晶体管、MOS器件

Y2002-63318-37 03277794H-SiC的1.8KV,3.8A双极结型晶体管=1.8KV,3.8A bipolar junction transistors in 4H-SiC[会,英]/Ryu,S.-H.＆Agarwal,A.K.//2001 IEEE Proceedings ofthe 13th International Symposium on Power Semiconduc-tor Devices＆ICs.—37-40     

晶体管、MOS 器件

Y2002-63306-626 0309486栅极长度为100nm 高电子迁移率晶体管的设计与实现=Design and realization of sub 100nm gate lengthHEMTs[会,英]/Parenty,T.& Bollaert,S.//2001IEEE International Conference on Indiurn Phosphide andRelated Materials.—626～629(E)     

晶体管、MOS器件

0603328 铜空气桥低噪声GaAs PHEMT用WNx扩散势垒= Use of WNx as diffusion barrier for copper airbridged low noise GaAs PHEMT[刊,英]／H．C．Changj,E．Y． Chang／／Electronics Letters．-2003,39(24)．-1763-1764(E)     

晶体管、MOS器件

IELDVD060:9322:29630-107 0600442 热激光激励对n型金属氧化物半导体晶体管的作用= Thermal laser stimulation effects on NMOS transistor [会,英]／Firiti,A．／／Physical and Failure Analysis of Integrated Circuits,2004．IPFA 2004．Proceedings of the 11th International Symposium on the．-107-110(A) IELDVD060:9322:29630-209 0600443 关于低温聚合硅薄膜晶体管设备传输线路脉冲Ⅰ-Ⅴ形     

晶体管、MOS器件

Y2002-63059-475 0210608采用沟道工程对60rim沟道长度垂直MOSFETs的性能优化=Performance optimization of 60nm channellength vertical MOSFETs using channel engineering〔会,     

晶体管、MOS 器件

Y2000-62067-442 0016169用于低功率、高性能处理机核的砷化镓技术=Galliumarsenide technology for low-power high performanceprocessor cores[会,英]/Lachowicz,S.W.& Eshraghi-an,K.//1998 IEEE International Confefence on Phto-electronic and Microelectronic Materials and Devices.—442～445(EC)Y2000-62067-454 0016170高势垒栅与三步掺杂沟道晶体管=A high-barriergate and Tri-step doped channel transistor[会,英]/Liu,W.C.& Pan,H.J.//1998 IEEE InternationalConference on Phtoelectronic and Microelectronle Materi-als and Devices.—454～456(EC)Y2000-62067-486 0016171迢低混乱度量子点接触与量子线中的相关电子现象=Correlated electron phencmena in ultra-low-disorder     

晶体管、MOS器件

0622908采用低温Si技术的Si/SiGe异质结p-MOSFET[刊,中]/李竞春//固体电子学研究与进展．—2006,26 (2)．—162-165(D) 0622909 SiGe沟道pMOSFET阈值电压模型[刊,中]/邹晓//固体电子学研究与进展．—2006,26(2)．—148-151,156 (D) 0622910 4H-SiC衬底AlGaN/GaN HEMTs台面隔离技术的改进[刊,中]/王冲//功能材料与器件学报．—2006,12 (3)．—247-250(G)采用离子注入和ICP干法刻蚀相结合的台面隔离技术提高了4H-SiC衬底AlGaN/GaN HEMTs的直流特性和高频特性。与只采用干法刻蚀进行台面隔离的器件相比,相邻器件有源区之间的泄漏电流减少了两个数量级,栅肖特基泄漏电流在栅漏电压为-40V时由38．5μA减小到1．2μA,截止频率由3．2GHz提高到6．7GHz。分析了器件泄漏电流减小和频率特性提高的原因。参6     

晶体管、MOS 器件

0206014InGaP/GaAs HBT 费米统计律下的效值模拟计算[刊]/彭鹏//功能材料与器件学报.—2001,7(4).—379～383(C)用费米分布函数对 HBT 结构中载流子的分布进行了计算,与常用的玻尔兹曼统计律得到的载流子分布进行了比较分析。同时在热场发射-扩散模型的基础上,用两种方法得到的载流子分布分别对 InGaP/GaAs HBT 进行了数值模拟计算和分析。参7     

晶体管、MOS器件

Y98-61460-14 9915078AlGaAs/GaAs 异质结双极晶体管的可靠性:综述=Re-liability of AlGaAs/GaAs heterojunction bipolar transis-tors:an overview[会,英]/Liou,J.J.//1998 IEEE 2ndInternational Caracas Conference on Devices.Circuits andSystems.—14～21(YG)本文概述了在象蜂窝电话和微波系统这样的很高速传输中日益广泛运用的 AlGaAs/GaAs 异质结双极晶体管(HBT)的可靠性的一些相关问题,主题包括:1.典型 HBT 后老化特征,2.对 HBT 长期电流增益漂移起作用的物理机制,3.HBT 平均失效时间(MTTF)的预测模型,4.非典型 HBT 后老化性能及其物理理解。参17     

晶体管、MOS器件

Y2000-62028-1047 0100246新的双 P 阱横向发射极开关晶闸管=A novel doubleP-well lateral emitter wwitched thyristor[会,英]/Qin,Z.X.& Sankara.E.M.//1999 IEEE 49th ElectronicComponents and Technology Conference.—1047～1050(PC)Y2000-62185-32 0100247退化 P-MOSFET 热载流子电荷抽运电流模拟=Simu-lation of charge pumping current in hot-carrier degraded     

晶体管、MOS器件

Y2002-63306-417 0307166等离子体增强化学汽相沉积形成钝化膜的偏压应力导致 InAlAs/InGaAs/InP HEMTs 隔离退化=Isolationdegradation of InAlAs/InGaAs/InP HEMTs due to biasstress depending on passivation films formed by PCVD[会,英]/Moriguchi,H.& Hoshi,S.//2001 IEEE In-ternational Conference on Indium Phosphide and RelatedMaterials.—417～420(E)     

晶体管、MOS 器件

Y2002-63120-305 0217331SPICE 的功率达林顿晶体管的新电热动态宏观模型=A new electrothermal dynamic macromodel of the powerdarlington transistor for SPICE[会,英]/Zarebski,J.//The IEEE International Symposium on Circuits and Sys-tems Vol.3 of 5.—305～308(HE)     

晶体管、MOS器件

0611539 InGaP/InGaAs双delta掺杂沟道晶体管=InGaP／InGaAs double delta-doped channel transistor[刊,英]／ Hung-Ming Chuang,Shiou-Ying Cheng／／Electronics Letters．-2003,39(13)．-1016-1017(E)     

晶体管、MOS 器件

Y2002-63354-125 0314239使用多偏压 S 参数集的双极晶体管建模=Modelingbipolar transistors using multibias S parameter sets[会,英]/Biondi,T.＆ Palmisano,G.//2001 IEEE Radioand Wireless Conference.—125～128(TE)     

晶体管、MOS器件

Y2002-63084-133 021268240Gb/s 通信系统用的 InP 异质结构双极晶体管制造Fabrication of InP heterostructure bipolar transistorsfor 40Gb/s communication systems[会,英]/Abid,Z.//ICM 2000 Proceedings of the Twelfth International Con-ference on Microeleetronics.—133～136(PE)     

晶体管、MOS器件

Y2000-62078-221 0007501具阶梯式栅结构的射频横向双扩散 MOS 场效应晶体管=RF LOMOS FET with graded gate structure[会,英]/Xu,S & Foo,P.D.//1999 International Sympo-sium on Power Semiconductor Devices and IC's.—221～224(U)     

晶体管、MOS器件

Y2000-62422-22 0103672低功率射频应用中部分耗尽与全耗尽绝缘体上硅MOS 场效应晶体管的比较=Comparison between fully-and partially-depleted SOI MOSFET's for low-power ra-dio-frequency application[会.英]/Rozeau,O.& Jo-maah,J.//1999 IEEE International SOI ConferenceProceedings.—22～23(EC)Y2000-62422-24 0103673绝缘体上硅动态阈值电压 MOS(DTMOS)晶体管高频特性=High frequency characterization of SOI dynamic     

晶体管、MOS器件

0605788 RF测量中MOSFET偏压相关串联电阻提取=MOS- FET bias dependent series resistance extraction from RF measurements[刊,英]/R．Torres-Torres,R．S．Murphy- Arteaga//Electronics Letters．-2003,39(20)．-1476- 1477(E)     

晶体管、MOS器件

0608838结温与热阻制约大功率LED发展〔刊,中〕/余彬海//发光学报.—2005,26(6).—761-766(E)0608839分子束外延生长AlGaN/GaN高电子迁移率晶体管的陷阱光致电离光谱=Photoionisation spectroscopy oftraps in AlGaN/GaN high electron mibility transistorsgrown by molecular beamepitaxy〔刊,英〕/P.B.Klein,J.A.Mittereder//Electronics Letters.—2003,39(18).—1354-1355(E)0608840蓝宝石衬底上Si Ge/Si n-MODFET结构高电子迁移率=High electron mobility in Si Ge/Si n-MODFET struc-tures onsapphire substrates…     

晶体管、MOS器件

Y98-61303-305 9905795无线通信的低噪声场效应晶体管(FET)设计=Lownoise FET design for wireless communications[会,英]/Franca-Neto,L.M.//1997 IEEE International ElectronDevices Meeting.—305～308(AG)本文研究了对适合于无线电通信用的低噪声场效应晶体管(FET)设计的半导体器件的噪声进行显微分析的新方法,包括计算器件噪声性能的计算方法。并将模拟结果同公布的亚微米 CMOS 晶体管的研究结果进行了比较。参5