医用分子筛制氧机校准方法研究

正YY0298-1998《医用分子筛制氧设备通用规范》对医用分子筛制氧机(以下简称"制氧机")的氧浓度、氧产量、水分含量等计量指标都有着明确的要求,其计量性能准确与否将直接影响到患者的安全与临床治疗效果。但由于没有现行有效的制氧机检定规程或校准规范,不能开展相应的检定/校准工作。为了保证     

富氧分子筛选型会战动态

湘潭化工研究所与湘潭锰矿协作,进行了富氧分子筛的选型会战,完成了0～100％氧浓度自动记录式磁氧仪的调试,在我国分子筛选型技术中成功地采用了此项连续自动分析工具,得出了“最佳富氧效率”、“最佳切换”等数据及其求取的数学物理方法,为筛选富氧分子筛建立了综合评价的依据。按照研究得出的“最佳切换”进行操作,可以发挥原有分子筛制氧设备的生产能力,因而可以降低氧气成本,减少设备的重量和体积。     

林德公司分子筛变压吸附制氧装置应用简况

<正>联邦德国林德公司分子筛制氧设备,从1972年开始投入生产。根据1984年10月在林德公司访问所得资料,仅将用于生物废水处理的分子筛制氧设备作一介绍。1972~1986年林德公司已供货和准备交货的废水处理设备共202套。其中采用分子筛变压吸附制氧的设备共84台;其他采用传统低温设备制氧的50台,液氧槽供氧的27台,氧气管道输送的27台。氧气均作废水氧曝用。用空气作气曝的仅10     

新颖的磁性制氧法

<正>目前人们通常所知的制氧法有电解法,深冷法和分子筛法等三种。最近出现了一种新颖的磁性制氧法,它与分子筛制氧法一样,可获得低压的富氧气．但与分子筛制氧法相比,该法设备简单,操作容易,无需更换分子筛,而且能容易地把氧与空气中的氦、氢等气体分离出来。这种方法在日本、美国、苏联及英国等陆续有专利申请。     

6000m~3/h空分设备分子筛受冲击的分析及处理

凌源钢铁集团公司氧气厂的 60 0 0ｍ3/ｈ空分设备由杭氧生产 ,为微机控制分子筛吸附流程。此设备自 1997年 7月投产以来 ,运转稳定 ,产品氧、氮、氩的产量、质量等指标均达到或超过设计指标。但在同年的 12月 2 1日 ,发生了一次因误操作而使分子筛受冲击的故障。1　故障原因及现象1997年 12月 2 1日 ,由于信号干扰 ,在工控机上出现空压机停车的假信号 ,从而使空压机放空阀突然放空 ,使压缩空气不能进入空分塔。由于联锁操作 ,喷淋、分馏系统停车。后在复车过程中使分子筛受冲击。12月 2 2日 ,翻看交接班记录时 ,有关人员发现 ,有一条关于 2 …     

开利空分再次签约金马工业空分设备合同

<正>10月19日消息,河南开利空分设备集团有限公司再次与滦县金马工业有限公司签订了一套KDON(Ar)-23000/23000/720m~3/h空分设备合同。这是继今年年初金马工业12000空分设备开车成功后的又一次合作。据了解,该套制氧设备由填料塔和前段分子筛预净化(分子筛加活性氧化铝)、增压透平膨胀机、氧外压缩流程的制氧装置组成。即采用常温分子筛预净化、空气增压透平膨胀机提供所需冷量、双塔精馏,同时设有全精馏无氢制氩     

淄钢VSAO900型变压吸附制氧设备投产

山东淄博钢铁股份有限公司ＶＳＡＯ 90 0型变压吸附制氧设备 ,由开封空分集团有限公司技术承包设计和建设。该装置采用超低压吸附 ,真空脱附卧式三塔流程 ,应用上海锦中分子筛有限公司高新技术成果ＶＰ2 0 0 0型富氧专用变压吸附分子筛及ＥＧＡ变压吸附专用高强度活性氧化铝。该设备具有能耗低、氧氮分离快、易脱附、产氧浓度高、开停方便等特点 ,已于2 0 0 0年 5月 31日投产成功。经工况考核 ,已全面达到和超过设计指标 :富氧产量 96 0 (设计 90 0 )ｍ3 /ｈ ,富氧浓度 94～ 95(设计≥ 93) %Ｏ2 ,氧提取率 5 2 (设计≥ 48) %。目前 ,ＶＳＡ…     

60000m~3/h空分设备分子筛吸附器的开发与设计

介绍杭氧设计制造的宝钢60000m3/h空分设备分子筛吸附器的设计特点和应用的新技术,以及所采取的分子筛再生节能设计和节能效果,分析大型空分设备分子筛吸附器操作工艺以及管线的改进措施。     

《YY/T0298—1998医用分子筛制氧设备通用技术规范》发布实施

<正>为加快我国对用变压吸附(PSA)技术制取医用氧气的开发研究步伐,严格规范医用分子筛制氧设备在我国的生产和使用,国家医药管理局于1995年6月下文委托军事医学科学院卫生装备研究所起草制订医用分子筛制氧设备的国家医药行业标准。     

80000m~3/h等级空分设备分子筛纯化系统的开发与设计

简介广西杭氧80000 m3/h等级特大型空分空设备分子筛纯化系统的主要技术参数和结构,介绍在分子筛吸附器结构、吸附剂节能以及分子筛再生流程方面所采取的优化设计和应用的新技术,使分子筛纯化系统的运行更加节能、可靠。     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Magnetic,electrical and thermal studies on the V1−xMox02

The monoclinic-to-tetragonal structure transition of oxides V_1?xMo_x0₂ with $\text{0≤}\text{x}\text{≤0.20}$ has been studied by means of DTA, X-ray diffraction, magnetic susceptibility (powder samples) and electrical conductivity (single crystals) measurements within the temperature region 80 K to 400 K. A linear decrease of the transition temperature of 11 K per atom % Mo was observed. The magnetic susceptibility of the low temperature phase was found to be temperature independent paramagnetic for all preparations. Electrical conductivity measurements on the same phase showed crystals with $\text{x}\text{? 0.04}$ to be semiconducting, while a metallic behavior was observed in the region $\text{0.10 ?}\text{x}\text{? 0.14}$.     

n-PbTep+−Pb1−xSnxTe heterojunctions prepared by a modified hot wall technique

$\text{n-PbTe}\text{p}{}^{\mathrm{+}}\text{?}\text{Pb}{}_{\mathrm{1?x}}\text{Sn}{}_{\mathrm{x}}\text{Te}$ heterojunctions with a long wavelength spectral cutoff (λ_c ≈ 6 μm) were prepared using the double-channel hot wall technique. The electrical and photoelectrical properties of the heterojunctions at 77, 197 and 300 K were investigated. Detectors with R_oA equal to 170 Ω cm² and a quantum efficiency of 25–40% were obtained. Reasons for the shift of the long wavelength spectral cutoff of the heterojunctions towards shorter wavelengths are given.     

Reactive plasma deposited SixCyHz films

Si_xC_yH_z films have been prepared at 200°C by reactive plasma deposition from SiH₄ and CH₄ diluted in helium in a tubular reactor. These films have a ratio s (equal to $\text{Si}\text{(}\text{Si+C}\text{))}$ ranging from 0.2 to 0.8, a refractive index ranging from 1.96 to 2.6 and an optical energy band gap in the range 2.7-2.2 eV. The total quantity of hydrogen in the film is 40% when s=0.5. Infrared analysis shows that these films have large fractions of homonuclear bonds and that this material is best described as a polymer. Mass spectrometric measurements of the gaseous products formed in the SiH₄-CH₄-He plasma have been performed and the results are related to the composition of the deposited layers.     

Core-current-enhanced domain-wall pinning in nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon

We have studied the influence of surface fields H/sub p/ (generated by either direct or alternating core current) on soft magnetic properties of amorphous and nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon. While in an amorphous ribbon the coercive field H/sub c/ decreases with H/sub p/, in the same optimally annealed ribbon (H/sub c/=1.3 A/m, M/sub m//spl ap/M/sub s/) H/sub c/ increases with H/sub p/ for all the explored types of H/sub p/ (static and dynamic with different phases with respect to that of the magnetizing field H). The unexpected increase of H/sub c/ in nanocrystalline ribbon is associated with the influence of H/sub p/ on the surface and main (inner) domain structure. Here, we develop a model that takes into account this influence and explains the experimental results.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.