Investigations on the effect of 100 MeV Ni ions irradiated chloride vapour phase epitaxy (Cl-VPE) grown GaN epilayers

Gallium nitride (GaN) epilayers have been grown by chloride vapour phase epitaxy (Cl-VPE) technique and the grown GaN layers were irradiated with 100 MeV Ni ions at the fluences of 5 × 10¹² and 2 × 10¹³ ions/cm². The pristine and 100 MeV Ni ions irradiated GaN samples were characterized using X-ray diffraction (XRD), UV-visible transmittance spectrum, photoluminescence (PL) and atomic force microscopy (AFM) analysis. XRD results indicate the presence of gallium oxide phases after Ni ion irradiation, increase in the FWHM and decrease in the intensity of the GaN (0 0 0 2) peak with increasing ion fluences. The UV-visible transmittance spectrum and PL measurements show decrease in the band gap value after irradiation. AFM images show the nanocluster formation upon irradiation and the roughness value of GaN increases with increasing ion fluences.     

Study of 200 MeV Ag ion induced amorphisation in nickel ferrite thin films

Thin films of nickel ferrite of thickness ∼100 and 150 nm were deposited by pulsed laser deposition. The films were irradiated with a 200 MeV Ag¹⁵⁺ beam of three fluences 1 × 10¹², 2 × 10¹² and 4 × 10¹² ions/cm². X-ray diffraction showed a decrease in the intensity of peaks indicating progressive amorphisation with increased irradiation fluence. Fourier transform infra-red and Raman spectra of pristine and irradiated films were also recorded which showed a degradation of the crystallinity of the samples after irradiation. The damage cross section of the infra-red bands was determined. It was found that the two bands at 557 and 614 cm⁻¹ did not show similar behaviour with fluence.     

Structural disorder in sapphire induced by 90.3 MeV xenon ions

In our previous work [15], we have evidenced, using RBS-C, two effects in the aluminium sublattice of sapphire irradiated with 90.3 MeV xenon ions: a partial disorder creation that saturates at ∼40% followed above a threshold fluence by a highly disordered layer appearing behind the surface. In this work, by RBS-C analysis of the oxygen sublattice, we have observed only one regime of partial disorder creation that saturates at ∼60% in tracks of cross-section double of that found for the aluminium sublattice. Complementary analysis by X-ray diffraction shows that the lattice strain increases with the fluence until a maximum is reached about 7.5 × 10¹² ions/cm². For higher fluences, strain decreases first indicating a little stress relaxation in the material and tends afterwards, to remain constant. This stress relaxation is found to be related to the aluminium sublattice high disorder.     

Structural and optical study of irradiation effect in GaN epilayers induced by 308 MeV Xe ions

Wurtzite GaN epilayers irradiated at room temperature with 308 MeV ¹²⁹Xe³⁵⁺ ions to fluences of 1 × 10¹³ and 3 × 10¹³ cm⁻² have been studied by contact mode atomic force microscopy (AFM), high-resolution X-ray diffraction (HRXRD), micro-Raman scattering and photoluminescence (PL) spectroscopy. The AFM images showed that the surface of GaN films was etched efficiently due to the Xe ion irradiation. The initial step-terrace structure on GaN surface was eliminated completely at a fluence of 3 × 10¹³ cm⁻². HRXRD and Raman results indicated that the Xe ion irradiation led to a homogenous lattice expansion throughout the entire ∼3 μm-thick GaN films. The lattice expansion as well as the biaxial compressive stress of the films was increasing with the increase of ion fluence. PL measurements showed that a dominant yellow luminescence band in the as-grown GaN films disappeared, but a blue and a green luminescence bands were produced after irradiation. Based on these results, the strong electronic excitation effect of 308 MeV Xe ions in GaN is discussed.     

HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3 MeV Ne and 5.3 MeV Kr ions

In_0.15Ga_0.85N/GaN bilayers irradiated with 2.3 MeV Ne and 5.3 MeV Kr ions at room temperature were studied by high-resolution X-ray diffraction (HRXRD) and micro-Raman scattering. The Ne ion fluences were in the range from 1 × 10¹² to 1 × 10¹⁵ cm⁻², and the Kr ion fluences were in the range from 1 × 10¹¹ to 1 × 10¹³ cm⁻². Results show that the structures of both In_0.15Ga_0.85N and GaN layers remained almost unchanged for increasing fluences up to 1 × 10¹³ and 1 × 10¹² cm⁻² for Ne and Kr ion irradiations, respectively. After irradiation to higher fluences, the GaN layer was divided into several damaged layers with different extents of lattice expansion, while the In_0.15Ga_0.85N layer exhibited homogenous lattice expansion. The layered structure of GaN and the different responses to irradiation of the GaN and In_0.15Ga_0.85N layers are discussed.     

Physical and chemical response of 145 MeV Ne ion irradiated polymethylmethacrylate (PMMA) polymer

Characterization of ion induced modifications in the physical, chemical and structural properties of polymethylmethacrylate (PMMA) polymer induced by 145 MeV Ne⁶⁺ ions has been carried out by FTIR, UV-Visible, Differential scanning calorimetry (DSC) and X-ray diffraction. Heavy ion irradiation was carried out under a vacuum of ∼10⁻⁶ torr at Variable Energy Cyclotron Centre, Kolkata, India using a low beam current (∼15 nA). Ion fluences of 10¹⁰, 10¹¹, 10¹², 10¹³ ions/cm² were used. The optical band gap (E_g), calculated from the absorption edge of the UV-Vis spectra of these films in 200-800 nm region varied from 2.167 eV to 1.512 eV for virgin and irradiated samples. In FTIR spectra appreciable changes have been observed after irradiation, indicating the molecular fragmentation, cross-linking, formation of unsaturated groups and free radicals. DSC thermograms give information about the thermal stability and type of thermal reactions (exothermic/endothermic) on the application of heat to the polymer. XRD analyses show slight shift of peak position and significant changes in peak intensity. XRD results show a decrease of ∼4.12% in crystallite size of irradiated sample at the higher fluence of 10¹² ions/cm².     

Effect of swift heavy ion irradiation on hydrothermally synthesized hydroxyapatite ceramics

The effect of swift heavy ion irradiation on hydroxyapatite (HAp) ceramic - a bone mineral was investigated. The irradiation experiment was conducted using oxygen ions at energy of 100 MeV with three different fluences of 10¹², 10¹³, 10¹⁴ ions/cm². The irradiated samples were characterized by glancing angle X-ray diffraction (GXRD), atomic force microscopy (AFM), dynamic light scattering (DLS), photoluminescence spectroscopy (PL), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDAX). GXRD confirmed incomplete amorphisation of HAp with increase in fluence. There was considerable reduction in particle size on irradiation leading to nanosized HAp (upto 53 nm). PL studies showed emission in the visible wavelength region. The irradiated samples exhibited better bioactivity than the pristine HAp.     

Evidence of nanostructure formation in Ge oxide by crystallization induced by swift heavy ion irradiation

Ge oxide films were irradiated with 150 MeV Ag ions at fluences varying between 10¹² and 10¹⁴ ions/cm². The irradiation-induced changes were monitored by FT-IR spectroscopy, atomic force microscopy, X-ray diffraction and photoluminescence spectroscopy. The FT-IR spectra indicate stoichiometric changes and an increase in Ge content on irradiation. X-ray diffraction shows a crystallization of the irradiated films and presence of both Ge and GeO₂ phases. The Ge nanocrystal size, as calculated from Scherrer’s formula, was around 30 nm. The morphological changes, observed in atomic force microscopy, also indicate formation of nanostructures upon ion irradiation and a uniform growth is observed for a fluence of 1 × 10¹⁴ ions/cm².     

Photoluminescence and photoluminescence excitation studies in 80 MeV Ni ion irradiated MOCVD grown GaN

We report damage creation and annihilation under energetic ion bombardment at a fixed fluence. MOCVD grown GaN thin films were irradiated with 80 MeV Ni ions at a fluence of 1 × 10¹³ ions/cm². Irradiated GaN thin films were subjected to rapid thermal annealing for 60 s in nitrogen atmosphere to anneal out the defects. The effects of defects on luminescence were explored with photoluminescence measurements. Room temperature photoluminescence spectra from pristine sample revealed presence of band to band transition besides unwanted yellow luminescence. Irradiated GaN does not show any band to band transition but there is a strong peak at 450 nm which is attributed to ion induced defect blue luminescence. However, irradiated and subsequently annealed samples show improved band to band transitions and a significant decrease in yellow luminescence intensity due to annihilation of defects which were created during irradiation. Irradiation induced effects on yellow and blue emissions are discussed.     

Effect of 50 MeV Li ion irradiation on electrical, optical and mechanical properties of 4,4′-dimethylbenzophenone

4,4′-Dimethylbenzophenone (DMBP) single crystals were irradiated at room temperature and at liquid nitrogen temperature with 50 MeV Li³⁺ ions at fluences 1 × 10¹² and 1 × 10¹³ ions/cm². The dielectric constant and dielectric loss as a function of frequency of the applied ac field in the range from 20 Hz to 1 MHz and at temperatures ranging from 313 to 353 K were analyzed. The dielectric constant decreases with increase in frequency for all the temperatures. The dielectric constant and dielectric loss increase with fluence. Optical absorption was measured at different conditions. UV-Vis studies reveal the decrease in bandgap. The unirradiated as well as irradiated crystals were characterized by photoluminescence. Ion-induced changes were also studied with respect to their mechanical response using the Vicker’s microhardness technique and parameters including fracture toughness, brittleness index and yield strength are calculated.     

Spectroscopic and thermal studies of 8 MeV electron beam irradiated HPMC films

Radiation-induced changes in hydroxypropyl methylcellulose (HPMC) films under electron irradiation were investigated and correlated with dose. Polymer samples were irradiated in air at room temperature by an electron beam accelerator in the range of 0-100 kGy. Various properties of the irradiated films were studied using a Ultraviolet-Visible spectrophotometer and Fourier transform infrared spectroscopy and thermogravimetric analysis. Electron irradiation was found to induce changes in the physical, chemical and thermal properties, depending on the irradiation dose.     

Irradiation hardening in unalloyed and ODS molybdenum during low dose neutron irradiation at 300 °C and 600 °C

Unalloyed molybdenum and oxide dispersion strengthened (ODS) molybdenum were irradiated at 300 °C and 600 °C in HFIR to neutron fluences of 0.2, 2.1, and 24.3 × 10²⁴ n/m² (E > 0.1 MeV). The size and number density of voids and loops as well as the measured irradiation hardening and electrical resistivity were found to increase sub-linearly with fluence. This supports the idea that the formation of the extended defects that produce irradiation hardening in molybdenum is the result of a nucleation and growth process rather than the formation of sessile defects directly from the displacement damage cascades. This conclusion is further supported by molecular dynamics (MD) simulations of cascade damage. The unalloyed molybdenum had a low impurity interstitial content with less irradiation hardening and lower change in electrical resistivity than is observed for ODS Mo. This result suggests that high-purity can result in slightly improved resistance to irradiation embrittlement in molybdenum at low fluences.     

Electronic excitations induced modifications of structural and optical properties of ZnO-porous silicon nanocomposites

The influence of swift heavy ion (SHI) irradiation on structural and photoluminescence (PL) properties of ZnO nanocrystallites deposited into porous silicon (PS) templates by the sol-gel process was studied. The ZnO/PS nanocomposites were irradiated using 120 MeV Au ions at different fluences varying from 1 × 10¹² to 1 × 10¹³ ions/cm². The intensity of the X-ray diffraction peaks is suppressed at the high fluence, without evolution of any new peak. The PL emission from PS around 700 nm is found to decrease with increase in ion fluence, while the PL emission from deep level defects of ZnO nanocrystallites is increased with ion fluence. At the highest fluence, the observation of drastic increase in PL emission due to donor/acceptor defects in the region 400-600 nm and suppressions of XRD peaks could be attributed to the defects induced structural modifications of ZnO nanocrystallites.     

Oxygen defects created in CeO2 irradiated with 200 MeV Au ions

CeO₂ films were irradiated with 200 MeV Au ions in order to investigate the damages created by electronic energy deposition. In the Raman spectra of the ion-irradiated films, a broad band appears at the higher frequency side of the F_2g peak of CeO₂. The band intensity increases as ion fluence increases. Furthermore, the F_2g peak becomes asymmetric with a low-frequency tail. In order to understand the origin of these spectral changes, an unirradiated CeO₂ film was annealed in vacuum at 1000 °C. By comparing the results for the irradiation and for the annealing, it is concluded that the broad band obtained for irradiated samples contains the peak observed for the annealed sample. The F_2g peak becomes asymmetric with a low-frequency tail by the irradiation as well as the annealing. Therefore, the above-mentioned changes in the Raman spectra caused by 200 MeV Au irradiation is closely related to the creation of oxygen vacancies.     

Tailoring optical and electrical properties of MgO thin films by 1.5 MeV H implantation to fluences

Thin films of magnesia (MgO) with (1 0 0) dominant orientations were implanted with 1.5 MeV H⁺ ions at room temperature to various fluences of 10¹³, 10¹⁴ and 10¹⁵ ions/cm². X-ray analysis unambiguously showed crystallinity even after a peak damage fluence of 10¹⁵ ions/cm². Rutherford backscattering spectrometry combined with ion channeling (RBS/C) was used to analyze radiation damages and defect distributions. Optical absorption band observed at 5.7 eV in implanted films was assigned to the anion vacancies and the defect was completely disappeared on annealing at 450 °C. Number of F-type defects estimated was 9.42 × 10¹⁵ cm⁻² for the film implanted with 10¹⁵ ions/cm². DC electrical conductivity of 4.02 × 10⁻⁴ S cm⁻¹ was observed in the implanted region which was three orders higher than the as-deposited films. In unison, film surface was modified as a result of the formation of aggregates caused by the atomic mixing of native matrix atoms (Mg and O) and precipitated hydrogen.     

Structural and optical properties of 6H-SiC helium-implanted at 600 K

Single crystals of 6H-SiC were implanted at 600 K with 100 keV He ions to three successively fluences and subsequently annealed at different temperatures ranging from 873 to 1473 K in vacuum. The recovery of lattice damage was investigated by different techniques including Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy and Fourier transform infrared spectroscopy. All three techniques showed that the damage induced by helium ion implantation in the lattice is closely related to the fluence. Rutherford backscattering spectrometry/channeling data on high temperature implantations suggest that for a fluence of 3 × 10¹⁶ He⁺/cm², extended defects are created by thermal annealing to 1473 K. Apart from a well-known intensity decrease of scattering peaks in Raman spectroscopy it was found that the absorbance peak in Fourier transform infrared spectroscopy due to the stretching vibration of Si-C bond shifted to smaller wave numbers with increasing fluence, shifting back to larger wave numbers with increasing annealing temperature. These phenomena are attributed to different lattice damage behavior induced by the hot implantation process, in which simultaneous recovery was prevailing.     

Modification of poly(ether ether ketone) by ion irradiation

Poly(ether ether ketone) was irradiated with 3.0 MeV Si²⁺, 3.25 MeV Cu²⁺ and 4.8 MeV Ag²⁺ ions to the fluences from 10¹² to 10¹⁴ cm⁻² and the effects of irradiation were studied using ERDA, RBS and FTIR methods. The irradiation leads to release of hydrogen from the PEEK surface layer modified by the ion beam. The release is mild for low ion fluences but it becomes more pronounced at the ion fluences above 10¹³ cm⁻². At highest ion fluences the hydrogen concentration falls to 20-35% of its initial value. In contrast to hydrogen no significant oxygen release was observed. The kinetic of the hydrogen release is similar for the three ion species. FTIR measurement shows deep structural changes of the polymer structure resulting from the ion irradiation.     

Effect of SHI on dielectric and magnetic properties of metal oxide/PMMA nanocomposites

Magnetic nanoparticles embedded in polymer matrices have excellent potential for electromagnetic device applications like electromagnetic interference suppression, etc. The NiO nanoparticles were synthesized by simple method. These nanoparticles were dispersed in PMMA matrix and films were prepared by casting method with varying concentrations of nickel oxide nanoparticles. These films were irradiated with 50 MeV Li⁺³ ions at a fluence of 5 × 10¹² ions/cm². AC electrical properties of pristine and irradiated samples were studied in wide frequency range. Dependence of dielectric properties on frequency, ion beam fluence and filler concentration was studied. The results reveal the enhancement in dielectric properties after doping nanoparticles and also upon irradiation, which is also corroborated with field-cooled-zero-field-cooled (FC-ZFC) susceptibility measurement in which magnetization is increased upon irradiation. The Fourier transform infrared (FTIR) spectroscopy analysis revealed the change in the intensity of functional groups after irradiation. Average surface roughness observed to change with filler concentration and also with the irradiation fluence as obtained from AFM analysis.     

Structural modification in amorphous silica after exposure to low fluence 355 nm laser irradiation

UV laser irradiation induced structural modification in amorphous silica was characterized using Fourier transform infrared and X-ray induced photoelectron spectroscopy. Laser irradiation experiment was conducted using a 3ω, 355 nm beam from a pulsed Nd-YAG laser with pulse length of 6.8 ns and laser repetition rate of 1 Hz at ambient conditions. The examined laser fluence was controlled at a relatively low level, ranging from 0 to 4 J/cm². The IR spectra revealed that the vibration frequency of the rocking mode of SiOSi covalent bond shifted to lower wave number, while the bending mode and asymmetric stretching mode of SiOSi covalent bond shifted to higher frequency. This result suggested that the length of SiOSi covalent bond was decreased, the bond angle was increased and the irradiation modified material was densified after irradiation. The high resolution XPS spectra of Si 2p and O 1s illustrated the chemical shift of silicon and oxygen ions after irradiation. The XPS chemical shift of the Si 2p peak about 1.1 eV revealed the existence of low valence silicon ions Si³⁺ species in silica glass after irradiation. The chemical shift of the O 1s peak about 0.9 eV illustrated the emergence of non-bridging oxygen ions during laser irradiation. The deconvoluted peak area and FWHM value of low valence silicon ions and non-bridging oxygen ions all exhibited exponentially growth as the linearly elevation of laser fluence. UV laser-induced photolysis of SiO covalent bond was suggested to be responsible for the formation and increase of low valence silicon ions and non-bridging oxygen ions. These FT-IR and XPS data revealed that short range structural modifications were important structure alterations in silica glass before the emergence of distinct and large size damage crater.     

Stoichiometry evolution of polyethylene terephtalate under 3.7 MeV He irradiation

A 3.7 MeV He⁺ ion beam was simultaneously used for Polyethylene Terephtalate (PET) film degradation and characterization. To enhance the potentialities of the characterization method, a multi-detector Ion Beam Analysis (IBA) technique was used. The stoichiometry change of the PET target following the irradiation is quantified at a beam fluence varying between 7 × 10¹³ and 1.8 × 10¹⁶ He⁺ cm⁻². The damage induced in PET films by He⁺ bombarding was analyzed in-situ simultaneously through Rutherford Backscattering Spectrometry (RBS), Particle Elastic scattering Spectrometry (PES) and Hydrogen Elastic Recoil Detection (ERD).Appropriate experimental conditions for the observation of absolute changes in composition and thickness during irradiation were determined. The oxygen and carbon content evolution as a function of the ion fluence was monitored by He⁺ backscattering whereas the hydrogen content was measured by H(α, H)α collisions in which both the scattered He⁺ ions and the recoiling H could be observed. The present study reveals that, at the highest fluence 1.8 × 10¹⁶ He⁺ cm⁻², the PET films have lost approximately 15% of the carbon, more than 45% of the hydrogen and 85% of the oxygen of the amount contained in the pristine sample. The energy shift of recoiling H⁺ ions at a forward angle 45° was followed in order to study the mass loss effect.The experimental results are consistent with the bulk molecular recombination model. Based on the results, hydrogen, oxygen and carbon release cross sections are determined. For hydrogen, comparison with deuteron irradiation indicates a cross section linear dependence on the stopping power.