Frequency dependence studies on the interface trap density and series resistance of HfO2 gate dielectric deposited on Si substrate: Before and after 50 MeV Li ions irradiation

We report the first investigation of the frequency dependent effect of 50 MeV Li³⁺ ion irradiation on the series resistance and interface state density determined from capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics in HfO₂ based MOS capacitors prepared by rf-sputtering. The samples were irradiated by 50 MeV Li³⁺ ions at room temperature. The measured capacitance and conductance were corrected for series resistance. The series resistance was estimated at various frequencies from 1 KHz to 1 MHz before and after irradiation. It was observed that the series resistance decreases from 6344.5 to 322 Ω as a function of frequency before irradiation and 8954-134 Ω after irradiation. The interface state density D_it decreases from 1.12 × 10¹² eV⁻¹ cm⁻² before irradiation to 3.67 × 10¹¹ eV⁻¹ cm⁻² after ion irradiation and further decreases with increasing frequency.     

Electrical properties changes induced by electron radiation at TiO2/Si interface

TiO₂/Si structures were fabricated by electron beam evaporation, and exposed to electron beam irradiation to investigate their electrical properties using the high frequency capacitance-voltage measurements. It was found that samples annealed in oxygen became more radiation resistant than un-annealed samples, which can be explained by the Ti valence variations induced by radiation. The samples were characterized by X-ray diffraction to show the Ti₂O₃ crystalline phase transformed to anatase-crystalline phase after oxygen annealing.     

Effect of irradiation by 140 Mev Ag ions on the optical and electrical properties of polypropylene/TiO2 composite

Changes in the optical, structural, dielectric properties and surface morphology of a polypropylene/TiO₂ composite due to swift heavy ion irradiation were studied by means of UV–visible spectroscopy, X-ray diffraction, impedance gain phase analyzer and atomic force microscopy. Samples were irradiated with 140 MeV Ag¹¹⁺ ions at fluences of 1 × 10¹¹ and 5 × 10¹² ions/cm². UV–visible absorption analysis reveals a decrease in optical direct band gap from 2.62 to 2.42 eV after a fluence of 5 × 10¹² ions/cm². X-ray diffractograms show an increase in crystallinity of the composite due to irradiation. The dielectric constants obey the Universal law given by ε α f ⁿ⁻¹, where n varies from 0.38 to 0.91. The dielectric constant and loss are observed to change significantly due to irradiation. Cole–cole diagrams have shown the frequency dependence of the complex impedance at different fluences. The average surface roughness of the composite decreases upon irradiation.     

Depth profiling of Al2O3 + TiO2 nanolaminates by means of a time-of-flight energy spectrometer

Atomic layer deposition (ALD) is currently a widespread method to grow conformal thin films with a sub-nm thickness control. By using ALD for nanolaminate oxides, it is possible to fine tune the electrical, optical and mechanical properties of thin films. In this study the elemental depth profiles and surface roughnesses were determined for Al₂O₃ + TiO₂ nanolaminates with nominal single-layer thicknesses of 1, 2, 5, 10 and 20 nm and total thickness between 40 nm and 60 nm. The depth profiles were measured by means of a time-of-flight elastic recoil detection analysis (ToF-ERDA) spectrometer recently installed at the University of Jyväskylä. In TOF-E measurements ⁶³Cu, ³⁵Cl, ¹²C and ⁴He ions with energies ranging from 0.5 to 10 MeV, were used and depth profiles of the whole nanolaminate film could be analyzed down to 5 nm individual layer thickness.     

Growth of TiO2 surfaces following low energy (<40 eV) atom and small cluster bombardment

Low energy (10-40 eV) interaction of small Ti_xO_y clusters with a rutile (1 1 0) substrate was investigated using molecular dynamics with the aim of determining the influence of various parameters on surface growth and defect formation. Rutile growth was simulated through depositing randomly selected clusters with energies in the tens of eV range. Long time scale evolution was approximated through heating the substrate. A modified second-moment-Buckingham-QEq (SMB-Q) empirical potential was developed for the purpose. Crystal growth on amorphous and anatase TiO₂ substrates was also considered. Grown lattice layers were compared by visual inspection along with radial distribution function (RDF) plots. Bombardment at an energy of around 20 eV in an oxygen rich atmosphere with a high proportion of bombarding clusters, TiO, TiO₂, as opposed to single atoms, was found to produce rutile growth with the best crystallinity.     

Study on effects of swift heavy ion irradiation on the crystal structure in CeO2 doped with Gd2O3

To simulate the effects of Gd₂O₃-doping and high-energy fission products in UO₂, Gd₂O₃-doped CeO₂ pellets were irradiated with 200-MeV Xe¹⁴⁺ ions. Doping and irradiation effects were analyzed using X-ray diffraction (XRD) and extended X-ray absorption fine structure (EXAFS). The lattice constant of CeO₂ decreases and the local structure is disordered with increased doping levels. However, the irradiation induces an expansion of the lattice and a disordering of atomic arrangement near the Gd atoms. The effects of the irradiation become more pronounced with increasing Gd₂O₃-dopant levels. Our results are compared with those of a study involving Er₂O₃-doped CeO₂.     

Effect of swift heavy ion irradiation on structural, optical and electrical properties of Cd2SnO4 thin films

Transparent conducting cadmium stannate thin films were prepared by spray pyrolysis method on Corning substrate at a temperature of 525 °C. The prepared films are irradiated using 120 MeV swift Ag⁹⁺ ions for the fluence in the range 1 × 10¹² to 1 × 10¹³ ions cm⁻² and the structural, optical and electrical properties were studied. The intensity of the film decreases with increasing ion fluence and amorphization takes place at higher fluence (1 × 10¹³ ions cm⁻²). The transmittance of the films decreases with increasing ion fluence and also the band gap value decreases with increasing ion fluence. The resistivity of the film increased from 2.66 × 10⁻³ Ω cm (pristine) to 5.57 × 10⁻³ Ω cm for the film irradiated with 1 × 10¹³ ions cm⁻². The mobility of the film decreased from 31 to 12 cm²/V s for the film irradiated with the fluence of 1 × 10¹³ ions cm⁻².     

Vacuum plasma etching of 1 wt% La2O3 dispersed tungsten

Vacuum plasma etching of 1 wt% La₂O₃ doped tungsten alloy surfaces were carried out to refine the surface morphology for enhancing its bonding characteristics with copper for fusion reactor components. Three different gas compositions containing argon with zero, 14.3 and 25 vol% hydrogen were used to carry out the plasma etching from 30 to 120 s on the given samples. Mitutoyo surface roughness (R_a) measurement, FORM TALYSURF and scanning electron microscopy (SEM) were employed to measure the changes in the surface roughness. Plasma etching with 14.3 vol% hydrogen mixture was found to be the best in micro-roughening the alloy surface. The maximum increase of 44% in R_a value was obtained with this gas mixture, when etched for 90 s.     

Positron annihilation study of structural effect on photocatalytic activity of mesoporous TiO2 thin films

Mesoporous TiO₂ films were synthesized by using triblock copolymers via a sol-gel process in aqueous solution. It was found that a film calcined at 600 °C has the highest photocatalytic activity. By application of positron annihilation Doppler broadening spectroscopy combined with XRD, SEM, and N₂ adsorption desorption techniques, the film structural properties were examined systematically. It is revealed that an excellent photocatalytic activity could be achieved only if a film maintains a suitable TiO₂ grain size, i.e. ∼7.5 nm in the present study, a median specific surface area and a high crystallinity in anatase state.     

Irradiation effect on dielectric properties and electrical conductivity of Au/SiO2/n-Si (MOS) structures

The Au/SiO₂/n-Si (MOS) structures were exposed to beta-ray irradiation to a total dose of 30 kGy at room temperature. Irradiation effect on dielectric properties of MOS structures were investigated using capacitance−voltage (C−V) and conductance−voltage (G/ω−V) characteristics. The C−V and G/ω−V measurements carried out in the frequency range from 1 kHz to 10 MHz and at various radiation doses, while the dc voltage was swept from positive bias to negative bias for MOS structures. The dielectric constant (ε′), dielectric loss (ε″), loss factor (tan δ) and ac electrical conductivity (σ_ac) were calculated from the C−V and G/ω−V measurements and plotted as a function of frequency at various radiation doses. A decrease in the ε′ and ε″ were observed when the irradiation dose increased. The decrease in the ε′ and ε″ of irradiated MOS structures in magnitude is explained on the basis of Maxwell−Wagner interfacial polarization. Also, the σ_ac is found to decrease with increasing radiation dose. In addition, the values of the tan δ decrease with increasing radiation dose and give a peak. From the experimental results, it is confirmed that the peak of loss tangent is due to the interaction between majority carriers and interface states which induced by radiation.     

Nanostructuring of BaF2 (1 1 1) surfaces by single slow highly charged ions

The creation of surface nanostructures in BaF₂ (1 1 1) surfaces was studied after irradiation with slow highly charged Xe ions from the Dresden-EBIT (electron beam ion trap). After irradiation, the crystals were investigated by scanning force microscopy (SFM). Using specific ion parameters, the topographic images show nanohillocks emerging from the surface. Additionally, we used the technique of selective chemical etching to reveal the lattice damage created by ion energy deposition below and above threshold needed for surface hillocks formation. The role of both potential and kinetic energy as well as a comparison with results for swift heavy ion irradiations of BaF₂ single crystals are presented.     

Void superlattice formation in electron irradiated CaF2: Theoretical analysis

CaF₂ is widely adopted as deep-UV window material and thin film optical coating. The void superlattice was observed experimentally under electron irradiation at room temperature. We performed kinetic Monte Carlo (kMC) simulations of the initial stages of the process when short- and intermediate-range order of defects in small Ca colloids and larger interstitial aggregates (F₂ gas voids) is created. The kMC model includes fluorine interstitial-vacancy pair creation, defect diffusion, similar defect attraction and dissimilar defect recombination. Special attention is paid to the statistical analysis of the defect aggregate distribution functions under different conditions (dose rate, defect migration and recombination rates). These simulations demonstrate that under certain conditions the dissimilar aggregate recombination is strongly suppressed which stimulates growth of mobile interstitial aggregates that is a precondition for further void ordering into a superlattice.     

γ辐照联合H_2O_2处理污泥滤液的研究

采用60 Coγ射线辐照处理污泥滤液,通过对比处理前后化学需氧量(COD)、紫外可见吸光度和浑浊度的变化,研究了辐照处理中初始pH、初始H2O2浓度和吸收剂量对污泥滤液处理效果的影响。结果表明:在相同吸收剂量和初始H2O2浓度条件下,酸性条件更利于CODCr的降低;γ辐照联合H2O2处理存在显著协同效应,吸收剂量为18.75kGy、初始H2O2浓度为2mmol/L时,污泥滤液CODcr去除率达70.4%,浑浊度下降94.9%。     

Effects of swift heavy ion irradiation on the structure of Er2O3-doped CeO2

In order to simulate the effects of burnable poison doping on the fission fragment damage of UO₂ nuclear fuels, Er₂O₃-doped CeO₂ pellets were irradiated with 200 MeV Xe¹⁴⁺ ions. The irradiation effect was measured by means of X-ray diffraction (XRD). The expansion of lattice and the disordering of atomic arrangement due to the irradiation become more remarkable with increasing the concentration of the Er₂O₃ dopant.     

Study of the magnetic modifications of Fe3O4 ferrite thin films induced by 2.03 GeV Kr ions irradiation

The effect of 2.03 GeV Kr²⁶⁺ ions irradiation on antiphase boundaries (APBs) of polycrystalline Fe₃O₄ ferrite thin films has been investigated. The structure, magnetic and electrical transport properties of samples were characterized. The initial crystallographic structure of the Fe₃O₄ remains unaffected after Kr-ion irradiation, but the magnetic and electrical transports properties are sensitive to swift heavy ions (SHI) irradiation and exhibit different behaviors depending on the Kr-ion fluence range. The energy deposition is mainly due to the electronic energy loss (S_e) and the large value of energy transferred induces an unusual density of defects, stress and heat annealing effect in the samples, which can affect on the arrangement of magnetic moments and APBs density strongly. On the basis of our observations we conclude that the production, accumulation and free of the defects and stress induced by SHI irradiation is more dominant in the case of the magnetic and electrical transport properties modifications of the Fe₃O₄ thin films.     

Effect of thermal spike energy created in CuFe2O4 by 150 MeV Ni swift heavy ion irradiation

Effects of 150 MeV Ni¹¹⁺ swift heavy ion (SHI) irradiation on copper ferrite nanoparticles have been studied at the fluences of 1 × 10¹¹, 1 × 10¹², 1 × 10¹³, 1 × 10¹⁴ and 5 × 10¹⁴ ions/cm². The XRD pattern shows the irradiation fluence dependant preferential orientation. Scanning electron microscope analysis displays fine blocks of material for pristine while partial agglomeration on irradiation. Notably, a large number of holes are present at the fluence of 5 × 10¹⁴ ions/cm². The magnetization measurements performed in these samples exposes that the coercivity and remanence magnetization value increases due to the magnetocrystalline anisotropy up to the fluence of 1 × 10¹³ ions/cm². At 1 × 10¹⁴ ions/cm² fluence, the induced thermal energy overcomes the magnetocrystalline anisotropy constant and causes a decrease in coercivity and remanence values. The saturation magnetization decreases up to the fluence of 1 × 10¹³ ions/cm² and then it increases for further irradiation. The change of crystalline orientation observed from XRD, the creation of holes from SEM and the change in magnetic properties are discussed on the basis of electro-phonon coupling and it invokes the thermal spike theory.     

Characterization of structure and distortion in the manganese ions implanted TiO2 thin films

TiO₂ thin films were prepared by direct current magnetron sputtering on glass substrates, and then implanted by manganese ions, and finally annealed at different temperatures. They are identified as an anatase structure by XRD, and crystallization of the films is better and better as the annealing temperature increases. SEM images are shown that the grain size of the films will grow big and big with annealing temperature increasing. The EDX measurement indicated that the concentration of manganese was about 4.68%. The HRTEM was used to analyze the fine anatase structure of the Mn-TiO₂ composite film, and edge dislocations were further found in the HRTEM image, which could be attributed to the manganese ions implantation effect.     

Effect of 200 MeV Ag ion irradiation on structural and electrical transport properties of Fe3O4 thin films

Thin films of Fe₃O₄ have been deposited on single crystal MgO(1 0 0) and Si(1 0 0) substrates using pulsed laser deposition. Films grown on MgO substrate are epitaxial with c-axis orientation whereas, films on Si substrate are highly 〈1 1 1〉 oriented. Film thicknesses are 150 nm. These films have been irradiated with 200 MeV Ag ions. We study the effect of the irradiation on structural and electrical transport properties of these films. The fluence value of irradiation has been varied in the range of 5 × 10¹⁰ ions/cm² to 1 × 10¹² ions/cm². We compare the irradiation induced modifications on various physical properties between the c-axis oriented epitaxial film and non epitaxial but 〈1 1 1〉 oriented film. The pristine film on Si substrate shows Verwey transition (T_V) close to 125 K, which is higher than generally observed in single crystals (121 K). After the irradiation with the 5 × 10¹⁰ ions/cm² fluence value, T_V shifts to 122 K, closer to the single crystal value. However, with the higher fluence (1 × 10¹² ions/cm²) irradiation, T_V again shifts to 125 K.     

10 MeV Au ion irradiation effects in an MgO-HfO2 ceramic-ceramic (CERCER) composite

Room temperature ion irradiation damage studies were performed on a ceramic composite intended to emulate a dispersion nuclear fuel. The composite is composed of 90-mole% MgO and 10-mole% HfO₂. The as-synthesized composite was found to consist of Mg₂Hf₅O₁₂ (and some residual HfO₂) particles embedded in an MgO matrix. X-ray diffraction revealed that nearly all of the initial HfO₂ reacted with some MgO to form Mg₂Hf₅O₁₂. Ion irradiations were performed using 10 MeV Au³⁺ ions at room temperature over a fluence range of 5 × 10¹⁶-5 × 10²⁰ Au/m². Irradiated samples were characterized using both grazing incidence X-ray diffraction (GIXRD) and transmission electron microscopy (TEM), the latter using both selected-area electron diffraction (SAED) and micro-diffraction (μD) on samples prepared in cross-sectional geometry. Both GIXRD and TEM electron diffraction measurements on a specimen irradiated to a fluence of 5 × 10²⁰ Au/cm², revealed that the initial rhombohedral Mg₂Hf₅O₁₂ phase was transformed into a cubic-Mg₂Hf₅O₁₂ phase. Finally, it is important to note that at the highest ion fluence used in this investigation (5 × 10²⁰ Au/m²), both the MgO matrix and the Mg₂Hf₅O₁₂ second phase remained crystalline.     

Application of combined neutron diffraction and impedance spectroscopy for in-situ structure and conductivity studies of La2Mo2O9

In-situ neutron diffraction combined with AC impedance spectroscopy was applied successfully to investigate the correlation between crystal structure and electrical properties of the La₂Mo₂O₉ oxide ion conducting electrolyte material. Neutron diffraction patterns were collected as a function of temperature while the AC impedance spectra were recorded simultaneously using a modified sample environment to monitor the conductivity change of the sample. A close relationship between unit cell parameters and the bulk conductivity was observed, confirming that the oxygen transport is dependent on the lattice structure. With the transition from the low temperature alpha to the high temperature beta phase, expansion of the crystal structure makes more space available for oxygen transport, leading to a dramatic increase of the ionic conductivity. The successful application of this technique provides a new method to simultaneously investigate crystal structure and electrical properties in electro-ceramics in the future.