不同基底的ITO薄膜制备及其光电性能

采用脉冲磁控溅射法在石英基底和柔性聚对苯二甲酸乙二醇酯(PET)上分别制备了氧化铟锡(ITO)透明导电薄膜。通过X射线衍射仪(XRD)、扫描电镜(SEM)对不同基底上ITO薄膜的微观结构及表面形貌进行了对比分析,并且研究了溅射气压、溅射时间和衬底温度等工艺条件对不同基底上制备的ITO薄膜的光透过率和光电性能的影响。结果表明,相同工艺条件下,石英玻璃上ITO薄膜的最佳方块电阻为13.3Ω,可见光透过率为91%;PET上ITO薄膜的最佳方块电阻为15Ω,可见光透过率为85%。二者相比,石英基底上ITO薄膜的光电性能更佳,膜表面的致密度、均匀性更好。     

磁控溅射法制备的不同衬底上的TiO_2薄膜

利用射频磁控溅射方法,分别在改变氧气含量和沉积时间的条件下在ITO玻璃、Si和Al/ITO玻璃衬底上沉积了TiO2薄膜,并利用拉曼光谱表征了2种条件下的TiO2薄膜的结构.研究表明：衬底材料、氧气含量以及沉积时间明显地影响了TiO2薄膜的结构.随着氧气含量的降低,沉积在ITO玻璃衬底上的TiO2薄膜由锐钛矿和金红石的混合结构转变为单一的金红石结构,而沉积在Si衬底上的TiO2薄膜的结构没有改变,并保持单一的金红石结构;随着沉积时间的增加,Al/ITO玻璃衬底上的TiO2薄膜由金红石结构转变为锐钛矿结构.     

Preparation and Properties of a-Si：H Thin Films Deposited on Different Substrates

The effects of different substrates on the structure and hydrogen evolution from a-Si： H thin films deposited by plasma enhanced chemical vapour deposition were studied, as well as the similar films exposed to an hydrogen plasma. Spectroscopic ellipsometry and hydrogen evolution measurements were used to analyse the effects of the substrate and hydrogen plasma on the films microstructure, thickness, hydrogen content, hydrogen bonding and hydrogen evolution. The hydrogen evolution spectra show a strong substrate dependence. In particular on crystalline silicon substrate, the formation of bubbles was observed. For different substrates, hydrogen plasma treatments lightly affected the hydrogen evolution spectra. These results indicate that the action of hydrogen in a-Si：H was modified by the nature of the substrate.     

FTO上溅射ITO薄膜及光电性能

通过脉冲磁控溅射法在掺氟氧化锡透明导电薄膜(FTO)基底上制备了氧化铟锡(ITO)透明导电薄膜。研究了溅射时间和衬底温度对FTO基底上制备的ITO薄膜的光透过率和电性能的影响。采用SZT-2四探针测试仪测量样品表面的电阻,用扫描电镜(SEM)对样品进行表征。结果表明,随着溅射时间的增加以及衬底温度的升高,以FTO导电薄膜为基底制备的氧化铟锡(ITO)透明导电膜的电阻逐渐减小,而后基本保持不变。在基片温度为400℃、溅射时间为45min时,方块电阻最小值达到1.5Ω。     

Effects of Substrate Temperatures on the Structure and UV-shielding Properties of TiO2-CeO2 Films Deposited on Glass by Radio-frequency Magnetron Sputtering

TiO2-CeO2 films were deposited on soda-lime glass substrates at varied substrate temperatures by rf magnetron sputtering using 40% molar TiO2-60% molar CeO2 ceramic target in Ar：O2=95：5 atmosphere.The structure,surface composition,UV-visible spectra of the films were measured by scanning electron microscopy and X-ray diffraction,and X-ray photoelectron spectroscopy,respectively.The experimental results show that the films are amorphous,there are only Ti^4＋ and Ce^4＋ on the surface of the films,the obtained TiO2-CeO2 films shou a good uniformity and high densification,and the films deposited on the glass can shield ultraviolet light without significant absorpition of visible light,the films deposited on substrates at room temperature and 220℃ absorb UV effectively.     

Influence of methane on hot filament CVD diamond films deposited on high-speed steel substrates with WC-Co interlayer

Diamond films were deposited on high-speed steel substrates by hot filament chemical vapor deposition (HFCVD) method. To minimize the early formation of graphite and to enhance the diamond film adhesion, a WC-Co coating was used as an interlayer on the steel substrates by high velocity oxy-fuel spraying. The effects of methane content on nucleation, quality, residual stress and adhesion of diamond films were investigated. The results indicate that the increasing methane content leads to the increase in nucleation density, residual stress, the degradation of quality and adhesion of diamond films. Diamond films deposited on high-speed steel (HSS) substrate with a WC-Co interlayer exhibit high nucleation density and good adhesion under the condition of the methane content initially set to be a higher value (4%, volume fraction) for 30 min, and then reduced to 2% for subsequent growth at pressure of 3 kPa and substrate temperature of 800 °C.     

残余应力对压头诱导的硬质薄膜断裂机制的影响

近年来,随着制备工艺的革新,硬质薄膜作为保护涂层已有了广泛的应用.在实际使用过程中,硬质涂层经常承受接触载荷作用.薄膜在接触载荷下易产生环形裂纹,从薄膜的表面起裂并扩展到界面,从而影响材料的可靠性和稳定性.同时,硬质薄膜中的残余应力的存在也将直接影响薄膜的服役周期.基于内聚力模型,采用有限元方法模拟来探究残余应力对压头诱导的硬质薄膜/韧性基底中薄膜本身断裂的影响规律.给出在不同残余应力下薄膜发生环形裂纹的起裂半径、裂纹间距、临界压入深度以及临界载荷,进而对运用压痕法测量薄膜的断裂韧性和工程应用提供指导.     

Influence of different substrates on the electrochromic property of polyaniline films

The polyaniline (PANI) films doped with complex acid (sulfuric acid and sulfosalicylic acid) were prepared using the potentiostatic method on bare nickel flake (NF) and flexible polyethylene terephthalate (PET)/indium tin oxide (ITO) substrates. The contents of the PANI films, surface elements, electrochromic property and electrical conductivity were characterized by energy dispersive X-ray spectrometer (EDS), cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The experimental results show that differences exist among cycle stability, redox reversibility and response time of polyaniline films on these two kinds of substrates, but the electrochromic phenomenon of the PANI films is in substantial agreement. The equilibrium transmittance spectra in the visible region (400–800 nm) for the PANI film on flexible PET/ITO substrate was obtained at different applied potential from −0.4 to 1.5 V. The results show that the transmittance of the PANI film by applying voltage is adjustable in a row and has excellent electrochromic performance.     

Preparation of MgO films as buffer layers by laser-ablation at various substrate temperatures

MgO thin films were deposited on Si(100) substrates by laser ablation under various substrate temperatures (Tsub),expecting to provide a candidate buffer layer for the textured growth of functional perovskite oxide films on Si substrates.The effect of Tsub on the preferred orientation,crystallinity and surface morphology of the films was investigated.MgO films in single-phase were obtained at 473-973 K.With increasing Tsub,the preferred orientation of the films changed from (200) to (111).The crystallinity and surface morphology was different too,depending on Tsub.At Tsub=673 K,the MgO film became uniform and smooth,exhibiting high crystallinity and a dense texture.     

基于溶胶凝胶法ITO薄膜材料的制备与表征

基于溶胶凝胶法制备了掺铟二氧化锡（ITO）薄膜,探讨聚乙二醇（PEG）、退火温度、退火过程氧气浓度等因素对ITO薄膜性能的影响。实验结果表明：在相同实验条件下,添加PEG能够降低ITO薄膜表面粗糙度,退火温度会改变ITO薄膜的结晶度,提高含锡量和氧浓度会增加ITO薄膜的电阻率。本研究为ITO埋栅结构气敏传感器制备提供了实验基础。     

Nanodiamond films deposited at moderate temperature on pure titanium substrate pretreated by ultrasonic scratching in diamond powder suspension

Nanocrystalline diamond （NCD） film deposition on pure titanium and Ti alloys is extraordinarily difficult because of the high diffusion coefficient of carbon in Ti, the large mismatch in their thermal expansion coefficients, the complex nature of the interlayer formed during diamond deposition, and the difficulty to achieve very high nucleation density. In this investigation, NCD films were successfully deposited on pure Ti substrate by using a novel substrate pretreatment of ultrasonic scratching in a diamond powder-ethanol suspension and by a two-step process at moderate temperature. It was shown that by scratching with a 30-μm diamond suspension for 1 h, followed by a 10-h diamond deposition, a continuous NCD film was obtained with an average grain size of about 200 nm. Detailed experimental results on the preparation, characterization, and successful deposition of the NCD films on Ti were discussed.     

Reactive magnetron sputtering of germanium carbide films at different substrate temperature

To explore the relationship between the chemical bonding and mechanical properties for germanium carbide (Ge1-xCx) films,the Ge1-xCx films are prepared via reactive magnetron sputtering in a mixture of CH4/Ar discharge,and their composition,chemical bonding and hardness were investigated as a function of substrate temperature (Ts). The results show that Ts remarkably influences the chemical bonding of Ge1-xCx film,which results in a pronounced change in the film hardness. As Ts increases from ambient (60 ℃) to 500 ℃,the Ge content in the film gradually increases,which promotes forming sp3 C-Ge bonds in the film at the expense of sp2C-C bonds. Furthermore,it is found that with increasing Ts the fraction of C-H bonds in Ge1-xCx film gradually decreases,which is attributed to an enhancement in the desorption rate of C-Hn(n=1,2,3) species decomposed from methane. The transition from graphite-like sp2 C-C to diamond-like sp3C-Ge bonds as well as the reduction in C-H bonds in the film with increasing Ts promotes forming the compact three-dimensional network structure,which significantly enhances the hardness of the film from 5.8 to 10.1 GPa.     

Influence of argon gas pressure on the ZnO:Al films deposited on flexible TPT substrates at room temperature by magnetron sputtering

Aluminium doped ZnO thin films(ZnO︰Al) were deposited on transparent polymer substrates at room temperature by rf magnetron sputtering method from a ZnO target with Al2O3 of 2.0 wt%. Argon gas pressure varied from 0.5 Pa to 2.5 Pa with radio frequency power of 120 W. XRD results showed that all the ZnO︰Al films had a polycrystalline hexagonal structure and a (002) preferred orientation with the c-axis perpendicular to the substrate. The grain sizes of the films were 6.3-14.8 nm.SEM images indicated the ZnO︰Al film with low Argon gas pressure was denser and the deposition rate of the films depended strongly on the Argon gas pressure, increasing firstly and then decreasing with increasing the pressure. The highest deposition rate was 5.2 nm/min at 1 Pa. The optical transmittance of the ZnO︰Al films increased and the blue shift of the absorption edge appeared when the Argon gas pressure increased. The highest transmittance of obtained ZnO︰Al films at 2.5 Pa was about 85% in the visible region. The electrical properties of the films were worsened with the increase of the Argon gas power from 1 Pa to 2.5 Pa. The resistivity of obtained film at 1.0 Pa was 2.79×10-2 Ω·cm.     

热处理对ITO薄膜的显微结构及光电特性的影响

以硝酸铟和四氯化锡为源材料,无水乙醇和乙酰丙酮为溶剂,采用溶胶—凝胶工艺制备出纳米晶ITO透明导电薄膜.采用XRD和SEM分析了薄膜的物相和显微形貌,采用面电阻测量仪和分光光度计测量了薄膜的方阻和可见光透过率.实验结果表明,随着热处理温度升高,晶化程度提高,组织逐渐均匀致密,晶粒长大,700℃热处理时薄膜晶化趋于完善.同时,方阻减小而可见光透过率增加.经过700℃热处理、厚度为400nm的ITO膜的方阻约300Ω/□,可见光透过率>80%.     

采用Cu/Ti过渡层沉积金刚石薄膜刀具的界面结构

研究了硬质合金基底上Cu/Ti作过渡层化学气相沉积(CVD)金刚石薄膜的界面特性.利用激光Raman谱分析了过渡层不同生长阶段金刚石薄膜的质量的影响.采用SEM、EDS对金刚石薄膜硬质合金刀具横截面的结构进行了研究.结果表明:基体中的Co被Cu/Ti作过渡层有效的抑制住;Cu向基体内的扩散改善了基体的性能,提高了界面层金刚石薄膜的质量;Ti的引入促进了金刚石的形核,减少了界面处晶粒间的空隙,提高了金刚石薄膜与基体表面的实际接触面积.     

采用Cu／Ti过渡层沉积金刚石薄膜刀具的界面结构

研究了硬质合金基底上Cu／Ti作过渡层化学气相沉积(CVD)金刚石薄膜的界面特性。利用激光Ra—man谱分析了过渡层不同生长阶段金刚石薄膜的质量的影响。采用SEM、EDS对金刚石薄膜硬质合金刀具横截面的结构进行了研究。结果表明：基体中的Co被Cu／Ti作过渡层有效的抑制住；Cu向基体内的扩散改善了基体的性能，提高了界面层金刚石薄膜的质量；Ti的引入促进了金刚石的形核，减少了界面处晶粒间的空隙，提高了金刚石薄膜与基体表面的实际接触面积。     

ITO薄膜特性及发展方向

铟锡氧化物(ITO)具有一系列的独特性能，近年来引起人门广泛关注。为了把握这一发展趋势，本文结合国际发展背景，首先对近几年来我国在ITO薄膜研究领域的发展状况从结构与机理、薄膜特性以及应用三个方面给予回顾。其次，对今后的发展予以展望。     

Deposition of crackless freestanding diamond films on Mo substrates with Zr interlayer

The Mo substrate with Zr interlayer,namely composite substrate,was employed to solve the problem of crack formation in the freestanding diamond film deposition.Freestanding diamond films deposited on the composite substrates by the direct current arc plasma jet chemical vapor deposition(CVD) method were investigated with scanning electron microscopy(SEM),X-ray photoelectron spectroscopy (XPS),X-ray diffraction(XRD),and Raman spectroscopy.In addition,the stress distribution during the large area freestand...     

WC—Co硬质合金上高质量金刚石薄膜的制备

采用微波等离子体化学气相沉积法在硬质合金基体上制备金刚石薄膜,研究了铜过渡层和酸蚀脱钴两种基体前处理工艺以及在施加铜过渡层的情况下,不同的沉积气压和基片温度对金刚石薄膜的质量的影响。结果表明,在施加铜过渡层后,在适中的沉积条件下（沉积气压6．0kPa,基片温度约为780度）可得到质量较好的金刚石薄膜。