PL and XPS study of radiation damage created by various slow highly charged heavy ions on GaN epitaxial layers

Photoluminescence (PL) spectrum, in conjunction with X-ray photoelectron spectroscopy (XPS) is used to evaluate the surface damage of GaN layer by highly-charged Xe^q+ (18 ? q ? 30), Ar^q+ (6 ? q ? 16) and Pb^q+ (q = 25,35) ions. The intensity of PL emission of GaN layer, including near band-edge peak and yellow luminescence, decreases with increasing fluence and charge state of the incident ions. Finally the PL emission is completely quenched after irradiation to high fluences at high charge state. A new peak at 450 nm appeared in PL spectra of the specimens irradiated with Xe¹⁸⁺, Ar⁶⁺ and Ar¹¹⁺, indicating that radioactive recombination within donor-acceptor pairs (DAPs) during irradiation. After irradiation, XPS spectra show N deficient or Ga rich on GaN surface and XPS spectra of Ga3d core levels indicate spectral peak evidently shifts from a Ga-N to Ga-Ga and Ga-O bond. The relative content of Ga-N bond decreases and the content of Ga-Ga bond increases with the increase of ion fluence and ion charge state. The binding energy of Ga3d_5/2 electron corresponding to Ga-Ga bond of the irradiated GaN film is found to be smaller than that of metallic Gallium (Ga⁰), which can be attributed to irradiation damage.     

Damage accumulation in gallium nitride irradiated with various energetic heavy ions

In this work a study of damage production in gallium nitride via elastic collision process (nuclear energy deposition) and inelastic collision process (electronic energy deposition) using various heavy ions is presented. Ordinary low-energy heavy ions (Fe⁺ and Mo⁺ ions of 110 keV), swift heavy ions (²⁰⁸Pb²⁷⁺ ions of 1.1 MeV/u) and slow highly-charged heavy ions (Xeⁿ⁺ ions of 180 keV) were employed in the irradiation. Damage accumulation in the GaN crystal films as a function of ion fluence and temperature was studied with RBS-channeling technique, Raman scattering technique, scanning electron microscopy (SEM) and transmission electron microscopy (TEM).For ordinary low-energy heavy ion irradiation, the temperature dependence of damage production is moderate up to about 413 K resulting in amorphization of the damaged layer. Enhanced dynamic annealing of defects dominates at higher temperatures. Correlation of amorphization with material decomposition and nitrogen bubble formation was found. In the irradiation of swift heavy ions, rapid damage accumulation and efficient erosion of the irradiated layer occur at a rather low value of electronic energy deposition (about 1.3 keV/nm³), which also varies with irradiation temperature. In the irradiation of slow highly-charged heavy ions (SHCI), enhanced amorphization and surface erosion due to potential energy deposition of SHCI was found. It is indicated that damage production in GaN is remarkably more sensitive to electronic energy loss via excitation and ionization than to nuclear energy loss via elastic collisions.     

Single- and multiple-electron loss cross-sections for fast heavy ions colliding with neutrals: Semi-classical calculations

Extensive calculations of single, multiple and total electron-loss cross-sections of fast heavy ions in collisions with neutral atoms are performed in the semi-classical approximation using the DEPOSIT code based on the energy deposition model and statistical distributions for ionization probabilities. The results are presented for Ar¹⁺, Ar²⁺, Kr⁷⁺, Xe³⁺, Xe¹⁸⁺, Pb²⁵⁺ and U^q+ (q = 10, 28, 39, 62) ions colliding with H, N, Ne, Ar, Kr, Xe and U atoms at energies E > 1 MeV/u and compared with available experimental data and the n-particle classical-trajectory Monte Carlo (nCTMC) calculations. The results show that the present semi-classical model can be applied for estimation of multiple and total electron-loss cross-sections within accuracies of a factor of 2.From calculated data for the total electron-loss cross-sections σ_tot, their dependencies on relative velocity v, the first ionization potential I₁ of the projectile and the target atomic number Z_A are found and a semi-empirical formula for σ_tot is suggested. The velocity range, where the semi-classical approximation can be used, is discussed.     

Molybdenum L-shell X-ray production by 350-600 keV Xe (q = 25-30) ions

Molybdenum L-shell X-rays were produced by Xe^q+ (q = 25-30) bombardment at low energies from 2.65 to 4.55 keV/amu (350-600 keV). We observed a kinetic energy threshold of Mo L-shell ionization down to 2.65-3.03 keV/amu (350-400 keV). The charge state effect of the incident ions was not observed which shows that the ions were neutralized, reaching an equilibrium charge state and losing their initial charge state memory before production of L-shell vacancies resulted in X-ray production. The experimental ionization cross sections were compared with those from Binary Encounter Approximation theory. Taking into account projectile deflection in the target nuclear Coulomb field, the ionization cross section of Mo L-shell near the kinetic energy threshold was well described.     

Electron capture in intermediate-to-fast heavy ion collisions with neutral atoms

Electron capture processes of heavy ions, like Ge^q+, Xe^q+, Pb^q+, and U^q+, respectively, with the charge q ≈ 10–40, occurring in collisions with gaseous targets are considered in the E = 0.1–100 MeV/u projectile energy range. Calculations of single-electron capture cross sections are performed using the CDW and the CAPTURE computer codes. These are compared with available experimental data and CTMC (Classical-Trajectory Monte Carlo) calculations. Although the overall agreement is found to be within a factor of two, in some cases of heavy many-electron projectiles, e.g., U²⁸⁺ + N₂, Ar collisions, experimental cross sections at high energies are far smaller than theoretical predictions. Moreover, for these collision systems the observed energy dependencies are quite different from each other. Possible reasons for this behavior and how the theoretical models can be improved are discussed.     

Nano-structure formation due to impact of highly charged ions on HOPG

Highly ordered pyrolitic graphite (HOPG) was irradiated with slow highly charged Ar^q+ and Xe^q+ ions in a kinetic energy range of 150-360 keV and has been observed by scanning probe microscopy. Nano-sized hillock-like structures are found for all charge states and kinetic energies with both the scanning tunneling microscope and the atomic force microscope. However in the latter case, the dependence of the detected structures on scan conditions points towards a surface modification which manifests itself only in frictional forces and therefore in height measurement artifacts. Furthermore the generated defects are not stable but can be erased by continuous scanning in contact mode.     

Non-kinetic damage on insulating materials by highly charged ion bombardment

We have measured the damage caused by the impact of low velocity, highly charged ions on insulating surfaces. Atomic force microscopy allows us to observe directly the surface topography with nanometer resolution. Using constant velocity (100 keV) Xe^q+ ions (25 ⩽ q ⩽ 50) impinging on mica, we observe damage caused by single ion impacts. Impact sites typically are circular hillocks. Within the range and accuracy of the data, the height and volume of the damaged regions are well approximated by a linear function of ion potential energy.     

Relativistic many-body Møller-Plesset perturbation theory calculations of the energy levels and transition rates in Na-like to P-like Xe ions

Relativistic multireference many-body perturbation theory calculations have been performed for Xe⁴³⁺ to Xe³⁹⁺ ions, resulting in energy levels, electric dipole transition rates, and level lifetimes. The second-order many-body perturbation theory calculation of energy levels included mass shifts, the frequency-dependent Breit correction, and Lamb shifts. The calculated transition energies and E1 transition rates are used to present synthetic spectra in the extreme ultraviolet range for some of the Xe ions.     

Fabrication of nanowires by varying energy microbeam lithography using heavy ions at the TIARA

In TIARA facility of Japan Atomic Energy Agency (JAEA) Takasaki, we have produced three-dimensional micro/nano-structures with high aspect ratio using cross linking process based on negative resist such as SU-8 by a technique of mask less ion beam lithography. By bombarding high energy heavy ions such as 450 MeV Xe²³⁺ to SU-8, on the other hand, it appeared that a nanowire could be produced just with a single ion hitting. Then we tried to produce nanowires, of which both ends were fixed in the three-dimensional structure. This paper shows a preliminary experiment for this purpose using a combination of 15 MeV Ni⁴⁺ ion microbeam patterning and the 450 MeV ¹²⁹Xe²³⁺ hitting on SU-8.     

AODO: Secondary ion emission and surface modification

In order to study the sputtering of secondary ions from well characterized surfaces, we constructed a new UHV system named AODO. It consists of a detector chamber, a target preparation and analysis chamber, and a target transfer rod. We present the lay-out of this new instrument. The detector allows measuring the time-of-flight of emitted secondary ions and their position on a 2D imaging detector (XY-TOF imaging technique). The analysis chamber can be used to study surface modification by means of LEED (low energy electron diffraction). We show preliminary results of the evolution of the LEED patterns as a function of the projectile fluence during irradiation of HOPG (highly oriented pyrolytic graphite) with slow Xe¹⁴⁺ ions at ARIBE (the low energy, highly charged ion beam line of the French heavy ion accelerator GANIL).     

Atomic collision studies at moderate projectile velocities using highly charged,decelerated heavy ions from the GSI-UNILAC

Beams of highly ionized, very heavy atoms at moderate velocities have been produced at the UNILAC using the acceleration-stripping-deceleration method. The available ion species range from Kr³³⁺ to U⁶⁶⁺ in the energy region between 2 and 5 MeV/u. A survey on first experiments at GSI using these moderate velocity, few electron, heavy ion beams is given. The effectiveness of the method is demonstrated for Xe^q+ ?Xe collision experiments with 41 ≤ q ≤ 45. Results on vacancy transfer between inner quasimolecular levels for close collisions, and on distant collision electron capture are reported.     

Electron emission by highly charged neon and xenon ions on fusion-relevant tungsten and graphite surfaces

Here we report highly charged ⁴⁰Ne^q+ (q = 3-8) and ¹²⁹Xe^q+ (q = 10-30) ion-induced secondary electron emission on the tungsten and highly oriented pyrolytic graphite (HOPG) surfaces. The total secondary electron yield is measured as a function of the potential energy of incident ion. The experimental data is used to separate contributions of kinetic and potential electron yields. We estimate roughly 10% of ion’s potential energy is consumed in potential electron emission. The rest of the ion’s potential energy is responsible for the sputtering and material modification.     

HICS: Highly charged ion collisions with surfaces

The layout of a new instrument designed to study the interaction of highly charged ions with surfaces, which consists of an ion source, a beamline including charge separation and a target chamber, is presented here. By varying the charge state and impact velocity of the projectiles separately, the dissipation of potential and kinetic energy at or below the surface can be studied independently. The target chamber offers the use of tunable metal-insulator-metal devices as detectors for internal electronic excitation, a time-of-flight system to study the impact induced particle emission and the possibility to transfer samples in situ to an ultra high vacuum (UHV) scanning probe microscope. Samples and detectors can be prepared in situ as well. As a first example data on graphene layers on SrTiO₃ which have been irradiated with Xe³⁶⁺ are presented.     

p+~(107,109)Ag核反应数据的计算和分析

本工作通过理论计算的方法获得了一套适合入射能量为从阈值到200 MeV的p+107,109 Ag核反应全套微观数据。首先,使用光学模型理论进行调参计算,得到了一套适合入射能量为从阈值到340MeV的p+107,109 Ag核反应Becchetti-Greenlees光学势参数,这套参数与实验数据符合很好。其次,在这套光学势参数的基础上用扭曲波玻恩近似对入射能量从阈值到200MeV的p+107,109 Ag直接非弹性散射截面进行了计算。最后,使用核反应统计理论计算了入射能量从阈值到200MeV的p+107,109 Ag核反应各反应道的截面和出射粒子能谱,得到了该能区p+107,109 Ag核反应全套微观数据。将所有计算值与实验数据进行比较,结果表明,所得到的全套微观数据与实验数据符合很好。     

Dielectronic satellite spectra for hydrogen-like ions

The wavelengths, radiative transition rates, Auger rates, satellite intensity factors, and fluorescence yields are presented for dielectronic satellites of nine hydrogen-like ions ranging from Ne⁹⁺ to Xe⁵³⁺. Dipole transitions from 2ln′l′ → 1sn″l″, where n′, n″ = 2, 3, 4, are included. In this work, relativistic multiconfiguration wave functions are used to calculate energy levels as well as the Auger and radiative transition rates.     

Ion mass effects on bombardment-induced disordering of γ'-Ni3Si

The kinetics of disordering of the ordered compound γ'-Ni₃Si during ion bombardment were investigated at a temperature of 270°C. The disordering followed first order kinetics and the rate constant was measured as a function of incident ion flux, ion energy, and ion mass. The rate constant varied approximately in direct proportion with the ion flux during bombardment with 1 MeV ⁸⁴Kr⁺-ions: from ~ 0.28 min ^?1 at ~ 70 nA/cm² to ~ 50 min ^?1 at ~ 4.4 μA/cm ². During bombardment with a flux of $\text{~ 1 μA}\text{cm}{}^2$ of ¹³²Xe⁺-ions, the rate constant was directly proportional to the calculated near-surface damage ra te. It varied from ~ 50 min ^?1 for 200 KeV ions with calculated damage rates of ~ 2.3 × 10^?1 dpa to ~ 1.8 min ^?1 for 3 MeV ions with damage rates of 2 × 10^?3dpa/s. The disordering rate was also observed to be directly proportional to the near surface damage rate for heavier mass ions (⁴⁰Ar⁺, ⁸⁴Kr⁺ and ¹³²Xe⁺); the ratio of disordering rate to damage rate was ~ 17. This ratio dropped to ~ 3 for ²⁰Ne⁺-ion bombardment, and to ~ 0.4 for bombardment with ⁴He⁺-ions. The decrease in the ratio with decreasing mass is discussed in terms of cascade size, replacement-to-displacement ratio, and random recombination.     

Alkali ion scattering from Ag(0 0 1) and Ag thin films at low and hyperthermal energies

We have investigated the scattering of K⁺ and Cs⁺ ions from a single crystal Ag(0 0 1) surface and from a Ag-Si(1 0 0) Schottky diode structure. For the K⁺ ions, incident energies of 25 eV to 1 keV were used to obtain energy-resolved spectra of scattered ions at θ_i = θ_f = 45°. These results are compared to the classical trajectory simulation safari and show features indicative of light atom-surface scattering where sequential binary collisions can describe the observed energy loss spectra. Energy-resolved spectra obtained for Cs⁺ ions at incident energies of 75 eV and 200 eV also show features consistent with binary collisions. However, for this heavy atom-surface scattering system, the dominant trajectory type involves at least two surface atoms, as large angular deflections are not classically allowed for any single scattering event. In addition, a significant deviation from the classical double-collision prediction is observed for incident energies around 100 eV, and molecular dynamics studies are proposed to investigate the role of collective lattice effects. Data are also presented for the scattering of K⁺ ions from a Schottky diode structure, which is a prototype device for the development of active targets to probe energy loss at a surface.     

Nanostructuring of BaF2 (1 1 1) surfaces by single slow highly charged ions

The creation of surface nanostructures in BaF₂ (1 1 1) surfaces was studied after irradiation with slow highly charged Xe ions from the Dresden-EBIT (electron beam ion trap). After irradiation, the crystals were investigated by scanning force microscopy (SFM). Using specific ion parameters, the topographic images show nanohillocks emerging from the surface. Additionally, we used the technique of selective chemical etching to reveal the lattice damage created by ion energy deposition below and above threshold needed for surface hillocks formation. The role of both potential and kinetic energy as well as a comparison with results for swift heavy ion irradiations of BaF₂ single crystals are presented.     

SIMS depth profiling of multilayer metal-oxide thin films — improved accuracy using a xenon primary ion

Multilayer thin films containing silver and copper, sandwiched in a metal oxide, have been depth profiled by secondary ion mass spectrometry (SIMS) using primary ions of differing mass, energy and chemical reactivity. These results were compared for accuracy with those obtained by Rutherford backscattering spectrometry (RBS). The use of O₂⁺ or O^? as primary ions resulted in severe distortion of the silver ion intensity distribution in the SIMS profile of a ZnO/Ag/ZnO thin film on glass; O₂⁺ bombardment at energies from 3–10 keV resulted in the detection of silver at the glass interface, while the use of O^? caused the silver to be detected closer to the outer surface than expected from RBS results. Primary beams of Ar⁺ and Xe⁺ gave progressively more accurate results for the Zn/Ag/Zn distribution; Xe⁺ at 5.0 keV energy produced profiles that agreed within 10% of RBS-derived values. The same beam conditions, used to profile a double silver layer in ZnO, resulted in some discrepancy in the position of the inner layer, compared to RBS results, and this was attributed to an enhanced sputter rate in the oxide under the outside metal film. Depth profiling of TiO₂/Cu/TiO₂ films with oxygen also resulted in significant distortion of the perceived position of the metal layer, and this was again significantly improved using Xe⁺ primary ions of 6–9 keV energy. The distorting effects of oxygen bombardment can be understood in terms of a migration of metal ions in an electrostatic field created by a charged surface. Ionization of the metallic layer is enhanced by the use of oxygen. By contrast, the use of rare gases reduces the production of ions from the metallic layer which can migrate prior to the onset of sputtering.     

Proton sputtering from polycrystalline Al surface interacting with highly charged ions at grazing incidence angle

Sputtering processes of protons from a polycrystalline Al surface interacting with Ar^q+ (q = 3-14) ions at a grazing incidence angle (∼0.5°) were investigated. The intensity of protons (I_H) detected in coincidence with scattered Ar atoms was measured as a function of q. I_H saturated at q ? 10, although it increased rapidly with q at 3 ? q ? 8. The angular distribution of protons with low kinetic energy (?2 eV) began to deviate from the cosine distribution and assumed a rather flat equidistribution as q increased. To analyze the sputtering processes of protons at the grazing incidence angle, a modified model of the “above-surface potential sputtering model” was proposed by considering image acceleration of projectile ions.