antenna circuit detunes. The circuit is remotely interrogated to read off the sensor data wirelessly. The chip area is 5 mm × 4 mm and the membrane area is 2 mm² with a thickness of 4 μm. Two on-chip passive resonant circuits were investigated: a meandered dipole and a zigzag antenna. Both have a physical length of 4.25 mm. The sensors show a shift in their resonant frequency in response to changing pressure of 10.28–10.27 GHz for the meandered dipole, and 9.61–9.58 GHz for the zigzag antenna. The sensitivities of the meandered dipole and zigzag sensors are 12.5 kHz/mbar and 16 kHz/mbar respectively.     

Ferroelectric properties of direct-patterned half-micron thick PZT film

Ferroelectric properties of direct-patterned PZT(PbZr_0.52Ti_0.48O₃) films with 460 μm × 460 μm size and 510 nm thick were analyzed for applying to micro-detecting devices. A photosensitive solution containing ortho-nitrobenzaldehyde was used for the preparation of direct-patterned PZT film. PZT solution was coated on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrate for three times to obtain half-micron thick film and three times of direct-patterning process were repeated to define a pattern on multi-layer PZT film. Through intermediate and final anneal procedure of direct-patterned PZT film, any shrinkage along horizontal direction was not observed within this experimental condition, i.e., the size of the pattern was preserved after annealing, only a thickness reduction was observed after each annealing treatment. Ferroelectric properties of direct-patterned PZT film with 460 μm × 460 μm size and 510 nm thick were compared with those of un-patterned conventional PZT film and shown to be almost the same. Through this work, the high potentiality of direct-patternable PZT film for applying to micro-devices without the introduction of physical damages from dry-etching could be confirmed.     

Characteristics of a Pd–oxide–In0.49Ga0.51P high electron mobility transistor (HEMT)-based hydrogen sensor

An interesting hydrogen sensor based on a high electron mobility transistor (HEMT) device with a Pd–oxide–In_0.49Ga_0.51P gate structure is fabricated and demonstrated. The hydrogen sensing characteristics including hydrogen detection sensitivity and transient responses of the studied device under different hydrogen concentrations and temperature are measured and studied. The hydrogen detection sensitivity is related to a change in the contact potential at the Pd/insulator interface. The kinetic and thermodynamic properties of hydrogen adsorption are also studied. Experimentally, good hydrogen detection sensitivities, large magnitude of current variations (3.96 mA in 9970 ppm H₂/air gas at room temperature) and shorter absorption response time (22 s in 9970 ppm H₂/air gas at room temperature) are obtained for a 1.4 μm × 100 μm gate dimension device. Therefore, the studied device provides a promise for high-performance solid-state hydrogen sensor, integrated circuit (IC) and micro electro-mechanical system (MEMS) applications.     

Fabrication and characterization of a thermal switch

The development of a thermal switch based on arrays of liquid–metal micro-droplets is presented. Prototype thermal switches are assembled from a silicon substrate on which is deposited an array of 1600 30-μm liquid–metal micro-droplets. The liquid–metal micro-droplet array makes and breaks contact with a second bare silicon substrate. A gap between the two silicon substrates is filled with either air at 760 Torr, air at of 0.5 Torr or xenon at 760 Torr. Heat transfer and thermal resistance across the thermal switches are measured for “on” (make contact) and “off” (break contact) conditions using guard-heated calorimetry. The figure of merit for a thermal switch, the ratio of “off” state thermal resistance over “on” state thermal resistance, R_off/R_on, is 129 ± 43 for a xenon-filled thermal switch that opens 100 μm and 60 ± 17 for an 0.5 Torr air-filled thermal switch that opens 25 μm. These thermal resistance ratios are shown to be markedly higher than values of R_off/R_on for a thermal switch based on contact between polished silicon surfaces. Transient temperature measurements for the liquid–metal micro-droplet switches indicate thermal switching times of less than 100 ms. Switch lifetimes are found to exceed one-million cycles.     

Giant-grain silicon (GGS) and its application to stable thin-film transistor

We developed a giant-grain silicon (GGS) by Ni-mediated crystallization of amorphous silicon (a-Si) with a silicon-nitride (SiN_x) cap layer. Ni particles were sputtered onto the SiN_x/a-Si layer and then it was annealed at around 600 °C. The Ni diffuses through a SiN_x cap and then forms NiSi₂ crystallites in a-Si, which is able to induce crystallization. The grain size can be controlled from a few to 100 μm. The grain size can be increased with increasing the cap layer thickness or by decreasing the Ni density on the SiN_x. The p-channel GGS poly-Si TFT exhibited a field-effect mobility of 101 cm²/Vs and a threshold voltage of −3.6 V and is very stable under gate or hot carrier bias-stress. These superior performances may be due to the smooth surface of GGS poly-Si and solid-phase crystallization of a-Si.     

Investigation of Ni-based thermal bimaterial structure for sensor and actuator application

Thermal bimaterial structures made of Ni and Ni-diamond nanocomposite for sensor and actuator application are proposed, fabricated, and tested. Two deflection types of thermal bimaterial structures, including upward and downward bending types, can be easily fabricated by controlling electroplating sequence of Ni and Ni-diamond nanocomposite. According to thermal performance measurement, the tip deflection of upward and downward types can reach about 82.5 μm and ?22.5 μm for a temperature change of 200 °C, respectively. In the condition, the thermomechanical sensitivity and output force are 412.5 nm/K and 97.0 μN for upward type thermal bimaterial structure; and ?112.5 nm/K and ?26.5 μN for downward type one. Due to the low electroplating process temperature (～50 °C) for both Ni-based layers, diminutive pre-deformation of as-fabricated structure and strong interlaminar bonding strength are verified by SEM and vibrational test. The resonant frequency of the structure remains unchanged after 10⁹ cycles.     

Growth and electrical properties of highly (0 0 1)-oriented Pb(Zr0.52Ti0.48)O3 thin films on amorphous TiN buffered Si(1 0 0)

Pb(Zr_0.52Ti_0.48)O₃ (PZT) ferroelectric thin films with LaNiO₃ (LNO) as bottom electrodes have been grown on amorphous TiN buffered Si(1 0 0) substrates by pulsed laser deposition. It was found that highly (0 0 1)-oriented LNO films could be obtained even if TiN underlayers were amorphous. XRD analyses showed that the subsequently deposited PZT films were also preferentially (0 0 1)-oriented due to the template effect of the perovskite structured LNO films. Dielectric constant of the PZT thin films remained almost constant with frequency in the range from 10³ to 10⁶ Hz, and tangent loss was as small as 0.02 at high frequencies. The remnant polarization and coercive field of an Au/PZT/LNO capacitor were typically 20 μC/cm² and 30 kV/cm, respectively. C–V and I–V characteristics revealed the capacitance and leakage current variations with applied voltage were asymmetric when the bottom electrode was negatively as well as positively biased, indicating that ferroelectric/electrode interfaces and space charges play an important role in the electrical properties of ferroelectric capacitors.     

Thick film sensors based on laccases from different sources immobilized in polyaniline matrix

Thick film electrode based biosensors containing Trametes versicolor (TvL) and Aspergillus niger (AnL) laccases and Agaricus bisporus tissues (AbT) were developed for the determination of phenolic compounds and the measurement was based on oxygen consumption in relation to analyte oxidation. The electrodeposited organic polymer; polyaniline was used as a matrix for the immobilization in the preparation of thick film sensors. The systems were calibrated for different phenolic substances. A linearity was obtained in concentration range between 0.4 and 6.0 μM phenol, 0.2 and 1.0 μM catechol, 2.0 and 20.0 μM l-DOPA for TvL based biosensor; for AnL based enzyme electrode 0.4 and 4.0 μM phenol, 0.4 and 15 μM catechol, 0.4 and 6.0 μM l-DOPA; for AbT electrode 1.0 and 10 μM phenol, 0.4 and 1.6 μM catechol, 1.0 and 10 μM l-DOPA, respectively, in the response time of 300 s. Furthermore, as well as sample application and accuracy, optimum pH, temperature and thermal stabilities of the proposed systems were also detected.     

An uncooled optically readable infrared imaging detector

This paper presents a design and fabrication of bi-material micro-cantilever array (focal plane array, FPA) made of silicon nitride (SiN_x) and gold (Au) for uncooled optical readout infrared (IR) imaging system, in which silicon (Si) substrate is removed. Compared with the conventional thermal imaging detectors where the FPA must be put in high vacuum, IR thermal images can be obtained even though the cantilever array is placed in the atmosphere. The reason is the elimination of air gap (∼2 μm) between the cantilever beam and substrate, which introduces the air conduction of high temperature gradient. The preliminary experimental results with the micro-cantilever array of 140 × 98 elements and a 12-bit charge-coupled device (CCD) indicate that objects at temperature of higher than 120 °C can be detected and the noise-equivalent temperature difference (NETD) is ∼7 K. Also, the experimental results are well accordant with the thermomechanical analysis of designed micro-cantilever array.     

Computational assessment of several hydrogen-free high energy compounds

Tetrazino-tetrazine-tetraoxide (TTTO) is an attractive high energy compound, but unfortunately, it is not yet experimentally synthesized so far. Isomerization of TTTO leads to its five isomers, bond-separation energies were empolyed to compare the global stability of six compounds, it is found that isomer 1 has the highest bond-separation energy (1204.6 kJ/mol), compared with TTTO (1151.2 kJ/mol); thermodynamic properties of six compounds were theoretically calculated, including standard formation enthalpies (solid and gaseous), standard fusion enthalpies, standard vaporation enthalpies, standard sublimation enthalpies, lattice energies and normal melting points, normal boiling points; their detonation performances were also computed, including detonation heat (Q, cal/g), detonation velocity (D, km/s), detonation pressure (P, GPa) and impact sensitivity (h₅₀, cm), compared with TTTO (Q = 1311.01 J/g, D = 9.228 km/s, P = 40.556 GPa, h₅₀ = 12.7 cm), isomer 5 exhibites better detonation performances (Q = 1523.74 J/g, D = 9.389 km/s, P = 41.329 GPa, h₅₀ =  28.4 cm).