Separation of potential and kinetic electron emission from Si and W induced by multiply charged neon and argon ions

The total secondary electron emission yields, γ_T, induced by impact of the fast ions Ne^q+ (q = 2-8) and Ar^q+ (q = 3-12) on Si and Ne^q+ (q = 2-8) on W targets have been measured. It was observed that for a given impact energy, γ_T increases with the charge of projectile ion. By plotting γ_T as a function of the total potential energy of the respective ion, true kinetic and potential electron yields have been obtained. Potential electron yield was proportional to the total potential energy of the projectile ion. However, decrease in potential electron yield with increasing kinetic energy of Ne^q+ impact on Si and W was observed. This decrease in potential electron yield with kinetic energy of the ion was more pronounced for the projectile ions having higher charge states. Moreover, kinetic electron yield to energy-loss ratio for various ion-target combinations was calculated and results were in good agreement with semi-empirical model for kinetic electron emission.     

Scintillation light produced by low-energy beams of highly-charged ions

Measurements have been performed of scintillation light intensities emitted from various inorganic scintillators irradiated with low-energy beams of highly-charged ions from an electron beam ion source (EBIS) and an electron cyclotron resonance ion source (ECRIS). Beams of xenon ions Xe^q+ with various charge states between q = 2 and q = 18 have been used at energies between 5 and 17.5 keV per charge generated by the ECRIS. The intensity of the beam was typically varied between 1 and 100 nA. Beams of highly charged residual gas ions have been produced by the EBIS at 4.5 keV per charge and with low intensities down to 100 pA. The scintillator materials used are flat screens of P46 YAG and P43 phosphor. In all cases, scintillation light emitted from the screen surface was detected by a CCD camera. The scintillation light intensity has been found to depend linearly on the kinetic ion energy per time deposited into the scintillator, while up to q = 18 no significant contribution from the ions’ potential energy was found. We discuss the results on the background of a possible use as beam diagnostics, e.g. for the new HITRAP facility at GSI, Germany.     

Polarization effects on the cross-section of ion-atom collisions

Coupled-channel cross-sections for electron capture, ionization and electron loss due to polarization effects are calculated. The maximum impact parameter for electron escape is analyzed within the classical framework. The probabilities of ionization and capture are analyzed simultaneously by a semi-empirical method. Differing from the n-body classical trajectory Monte Carlo method, the condition for electron escape is determined by Coulomb forces related to the two nuclei. This method can be used to calculate coupled-channel cross-sections rather than single-channel ones in other methods. Therefore the calculated results can be compared with experimental data directly. In the low energy range, neglecting the ionization effect, the single-capture cross-sections of hydrogen atoms induced by various partially-stripped ions were calculated. In the high energy range, neglecting the capture effect on ionization, the pure-ionization cross-sections of neon atoms induced by Ne^q+ (q = 4, 6, 8) and Ar^q+ (q = 4, 6, 8, 10) at an incident energy E = 1.05 MeV/u were calculated. Good agreement was found between our calculation and experimental data in the literature. This method had been partially applied for intermediate energy successfully.     

Autoionization of N (q = 1-3) Rydberg states produced in high-energy collisions with He

Energy spectra of electrons ejected through autoionization decay of high-Rydberg states in high-energy collisions of N^q+ (q = 1-3) with He have been measured with high-resolution by using zero-degree electron spectroscopy. Several series of autoionizing lines were observed, corresponding to decays from N³⁺ 1s²2p(²P)nl Rydberg states produced in N³⁺ + He collisions, from N²⁺ 1s²2s2p(³P)nl Rydberg states produced in N²⁺ + He and from N⁺ 1s²2s2p²(⁴P)nl Rydberg states produced in N⁺ + He, respectively. Angular momentum distributions for the first or second peak of three series of Coster-Kronig electron transitions for N^q+ (q = 1-3) projectiles are also discussed, where the highly excited states are formed by electron excitation.     

Pure ionization cross section of helium and ionization mechanism

Pure target ionization was investigated for 0.4-6.4 MeV C^q+(q = 1-4) + He and O^q+(q = 1-4) + He collisions. The double-to-single target ionization ratios R₂₁ were measured using coincidence techniques. We compare our results with existing experimental results and find they are in good agreement. The ratio R₂₁ is nearly independent of projectile charge state. The relation of R₂₁ ∼ V is analyzed using the over barrier model (OBM) and ionization probability, which is described in our extended over barrier model. Our calculation agrees well with the experimental results.     

Monte Carlo study of ion-induced backward and forward secondary electron emission from thin Al foil

A direct Monte Carlo program has been developed to calculate the backward (γ_b) and forward (γ_f) electron emission yields from 20 nm thick Al foil for impact of C⁺, Al⁺, Ar⁺, Cu⁺ and Kr⁺ ions having energies in the range of 0.1-10 keV/amu. The program incorporates the excitation of target electrons by projectile ions, recoiling target atoms and fast primary electrons. The program can be used to calculate the electron yields, distribution of electron excitation points in the target and other physical parameters of the emitted electrons. The calculated backward electron emission yield and the Meckbach factor R = γ_f/γ_b are compared with the available experimental data, and a good agreement is found. In addition, the effect of projectile energy and mass on the longitudinal and lateral distribution of the excitation points of the electrons emitted from front and back of Al target has been investigated.     

PL and XPS study of radiation damage created by various slow highly charged heavy ions on GaN epitaxial layers

Photoluminescence (PL) spectrum, in conjunction with X-ray photoelectron spectroscopy (XPS) is used to evaluate the surface damage of GaN layer by highly-charged Xe^q+ (18 ? q ? 30), Ar^q+ (6 ? q ? 16) and Pb^q+ (q = 25,35) ions. The intensity of PL emission of GaN layer, including near band-edge peak and yellow luminescence, decreases with increasing fluence and charge state of the incident ions. Finally the PL emission is completely quenched after irradiation to high fluences at high charge state. A new peak at 450 nm appeared in PL spectra of the specimens irradiated with Xe¹⁸⁺, Ar⁶⁺ and Ar¹¹⁺, indicating that radioactive recombination within donor-acceptor pairs (DAPs) during irradiation. After irradiation, XPS spectra show N deficient or Ga rich on GaN surface and XPS spectra of Ga3d core levels indicate spectral peak evidently shifts from a Ga-N to Ga-Ga and Ga-O bond. The relative content of Ga-N bond decreases and the content of Ga-Ga bond increases with the increase of ion fluence and ion charge state. The binding energy of Ga3d_5/2 electron corresponding to Ga-Ga bond of the irradiated GaN film is found to be smaller than that of metallic Gallium (Ga⁰), which can be attributed to irradiation damage.     

Ion-induced electron emission monitoring of the structure and morphology evolution in HOPG

The temperature dependences of the ion-induced electron emission yield γ of highly-oriented pyrolytic graphite (HOPG) under high-fluence (10¹⁸-10¹⁹ ions/cm²) 30 keV Ar⁺ ion irradiation at ion incidence angles from θ = 0^o (normal incidence) to 80^o have been measured to trace both the structure and morphology changes in the basal oriented samples. The target temperature has been varied during continuous irradiation from T = −180 to 400 ^oC. The surface analysis has been performed by the RHEED and SEM techniques. The surface microgeometry was studied using laser goniophotometry (LGF). The dependences of γ(T) were found to be strongly non-monotonic and essentially different from the ones for Ar⁺ and N₂⁺ ion irradiation of the polygranular graphites. A sharp peak at irradiation temperature T_p ≈ 150 ^oC was found. A strong influence of electron transport anisotropy has been observed, and ion-induced microgeometry is discussed.     

Sputtering and crystalline structure modification of bismuth thin films deposited onto silicon substrates under the impact of 20-160 keV Ar ions

The sputtering of bismuth thin films induced by 20-160 keV Ar⁺ ions has been studied using Rutherford backscattering spectrometry, scanning electron microscopy and X-ray energy dispersive and diffraction spectroscopy. These techniques revealed increasing modifications of the Bi film surfaces with increasing both ion beam energy and fluence up to their complete deterioration under irradiation conditions E = 160 keV and φ = 1.5 × 10¹⁶ cm⁻², leaving isolated islands of preferred (0 1 2) orientation on the Si substrate. The observed surface morphology and crystalline structure evolutions are likely due to a complex interplay of interaction mechanisms involving both elastic nuclear collisions and inelastic electronic ones. The measured Bi sputtering yields versus Ar⁺ ion fluence for a fixed ion energy exhibit a significant depression at very low φ-values followed by a steady state regime above ∼2.0 × 10¹⁴ cm⁻². Measured sputtering yields versus Ar⁺ ion energy with fixing ion fluence to 1.2 × 10¹⁶ cm⁻² in the upper part of the yield saturation regime are also reported. Their comparison to theoretical model and SRIM 2008 Monte Carlo simulation predictions is discussed.     

Proton sputtering from polycrystalline Al surface interacting with highly charged ions at grazing incidence angle

Sputtering processes of protons from a polycrystalline Al surface interacting with Ar^q+ (q = 3-14) ions at a grazing incidence angle (∼0.5°) were investigated. The intensity of protons (I_H) detected in coincidence with scattered Ar atoms was measured as a function of q. I_H saturated at q ? 10, although it increased rapidly with q at 3 ? q ? 8. The angular distribution of protons with low kinetic energy (?2 eV) began to deviate from the cosine distribution and assumed a rather flat equidistribution as q increased. To analyze the sputtering processes of protons at the grazing incidence angle, a modified model of the “above-surface potential sputtering model” was proposed by considering image acceleration of projectile ions.     

Molybdenum L-shell X-ray production by 350-600 keV Xe (q = 25-30) ions

Molybdenum L-shell X-rays were produced by Xe^q+ (q = 25-30) bombardment at low energies from 2.65 to 4.55 keV/amu (350-600 keV). We observed a kinetic energy threshold of Mo L-shell ionization down to 2.65-3.03 keV/amu (350-400 keV). The charge state effect of the incident ions was not observed which shows that the ions were neutralized, reaching an equilibrium charge state and losing their initial charge state memory before production of L-shell vacancies resulted in X-ray production. The experimental ionization cross sections were compared with those from Binary Encounter Approximation theory. Taking into account projectile deflection in the target nuclear Coulomb field, the ionization cross section of Mo L-shell near the kinetic energy threshold was well described.     

Ion induced high energy electron emission from copper

We present measurements of secondary electron emission from Cu induced by low energy bombardment (1-5 keV) of noble gas (He⁺, Ne⁺ and Ar⁺) and Li⁺ ions. We identify different potential and kinetic mechanisms and find the presence of high energetic secondary electrons for a couple of ion-target combinations. In order to understand the presence of these fast electrons we need to consider the Fermi shuttle mechanism and the different ion neutralization efficiencies.     

Atomic data and spectral line intensities for Ni XVII

Electron impact collision strengths, energy levels, oscillator strengths, and spontaneous radiative decay rates are calculated for Ni XVII. We include in the calculations the 23 lowest configurations, corresponding to 159 fine-structure levels: 3l3l′, 3l4l″, and 3s5l?, with l, l′ = s, p, d, l″ = s, p, d, f, and l? = s, p, d. Collision strengths are calculated at five incident energies for all transitions at varying energies above the threshold of each transition. One additional energy, very close to the threshold of each transition, has also been included. Calculations have been carried out using the Flexible Atomic Code in the distorted wave approximation. Additional calculations have been performed with the University College London suite of codes for comparison. Excitation rate coefficients are calculated as a function of electron temperature by assuming a Maxwellian electron velocity distribution. Using the excitation rate coefficients and the radiative transition rates of the present work, statistical equilibrium equations for level populations are solved at electron densities covering the range of 10⁸ − 10¹⁴ cm⁻³ and at an electron temperature of log T_e(K) = 6.5, corresponding to the maximum abundance of Ni XVII. Spectral line intensities are calculated, and their diagnostic relevance is discussed. This dataset will be made available in the next version of the CHIANTI database.     

On the understanding of positive and negative ionization processes during ToF-SIMS depth profiling by co-sputtering with cesium and xenon

In this paper, ionization processes of secondary ions during ToF-SIMS dual beam depth profiling were studied by co-sputtering with 500 eV cesium and xenon ions and analyzing with 25 keV Ga⁺ ions. The Cs/Xe technique consists in diluting the cesium sputtering/etching beam with xenon ions to control the cesium surface concentration during ToF-SIMS dual beam depth profiling. Several depth profiles of a H-terminated silicon wafer were performed with varying Cs beam concentration and the steady state Si, Xe and Cs surface concentrations were measured in situ by Auger electron spectroscopy. It was found that the implanted Cs surface concentration increases with the Cs fraction in the beam from 0% for the pure Xe beam to a maximum Cs surface concentration for the pure Cs beam. Secondly, the variation of the silicon work function, due to the Cs implantation, was measured in situ and during depth profiling as the shift of the secondary ion kinetic energy distributions. Finally, the positive and negative elemental ion yields generated by the Ga analysis beam were recorded and modeled with respect to varying Cs/Xe mixture. We found that the Si⁻ and the Cs⁻ yields increase exponentially with the decrease of the silicon’s work function while that of Cs⁺ and Si⁺ decrease exponentially, as expected by the electron tunneling model.     

Cross sections for transfer ionization in ion-helium collisions

A simple model has been developed within the independent-particle model (IPM) based on the Bohr-Lindhard model and classical statistical model. Cross sections for transfer ionization of helium by ions A^q+ (q = 1-3) are calculated for impact energies between 10 and 6000 keV/u. The calculated cross sections are in good agreement with the experimental data of helium by He^(1-2)+ and Li^(1-3)+.     

Atomic data and spectral line intensities for S XIII

Electron impact collision strengths, energy levels, oscillator strengths, and spontaneous radiative decay rates are calculated for S XIII. The configurations used are 2s², 2s2p, 2p², 2l3l′, 2l4l′ and 2s5l′, with l = s, p and l′ = s, p, d, giving rise to 92 fine-structure levels in intermediate coupling. Collision strengths are calculated at seven incident energies (10, 20, 45, 90, 135, 180, and 225 Ry) for the transitions within the three lowest configurations, and five incident energies (45, 90, 135, 180, and 225 Ry) for transitions between the lowest five levels and the n = 3, 4, 5 configurations. Calculations have been carried out using the distorted wave approximation. Excitation rate coefficients are calculated as a function of electron temperature by assuming a Maxwellian electron velocity distribution. Using the excitation rate coefficients and the radiative transition rates of the present work, and R-matrix results for the 2s², 2s2p, 2p² configurations available in the literature, statistical equilibrium equations for level populations are solved at electron densities covering the range of 10⁸-10¹⁴ cm⁻³ at an electron temperature of log T_e(K) = 6.4, corresponding to the maximum abundance of S XIII. Spectral line intensities are calculated, and their diagnostic relevance is discussed. Observed line ratios indicate electron temperatures of the emitting plasma close to log T_e(K) = 6.4. This dataset will be made available in the next version of the CHIANTI database.     

Electron impact collision strengths and oscillator strengths for Ge-, Ga-, Zn-, Cu-, Ni-, and Co-like Au ions

Energy levels, oscillator strengths, and electron impact collision strengths have been calculated for Ge-, Ga-, Zn-, Cu-, Ni-, and Co-like Au ions. For Ni-like Au, these atomic data are obtained among the levels belonging to the configurations of ([Ne])3s²3p⁶3d¹⁰, 3s²3p⁶3d⁹nl, 3s²3p⁵3d¹⁰nl, and 3s 3p⁶3d¹⁰nl (n = 4, 5; l = 0, 1, … , n − 1). For other Au ions, more levels have been obtained with special attention to atomic data up to transitions of 5f → 3d for emission or 3d → 5f for absorption. Configuration interactions are taken into account for all levels included. Collision strengths have been obtained at 20 scattered electron energies (5-40,000 eV) and they are listed at six representative energies of 100, 500, 1000, 5000, 10,000, and 20,000 eV in this work. Effective collision strengths have been obtained by assuming a Maxwellian electron velocity distribution at 10 representative temperatures ranging from 500 to 5000 eV. The present dataset should be adequate for most applications. The energy levels are expected to be accurate to within 0.5%, while oscillator strengths and collision strengths for strong transitions are probably accurate to better than 20%. The complete dataset is available electronically from http://www.astronomy.csdb.cn/EIE/.     

Influence of heat input waveform on transient critical heat flux of subcooled water flow boiling in a short vertical tube

The transient critical heat fluxes (CHFs) of the subcooled water flow boiling for ramp-wise heat input [Q = αt, α = 6.21 × 10⁸ to 1.63 × 10¹² W/m³ s, (q ≅ 1.08 × 10⁷ to 6.00 × 10⁷ W/m²)] and stepwise one [Q = Q_s, Q_s = 0 W/m³ at t = 0 s and Q_s = 2.95 × 10¹⁰ to 7.67 × 10¹⁰ W/m³ at t > 0 s, (q = 0 W/m² at t = 0 s and q ≅ 1.61 × 10⁷ to 3.87 × 10⁷ W/m² at t > 0 s)] with the flow velocities (u = 4.0-13.3 m/s), the inlet subcoolings (ΔT_sub,in = 86.8-153.3 K) and the inlet pressures (P_in = 742.2-1293.4 kPa) are systematically measured by an experimental water loop comprised of a pressurizer. The SUS304 tubes of inner diameters (d = 3, 6 and 9 mm), heated lengths (L = 33.15, 59.5 and 49.3 mm), L/d (=11.05, 9.92 and 5.48), and wall thickness (δ = 0.5, 0.5 and 0.3 mm) respectively with the rough finished inner surface (surface roughness, Ra = 3.18 μm) are used in this work. The experimental errors in the subcooling measure and the pressure one are ±1 K and ±1 kPa, while in the heat flux it is ±2%. The transient CHF data for the ramp-wise heat input and the stepwise one are compared with those for the exponentially increasing heat input (Q = Q₀ exp(t/τ), τ = 16.82 ms to 15.52 s) previously obtained and the dominant variables on transient CHF for heat input waveform difference are confirmed. The transient CHF data are compared with the values calculated by the steady state CHF correlations against inlet and outlet subcoolings, and the applicability of steady state CHF correlations is confirmed extending its possible validity for the reduced time, ω_p, down to 800 ms. The transient CHF data are compared with the values calculated by the transient CHF correlations against inlet and outlet subcoolings, and the influence of heat input waveform on transient CHF is clarified based on the experimental data for the ramp-wise heat input, the stepwise one and the exponentially increasing one. The dominant mechanisms of the subcooled flow boiling critical heat flux for the ramp-wise heat input, the stepwise one and the exponentially increasing one are discussed.     

Electrical properties of silicon diodes with pn junctions irradiated with Au swift heavy ions

Electrical properties of silicon diodes with p⁺n junctions irradiated with ¹⁹⁷Au⁺²⁶ swift heavy ions (energy E = 350 MeV, fluences of 10⁷ cm⁻² and 10⁸ cm⁻²) and silicon diodes irradiated with electrons (energy E = 3.5 MeV, fluences of 10¹⁵ cm⁻², 5 × 10¹⁵ cm⁻² and 10¹⁶ cm⁻²) have been investigated. Frequency dependences of the impedance, current-voltage characteristics and switching characteristics of these devices have been studied. Irradiation of the diodes with ¹⁹⁷Au⁺²⁶ ions at a fluence of 10⁸ cm⁻² leads to the formation of a quasi-continuous layer of irradiation-induced defects that enable a combination of characteristics such as a reverse resistance recovery time and direct voltage drop that are better than those for electron-irradiated diodes. Still, the irradiation of high-energy ions results in an increase in recombination currents that are larger than those obtained with electron irradiation, and causes more complicated frequency dispersion of the diode parameters.     

Atomic data and spectral line intensities for Mg IX

Electron impact collision strengths, energy levels, oscillator strengths, and spontaneous radiative decay rates are calculated for Mg IX. The configurations used are 2s², 2s2p, 2p², 2l3l′, 2l4l′ and 2s5l′, with l = s, p and l′ = s, p, d giving rise to 92 fine-structure levels in intermediate coupling. Collision strengths are calculated at seven incident energies (6, 12, 25, 50, 75, 100, and 125 Ry) for the transitions within the three lowest configurations, and five incident energies (25, 50, 75, 100, and 125 Ry) for transitions between the ground configuration and the n = 3, 4, 5 configurations. Calculations have been carried out using the distorted wave approximation. Excitation rate coefficients are calculated as a function of electron temperature by assuming a Maxwellian electron velocity distribution. Using the excitation rate coefficients and the radiative transition rates of the present work, and R-Matrix results for the 2s², 2s2p, 2p² configurations available in the literature, statistical equilibrium equations for level populations are solved at electron densities covering the range of 10⁸-10¹⁴ cm⁻³ at an electron temperature of log T_e (K) = 6.0, corresponding to the maximum abundance of Mg IX. Spectral line intensities are calculated, and their diagnostic relevance is discussed. Observed line ratios indicate electron temperatures of the emitting plasma which agree with log T_e (K) = 6.0. This dataset will be made available in the next version of the CHIANTI database.