Structural investigation of nanocrystalline diamond/amorphous carbon composite films

Nanocrystalline diamond/amorphous carbon (NCD/a-C) composite films have been prepared by microwave plasma chemical vapor deposition (MWCVD) from methane/nitrogen mixtures. The complex nature of the coatings required the application of a variety of complementary analytical techniques in order to elucidate their structure. The crystallinity of the samples was studied by selected-area electron diffraction (SAED). The diffraction patterns revealed the presence of diamond crystallites within the films. From the images taken by transmission electron microscopy (TEM) the crystallite size was determined to be on the order of 3–5 nm. The results were confirmed by X-ray diffraction (XRD) measurements exhibiting broad (111) and (220) peaks of diamond from which the average size of the crystallites was calculated. The grain boundary width is 1–1.5 nm as observed by TEM images which corresponds to a matrix volume fraction of about 40–50%. This correlates very well with the crystalline phase content of about 50% in the films estimated from their density (2.75 g/cm³ as determined by X-ray reflectivity). The bonding structure of the composite films was studied by electron energy loss spectroscopy (EELS) in the region of carbon core level. The spectra were dominated by a peak at 292 eV indicating the diamond nature of the investigated films. In addition, the spectra of NCD/a-C films possessed a shoulder at 284 eV due to the presence of a small sp² bonded fraction. This phase was identified also by X-ray photoelectron spectroscopy (XPS). The sp²/sp³ ratio was on the order of 10% as determined by deconvolution of the C1s XPS peak.     

Bioproperties of nanocrystalline diamond/amorphous carbon composite films

Nanocrystalline diamond/amorphous carbon (NCD/a-C) nanocomposite films have been deposited by microwave plasma chemical vapour deposition (MWCVD) from CH₄/N₂ mixtures. The films have been thoroughly characterized by a variety of methods with respect to their composition, morphology, structure and bonding environment. Thereafter, the bioproperties of these films have been investigated. Tests with osteoblast-like cells and pneumocytes proved that the NCD/a-C films are not cytotoxic. In addition, exposure of the films to a simulated body fluid revealed that they are bioinert. Further experiments addressed the question whether biomolecules such as RNA or proteins bind unspecifically on the surfaces of NCD/a-C films. By means of atomic force microscopy (AFM) and scanning force spectroscopy measurements it was established that, in contrast to control experiments with mica and glass, no interaction between the nanocrystalline diamond and either RNA or protein molecules took place. The results of these experiments concerning the biologically relevant properties of NCD/a-C films are discussed in view of possible future applications, e.g. as a material for the immobilization of biomolecules and their characterization by AFM measurements and related techniques.     

Transmission electron microscopy study of diamond nucleation and growth on smooth silicon surfaces coated with a thin amorphous carbon film

Amorphous carbon (a-C) films with high contents of tetrahedral carbon bonding (sp³) were synthesized on smooth Si(100) surfaces by cathodic arc deposition. Before diamond growth, the a-C films were pretreated with a low-temperature methane-rich hydrogen plasma in a microwave plasma-enhanced chemical vapor deposition system. The evolution of the morphology and microstructure of the a-C films during the pretreatment and subsequent diamond nucleation and initial growth stages was investigated by high-resolution transmission electron microscopy (TEM). Carbon-rich clusters with a density of ∼10¹⁰ cm⁻² were found on pretreated a-C film surfaces. The clusters comprised an a-C phase rich in sp³ carbon bonds with a high density of randomly oriented nanocrystallites and exhibited a high etching resistance to hydrogen plasma. Selected area diffraction patterns and associated dark-field TEM images of the residual clusters revealed diamond fingerprints in the nanocrystallites, which played the role of diamond nucleation sites. The presence of non-diamond fingerprints indicated the formation of Si–C-rich species at C/Si interfaces. The predominantly spherulitic growth of the clusters without apparent changes in density yielded numerous high surface free energy diamond nucleation sites. The rapid evolution of crystallographic facets in the clusters observed under diamond growth conditions suggested that the enhancement of diamond nucleation and growth resulted from the existing nanocrystallites and the crystallization of the a-C phase caused by the stabilization of sp³ carbon bonds by atomic hydrogen. The significant increase of the diamond nucleation density and growth is interpreted in terms of a simple three-step process which is in accord with the experimental observations.     

Low temperature growth of highly transparent nanocrystalline diamond films on quartz glass by hot filament chemical vapor deposition

Highly transparent and hard nanocrystalline diamond (NCD) films were prepared on quartz glass by hot filament chemical vapor deposition (HFCVD). The effects of total gas pressure, substrate's temperature, and concentration of CH₄ on the grain size, surface's roughness and hardness, growth rate, as well as the optical properties of NCD films were investigated. The results indicated that with a low total gas pressure and high CH₄ concentration, high frequency of secondary nucleation can be obtained. In addition, low substrate temperature can increase the rate of the hydrogen atom etched sp² graphite carbon in the film, yielding a smooth surface of NCD films and very high sp³ content. Under optimized conditions, the hardness can be enhanced up to 65 Gpa, with 80% maximum transmittance in the visible light region. The aforementioned reaction platform outcomes a 1.2 μm thickness of NCD coating with a low root-mean-square (r.m.s.) surface roughness around 12–13 nm and a high growth rate around 1 μm/h. The influences of the total gas pressure, substrate's temperature, and CH₄ concentration for growing NCD films were also discussed in this paper.     

Investigation of the nucleation and growth mechanisms of nanocrystalline diamond/amorphous carbon nanocomposite films

Nucleation and growth, but especially the development of the morphology of nanocrystalline diamond/amorphous carbon (NCD/a-C) nanocomposite films have been investigated by systematic variation of three important parameters, namely the deposition time, the growth rate, and the substrate pre-treatment used to enhance the nucleation density. The films have been characterized, among others, by scanning electron microscopy, atomic force microscopy, and Fourier transform infrared spectroscopy. It is shown that, by successive addition of ultradispersive diamond powder to the suspension of nanocrystalline diamond powder in n-pentane used for the ultrasonic pre-treatment, the nucleation density can be enhanced by two orders of magnitude from 1 · 10⁸ cm^− 2 to > 1 · 10¹⁰ cm^− 2. This reduces the thickness required to achieve closed films from 1 µm to 100 nm. However, once coalescence of the individual nodules emerging from the nucleation sites has taken place the films loose “memory” of the nucleation step and start to develop the typical NCD morphology consisting of larger features with diameters of some hundreds of nm which are in turn composed of much smaller features. Irrespective of the feature size and of the parameters used, the films of this investigation possess AFM rms roughnesses of 9–13 nm, indicating that rms values are not sufficient to characterize NCD surfaces.     

Temperature influence on the interlayer and surface morphology of diamond coating on 3D porous titanium substrates

Nanocrystalline (NCD) and/or microcrystalline (MCD) diamond films grown on three-dimensional porous titanium (Ti) substrate were obtained by hot filament chemical vapor deposition (HFCVD) technique. The morphology variation of diamond films grown on porous three-dimensional titanium substrate was studied at four different deposition temperatures to investigate their influence on nucleation density. Scanning electron microscopy images depicted the continuous change from microcrystalline diamond grains with a random crystallographic orientation, at 500 °C and 600 °C, to a cauliflower-like structure for deposits at 700 °C and 800 °C. Visible Raman spectroscopy confirmed the good quality of diamond films and revealed that the amount of amorphous carbon increased associated to the film morphology changes from MCD to NCD. X-ray diffraction analyses, performed both through θ–2θ scans and at grazing incidence angle, allowed the investigation of the crystallographic properties and structural evolution of the different film/substrate interface phases, such as TiC(111), TiC(200) and TiH₂. The results revealed that the temperature enhanced the nucleation sites for diamond growth.     

Hardness of nanocomposite a-C:Si films deposited by magnetron sputtering

Hydrogen-free a-C:Si films with Si concentration from 3 to 70 at.% were prepared by magnetron co-sputtering of pure graphite and silicon at room temperature. Mechanical properties (hardness, intrinsic stress), film composition (EPMA and XPS) and film structure (electron diffraction, Raman spectra) were investigated in dependence on Si concentration, substrate bias and deposition temperature. The film hardness was maximal for ∼ 45 at.% of Si and deposition temperatures 600 and 800 °C. Reflection electron diffraction indicated an amorphous structure of all the films. Raman spectra showed that the films in the range of 35–70 at.% of Si always contain three bands corresponding to the Si, SiC and C clusters. Photoelectron spectra showed dependency of Si–C bond formation on preparation conditions. In the films close to the stoichiometric SiC composition, the surface and sub-surface carbon atoms exhibited dominantly sp³ bonds. Thus, the maximal hardness was observed in nanocomposite a-C:Si films with a small excess of carbon atoms.     

Structural and optical properties of diamond and nano-diamond films grown by microwave plasma chemical vapor deposition

We compare structural and optical properties of microcrystalline and nanocrystalline diamond (MCD and NCD, respectively) films grown on mirror polished Si(100) substrates by microwave plasma chemical vapor deposition. The films were characterized by SEM, Raman spectroscopy, XRD, and AFM. Optical properties were obtained from transmittance and reflectance measurements of the samples in the wavelength range of 200–2000 nm. Raman spectrum of the MCD film exhibits a strong and sharp peak near 1335 cm⁻¹, an unambiguous signature of cubic crystalline diamond with weak non-diamond carbon bands. Along with broad non-diamond carbon bands, Raman spectra of NCD films show features near 1140 cm⁻¹, the intensity of which is significantly higher in the film grown at 600°C compared to the NCD film grown at higher temperature. The Raman feature near 1140 cm⁻¹ is related to the calculated phonon density of states of diamond and has been assigned to nanocrystalline or amorphous phase of diamond. XRD patterns of the MCD film show sharp peaks and NCD films show broad features, corresponding to cubic diamond. The rms surface roughness of the films was observed to be approximately 60 nm for MCD film that reduced substantially to 17 and 34 nm in the NCD films grown at 600 and 700°C, respectively. Tauc's optical gap for the diamond film is found to be approximately 5.5 eV. NCD grown at 700°C has a high optical absorption coefficient in the whole spectral region and the NCD film grown at 600°C shows very high transmittance (∼78%) in the near IR region, which is close to that of diamond. This indicates that the NCD film grown at 600°C has the potential for applications as optical windows since its surface roughness is significantly low as compared to the MCD film.     

Real-time monitoring,growth kinetics and properties of carbon based materials deposited by sputtering

The nucleation stages of growth of carbon-based materials such as amorphous carbon (a-C) and carbon nitride (a-CN_x) films control the bonding configuration, sp² and sp³ formation, N concentration in a-CN_x films and consequently their final properties. Thus, in order to obtain insights into the deposition mechanisms, the study of growth kinetics by applying real-time monitoring is required. We present here, the development of a-C and a-CN_x thin-films by conventional and unbalanced magnetron sputtering, studied by in situ spectroscopic ellipsometry (SE) and multi-wavelength ellipsometry (MWE) in the energy region 1.5–5.5 eV. SE and MWE were used to monitor the deposition processes and to study the films properties. The MWE provides the ability for simultaneous acquisition of the dielectric function, in 16 different wavelengths distributed in the VIS-UV energy region and to investigate the nucleation and growth stages, the deposition rate and films composition, as well as their optical properties during deposition. The results deduced either by real-time MWE monitoring, or by the analysis of in situ SE and MWE data, for the carbon based materials prepared by the above techniques, were certified by X-ray reflectivity studies and were correlated to various mechanisms taking place during film growth (e.g. diffusion, surface adsorption, chemical reactions, etc.), which were investigated by applying a phenomenological model of growth kinetics.     

Effect of deposition voltage on the microstructure of electrochemically deposited hydrogenated amorphous carbon films

Hydrogenated amorphous carbon (a-C:H) films were deposited on Si substrates by electrolysis in a methanol solution at ambient pressure and a low temperature (50 °C), using various deposition voltages. The influence of deposition voltage on the microstructure of the resulting films was analyzed by visible Raman spectroscopy at 514.5 nm and X-ray photoelectron spectroscopy (XPS). The contents of sp³ bonded carbon in the various films were obtained by the curve fitting technique to the C1s peak in the XPS spectra. The hardness and Young’s modulus of the a-C:H films were determined using a nanoindenter. The Raman characteristics suggest an increase of the ratio of sp³/sp² bonded carbon with increasing deposition voltage. The percentage of sp³-bonded carbon is determined as 33–55% obtained from XPS. Corresponding to the increase of sp³/sp², the hardness and Young’s modulus of the films both increase as the deposition voltage increases from 800 V to 1600 V.     

Investigation of the initial growth of ultrananocrystalline diamond films by multiwavelength Raman spectroscopy

The initial growth phase of ultrananocrystalline diamond/amorphous carbon nanocomposite films (UNCD/a-C) has been investigated by scanning electron microscopy, atomic force microscopy and especially Raman spectroscopy. As due to resonance effects Raman spectra of carbon materials strongly depend on the excitation wavelength, a multiwavelength analysis has been performed with λ_exc ranging from the UV region (325 nm) over the visible range (488 and 514 nm) to the IR region (785 nm). In addition, a set of measurements has been performed with a confocal Raman microscope, i.e. depth resolved, with a wavelength of 532 nm. The samples investigated were deposited with constant parameters, the deposition time being the only parameter varied, resulting in film thicknesses from 100 to 500 nm. It turned out that the diamond fraction and also the grain boundary material do not vary during that stage whereas there are slight but distinct changes of the nature of the amorphous matrix which reflect, among others, in a shift of the graphite-related G band to higher wavenumbers and in an increase of the ratio of D and G bands with increasing film thickness. These changes are discussed in terms of the above mentioned resonance effects; the major changes are a transition of hydrogen containing sp² chains to hydrogen-free condensed sp² rings when the material is no longer in the surface region of the films but becomes incorporated within the film bulk.     

Effects of plasma treatments on the nitrogen incorporated nanocrystalline diamond films

The nitrogen incorporated nanocrystalline diamond (NCD) films were grown on n-silicon (100) substrates by microwave plasma enhanced chemical vapor deposition (MPECVD) using CH₄/Ar/N₂ gas chemistry. The effect of surface passivation on the properties of NCD films was investigated by hydrogen and nitrogen-plasma treatments. The crystallinity of the NCD films reduced due to the damage induced by the plasma treatments. From the crystallographic data, it was observed that the intensity of (111) peak of the diamond lattice reduced after the films were exposed to the nitrogen plasma. From Raman spectra, it was observed that the relative intensity of the features associated with the transpolyacetylene (TPA) states decreased after hydrogen-plasma treatment, while such change was not observed after nitrogen-plasma treatment. The hydrogen-plasma treatment has reduced the sp²/sp³ ratio due to preferential etching of the graphitic carbon, while this ratio remained same in both as-grown and nitrogen-plasma treated films. The electrical contacts of the as-grown films changed from ohmic to near Schottky after the plasma treatment. The electrical conductivity reduced from ~ 84 ohm^– 1 cm^− 1 (as-grown) to ~ 10 ohm^– 1 cm^− 1 after hydrogen-plasma treatment, while the change in the conductivity was insignificant after nitrogen-plasma treatment.     

The effect of negative bias pulse on the bonding configurations and properties of DLC films prepared by PBII with acetylene

The effect of negative bias pulse applied to substrate on the bonding configurations and properties of diamond-like carbon (DLC) films prepared by plasma-based ion implantation (PBII) with acetylene were investigated. The research results show that as the plasma density is 10⁹ cm⁻³ and the negative bias pulses applied to substrate decrease from 50 to 10 kV, the Raman spectra of the carbon films all possess the most dominant characterizations of typical a-C:H [J. Robertson, Mater. Sci. Eng., R 37 (2002) 129-281.], the positions and FWHM for G and D peaks vary no distinguished, but the ratio ID/IG decreases monotonically, as the negative bias pulse decreasing to 5 kV, the Raman spectrum possesses rather strong photoluminescence characterized the polymer-like phase. The variation of Raman spectra for plasma density 10⁸ cm⁻³ is analogous to that of the plasma density 10⁹ cm⁻³. The binding energies of XPS C1s peak decrease from the side of diamond peak to the side of graphite peak with the increasing of negative bias pulse from 10 to 50 kV monotonously, the sp³ content in the films increases with the decreasing in the negative bias pulse. With the increasing of negative bias pulse from 0 to 50 kV, the surface electric resistance of the films decreases monotonously, but the surface nanohardness at first increases with the increasing of the negative bias pulse from 0 to 10 kV, then decreases with the increasing of the negative bias pulse from 10 to 50 kV monotonously. These properties of the films are corresponding to the bonding configurations of the films. The reason for the highest sp³ fractions of the a-C:H films formed at higher effective ion energy per C atom in PBII is discussed in this paper.     

Surface composition,bonding, and morphology in the nucleation and growth of ultra-thin,high quality nanocrystalline diamond films

The morphology, composition, and bonding character (carbon hybridization state) of continuous, ultra-thin (thickness ∼ 60 nm) nanocrystalline diamond (NCD) membranes are reported. NCD films were deposited on a silicon substrate that was pretreated using an optimized, two-step seeding process. The surface after each of the two steps, the as-grown NCD topside and the NCD underside (revealed by etching away the silicon substrate) is examined by X-ray PhotoElectron Emission spectroMicroscopy (X-PEEM) combined with X-ray absorption near edge structure (XANES) spectroscopy, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The first step in the seeding process, a short exposure to a hydrocarbon plasma, induces the formation of SiC at the diamond/Si interface along with a thin, uniform layer of hydrogenated, amorphous carbon on top. This amorphous carbon layer allows for a uniform, dense layer of nanodiamond seed particles to be spread over the substrate in the second step. This facilitates the growth of a homogeneous, continuous, smooth, and highly sp³-bonded NCD film. We show for the first time that the underside of this film possesses atomic-scale smoothness (RMS roughness: 0.3 nm) and > 98% diamond content, demonstrating the effectiveness of the two-step seeding method for diamond film nucleation.     

Nucleation and growth of diamond films on single crystal and polycrystalline tungsten substrates

Silicon has been the most widely studied substrate for the nucleation and growth of CVD diamond films. However, other substrates are of interest, and in this paper, we present the results of a study of the biased nucleation and growth of diamond films on bulk single and polycrystalline tungsten. Diamond films were nucleated and grown, using a range of bias and reactor conditions, and characterized by Raman spectroscopy and scanning electron microscopy (SEM). High-quality (100) textured films (Raman FWHM<4 cm⁻¹) could be grown on both single and polycrystalline forms of the tungsten substrate. On carefully prepared substrates, by varying the bias treatment, it was possible to determine the nucleation density over a 4–5 order range, up to ∼10⁹ cm⁻². Raman measurements indicated that the diamond films grown on bulk tungsten exhibited considerable thermal stress (∼1.1 GPa), which, together with a thin carbide layer, resulted in film delamination on cooling. The results of the study show that nucleation and growth conditions can be used to control the grain size, nucleation density, morphology and quality of CVD diamond films grown on tungsten.     

Residual stress relief of hard a-C films though buckling

To characterize the adhesive failure mode in amorphous-carbon (a-C) films, and to explore the effects of stress relief mechanism on the mechanical properties of the films, the microstructure and the morphologies of the buckled and peeled a-C films were characterized by various techniques, including transmission electron microscopy (TEM), scanning electron microscopy (SEM), Raman spectrum and X-ray photoelectron spectroscopy (XPS). Results indicated that there is obvious buckling between the stress relieved a-C films and Si substrates, and the development of the buckling blister was derived from the residual compressive stress. The as-deposited a-C films voluntarily buckled along the film growth direction above Si substrate when film thickness reached a certain size, and became more and more remarkable, resulting in eventual peeling. These buckling and peeling processes can relieve the residual stress of the a-C films by eliminating the mechanical restriction of Si substrates. The corresponding sp² hybridization transformation and the reconfiguring graphitic phase were detected in the stress relived a-C films, which can induce buckling and spalling in the a-C films.     

The carbon nitride films prepared at various substrate temperatures by vacuum cathodic arc method

Carbon nitride films have been grown by vacuum cathodic arc method in the substrate temperature range of 100–500 °C. The bonding structure of the films was investigated by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and infrared (IR) spectroscopy. With increasing substrate temperature, the films indicate various characteristics. At 100 °C, it can be described as a network similar to DLC in which aromatic sp²C phase is cross-linked by sp³C phase. Between 200 and 400 °C, with increasing substrate temperature the films become graphitized and the sp²CN phase increases, meanwhile the non-aromatic sp²CN phase appears at the edges of aromatic clusters in planar position as well as in out-of-planar regions. While at 500 °C the non-aromatic sp²CN phase almost comes to the same level as the aromatic sp²CN phase. So in the network of the film the aromatic sp²C phase is cross-linked by the non-aromatic sp²C phase. Based on the variation of the microstructure of the films, a comprehensive assignment pattern for the XPS C1s and N1s at different substrate temperature is proposed. In addition, the interpretation of p electron band in valence band spectra at various substrate temperatures is also discussed.     

Effect of metallic seed layers on the properties of nanocrystalline diamond films

Three metallic films (Mo, Ti and W) were sputtered on Si substrates and ultrasonically seeded in diamond powder suspension. Nanocrystalline diamond (NCD) films were deposited using a dc arc plasma jet CVD system on the seeded metallic layers and, for comparison, a seeded Si without any metallic layer. The effect of metallic seed layers on the nucleation, microstructure, composition and mechanical properties of NCD films was investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy and nanoindentation. We found that the metallic seed layers were transformed into metallic carbide or/and metallic silicide during the deposition of NCD films at high temperature. Adding metallic seed layers had no obvious effect on the bonding structure of the NCD films but significantly improved their surface roughness and mechanical properties. The NCD film deposited on W seed layer displays the lowest root-mean-square roughness of 19 nm while that on Ti seed layer has the highest compactness, hardness and elastic modulus.     

Synthesis of diamond using ultra-nanocrystalline diamonds as seeding layer and their electron field emission properties

A modified nucleation and growth process was adopted so as to improve the electron field emission (EFE) properties of diamonds films. In this process, a thin layer of ultra-nanocrystalline diamonds (UNCD), instead of bias-enhanced-nuclei, were used as nucleation layer for growing diamond films in H₂-plasma. The morphology of the grains changes profoundly due to such a modified CVD process. The geometry of the grains transform from faceted to roundish and the surface of grains changes from clear to spotty. The Raman spectroscopies and SEM micrographs imply that such a modified diamond films consist of UNCD clusters (~ 10–20 nm in size) on top of sp³-bonded diamond grains (~ 100 nm in size). Increasing the total pressure in CVD chamber deteriorated the Raman structure and hence degraded the EFE properties of the films, whereas either increasing the methane content in the H₂-based plasma or prolonged the growth time improved markedly the Raman structure and thereafter enhanced the EFE properties of diamond films. The EFE properties for the modified diamond films can be turned on at E₀ = 11.1 V/μm, achieving EFE current density as large as (J_e) = 0.7 mA/cm² at 25 V/μm applied field.     

Guided assembly of nanoparticles on electrostatically charged nanocrystalline diamond thin films

We apply atomic force microscope for local electrostatic charging of oxygen-terminated nanocrystalline diamond (NCD) thin films deposited on silicon, to induce electrostatically driven self-assembly of colloidal alumina nanoparticles into micro-patterns. Considering possible capacitive, sp² phase and spatial uniformity factors to charging, we employ films with sub-100 nm thickness and about 60% relative sp² phase content, probe the spatial material uniformity by Raman and electron microscopy, and repeat experiments at various positions. We demonstrate that electrostatic potential contrast on the NCD films varies between 0.1 and 1.2 V and that the contrast of more than ±1 V (as detected by Kelvin force microscopy) is able to induce self-assembly of the nanoparticles via coulombic and polarization forces. This opens prospects for applications of diamond and its unique set of properties in self-assembly of nano-devices and nano-systems.