激光化学气相沉积非晶硅

本文报道了CO_2激光化学气相沉积非晶硅的实验结果,硅薄膜的沉积速率与硅烷气压、基片温度和激光光强密切有关。 利用不同方法测量了硅薄膜样品的各种特性,证实了薄膜确为非晶硅。 作者也研究了激光化学沉积非晶硅的机理,并给出了理论讨论以解释实验结果。     

激光物理气相沉积Al_2O_3薄膜

介绍了激光物理气相沉积设备的研制及利用所研制的设备和CO2气体激光器在Ni与SiO2基片上沉积Al2O3薄膜的方法．探索了激光物理气相沉积Al2O3薄膜的工艺,分析了Al2O3膜层的结构并初步测试了膜层的绝缘性、高温抗氧化性及耐腐蚀性．     

激光诱导制备纳米SiC粉体

以硅烷Sih4和乙炔C2H2为反应原料，采用激光诱导化学气相沉积制备(LICVD)理想纳米SIC粉体．用化学分析、X射线衍射(XRD)、透射电子显微镜(TEM)及比表面积(BET)等分析测试手段对粉体进行了表征，结果表明粉体中SiC含量高于98％，平均粒径为20nm，晶体结构为β—SiC粉体产率大于200g／h，粉体中含氧量低于1％。     

化学气相沉积二硫化钼薄膜的研究进展

总结了二硫化钼薄膜的特性及其在力学、光电、润滑和催化性能方面的广泛应用。归纳了目前化学气相沉积(CVD)技术制备二硫化钼薄膜的主要方法,包括钼(或钼化合物)的硫化,钼前驱体与硫前驱体的直接反应和硫化物的热分解。讨论了化学气相沉积制备二硫化钼薄膜工艺中成核剂、基板和前驱体对薄膜生长过程的影响,分析了二硫化钼和其他硫族化合物生成合金,与其它单层二维材料形成异质结构方面的研究现状,并对该领域今后的研究方向进行了展望。     

激光诱导等离子体淀积薄膜过程的研究

用激波理论推出了激光诱导等离子体化学气相淀积过程中两个重要参量薄膜面积、膜淀积速率的表达式。分析了激光强度、气体压强、基片温度对淀积过程的影响，为最佳淀积条件的选取提供了理论依据论。     

等离子体辅助热丝化学气相沉积金刚石膜

采用等离子辅助热丝化学气相沉积 (PAHFCVD)装置进行了金刚石薄膜的制备。并运用X射线衍射 (XRD)和扫描电子显微镜 (SEM)测试手段对沉积的金刚石薄膜进行了观察分析。在甲烷与氢气体积比为 2∶98、基体温度为 80 0℃、等离子体偏压 40 0V、沉积气压 4kPa的沉积条件下可获得晶形完整的金刚石膜 ,其沉积速率可达 1 1 μm·h- 1 。     

化学气相沉积法硅薄膜的制备及其性能

运用化学气相沉积技术在不锈钢表面沉积了一层致密的硅薄膜,研究了沉积温度及硅烷气体压力对硅薄膜性能的影响。对沉积的硅薄膜进行了EDS能谱分析,通过SEM扫描电镜对硅薄膜微观形貌进行表征,并对沉积硅薄膜的不锈钢样品进行电化学分析,研究了硅薄膜对不锈钢抗腐蚀性能的影响。结果表明,化学气相沉积温度为390℃、硅烷气压为10kPa时金属表面形成的硅薄膜防腐性能最佳。     

化学气相沉积制备碳化钨纳米晶薄膜

采用氟化钨(WF6)和甲烷(CH4)为前驱体,采用等离子体增强化学气相沉积(PECVD)方法制备具有纳米晶结构的碳化钨薄膜.采用SEM,XRD,EDS等方法表征了碳化钨薄膜的形貌、晶体结构和化学组成.通过表征,表明在前驱体混合气体中的甲烷与氟化钨气体的流量比(碳钨比)为20,基底温度为800 ℃的条件下得到的碳化钨薄膜是由直径为20～35 nm的圆球状纳米晶构成.通过分析影响薄膜的晶体结构、化学组成的因素后,认为要得到具有纳米晶结构的碳化钨薄膜,主要应控制前驱体气体中的碳钨比以及基底温度.     

化学气相沉积技术的研究及在无机材料制备中的应用进展（续完）

在上期中对化学气相沉积（ＣＶＤ）技术的基本原理、特点等进行了论述。本文对化学气相沉积（ＣＶＤ）技术在无机材料的合成与制备中的应用，尤其是在制备金刚石薄膜及最近几年发展起来的梯度功能材料方面的应用进行了阐述；对ＣＶＤ技术在材料制备应用方面的发展趋势及所面临的课题也进行了简要论述。     

新型射频等离子化学气相沉积系统

设计了一种射频电极作为基板支架的射频等离子体化学气相沉积系统.其温度可达700℃,负偏压是可调的.并以沉积的TiN膜的取向为例说明了系统的工作情况.     

射频磁控溅射制备的CdSe薄膜的光电学性质

采用射频磁控溅射技术在不同溅射功率下制备了CdSe薄膜,并利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、能量色散X射线光谱仪(EDAX)、紫外可见近红外(UV-VIS-NIR)分光光度计和霍尔效应测试仪研究了溅射功率对薄膜的结构和光电学性质的影响.研究表明：增加溅射功率有利于增强薄膜的结晶性能;随着溅射功率的增加,薄膜的光学带隙和电阻率逐渐减小,载流子浓度逐渐增加,即薄膜的光电性能不断增强.该研究结果可为CdSe薄膜在光电器件方面的应用提供参考.     

Preparation and magnetic properties of Co-P thin films

Magnetic Co-P thin films were prepared by electroless deposition. The experiment results show that the film thickness has a significant influence on the coercivity. While the film thickness varied from 300 nm to 5 μm,the coercivity dropped sharply from 45.36 to 22.28 kA/m. As the film thickness increased further,the coercivity varied slowly. When the thickness of the film was 300 nm,the deposited film could realize the coercivity as high as 45.36 kA/m,and the remanent magnetization as high as 800 kA/m .The ...     

Microstructure and electrical properties of La2O3-doped ZnO-based varistor thin films by sol-gel process简

Microstructure and electrical properties of La2O3-doped ZnO-Bi2O3 thin films prepared by sol-gel process have been investigated. X-ray diffraction shows that most diffraction peaks of ZnO are equal, and the crystals of ZnO grow well. Scanning electron microscopy and atomic force microscopy results indicate that the samples have a good structure and lower surface roughness. The nonlinear V-I characteristics of the films show that La2O3 develops the electrical properties largely and the best doped content is 0.3% lanthanum ion, with the leakage current of 0.25 mA, the threshold field of 150 V/mm and the nonlinear coefficient of 4.0 in detail.     

热处理对ITO薄膜的显微结构及光电特性的影响

以硝酸铟和四氯化锡为源材料,无水乙醇和乙酰丙酮为溶剂,采用溶胶—凝胶工艺制备出纳米晶ITO透明导电薄膜.采用XRD和SEM分析了薄膜的物相和显微形貌,采用面电阻测量仪和分光光度计测量了薄膜的方阻和可见光透过率.实验结果表明,随着热处理温度升高,晶化程度提高,组织逐渐均匀致密,晶粒长大,700℃热处理时薄膜晶化趋于完善.同时,方阻减小而可见光透过率增加.经过700℃热处理、厚度为400nm的ITO膜的方阻约300Ω/□,可见光透过率>80%.     

Nano-sized Thin Films Fabricated by Ion Beam Sputtering and Its Properties

Nanoscale thick amorphous Ni-Cr alloy thin films were fabricated by low-energy ion beam sputtering technology; then the as-deposited samples experienced rapid thermal process to realize the transformation from amorphous to crystalline state. The film thickness was measured with a-stylus surface profiler, the structure and the compositions of the films were confirmed by low angle X-ray diffraction and scanning auger electron microprobe respectively, and the surface topography was characterized by scanning electron microscope and scanning probe microscope. Electrical property of the films was measured by fourpoint probe. The experimental results illustrate that the combined processes of ion beam sputtering and rajid thermal process are effective for fabrication nanoscale Ni-Cr alloy thin film with good properties.     

化学液相沉积法制备Al_xO_y薄膜

给出了用化学液相沉积法(CLPD)制备Al_xO_y/Si薄膜的方法,室温下生长2h得到Al_xO_y/Si薄膜,其退火温度为1000℃,退火时间2h。对薄膜的显微硬度、成分和结构进行了检测和分析。结果表明,薄膜的显微硬度在退火前为5202.0N/mm~2,退火后为14533.5N/mm~2,增加近3倍;高温退火去掉了膜内的OH~(-1),同时使薄膜晶化,晶体薄膜的O/Al比例为1.3。     

化学液相沉积法制备AlxOy薄膜

给出了用化学液相沉积法(CLPD)制备A1xOy／Si薄膜的方法，室温下生长2h得到A1xOy／Si薄膜，其退火温度为1000℃，退火时间2h．对薄膜的显微硬度、成分和结构进行了检测和分析．结果表明，薄膜的显微硬度在退火前为5202．0N／mm^2，退火后为14533．5N／mm^2，增加近3倍；高温退火去掉了膜内的0H^-1，同时使薄膜晶化，晶体薄膜的O／A1比例为1．3．     

Gold Nanoparticulate Thin Films Fabricated by the Electrostatic Self—Assembly Process

Gold colloids were prepared by citrate-induced reduction of hydrogen tetrachlorourate, and gold nanoparticles were electrostatically self-assembled with poly (diallyldimethylammonium chloride) into multilayer thin films on silicon and quartz substrates. The particulate thin films were characterized by UV-vis spectroscopy, surface enhanced Raman scattering, atomic force microscopy and resistivity measurements. Due to the interparticle coupling between individual gold particles, an obvious collective particle plasmon resonance was observed on UV-vis spectra, and the particulate thin films exhibited a strong SERS effect. For multilayer thin films with a high particle coverage on substrates, resistivity of the order of 10⁻⁴Ω·cm was yielded. Yu Hai-hu This research was financially supported by China Scholarship Council and the Natural Science Foundation of Hubei Province (Project 2000J002)     

Al-induced Lateral Crystallization of Amorphous Si Thin Films by Microwave Annealing

Al-induced lateral crystallization of amorphous silicon thin films by micr owave annealing is investigated,The erystallized Si films are examined by optical microscopy,Raman spectroscopy ,transimission electron microscopy and transmission electron diffraction micrography.After microwave annealing at 480 ℃ for 50min the amorphous Si is completely cystallized with lagrge grains of main (111) orientation,The rate of lateral crystallization is 0.04μm/min,This process,labeled MILC-MA ,not only lowers the temperature but also reduces the time of crystallization.The crystallization.mechanism during microwave annealing and the electrical properies of polycrystalline Si thin films are analyzed.This MILC-MA process has potentila application in large area electronics.     

Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

ZnO,as a wide-band gap semiconductor,has recently become a new research fo-cus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy(L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition(PLD) . Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond(ns) pulsed laser abla-tion of ZnO ceramic target,the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.