The influence of projectile charge state on ionization probabilities of sputtered atoms

The ionization probability of atoms sputtered from a clean polycrystalline metal surface was measured for different charge states of the projectile used to bombard the sample. More specifically, a polycrystalline indium surface was irradiated with Ar⁺ and Ar⁰ beams of energies between 5 and 15 keV, and In⁺ secondary ions and neutral In atoms emitted from the surface were detected under identical experimental conditions regarding the sampled emission angle and energy. The resulting energy integrated ionization probability of sputtered In atoms is consistently found to be smaller for neutral projectiles, the difference decreasing with decreasing impact energy. The observed trends agree with those measured for kinetic electron emission, indicating that secondary ion formation is at least partly governed by kinetic substrate excitation.     

Collision cascade temperature

Interaction of a projectile with a solid has been considered in detail. It has been found that any collision cascade generated by a projectile can be characterized by the average kinetic energy of cascade atoms that represents an “instantaneous temperature” of the cascade during its very short lifetime (10⁻¹² s). We refer to this value as the “dynamic temperature” in order to emphasize the fact that cascade atoms are in a dynamic equilibrium and have a definite energy distribution. The dynamic temperature defines the electron distribution in the cascade area and, hence, the ionization probability of sputtered atoms. The energy distribution of cascade atoms and, as a consequence, the dynamic temperature can be found experimentally by measuring the energy distribution of sputtered atoms. The calculated dynamic temperature has been found to be in good agreement with the experimental data on ion formation in the case of cesium and oxygen ion sputtering of silicon. Based on the developed model we suggest an experimental technique for a radical improvement of the existing cascade sputtering models.     

Charge transfer and excitation in high-energy ion-atom collisions

Coincidence measurements of charge transfer and simultaneous projectile electron excitation provide insight into correlated two-electron processes in energetic ion-atom collisions. Projectile excitation and electron capture can occur simultaneously in a collision of a highly charged ion with a target atom; this process is called resonant transfer and excitation (RTE). The intermediate excited state which is thus formed can subsequently decay by photon emission or by Auger-electron emission. Results are shown for RTE in both the K-shell of Ca ions and the L-shell of Nb ions, for simultaneous projectile electron loss and excitation, and for the effect of RTE on electron capture.     

Electron excitation cross sections of atomic hydrogen by fully stripped projectile ions

Electron excitation of atomic hydrogen by fully stripped projectile ions (q = 1-8) is theoretically studied by using the boundary corrected continuum intermediate state approximation in the energy range of 20-1000 keV/amu. In this formalism, we have taken a distortion effect produced by the projectile charge. The present computed results for the excited states (n = 2, 3, 4) of hydrogen atom with proton impact is only compared with experiments and other theoretical results. In addition, other results for different charge states (q = 1-8) are displayed in tabular form to get a detail view of contribution from different sub-shells. We have also studied the behavior of saturation of the cross sections which should tend to a constant value as the projectile charge increase.     

Separation of potential and kinetic electron emission from Si and W induced by multiply charged neon and argon ions

The total secondary electron emission yields, γ_T, induced by impact of the fast ions Ne^q+ (q = 2-8) and Ar^q+ (q = 3-12) on Si and Ne^q+ (q = 2-8) on W targets have been measured. It was observed that for a given impact energy, γ_T increases with the charge of projectile ion. By plotting γ_T as a function of the total potential energy of the respective ion, true kinetic and potential electron yields have been obtained. Potential electron yield was proportional to the total potential energy of the projectile ion. However, decrease in potential electron yield with increasing kinetic energy of Ne^q+ impact on Si and W was observed. This decrease in potential electron yield with kinetic energy of the ion was more pronounced for the projectile ions having higher charge states. Moreover, kinetic electron yield to energy-loss ratio for various ion-target combinations was calculated and results were in good agreement with semi-empirical model for kinetic electron emission.     

Time dependent aspects in the ionizations following atomic photoexcitations

The time dependent aspects of the probability amplitudes in atomic excitations and their subsequent decay processes are discussed. The spin-orbit precession in an atomic ion core gives us a good clock to measure the characteristics of the autoionizing states. The lowest 3s sub-valence shell excitation of potassium atoms is attributed to an optically forbidden quartet state resonance, which are realized by the spin-orbit migration of the residual ion cores in the course of indirect photoionization processes. There is a class of multiple-electron ionization processes which provide us with the post-collision interaction effects. An electron that slowly leaves the ion behaves as a clock in the atomic system. The role of these atomic clocks are studied by tracing the time dependent state vector of the total system with the aid of accurate relativistic calculations of atomic structures and ionization dynamics. The post-collision interaction effects in an artificial many step Auger cascade and in a multi-step Auger cascade following the argon 1s vacancy creation by photon impact are studied extensively.     

One and two electron transitions in energetic ion and helium collisions

The single ionization (SI) and double ionization (DI), single and double ionization accompanying one electron loss (SS) of the projectile and the single and double electron capture of the projectile from target atom are investigated for 2.0–8.0 MeV Na^q+–He and C1^q+–He collisions. The cross-section ratio of the double ionization (DI) to that of the SI, the ratio of SS+DI to SS+SI, and ratio of double capture (DC) cross-section to that of single capture (SC), are measured by means of time-of-flight technique. The velocity and charge state dependences of the measured cross-section ratios are studied and discussed. The obtained capture cross-section ratios are compared with the theoretical calculations using the classical over-barrier model.     

Pure ionization cross section of helium and ionization mechanism

Pure target ionization was investigated for 0.4-6.4 MeV C^q+(q = 1-4) + He and O^q+(q = 1-4) + He collisions. The double-to-single target ionization ratios R₂₁ were measured using coincidence techniques. We compare our results with existing experimental results and find they are in good agreement. The ratio R₂₁ is nearly independent of projectile charge state. The relation of R₂₁ ∼ V is analyzed using the over barrier model (OBM) and ionization probability, which is described in our extended over barrier model. Our calculation agrees well with the experimental results.     

Recent Developments in Accelerator Based Atomic Physics

Much progress toward a detailed understanding of atomic collision phenomena and atomic structure has recently been made with the aid of accelerated ion beams. Beam foil Lamb shift measurements and the possible observation of spontaneously created positrons from quasi-superheavy atoms give promise for critical tests of QED. The mechanisms of innershell ionization and charge transfer in ion atom collisions have been intensively investigated and the results have brought together the various approaches - Coulomb excitation and MO treatments for these processes. That violent collisions at high energies can cause multiple ionization of the target atom has been known for some time. However, only recently have theoretical treatments been able to predict, e.g., the degree of L shell ionization accompanying K shell ionization. The highly charged ions formed in these collisions have themselves come under intensive investigation and are used for the study of the structure and collision physics of multiply charged species. Electron-Ion collision studies have also been started and initial results on dielectronic recombination are reported.     

Search for short-time phase effects in the electronic damage evolution - A case study with silicon

This work focusses on the production and decay properties of inner-shell vacancies and valence-band excitations induced by swift highly charged ions interacting with amorphous and crystalline Si. High resolution electron spectra have been taken for fast heavy ions at 1.78-5 MeV/u as well as for electrons of similar velocity incident on atomically clean Si targets of well defined phase. Various Auger-electron structures are analyzed concerning their width, their intensity and exact peak position. All measured peaks show a small shift towards lower energy when the charge of the projectile is increased. This finding is an indication for a nuclear-track potential inside the ion track. A detailed analysis of the Auger-electron spectra for amorphous Si and crystalline Si(1 1 1) 7 × 7 points to a small but significant phase effect in the short-time dynamics of ion tracks.     

Study of the electron-electron correlation via observing the two-electron cusp

In a recent experiment we found evidence for the existence of the two-electron cusp in atomic collisions, i.e. the enhanced simultaneous emission of two electrons in forward direction with velocities equal to that of the projectile. In the experiment the energies of the two electrons resulting from the mutual target and projectile ionization in 100 keV He⁰ + He collisions were measured. The strong correlation observed between the energies of the electrons was explained by an angular correlation of 180° in the projectile-centered reference system. For the interpretation of the experimental results we carried out a Monte Carlo simulation based on the Wannier theory for the two-electron break-up process at threshold. In the article we review the details of the simulation and present two extensions of the model: One takes into account the post-collisional interaction (PCI) between the outgoing electrons and the ionized target atom, while the other contains a correction for a two-center effect.     

Ionization in symmetric and nearly symmetric low energy ion-surface collisions

Multiply charged ions are emitted following bombardment of Al(1 0 0) and Si(1 1 1) by low energy Si⁺ and P⁺ ions. The ion formation is attributed to inner-shell electron promotion during a hard collision between symmetric or nearly symmetric atomic species, followed by Auger decay outside the surface. The relative yield of triply charged Si ions for Si⁺ → Si(1 1 1) is much smaller than that of triply charged Al ions in direct recoil Si⁺ → Al(1 0 0) experiments. This difference can be explained by assuming that only one 2p hole is produced in a Si atom during the symmetric collision, whereas a double 2p hole is also produced in the Al atom following the nearly symmetric Si-Al collision. Further evidence is provided by the complimentary experiment P⁺ → Si(1 1 1), where Si³⁺ regains its intensity and Si⁴⁺ emerges as a result of a double 2p hole decay with shake-off.     

Molecular dynamics study of kinetic electron emission induced by slow sodium ions incident on gold surfaces

Electron excitation and emission phenomena, due to Na⁺ ion impact on Au (1 0 0) surfaces, are studied at incident projectile energies below the threshold for kinetic electron emission. The trajectories and velocities of the projectile and the target atoms are simulated with molecular dynamics. This information are used to calculate the energy loss by electronic stopping as a series of discrete events, localized in space and time, that are treated as sources of excitation energy. The diffusion of the energy deposited by the projectile into the solid is converted into electron yield as proposed by Duvenbeck and coworkers [14]. The results show similar trends to available experimental data.     

Influence of Cr-ions on the magnetic behaviour of FeCo film

Implantation of Cr-ions in Fe₇₀Co₃₀ thin film have been performed to modify its structural and magnetic properties. From the XRD results, the lattice constant as well as the grain size of the film is increasing with the ion fluence. Cr-ions (1 × 10¹⁷ ions/cm²) reduces the coercivity of the film from 140(3) Oe to 44(3) Oe. Coercivity of the film follows the exponential decay as a function of Cr-ions fluence. 35 keV (projectile range 13.5 nm) and 100 keV Cr-ions (projectile range 34.3 nm) have been used to understand the effects of magnetic Cr-ions and the effects of ballistic collision cascade on the MOKE signal. Similar changes on the coercivity behaviour of the film implanted with these two energies have been observed. It appears that the implantation process creates a solid solution of Cr in FeCo without any other additional treatment in the film. After 5 × 10¹⁶ Cr-ions, film exhibit four fold magnetic anisotropy.     

Molybdenum L-shell X-ray production by 350-600 keV Xe (q = 25-30) ions

Molybdenum L-shell X-rays were produced by Xe^q+ (q = 25-30) bombardment at low energies from 2.65 to 4.55 keV/amu (350-600 keV). We observed a kinetic energy threshold of Mo L-shell ionization down to 2.65-3.03 keV/amu (350-400 keV). The charge state effect of the incident ions was not observed which shows that the ions were neutralized, reaching an equilibrium charge state and losing their initial charge state memory before production of L-shell vacancies resulted in X-ray production. The experimental ionization cross sections were compared with those from Binary Encounter Approximation theory. Taking into account projectile deflection in the target nuclear Coulomb field, the ionization cross section of Mo L-shell near the kinetic energy threshold was well described.     

Ion-induced electrostatic charging of ice

We studied electrostatic charging on amorphous ice films induced by the impact of 100 keV Ar⁺ ions at 45° incidence. We derived the positive surface electrostatic potential from the kinetic energy of sputtered molecular ions. Measurements were performed as a function of film thickness, ion flux and accumulated fluence. The main results are (a) films charge up to a saturation value, following an exponential time dependence. (b) The time constant for charging is approximately proportional to the reciprocal of the ion flux. (c) The maximum surface voltage depends on film thickness and ion flux. (d) Charging does not occur for films thinner than the maximum range of projectile. (e) Dielectric breakdown is observed for surface potentials above ∼100 V. We explain the measurements with a model in which charges can drift into the substrate or be trapped temporarily near the ionization range of the projectiles. A charge can be released from the trap by the electric field produced by a nearby charge injected by subsequent projectiles.     

Resonant mechanisms for negative ionization of secondary emitted atoms from sputtered metals

A model is presented to describe negative ionization of low energy, secondary atomic particles ejected from sputtered metal surfaces. Focus is made on the diatomic systems formed, in the collision cascade generated by the primary ion beam, between secondary emitted atoms and their nearest-neighbor substrate atoms that provide the initial impulse for ejection. Two different resonant ionization mechanisms are investigated such that a conduction electron may tunnel into the affinity orbital of the ejected atom either by direct hopping or after an intermediate transition via the affinity orbital of the substrate atom. A numerical method is outlined to calculate the negative ionization probability of secondary emitted atoms. A good agreement is found with van Der Heide’s measurements of the Cu⁻ population sputtered from a clean Cu-surface, at emission energies below 100 eV.     

A molecular dynamics investigation of kinetic electron emission from silver surfaces under varying angle of projectile impact

We present a computer simulation study on the influence of the impact angle of the projectile on kinetic electron emission yields for 5-keV Ag → Ag bombardment. By means of a hybrid computer simulation model incorporating (i) the particle dynamics following the primary particle impact, (ii) the kinetically induced electronic substrate excitations via electronic friction and electron promotion and (iii) the transport of excitation energy away from the spot of generation, a full three-dimensional electron temperature profile within the volume affected by the atomic collision cascade is calculated. This profile is evaluated at the very surface of the target and taken as input for a thermionic model (‘hot-spot-model’) for kinetic electron emission. Averaging the results for different choices of the polar angle of incidence Θ over a large set of impact points, the obtained kinetic electron emission yields can be compared with experimental data and predictions from simple geometrical calculations. The presented simulation results appear to be reasonable in comparison with experimental data as well as with simple geometrical considerations of kinetic electron emission under oblique incidence.     

Scintillation light produced by low-energy beams of highly-charged ions

Measurements have been performed of scintillation light intensities emitted from various inorganic scintillators irradiated with low-energy beams of highly-charged ions from an electron beam ion source (EBIS) and an electron cyclotron resonance ion source (ECRIS). Beams of xenon ions Xe^q+ with various charge states between q = 2 and q = 18 have been used at energies between 5 and 17.5 keV per charge generated by the ECRIS. The intensity of the beam was typically varied between 1 and 100 nA. Beams of highly charged residual gas ions have been produced by the EBIS at 4.5 keV per charge and with low intensities down to 100 pA. The scintillator materials used are flat screens of P46 YAG and P43 phosphor. In all cases, scintillation light emitted from the screen surface was detected by a CCD camera. The scintillation light intensity has been found to depend linearly on the kinetic ion energy per time deposited into the scintillator, while up to q = 18 no significant contribution from the ions’ potential energy was found. We discuss the results on the background of a possible use as beam diagnostics, e.g. for the new HITRAP facility at GSI, Germany.     

Ionization probability of secondary ions sputtered from Si(1 1 1) and Ge(1 1 1) surfaces

We have measured the energy distributions of the secondary ions sputtered from the Si(1 1 1) and Ge(1 1 1) surfaces and investigated the ionization probabilities of sputtered Si⁺ and Ge⁺ ions for clarifying their ionization mechanisms. The observed ionization probabilities depend on the velocity of Si⁺ and Ge⁺ ions. This velocity dependence can be successfully analyzed by a theoretical expression, which was proposed originally for the metal surfaces. This implies that the ionization mechanism of Si⁺ and Ge⁺ ions is the same as ions sputtered from the metal surface, i.e., the resonant electron transfer in the high velocity regime and the thermal excitation process in the low velocity regime. The difference in the ionization probability between Si⁺ and Ge⁺ ions is well explained by the difference in the band gap energy.