Ion beam characterization of advanced luminescent materials for application in radiation effects microscopy

The ion photon emission microscope (IPEM) is a technique developed at Sandia National Laboratories (SNL) to study radiation effects in integrated circuits with high energy, heavy ions, such as those produced by the 88” cyclotron at Lawrence Berkeley National Laboratory (LBNL). In this method, an ion-luminescent film is used to produce photons from the point of ion impact. The photons emitted due to an ion impact are imaged on a position-sensitive detector to determine the location of a single event effect (SEE). Due to stringent resolution, intensity, wavelength, decay time, and radiation tolerance demands, an engineered material with very specific properties is required to act as the luminescent film. The requirements for this material are extensive. It must produce a high enough induced luminescent intensity so at least one photon is detected per ion hit. The emission wavelength must match the sensitivity of the detector used, and the luminescent decay time must be short enough to limit accidental coincidences. In addition, the material must be easy to handle and its luminescent properties must be tolerant to radiation damage. Materials studied for this application include plastic scintillators, GaN and GaN/InGaN quantum well structures, and lanthanide-activated ceramic phosphors. Results from characterization studies on these materials will be presented; including photoluminescence, cathodoluminescence, ion beam induced luminescence, luminescent decay times, and radiation damage. Results indicate that the ceramic phosphors are currently proving to be the ideal material for IPEM investigations.     

Mapping ion beam induced current changes in a commercial MOSFET

We demonstrate a novel nuclear microprobe imaging and analysis modality for micrometre-scale field effect transistor devices probed with focused beams of MeV ions. By recording the drain current as a function of time during ion irradiation it is possible to identify current transients induced by the passage of single ions through the sensitive structures of the device. This modality takes advantage of the fact that the ionization produced by the passage of a single ion acts in an equivalent way to a transient change in the gate bias which therefore modulates the drain current as a function of time. This differs from the traditional ion beam induced charge technique where the ionization drifts in an internal electric field and induces a single charge pulse in an electrode applied to the device. Instead a richer variety of phenomena are observed, with different time constants which depend on the proximity of the ion strike to the channel of the device. The signals may be used to examine device function, radiation sensitivity or to count ion impacts within the channel.     

EAST-NBI离子源电极打火分析及处理

强流离子源是EAST(Experimental Advanced Superconducting Tokamak)中性束注入器(Neutral Beam Injector,NBI)最关键的核心部件,其能达到的性能在很大程度上决定了EAST中性束注入器所能达到的指标。离子源在束引出时电极打火现象偶有发生,这对于离子源的正常运行有非常严重的影响,甚至危害离子源的寿命。本文结合离子源运行过程中的束引出实验波形和水流量热计(Water Flow Calorimetry,WFC)系统的测量数据得出等离子体发射面的束流光学系统一直处于非最佳聚焦状态是导致打火的原因,试通过优化高压投入时刻等离子体与高压的匹配,实现高压的稳定投入有效抑制打火现象的发生,并且给离子源加入硬件保护机制,为离子源安全稳定运行奠定基础。     

Computer simulation of ion beam analysis: Possibilities and limitations

Quantitative application of ion beam analysis methods, such as Rutherford backscattering, elastic recoil detection analysis, and nuclear reaction analysis, requires the use of computer simulation codes. The different types of available codes are presented, and their advantages and weaknesses with respect to underlying physics and computing time requirements are discussed. Differences between different codes of the same type are smaller by about one order of magnitude than the uncertainty of basic input data, especially stopping power and cross section data. Even very complex sample structures with elemental concentration variations with depth or laterally varying structures can be simulated quantitatively. Laterally inhomogeneous samples generally result in an ambiguity with depth profiles. The optimization of ion beam analysis measurements is discussed, and available tools are presented.     

离子束诱导电荷显微术的现状与发展趋势

离子束诱导电荷显微术（IBIC）是核子微探针显微成像技术的又一新发展，它具有低束流（fA量级），高效率的特点，已被广泛应用于半导体材料和微电子材料研究中。本文简述了离子束诱导电荷显微术（IBIC）的原理和实验方法，综述了IBIC 研究的现状和进展。     

Mapping of ion beam induced current changes in FinFETs

We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor surface. Holes in the lever of the SFM tip collimate the argon beam to sizes of 1.6 μm and 100 nm in diameter. Ion impacts upset the channel current due to formation of positive charges in the oxide areas. The induced changes in the source–drain current are recorded in dependence of the ion beam position with respect to the FinFET. Maps of local areas responding to the ion beam are obtained.     

Simulation of ion beam induced crystallization and amorphization in (0 0 1) silicon

The ion beam induced epitaxial crystallization (IBIEC) and the ion beam induced interfacial amorphization (IBIIA) in (0 0 1) silicon caused by 3 MeV Si⁺ and 3 MeV Au⁺ irradiation at 293 K and 623 K are investigated by using a combination of binary collision MC simulations and MD simulations. The energy and angular distribution of the primary recoils is calculated by TRIM and the subcascades caused by the primary recoils are treated by classical MD simulations using a correspondingly large MD cell with 49152 atoms. The resulting topological interface structure is analyzed and compared with that obtained by thermally activated solid phase epitaxy. The rates of crystallization and amorphization are calculated and compared with experimental data. Especially, their dependence on the nuclear deposited energy is discussed.     

高能重离子在聚合物中的辐照效应研究

Ion irradiation of polymers can induce irreversible changes in their macroscopic properties such as electrical and optical properties and the surface-related mechanical properties. Electronic excitation, ionization, chains scission, cross-links and mass losses are accepted as the fundamental events that give rise to the observed macroscopic changes. Detailed and systematic study of radiation induced effects in polymers enriches not only the knowledge of ion-material interactions but also supplies new bases for polymeric materials synthesis through ion-beam technologies. Previous work has concentrated mainly on effects induced by low-ionization particles such as γ-rays and electrons. Since 1980,s the application of high energy heavy ion accelerators enables the use of high energy heavy ion as an irradiation source, and many new and exciting effects and phenomena have been revealed.Energetic heavy ions in matter lose energy mainly through electronic excitation and ionization. Compared to low-ionization particles, high energy heavy ion possesses higher LET(linear energy transfer) values which can reach several to several tens keV/nm. As most of the primary ionizations and excitations occur close to the ion trajectory in a core of a few nanometers in diameter, a continuous damaged zone along the ion path can be induced,in which all bonds inside the zone can be destroyed due to the high rate energy deposition. Studies on this particularity of high energy heavy ion irradiation and its effects in materials will cause great influence on industry as well as on our daily life.The previous work has revealed the great difference in the effects induced by high energy heavy ions compared to the other particles. It has been shown that under irradiation with lower LET particles gas release depends on molecular structure and material composition, whereas under irradiation with high LET particles, such as high energy heavy ions, it is not the case. Some materials that undergo degradation under γ-irradiation can be cross-linked by irradiation with high energy heavy ions. In some cases new molecular structures were induced by high energy heavy ions with sufficiently high LET values. In recent years we have irradiated polyethylterephthalate (PET), polystyrene (PS), polycarbonate (PC) and polyimide (PI) with high energy Ar, Kr, Xe and U ion beams.Chemical and physical changes of the materials induced by the high energy heavy ion beams were investigated by Fourier-transform infrared ray spectroscopy, ultraviolet and visible transmission spectroscopy and X-ray diffraction measurements, from which damage cross-sections of various functional groups were determined[1]. An energy loss threshold for damage of phenyl ring in PET has been derived and difference in amorphization of PET under high and low LET irradiations was observed. It is found that alkyne end groups can be induced in all the materials above a certain electronic energy loss threshold, which is found to be about 0.8 keV/nm for PS and 0.4 keV/nm for PC. The production cross-section of alkyne end group increases with increasing electronic energy loss and shows saturation at high electronic energy loss values.     

半导体器件与电路辐照响应测试系统

介绍用于测量ＭＯＳ电容、ＭＯＳＦＥＴ、半导体元器件和集成电路辐照效应的微机测试系统及其功能，并给出该系统在半导体辐射损伤研究甲的应用实例．     

慢正电子束研究N^＋注入金属镍中生成的缺陷

用慢正电子束配合多普勒湮没能谱测量技术研究N~+离子注入镍样品产生的缺陷。由未注入的样品得到了正电子在镍中的扩散参数E_0=4.6keV。比较两个样品的S参数随入射正电子能量变化的曲线给出了95keV、6.4×10~(17)/cm~2剂量的N~+注入镍样品所产生的缺陷分布;缺陷由表面一直延伸到190nm,浓度最大的区域在27—110nm。这些都与由Trim程序的Monte Carlo模拟计算的结果很好地符合。     

Simulation of damage induced by ion implantation in Lithium Niobate

A simulation tool has been developed to engineer the damage formation in Lithium Niobate by ion irradiation with any atomic number and energy. Both nuclear and electronic processes were considered and, in particular, the dependence on the ion velocity of the electronic excitation damage efficiency has been taken into account. By using this tool it is possible both to draw damage nomograms, useful to qualitatively foresee the result of a given process, and to perform reliable simulations of the defect depth profiles, as demonstrated by the good agreement with the experimental data available in the literature.     

Radiation hardness of polysiloxane scintillators analyzed by ion beam induced luminescence

The radiation hardness of polysiloxane based scintillators has been measured by ion beam induced luminescence (IBIL). The light intensity as a function of the irradiation fluence with an He⁺ beam at 1.8 MeV (1.0 μA/cm²) has been measured on undoped polymers synthesized with different amounts of phenyl units and on polysiloxanes doped with two different dye molecules (BBOT and Lumogen Violet) sensitizing the scintillation yield.     

The effects of intense gamma-irradiation on the alpha-particle response of silicon carbide semiconductor radiation detectors

Silicon Carbide (SiC) semiconductor radiation detectors are being developed for alpha-particle, X-ray and Gamma-ray, and fast-neutron energy spectrometry. SiC detectors have been operated at temperatures up to 306 °C and have also been found to be highly resistant to the radiation effects of fast-neutron and charged-particle bombardments. In the present work, the alpha-particle response of a SiC detector based on a Schottky diode design has been carefully monitored as a function of ¹³⁷Cs gamma-ray exposure. The changes in response have been found to be negligible for gamma exposures up to and including 5.4 MGy, and irradiations to higher doses are in progress.     

低能高束流氩离子源的结构及性能

离子源技术是等离子体研究中的一项重要内容,而低能大束流源则是离子源技术研究中的一个重要方向,因为这样的源在离子束刻蚀、离子束溅射镀膜以及荷能粒子与物质相互作用方面都有广泛的应用;本文采用空心阴极空心阳极结构,用热阴极电子发射弧放电驱动并用磁场约束产生等离子体,用曲面发射引出离子束,研制成了氩气放电溅射离子源;研究了灯丝加热电流、弧压对弧流的影响和弧流与工作气体压力对离子束引出的影响规律.离子源的引出电压在0-4.0 kV之间连续可调,最大引出束流为100 mA,束斑面积为φ6.0 cm,以Ti为溅射靶时的最大溅射沉积率为0.45 nm/s,离子源可连续工作160 h.     

离子束混合及离子注入陶瓷材料表面改性研究概述

对离子注入陶瓷材料引起的辐照损伤和材料力学性能、摩擦学性能的改善及陶瓷基体上金属薄膜的离子束混合增强粘着研究的进展进行了综述。     

高梯度加速管的束流传输

对不同能量、不同质量数、不同初始条件的入射束和有无空间电荷效应的离子束流在高梯度加速管中的传输进行了计算，并讨论了一些影响加速管聚焦作用的主要因素，计算结果与实际情况相符。     

中国科学院物理研究所的离子束分析及离子注入改性研究

介绍了中国科学院物理研究所离子束研究室的主要设备、分析方法、离子注入材料改性研究以及近年来在半导体材料、高Ｔｃ超导材料、环保等领域中的研究工作。     

Low-energy ion scattering and sputtering at grazing ion bombardment of clean and oxygen covered Ag(1 1 0) surface

The ion scattering and sputtering processes at low energy grazing N⁺ and Ne⁺ ion bombardment of clean and oxygen covered Ag(1 1 0) surface have been investigated by computer simulation in the binary collision approximation.

The spatial, angular and energy distributions of scattered, sputtered particles and desorbed molecules of oxygen as well as their yields versus the angle of incidence have been calculated. In these distributions the some characteristic peaks were observed and analysed. It was found that an adsorption layer plays a role of the additional surface barrier, i.e. it reflects leaving target atoms back to crystal. The azimuth angular dependencies of Ag sputtering yield and non-dissociative O₂ desorption yield at grazing incidence have been calculated. It was shown that these dependencies correlate the crystal orientation.