Separation of potential and kinetic electron emission from Si and W induced by multiply charged neon and argon ions

The total secondary electron emission yields, γ_T, induced by impact of the fast ions Ne^q+ (q = 2-8) and Ar^q+ (q = 3-12) on Si and Ne^q+ (q = 2-8) on W targets have been measured. It was observed that for a given impact energy, γ_T increases with the charge of projectile ion. By plotting γ_T as a function of the total potential energy of the respective ion, true kinetic and potential electron yields have been obtained. Potential electron yield was proportional to the total potential energy of the projectile ion. However, decrease in potential electron yield with increasing kinetic energy of Ne^q+ impact on Si and W was observed. This decrease in potential electron yield with kinetic energy of the ion was more pronounced for the projectile ions having higher charge states. Moreover, kinetic electron yield to energy-loss ratio for various ion-target combinations was calculated and results were in good agreement with semi-empirical model for kinetic electron emission.     

Monte Carlo study of ion-induced backward and forward secondary electron emission from thin Al foil

A direct Monte Carlo program has been developed to calculate the backward (γ_b) and forward (γ_f) electron emission yields from 20 nm thick Al foil for impact of C⁺, Al⁺, Ar⁺, Cu⁺ and Kr⁺ ions having energies in the range of 0.1-10 keV/amu. The program incorporates the excitation of target electrons by projectile ions, recoiling target atoms and fast primary electrons. The program can be used to calculate the electron yields, distribution of electron excitation points in the target and other physical parameters of the emitted electrons. The calculated backward electron emission yield and the Meckbach factor R = γ_f/γ_b are compared with the available experimental data, and a good agreement is found. In addition, the effect of projectile energy and mass on the longitudinal and lateral distribution of the excitation points of the electrons emitted from front and back of Al target has been investigated.     

Ion induced high energy electron emission from copper

We present measurements of secondary electron emission from Cu induced by low energy bombardment (1-5 keV) of noble gas (He⁺, Ne⁺ and Ar⁺) and Li⁺ ions. We identify different potential and kinetic mechanisms and find the presence of high energetic secondary electrons for a couple of ion-target combinations. In order to understand the presence of these fast electrons we need to consider the Fermi shuttle mechanism and the different ion neutralization efficiencies.     

High energy primary knock-on process in metal-deuterium systems initiated by bombardment with noble gas ions

An experimental study confirms the possibility of nuclear fusion reactions initiating in metal-deuterium targets by bombarding them with ions that are not the reagents of the fusion reaction, in particular, with noble gas ions. The yields of (d,d) and (d,t) reactions were measured as functions of energy (0.4-3.2 MeV) and mass of incident ions (He⁺, Ne⁺, Ar⁺, Kr⁺ and Xe⁺). Irradiation by heavy ions produced a number of energetic deuterium atoms in the deuteride and deuterium + tritium metal targets. At ion energies of ∼0.1-1 MeV the d-d reaction yields are relatively high. A model of nuclear fusion reaction cross-sections in atomic collision cascades initiated by noble gas ion beam in metal-deuterium target is developed. The method for calculation tritium or deuterium recoil fluxes and the yield of d-d fusion reaction in subsequent collisions was proposed. It was shown that D(d,p)t and D(t,n)⁴He reactions mainly occur in energy region of the recoiled D-atom from 10 keV to 250 keV. The calculated probabilities of d-d and d-t fusion reactions were found to be in a good agreement with the experimental data.     

New local model for electronic energy loss and its application to computer simulations of channeling

We used the average of the Thomas-Fermi (TF) electron distribution instead of that of Hartree-Fock (HF) electron distribution as the screening length of an isolated atom. Based on the Firsov theory, we proposed a new Firsov formula of the electronic energy loss which has a simple form ΔE_e(E, b) ∞ S_e(E) exp(γb)/(1 + βb)⁶, where S_e(E) is the electronic stopping cross section, b = p/a, p and a are the impact parameter and the screening length, respectively, and β and γ are the fitting parameters. Using the present screening lengths with the shell effect and the new Firsov formula, the depth distributions of channeling were simulated by the ACOCT code for 20 keV B⁺ ions impinging along the [1 1 0] channel direction of silicon (1 1 0) surface. The ACOCT depth profiles of channeling using the new Firsov (solid) local model for the AMLJ potential are in good agreement with the experimental ones.     

Polarization effects on the cross-section of ion-atom collisions

Coupled-channel cross-sections for electron capture, ionization and electron loss due to polarization effects are calculated. The maximum impact parameter for electron escape is analyzed within the classical framework. The probabilities of ionization and capture are analyzed simultaneously by a semi-empirical method. Differing from the n-body classical trajectory Monte Carlo method, the condition for electron escape is determined by Coulomb forces related to the two nuclei. This method can be used to calculate coupled-channel cross-sections rather than single-channel ones in other methods. Therefore the calculated results can be compared with experimental data directly. In the low energy range, neglecting the ionization effect, the single-capture cross-sections of hydrogen atoms induced by various partially-stripped ions were calculated. In the high energy range, neglecting the capture effect on ionization, the pure-ionization cross-sections of neon atoms induced by Ne^q+ (q = 4, 6, 8) and Ar^q+ (q = 4, 6, 8, 10) at an incident energy E = 1.05 MeV/u were calculated. Good agreement was found between our calculation and experimental data in the literature. This method had been partially applied for intermediate energy successfully.     

Electronic-structure theory of plutonium chalcogenides

The correlated band theory methods, the around-mean-field LDA + U and dynamical LDA + HIA (Hubbard-I), are applied to investigate the electronic structure of Pu chalcogenides. The LDA + U calculations for PuX (X = S, Se, Te) provide non-magnetic ground state in agreement with the experimental data. Non-integer filling of 5f-manifold (from approx. 5.6 in PuS to 5.7 PuTe). indicates a mixed valence ground state which combines f⁵ and f⁶ multiplets. Making use of the dynamical LDA+HIA method the photoelectron spectra are calculated in good agreement with experimental data. The three-peak feature near E_F attributed to 5f-manifold is well reproduced by LDA + HIA, and follows from mixed valence character of the ground state.     

Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation

The effects of argon ion irradiation on structural changes in Ta/Ti multilayers deposited on Si wafers were investigated. The starting structures consisted of sputter deposited 10 alternate Ta (∼23 nm) and Ti (∼17 nm) layers of a total thickness ∼200 nm. They were irradiated at room temperature with 200 keV Ar⁺, to the fluences from 5 × 10¹⁵ to 2 × 10¹⁶ ions/cm². The projected ion range was around mid-depth of the multilayered structure, and maximum displacements per atom ∼130. It was found that, despite of the relatively heavy ion irradiation, individual nanocrystalline Ta and Ti layers remain unmixed, keeping the same level of interface planarity. The changes observed in the mostly affected region are increase in lateral dimensions of crystal grains in individual layers, and incorporation of bubbles and defects that cause some stretching of the crystal lattice. Absence of interlayer mixing is assigned to Ta-Ti immiscibility (reaction enthalpy ΔH_f = +2 kJ/mol). It is estimated that up to ∼5 at.% interface mixing induced directly by collision cascades could be compensated by dynamic demixing due to chemical driving forces in the temperature relaxation regime. The results can be interesting towards developing radiation tolerant materials based on multilayered structures.     

Single- and multiple-electron loss cross-sections for fast heavy ions colliding with neutrals: Semi-classical calculations

Extensive calculations of single, multiple and total electron-loss cross-sections of fast heavy ions in collisions with neutral atoms are performed in the semi-classical approximation using the DEPOSIT code based on the energy deposition model and statistical distributions for ionization probabilities. The results are presented for Ar¹⁺, Ar²⁺, Kr⁷⁺, Xe³⁺, Xe¹⁸⁺, Pb²⁵⁺ and U^q+ (q = 10, 28, 39, 62) ions colliding with H, N, Ne, Ar, Kr, Xe and U atoms at energies E > 1 MeV/u and compared with available experimental data and the n-particle classical-trajectory Monte Carlo (nCTMC) calculations. The results show that the present semi-classical model can be applied for estimation of multiple and total electron-loss cross-sections within accuracies of a factor of 2.From calculated data for the total electron-loss cross-sections σ_tot, their dependencies on relative velocity v, the first ionization potential I₁ of the projectile and the target atomic number Z_A are found and a semi-empirical formula for σ_tot is suggested. The velocity range, where the semi-classical approximation can be used, is discussed.     

Electron emission by highly charged neon and xenon ions on fusion-relevant tungsten and graphite surfaces

Here we report highly charged ⁴⁰Ne^q+ (q = 3-8) and ¹²⁹Xe^q+ (q = 10-30) ion-induced secondary electron emission on the tungsten and highly oriented pyrolytic graphite (HOPG) surfaces. The total secondary electron yield is measured as a function of the potential energy of incident ion. The experimental data is used to separate contributions of kinetic and potential electron yields. We estimate roughly 10% of ion’s potential energy is consumed in potential electron emission. The rest of the ion’s potential energy is responsible for the sputtering and material modification.     

Ion-induced electron emission monitoring of the structure and morphology evolution in HOPG

The temperature dependences of the ion-induced electron emission yield γ of highly-oriented pyrolytic graphite (HOPG) under high-fluence (10¹⁸-10¹⁹ ions/cm²) 30 keV Ar⁺ ion irradiation at ion incidence angles from θ = 0^o (normal incidence) to 80^o have been measured to trace both the structure and morphology changes in the basal oriented samples. The target temperature has been varied during continuous irradiation from T = −180 to 400 ^oC. The surface analysis has been performed by the RHEED and SEM techniques. The surface microgeometry was studied using laser goniophotometry (LGF). The dependences of γ(T) were found to be strongly non-monotonic and essentially different from the ones for Ar⁺ and N₂⁺ ion irradiation of the polygranular graphites. A sharp peak at irradiation temperature T_p ≈ 150 ^oC was found. A strong influence of electron transport anisotropy has been observed, and ion-induced microgeometry is discussed.     

Sputtering and crystalline structure modification of bismuth thin films deposited onto silicon substrates under the impact of 20-160 keV Ar ions

The sputtering of bismuth thin films induced by 20-160 keV Ar⁺ ions has been studied using Rutherford backscattering spectrometry, scanning electron microscopy and X-ray energy dispersive and diffraction spectroscopy. These techniques revealed increasing modifications of the Bi film surfaces with increasing both ion beam energy and fluence up to their complete deterioration under irradiation conditions E = 160 keV and φ = 1.5 × 10¹⁶ cm⁻², leaving isolated islands of preferred (0 1 2) orientation on the Si substrate. The observed surface morphology and crystalline structure evolutions are likely due to a complex interplay of interaction mechanisms involving both elastic nuclear collisions and inelastic electronic ones. The measured Bi sputtering yields versus Ar⁺ ion fluence for a fixed ion energy exhibit a significant depression at very low φ-values followed by a steady state regime above ∼2.0 × 10¹⁴ cm⁻². Measured sputtering yields versus Ar⁺ ion energy with fixing ion fluence to 1.2 × 10¹⁶ cm⁻² in the upper part of the yield saturation regime are also reported. Their comparison to theoretical model and SRIM 2008 Monte Carlo simulation predictions is discussed.     

Erosion of carbon fiber composites under high-fluence heavy ion irradiation

The ion-induced erosion, determining by sputtering yield Y and surface evolution including structure and morphology changes of the modified surface layers, of two commercial carbon fiber composites (CFC) with different reinforcement - KUP-VM (1D) and Desna 4 (4D) have been studied under 30 keV Ar⁺ high fluence (φt ∼ 10¹⁸-10²⁰ ion/cm²) irradiation in the temperature range from room temperature to 400 °C. Ion-induced erosion results in the changes of carbon fiber structure which depend on temperature and ion fluence. Monitoring of ion-induced structural changes using the temperature dependence of ion-induced electron emission yield has shown that for Desna 4 and KUP-VM at dynamic annealing temperature Т_а ≈ 170 °С the transition takes place from disordering at T < T_a to recrystallization at T > T_a. The annealing temperature Т_а is close to the one for polycrystalline graphites. Microscopy analysis has shown that at temperatures Т < T_a the etching of the fibers results in a formation of trough-like longitudinal cavities and hillocks. Irradiation at temperatures T > T_a leads to a crimped structure with the ribs perpendicular to fiber axis. After further sputtering of the crimps the fiber morphology is transformed to an isotropic globular structure. As a result the sputtering yield decreases for Desna 4 more than twice. This value is almost equal to that for KUP-VM, Desna 4, polycrystalline graphites and glassy carbons at room temperature.     

Thermal conductivity of (U,Pu,Np)O2 solid solutions

The thermal conductivities of (U_,Pu_,Np)O₂ solid solutions were studied at temperatures from 900 to 1770 K. Thermal conductivities were obtained from the thermal diffusivity measured by the laser flash method. The thermal conductivities obtained below 1400 K were analyzed with the data of (U,Pu,Am)O₂ obtained previously, assuming that the B-value was constant, and could be expressed by a classical phonon transport model, λ = (A + BT)⁻¹, A(z₁, z₂) = 3.583 × 10⁻¹ × z₁ + 6.317 × 10⁻² × z₂ + 1.595 × 10⁻² (m K/W) and B = 2.493 × 10⁻⁴ (m/W), where z₁ and z₂ are the contents of Am- and Np-oxides. It was found that the A-values increased linearly with increasing Np- and Am-oxide contents slightly, and the effect of Np-oxide content on A-values was smaller than that of Am-oxide content. The results obtained from the theoretical calculation based on the classical phonon transport model showed good agreement with the experimental results.     

Alkali ion scattering from Ag(0 0 1) and Ag thin films at low and hyperthermal energies

We have investigated the scattering of K⁺ and Cs⁺ ions from a single crystal Ag(0 0 1) surface and from a Ag-Si(1 0 0) Schottky diode structure. For the K⁺ ions, incident energies of 25 eV to 1 keV were used to obtain energy-resolved spectra of scattered ions at θ_i = θ_f = 45°. These results are compared to the classical trajectory simulation safari and show features indicative of light atom-surface scattering where sequential binary collisions can describe the observed energy loss spectra. Energy-resolved spectra obtained for Cs⁺ ions at incident energies of 75 eV and 200 eV also show features consistent with binary collisions. However, for this heavy atom-surface scattering system, the dominant trajectory type involves at least two surface atoms, as large angular deflections are not classically allowed for any single scattering event. In addition, a significant deviation from the classical double-collision prediction is observed for incident energies around 100 eV, and molecular dynamics studies are proposed to investigate the role of collective lattice effects. Data are also presented for the scattering of K⁺ ions from a Schottky diode structure, which is a prototype device for the development of active targets to probe energy loss at a surface.     

Thermal conductivities of hypostoichiometric (U, Pu, Am)O2−x oxide

The thermal conductivities of (U_0.68Pu_0.30Am_0.02)O_2.00−x solid solutions (x = 0.00-0.08) were studied at temperatures from 900 to 1773 K. The thermal conductivities were obtained from the thermal diffusivities measured by the laser flash method. The thermal conductivities obtained experimentally up to about 1400 K could be expressed by a classical phonon transport model, λ = (A + BT)⁻¹, A(x) = 3.31 × x + 9.92 × 10⁻³ (mK/W) and B(x) = (−6.68 × x + 2.46) × 10⁻⁴ (m/W). The experimental A values showed a good agreement with theoretical predictions, but the experimental B values showed not so good agreement with the theoretical ones in the low O/M ratio region. From the comparison of A and B values obtained in this study with the ones of (U,Pu)O_2−x obtained by Duriez et al. [C. Duriez, J.P. Alessandri, T. Gervais, Y. Philipponneau, J. Nucl. Mater. 277 (2000) 143], the addition of Am into (U, Pu)O_2−x gave no significant effect on the O/M dependency of A and B values.     

Vaporization behavior and Gibbs energy of formation of Rb2ThO3

The thermodynamic stability of rubidium thorate, Rb₂ThO₃(s), was determined from vaporization studies using the Knudsen effusion forward collection technique. Rb₂ThO₃(s) vaporized incongruently and predominantly as Rb₂ThO₃(s)=ThO₂(s) + 2Rb(g) + 1/2 O₂(g). The equilibrium constant K=p_Rb²·p_O2^1/2 was evaluated from the measurement of the effusive flux due to Rb vapor species under the oxygen potential governed by the stoichiometric loss of the chemical component Rb₂O from the thorate phase. The Gibbs energy of formation of Rb₂ThO₃ derived from the measurement and other auxiliary data could be given by the equation, Δ_fG°(Rb₂ThO₃,s)=−1794.7+0.42T ± .     

Silkworm eggs: An ideal model for studying the biological effects of low energy Ar ion interaction in animals

The object of the current work was to study low energy Ar⁺ ion beam interactions with silkworm eggs and thus provide further understanding of the mechanisms involved in ion bombardment-induced direct gene transfer into silkworm eggs. In this paper, using low-energy Ar⁺ ion beam bombardment combined with piggyBac transposon, we developed a novel method to induce gene transfer in silkworm. Using bombardment conditions optimized for egg-incubation (25 keV with ion fluences of 800 × 2.6 × 10¹⁵ ions/cm² in dry state under vacuum), vector pBac{3 × P3-EGFPaf} and helper plasmid pHA3pig were successfully transferred into the silkworm eggs. Our results obtained from by PCR assay and genomic Southern blotting analysis of the G1 generations provide evidence that low-energy ion beam can generate some craters that play a role in acting as pathways of exogenous DNA molecules into silkworm eggs.     

On the emission of MoCs molecular ions from Cs irradiated molybdenum surface

The present paper deals with the emission of atomic and molecular ions from elemental molybdenum surface under Cs⁺ bombardment to explore the MCs⁺ formation mechanism with changing Cs surface coverage. Integrated count of MoCs⁺ shows a monotonic increase with increasing primary ion energy (1-5 keV). Change in MoCs⁺ intensity is attributed to the variation of surface work function ? and cesium surface concentration c_Cs due to varying impact energies. Variation of c_Cs has been obtained from the expression, c_Cs ∝ 1/(1 + Y) where Y is the elemental sputtering yield estimated from TRIM calculations. Systematic study of the energy distributions of all species emerging from Mo target has been done to measure the changes in surface work function. Changing slopes of the leading parts of Cs⁺ energy distributions suggest a substantial depletion in surface work function ? with decreasing primary ion energies. Δ? shows a linear dependence on c_Cs. The maximum reduction in surface work function Δ?_max = 0.69 eV corresponds to the highest value of c_Cs = 0.5. A phenomenological model, based on the linear dependence of ? on c_Cs, has been employed to explain the MoCs⁺ data.     

Sputtering and surface state evolution of Bi under oblique incidence of 120 keV Ar ions

The sputtering and surface state evolution of Bi/Si targets under oblique incidence of 120 keV Ar⁺ ions have been investigated over the range of incidence angles 0° ? θ_i ? 60°. Increasing erosion of irradiated samples (whose surface thickness reduced by ∼3% at normal incidence up to ∼8% at θ = 60°) and their surface smoothing with reducing grain sizing were pointed out using Rutherford backscattering (RBS), atomic force (AFM) and X-ray diffraction (XRD) techniques. Measured sputtering yield data versus θ_i with fixed ion fluence to ∼1.5 × 10¹⁵ cm⁻² are well described by Yamamura et al. semi-empirical formula and Monte Carlo (MC) simulation using the SRIM-2008 computer code. The observed increase in sputter yield versus incidence angle is closely correlated to Bi surface topography and crystalline structure changes under ion irradiation.