氮对重掺锑直拉硅中氧沉淀的影响

通过在不同条件下退火,研究氮杂质对重掺锑硅(HSb- Si)中氧沉淀的影响.实验结果表明,在高温单步退火(10 0 0～115 0℃)和低高两步退火(6 5 0℃+10 5 0℃)后,掺氮HSb- Si中与氧沉淀相关的体微缺陷的密度都要远远高于一般的HSb- Si.这说明在HSb- Si中,氮能分别在高温和低温下促进氧沉淀的生成.因此,可以认为与轻掺直拉硅一样,在HSb- Si中,氮氧复合体同样能够生成,因而促进了氧沉淀的形核.实验结果还表明氮的掺入不影响HSb硅中氧沉淀的延迟行为.     

氮对重掺锑直拉硅中氧沉淀的影响

通过在不同条件下退火,研究氮杂质对重掺锑硅(HSb-Si)中氧沉淀的影响.实验结果表明,在高温单步退火(1000～1150℃)和低高两步退火(650℃+1050℃)后,掺氮HSb-Si中与氧沉淀相关的体微缺陷的密度都要远远高于一般的HSb-Si.这说明在HSb-Si中,氮能分别在高温和低温下促进氧沉淀的生成.因此,可以认为与轻掺直拉硅一样,在HSb-Si中,氮氧复合体同样能够生成,因而促进了氧沉淀的形核.实验结果还表明氮的掺入不影响HSb硅中氧沉淀的延迟行为.     

锗对重掺硼直拉硅中氧沉淀的影响

通过单步长时间退火(650～1150℃/64h)和低高两步退火(650℃/16h 1000℃/16h和800℃/4～128h 1000℃/16h),研究锗对重掺硼硅(HB-Si)中氧沉淀的影响.实验结果表明,经过退火后,掺锗的重掺硼硅中与氧沉淀相关的体微缺陷密度要远远低于一般的重掺硼硅,这表明锗的掺人抑制了重掺硼硅中氧沉淀的生成,并对相关的机制做了初步探讨.     

锗对重掺硼直拉硅中氧沉淀的影响

通过单步长时间退火(650～1150℃/64h)和低高两步退火(650℃/16h+1000℃/16h和800℃/4～128h+1000℃/16h),研究锗对重掺硼硅(HB-Si)中氧沉淀的影响.实验结果表明,经过退火后,掺锗的重掺硼硅中与氧沉淀相关的体微缺陷密度要远远低于一般的重掺硼硅,这表明锗的掺人抑制了重掺硼硅中氧沉淀的生成,并对相关的机制做了初步探讨.     

Ramping热退火直拉重掺锑硅衬底片的增强氧沉淀

本文报道了一种改进本征吸杂技术——低温短时热退火工艺,以增强本征吸杂效果．在本征吸杂工艺的低温热退火中,用连续的线性缓慢升温（Ｒａｍｐｉｎｇ）退火替代常规的长时间低温恒温退火,应用于直拉（ＣＺ）重掺Ｎ型硅衬底片,明显增加了氧沉淀等体微缺陷密度,这些高密度氧沉淀物在随后ＩＣ器件热工艺中继续长大,成为稳定的高效本征吸杂中心．从经典的成核沉淀理论,讨论了Ｒａｍｐｉｎｇ热退火重掺硅衬底片增强氧沉淀机理．     

重掺直拉硅对重金属Cr的内吸杂能力

研究了重掺硼(HB)、重掺砷(HAs)以及重掺锑(HSb)直拉(CZ)硅片对重金属Cr的内吸杂能力.将不同程度(～1012cm-2,～1014cm-2)沾污Cr的硅片在N2下进行常规的高-低-高三步退火,并由全反射X射线荧光光谱(TRXF)测量退火前后样品表面Cr的含量.结果表明在三种重掺硅中,HB硅片的内吸杂能力最强,HAs硅片次之,HSb硅片最低.     

重掺直拉硅对重金属Cr的内吸杂能力

研究了重掺硼( HB)、重掺砷( HAs)以及重掺锑( HSb)直拉( CZ)硅片对重金属Cr的内吸杂能力.将不同程度(～10 1 2 cm- 2 ,～10 1 4 cm- 2 )沾污Cr的硅片在N2 下进行常规的高-低-高三步退火,并由全反射X射线荧光光谱( TRXF)测量退火前后样品表面Cr的含量.结果表明在三种重掺硅中,HB硅片的内吸杂能力最强,HAs硅片次之,HSb硅片最低     

氮对直拉硅片中氧沉淀分布的影响

研究了氮在退火过程中对直拉硅片中的氧沉淀分布的影响.实验结果表明,三步退火后在掺氮硅片截面形成特殊的M形的氧沉淀密度分布,即表面形成没有氧沉淀的洁净区(DZ) ,体内靠近DZ区域形成高密度、小尺寸的氧沉淀,而在硅片的中心处形成低密度、大尺寸的氧沉淀.分析认为,由于在第一步高温退火过程中氮在硅片表面外扩散,同时在硅片体内促进氧沉淀,改变了间隙氧的分布,从而导致在随后的热处理过程中氧沉淀的特殊分布行为     

氮对直拉硅片中氧沉淀分布的影响

研究了氮在退火过程中对直拉硅片中的氧沉淀分布的影响.实验结果表明,三步退火后在掺氮硅片截面形成特殊的M形的氧沉淀密度分布,即表面形成没有氧沉淀的洁净区(DZ),体内靠近DZ区域形成高密度、小尺寸的氧沉淀,而在硅片的中心处形成低密度、大尺寸的氧沉淀.分析认为,由于在第一步高温退火过程中氮在硅片表面外扩散,同时在硅片体内促进氧沉淀,改变了间隙氧的分布,从而导致在随后的热处理过程中氧沉淀的特殊分布行为.     

快速热处理对重掺As硅单晶中氧沉淀的影响

对重掺As硅片进行快速热处理,发现重掺As硅片中氧沉淀行为与快速热处理温度、保温时间和降温速度有很大的关系.随着快速热处理温度的升高、降温速度的增大和保温时间的延长,氧沉淀的密度增大.最后对影响的机理进行了讨论.     

半导体硅材料最新发展现状

概述了现代微电子工业的发展状况及对半导体硅材料的新要求,叙述了近年来国际半导体多晶硅和单晶硅材料的发展状况与趋势.     

InP and Si metal-oxide semiconductor structures fabricated using oxygen plasma assisted wafer bonding

In this paper, InP metal-oxide-semiconductor (MOS) structures are fabricated by transferring thermally grown SiO₂ to InP from oxidized Si wafers using oxygen plasma assisted wafer bonding followed by annealing at either 125°C or at 400°C. Well-defined accumulation and inversion regions in recorded capacitance-voltage (C-V) curves were obtained. The long-term stability was comparable to what has been previously reported. The structures exhibited high breakdown fields, equivalent to thermally grown SiO₂-Si MOS structures. The transferring process was also used to fabricate bonded Si MOS structures.     

Impact of Transition-Metal Contamination on Oxygen Precipitation in Czochralski Silicon Under Rapid Thermal Processing

研究了快速热处理工艺下直拉单晶硅中过渡族金属铜、镍对内吸杂工艺中氧沉淀形成规律的影响.实验结果表明:在快速热处理工艺下,间隙铜对氧沉淀几乎没有影响,铜沉淀却能显著地促进氧沉淀的形成;而间隙镍或镍沉淀对氧沉淀的形成都没有影响.基于实验结果并结合氧沉淀的形核理论,对金属铜、镍对氧沉淀的影响机理进行了解释.     

我国半导体硅材料的发展现状

叙述了我国半导体硅材料的发展现状及与国外相比存在的差距 ,提出了发展我国硅材料的一些建议     

Surface treatment effects on atomic diffusion in Si explained without self interstitials

Many recent discussions of surface treatment effects on atomic diffusion in Si have explained these largely in terms of effects attributed to Si self interstitials. However, we have shown by our straight forward Monte Carlo (VIDSIM) simulation of diffusion of Au into Si according to the “kick-out” mechanism of Seeger that this mechanism is in fact completely incapable of explaining the two-sided, “U shaped” profile of substitutional Au which results from a one sided in-diffusion of Au. We have shown that if Auinterstitials can displace Si at any appreciable rate, then the Au substitutional profile must decrease monotonically from source side to far side. We noted that this is strong evidence that Si self interstitials play no role in thermal processes in Si. Here we show that the surface treatment effects often attributed to Si self interstitials can be naturally explained without them. Supported in part by U.S. AFOSR-89-0309.     

硅变容管的发展趋势

总结了硅变容管的发展趋势,离子注入化,电容配对中测化,集成化,低压化,超小型化,片状化和应用广泛化。     

硅衬底GaN基LED的研究进展

与蓝宝石衬底相比，硅衬底具有低成本、大面积、高质量、导电导热性能好等优点，普遍认为使用Si片作GaN薄膜衬底有可能实现光电子和微电子的集成，因此Si基GaN的研究受到了广泛关注。本文回顾了Si衬底GaN基LED的研究进展，同时简要介绍了在Si衬底上制备GaN基LED的实验结果，及研制出工作电压为3．6V、串联电阻为31Ω、输出功率近1mW的Si衬底GaN基蓝光LED。     

Effects of S,Si, or Fe dopants on the diffusion of Zn in InP during MOCVD

Diffusion of Zn in InP during growth of InP epitaxial layers has been investigated in layer structures consisting of Zn-InP epilayers grown on S-InP and Fe-InP substrates, and on undoped InP epilayers. The layers were grown by metalorganic chemical vapour deposition (MOCVD) atT = 625° C andP = 75 Torr. Dopant diffusion profiles were measured by secondary ion mass spectrometry (SIMS). At sufficiently high Zn doping levels ([Zn] ≥8 × 10¹⁷ cm⁻³) diffusion into S-InP substrates took place, with accumulation of Zn in the substrate at a concentration similar to [S]. Diffusion into undoped InP epilayers produced a diffusion tail at low [Zn] levels, probably associated with interstitial Zn diffusion. For diffusion into Fe-InP, this low level diffusion produced a region of constant Zn concentration at [Zn] ≈ 3 × 10¹⁶ cm⁻³, due to kick-out of the original Fe species from substitutional sites. We also investigated diffusion out of (Zn, Si) codoped InP epilayers grown on Fe-InP substates. The SIMS profiles were characterised by a sharp decrease in [Zn] at the epilayer-substrate interface; the magnitude of this decrease corresponded to that of the Si donor level in the epilayer. For [Si] ≫ [Zn] in the epilayer no Zn diffusion was observed; Hall measurements indicated that the donor and acceptor species in those samples were electrically active. All these results are consistent with the presence of donor-acceptor interactions in InP, resulting in the formation of ionised donor-acceptor pairs which are immobile, and do not contribute to the diffusion process.     

锗对CZSi中氧沉淀成核和沉淀形态的影响

CZSi中掺入等价元素锗 ,能影响低温退火时氧沉淀过饱和成核的成核速率与密度。在70 0℃退火时 ,抑制杆状氧沉淀的生成 ,在 90 0℃退火时 ,锗对氧沉淀的形态和长大几乎没有影响。实验表明 ,锗并不作为氧沉淀的成核中心 ,氧沉淀及其衍生的二次缺陷中也不包含锗。文中对锗影响氧沉淀的成核与形态进行了简要的讨论。