Monolithic integration of Pb(Zr,Ti)O3 thin film based resonators using a complete dry microfabrication process

Monolithic fabrication of lead zirconate titanate [Pb(Zr,Ti)O₃ or PZT] based thin film resonant devices such as microcantilevers, Lamb wave and bulk acoustic wave resonators are demonstrated. High-performance PZT thin films with a thickness of 2.6 μm are prepared on a silicon on insulator wafer by a sputtering deposition process. A highly selective reactive ion etching process is employed for micro-patterning of PZT, platinum electrodes, and SiO₂ insulation layer. Self-actuation of the PZT microcantilevers is demonstrated and the frequency response is characterized using a laser Doppler vibrometer. The frequency response of the Lamb wave resonator is evaluated by measuring its transmission characteristic using a network analyzer. For a Lamb wave resonator with a length of 240 μm and an interdigital period of 80 μm, the 1st order and 2nd resonance frequencies are 15.3 and 41.8 MHz, respectively.     

Study of residual stress-induced deformation of multilayer cantilever for maskless microplasma etching

In the scanning probe microscopy-based microplasma etching system proposed by our group, the microcantilever probe integrated with microplasma device is a multilayered structure. However, the thin film residual stress generated by microfabrication process may cause undesirable bending deformation of the cantilever. In order to predict and minimize the stress-induced deformation in the cantilever design, we experimentally measure and calculate each thin film stress of the cantilever based on Stoney equation. Then the stress-induced bending deformation of the cantilever is simulated by finite element simulation. By adjusting the thickness of reserved silicon layer of the cantilever, the deflection can be minimized to <5 μm for a 750 μm-length cantilever. Finally the microcantilever probes with different thickness of reserved silicon layer are successfully fabricated by MEMS process. The bending deformation of actual fabricated cantilevers agree well with simulation results, which verifies the feasibility of the cantilever structural design. The results of this paper may lay a foundation for further scanning plasma maskless etching.     

Micromachined ultrasonic transducers based on lead zirconate titanate (PZT) films

The design, fabrication and measuring of piezoelectric micromachined ultrasonic transducers (pMUTs), including the deposition and patterning of PZT films, was investigated. The (100) preferential orientation of PZT film have been deposited on Pt/Ti/SiO₂/Si (100) substrates by modified sol–gel method. PZT film and Pt/Ti electrode were patterned by novel lift-off using ZnO as a sacrificial layer avoiding shortcomings of dry and wet etching methods. pMUT elements have been fabricated by an improved silicon micromachining process and their properties were also characterized. As measured results, the pMUT tends to operate in a standard plate-mode. The receive sensitivity and transmit sensitivity of pMUT element whose active area only has 0.25 mm² are ?218 dB (ref. 1 V/μPa) and 139 dB (ref. 1 μPa/V), respectively.     

Pb-based ferroelectric thin film actuator for optical applications

Novel PZT thin film actuators for optical applications were proposed. Key issues for realizing the actuators such as PZT thin film processes, mechanical properties evaluation of thin films, and design for laminated structure were described. [1 1 1]-oriented PZT films were obtained by anneal/non-anneal sputtering process. Also for PZT dry etching, it was made clear low pressure and low temperature conditions were advantageous for high selectivity and etch rate. ECR etcher was used and etch rate of 1000 A/min and selectivity of 0.56 to photoresist mask were obtained. Young’s modulus and built-in stress of PZT film, measured by load-deflection method, were 72 GPa, −335 MPa respectively. Using these results, calculated deflection of each actuator was on the order of a few microns to 20 microns. It was confirmed that deflection of actuators would be enough for the application.     

基于BOE硅腐蚀现象的硅纳米线制作

介绍一种硅纳米线制作方法.在SOI顶层硅上制作硅纳米梁,通过离子注入形成pnp结构,利用新发现的没有特殊光照时BOE溶液腐蚀pn结n型区域现象,结合BOE溶液氧化硅腐蚀,实现硅纳米线制作.制作完全采用传统MEMS工艺,具有工艺简单,成本低,可控,可靠性好,可批量制作等优点.利用该方法制作出了厚50 nm,宽100 nm的单晶硅纳米线,制作的纳米线可用于一维纳米结构电学性能研究、谐振器研究等.     

Development of novel PZT thin films for active sliders based on head load/unload on demand systems

 Micromachined active sliders based on head load/unload on demand systems is an interesting concept technology for ultra-high magnetic recording density of more than 100 Gb/in². The active sliders that we proposed use PZT thin films as a microactuator and control the slider flying height of less than 10 nm. It is necessary to develop high performance microactuators in order to achieve active sliders operating at very low applied voltage. This paper describes the development of novel PZT thin films for active sliders. The sol–gel fabrication process for PZT thin films is developed and the fundamental characteristics for the PZT thin films are investigated. It is confirmed that the PZT thin films have good ferroelectric properties. Furthermore, novel thin film microactuators are proposed. The feature is that the sol–gel PZT thin films (thickness 540 nm) are deposited on the sputtered PZT thin films (thickness 300 nm) fabricated on bottom Pt/Ti electrodes. Therefore, the novel thin films consist of a thermal SiO₂ layer and the sputtered and sol–gel PZT thin films layers sandwiched with upper Pt and bottom Pt/Ti electrodes on a Si slider material. Fabricating the diaphragm microactuator, the piezoelectric properties for the novel composite PZT thin films are studied. As a result, the piezoelectric strain constant d ₃₁ for the novel PZT thin films is identified to be 130 × 10⁻¹² m/V. This value is higher than conventional monolithic PZT thin films and it is found that the novel composite PZT thin films have the good piezoelectric properties. This suggests the feasibility of realizing active sliders operating at lower voltage under about 10 V. Received: 22 June 2001/Accepted: 17 October 2001     

Micromechanical elements for detection of molecules and molecular design

Photolithographic preparation of thin films and stacks of them were combined with anisotropic silicon etching and free standing film technology in order to realize three dimensional micro components for studies in detection and optimization of biomolecules. A polymer based SFM sensor was developed and tested in the measurement of thin film roughness and in the detection of holes in molecular films as well as in the detection of single DNA molecules. This novolever shows surprisingly high mechanical stability and provides high resolution SFM images of sensible molecules. Experimental arrangements of miniaturized chemical parallel processing for combinatorial and evolutionary synthesis strategies including silicon micro compartment arrays with free standing optical membranes and thin film filters have been proposed and the manufacturing of micro compartment arrays is described.We thank M. Sossna, B. Rau, H. Porwol, I. Menzel, F. Jahn and W. Schubert for technical assistance. The Inst. of Semiconductor Physics Frankfurt/O is acknowledged for CVD-deposition of membrane films. The work on SFM-sensors was supported by the Max-Planck-Gesellschaft. The work on micro compartment arrays was supported by the BMBF (No 0310713)     

A patterning technique of lead zirconate titanate thin film by ultraviolet-light

The patterning technique of Pb(Zr, Ti)O₃ (PZT) thin film is an essential process in device fabrication processes for application in microsensors and microactuators. In this paper, a novel pattern technique is proposed for PZT thin film by UV photolysis processes. PZT thin films were first spin coated on the substrate and exposed by UV light for photolysis step. The UV photolysis step defined exposed and unexposed area by mask, and the pattern will be transferred to PZT thin film. After photolysis, PZT films were placed in non-ionic surfactant to remove unexposed area. Finally, PZT films were sintered at 650 °C in the furnace for crystallization. Experimental results showed that remnant polarization of patterned PZT film by UV photolysis was 21.4 μc cm^?2, which was compared to 17.24 μc cm^?2 by hot plate prolysis. Coercive fields were 45 and 104 kV cm^?1 by UV photolysis and hot plate prolysis, respectively. Dielectric loss was 0.027 by UV photolysis which was much smaller than 0.043 by hot plate prolysis. PZT thin films patterned by UV photolysis showed satisfactory geometries.     

Silicon micromachined hollow microneedles for transdermal liquid transport

This paper presents a novel process for the fabrication of out-of-plane hollow microneedles in silicon. The fabrication method consists of a sequence of deep-reactive ion etching (DRIE), anisotropic wet etching and conformal thin film deposition, and allows needle shapes with different, lithography-defined tip curvature. In this study, the length of the needles varied between 150 and 350 micrometers. The widest dimension of the needle at its base was 250 /spl mu/m. Preliminary application tests of the needle arrays show that they are robust and permit skin penetration without breakage. Transdermal water loss measurements before and after microneedle skin penetration are reported. Drug delivery is increased approximately by a factor of 750 in microneedle patch applications with respect to diffusion alone. The feasibility of using the microneedle array as a blood sampler on a capillary electrophoresis chip is demonstrated.     

Finite element analysis and experiments on a silicon membrane actuated by an epitaxial PZT thin film for localized-mass sensing applications

In this paper, we investigate the performance of a piezoelectric membrane actuated by an epitaxial piezoelectric Pb(Zr_0.2Ti_0.8)O₃ (PZT) thin film for localized-mass sensing applications. The fabrication and characterization of piezoelectric circular membranes based on epitaxial thin films prepared on a silicon wafer are presented. The dynamic behavior and mass sensing performance of the proposed structure are experimentally investigated and compared to numerical analyses. A 1500 μm diameter silicon membrane actuated by a 150 nm thick epitaxial PZT film exhibits a strong harmonic oscillation response with a high quality factor of 110-144 depending on the resonant mode at atmospheric pressure. Different aspects related to the effect of the mass position and of the resonant mode on the mass sensitivity as well as the minimum detectable mass are evaluated. The operation of the epitaxial PZT membrane as a mass sensor is determined by loading polystyrene microspheres. The mass sensitivity is a function of the mass position, which is the highest at the antinodal points. The epitaxial PZT membrane exhibits a mass sensitivity in the order of 10⁻¹² g/Hz with a minimum detectable mass of 5 ng. The results reveal that the mass sensor realized with the epitaxial PZT thin film, which is capable of generating a high actuating force, is a promising candidate for the development of high performance mass sensors. Such devices can be applied for various biological and chemical sensing applications.     

TiO_2/V_2O_5双层薄膜的TMA气敏特性研究

报道了以TiCl4 和V2 O5为源 ,采用等离子增强化学气相沉积 (PECVD)和溶胶 -凝胶 (sol-gel)技术制备了TiO2 /V2 O5双层薄膜 ,将该薄膜沉积在带有金梳状电极的陶瓷管和硅片上 ,进行了X射线衍射(XRD)分析 ,并且测量其对三甲基胺 (TMA)的气敏特性。结果发现该双层薄膜对TMA具有高灵敏度、良好的选择特性和快速的响应恢复特性。     

Design of bossed silicon membranes for high sensitivity microphone applications

This paper deals with the design optimization of new high sensitivity microphones in silicon on insulator (SOI) technology for gas sensing applications. A novel geometry of bossed silicon membranes used as mechanical transducer has been studied by finite element modelling. Device fabrication is achieved from SOI substrates through deep backside anisotropic etching and shallow front side reactive ion etching to define a bossed sensing membrane with two reinforced areas. Thus, the influence of thin film stresses on the device performance is largely decreased. Polysilicon gauges are located on the reinforced areas to get a better linearity in pressure.     

Ferroelectric thin film fabrication by direct UV-lithography

Due to their use in the fields of sensors, energy harvesting, capacitors and FeRAMs the fabrication of microstructured ferroelectric thin films is an important research field. Therefore a modified sol–gel process chain has been developed to produce fine patterned ferroelectric PZT (PbZr_0.52Ti_0.48O₃) thin films by direct UV-lithography. A sol based on methacrylic acid was developed to provide a photosensitive metal organic PZT precursor. The sol was used to obtain photosensitive xerogel films by spin-coating, which were patterned using conventional UV-photolithography equipment. After development the patterned xerogel films were pyrolized and crystallized in air via rapid thermal annealing in order to obtain crystalline PZT thin films. The patterned PZT films were investigated by XRD technique and SEM-micrographs. Finely patterned, crack free, crystalline PZT thin films were obtained.     

Enhancing displacement of lead-zirconate-titanate (PZT) thin-film membrane microactuators via a dual electrode design

A common design of piezoelectric microactuators adopts a membrane structure that consists of a base silicon diaphragm, a layer of bottom electrode, a layer of piezoelectric thin film, and a layer of top electrode. In particular, the piezoelectric thin film is often made of lead-zirconate-titanate (PZT) for its high piezoelectric constants. When driven electrically, the PZT thin film extends or contracts flexing the membrane and generating an out-of-plane displacement. Many manufacturing defects, however, could significantly reduce the designed actuator displacement. Examples include residual stresses, warping, non-uniform etching of the silicon diaphragm, and misalignment between the top electrode and the silicon diaphragm. The purpose of this paper is to develop a dual top-electrode design to enhance the actuator displacement. In this design, the top electrode consists of two disconnected (thus independent) electrode areas, while a continuous bottom electrode serves as the ground. The two top electrodes are located in two regions with opposite curvature when the diaphragm deflects. When the two top electrodes are driven in an out-of-phase manner, the actuator displacement is enhanced. Finite element analyses and experimental measurements both confirm the feasibility of this design. When manufacturing defects are present, experimental results indicate that the actuator displacement can be optimized by adjusting the phase difference between the dual top electrodes.     

Polysilicon sacrificial layer etching using ClF3 for thin film encapsulation of silicon acceleration sensors with high aspect ratio

We present a new thin film encapsulation technique for surface micromachined sensors using a polysilicon multilayer process. The main feature of the encapsulation process is that both the sacrificial layer above the silicon sensor structure and the cap layer consist of epitaxial polysilicon. The sacrificial layer is removed by chlorine trifluoride (ClF₃) plasmaless gas-phase etching through vents within the cap layer. The perforated cap membrane is sealed by a nonconformal oxide deposition. The method has been applied to a silicon surface micromachined acceleration sensor with high aspect ratio structures, but is broadly applicable. Capacitance–voltage measurements have been performed to show the electrical functionality of the accelerometer.     

PECVD films for low‐temperature poly‐Si TFT‐LCD applications

Low‐temperature polycrystalline‐silicon (poly‐Si) thin‐film‐transistor (TFT) processes, based on PECVD amorphous‐silicon (a‐Si:H) precursor films and excimer‐laser crystallization, have been developed for application in the fabrication of active‐matrix liquid‐crystal‐displays (AMLCDs). The optimum process for depositing the precursor films has been identified. The relationship between excimer‐laser crystallization and poly‐Si film morphology has also been studied. Using these techniques, poly‐Si TFTs with a mobility of 275 cm²/V‐sec and on/off ratios of 1 × 10⁷ have been fabricated.     

Development of rollable silicon thin‐film‐transistor backplanes utilizing a roll‐to‐roll continuous lamination process

Abstract— Rollable silicon thin‐film‐transistor (TFT) backplanes utilizing a roll‐to‐roll process have been developed. The roll‐to‐roll TFT‐backplane technology is characterized by a glass‐etching TFT transfer process and a roll‐to‐roll continuous lamination process. The transfer process includes high‐rate, uniform glass‐etching to transfer TFT arrays fabricated on a glass substrate to a flexible plastic film. In the roll‐to‐roll process, thinned TFT‐glass sheets (0.1 mm) and a base‐film roll are continuously laminated using a permanent adhesive. Choosing both an appropriate elastic modulus for the adhesive and an appropriate tension strength to be used in the process is the key to suppressing deformation of the TFT‐backplane rolls caused by thermal stress. TFT backplanes that can be wound, without any major physical damage such as cracking, on a roll whose core diameter is approximately 300 mm have been sucessfully obtained. Incorporating the TFT‐backplane rolls into other roll components, such as color‐filter rolls, will make it possible to produce TFT‐LCDs in a fully roll‐to‐roll manufacturing process.     

Microfabricated Lamb wave device based on PZT sol-gel thin film formechanical transport of solid particles and liquids

The fabrication using silicon micromachining and characterization of an acoustic Lamb wave actuator is presented. The intended use of the device is for mass transport and sensor applications. The device consists of dual interdigitated transducers patterned on a thin-film composite membrane of silicon nitride, platinum, and a sol-gel-derived piezoelectric ceramic (PZT) thin film. The acoustic properties of the device are presented along with preliminary applications to mechanical transport and liquid delivery systems. Improved acoustic signals and improved mass transport are achieved with PZT over present Lamb wave devices utilizing ZnO or AlN as the piezoelectric transducer     

Fabrication of nanoscale tungsten tip arrays for scanning probemicroscopy-based devices

A new fabrication process for nanoscale tungsten tip arrays was developed for scanning probe microscopy-based devices. It is suitable to make a huge array on a device chip and is potentially compatible with CMOS technology. In this study, tungsten was selected as a tip material because of its hardness and conductivity. The newly developed fabrication process mainly consists of several important techniques: a combination of optical lithography and electron beam (EB) lithography to reduce the total exposure time with high resolution and chromium/tungsten/chromium (Cr/W/Cr) sandwich deposition and etching in which the first chromium layer is used as a mask and a second one is used as an etch stop. A periodic array of dots in an EB resist with a spot diameter of less than 50 nm was obtained by a combination of optical lithography and EB lithography with a positive resist (polymethylmethacrylate) in which all processing conditions were optimized carefully. A thin and uniform chromium film, deposited by ion-beam sputtering, allowed the use of thin polymethylmethacrylate (PMMA) film which led to the high resolution. The conditions of dc magnetron sputtering were also optimized in order to deposit a densely packed and low-resistivity film. The resulting tungsten tip arrays had a cylindrical shape with diameters of less than 60 nm and heights of 300 nm     

Optimization of a wafer-level process for the fabrication of highly reproducible thin-film MOX sensors

Thin-film metal oxide semiconductor (MOX) gas sensors are characterized by high sensitivity and fast response. Those characteristics make them very promising among the several existing technologies for the production of solid state gas sensors. Furthermore, by means of silicon micro-machining technology, MOX sensors can be made on micro hotplates, allowing to reach very low-power consumption, and the batch production guaranties a high yield. However, reproducibility and reliability are still major issues preventing the use of thin-film MOX sensors in mass-market applications.

In this work, a wafer-level fabrication process for micro-machined low-power consumption thin-film MOX sensor arrays is reported. Different solutions for the optimization of the fabrication process are investigated, aiming to increase the reproducibility. The critical technological steps related to signal generation and acquisition, like the thin-film definition and positioning and the definition of the sensing layer electrodes, have been optimized. The devices considered are 4-sensor arrays based on thin films of SnO₂ deposited by a modified rheotaxial growth and thermal oxidation (M-RGTO) technique on micro-machined low-power hotplates.

The different fabrication techniques are described in detail. 45 sensors from 3 wafers, made using the different fabrication techniques, are comparatively characterized. The spread of the main sensor functional parameters values shows an evident decrease when the optimized fabrication process is used.