用PECVD法在金属衬底上沉积氮化硅薄膜

采用等离子体增强化学气相沉积（ＰＥＣＶＤ）方法在４０Ｃｒ钢（含Ｃｒ０．８％～１．１％）或铜等金属基片上沉积氨化硅薄膜。沉积温度为２５０℃时，制备的薄膜厚度为０．２～０．４μｍ，电阻率为８×１０￣（１６）Ω·ｃｍ，介质击穿场强达到１×１０￣７Ｖ／ｃｍ。用ＸＰＳ谱研究了薄膜的结构和成分，并分析了沉积时不同的工艺参数对薄膜绝缘耐压性能的影响。     

[Si(Pc)O]n晶体在NaCl单晶衬底上的外延生长

电子衍射实验表明，当单体酞菁硅二醇Ｓｉ（Ｐｃ）（ＯＨ）２在ＮａＣｌ单晶（１００）解理面上气相沉积时，所得聚酞菁硅氧烷（Ｓｉ（Ｐｃ）Ｏ）ｎ薄膜晶体中的分子链轴相对于膜面的取向，随衬底温度的升高而发生有规律的变化，不确定（１５０℃）→平行→平等＋垂直→垂直（≥３５０℃）高分辨电子显微像显示，与其在固态聚合时的情形不同，气相沉只时所得的（Ｓｉ（Ｐｃ）Ｏ）ｎ微晶主要属于四方晶系，只有少量属于带心的正交晶系     

C2H2／H2／SiH4等离子体聚合及其沉积物的结构与性能的研究

利用Ｃ２Ｈ２／Ｈ２／ＳｉＨ４混合单体等离子体聚合沉积在ＨＤＰＥ板表面制备薄膜，发现薄膜与ＨＤＰＥ粘接良好，Ｈ２使薄膜与基体附着性能提高但其沉积速率下降，而引入ＳｉＨ４则使薄膜的耐磨性能有较大的提高。ＩＲ和ＸＰＳ光谱表明：薄膜中含有较多的－ＯＨ，Ｏ－Ｃ，Ｃ－Ｓｉ和Ｓｉ－Ｏ基团，随着ＳｉＨ４／Ｈ２的增加薄膜中的Ｃ／Ｓｉ比可达１．２２２，说明产物的结构介于无机材料和有机物之间。     

异质诱导生长的酞菁铜薄膜晶体管的研究

因酞菁薄膜平面具有多电子共轭大π键结构,本文采用异质诱导的方式对酞菁薄膜的生长特性进行了改善研究。采用高掺杂硅为栅极,氧化硅为绝缘层,生长α-四噻吩或p-六联苯薄膜为异质诱导层,制备了酞菁铜有机薄膜晶体管。利用原子力显微镜研究薄膜生长特性,并对比研究了2种诱导层对薄膜晶体管性能的影响。实验结果表明:α-四噻吩上生长的酞菁铜薄膜,形貌呈片状,而p-六联苯上生长的酞菁铜薄膜,形貌呈针状,均与单层酞菁铜棒状形貌不同。同时,α-四噻吩与p-六联苯薄膜上生长酞菁铜后,两者晶体管电性能都有不同程度的提高,均比单层酞菁铜提高了1~2个数量级,表明α-四噻吩或p-六联苯对酞菁铜薄膜均有诱导效应,可以获得高性能的有机薄膜晶体管。     

气相沉积法制备含酞菁铜聚酰亚胺薄膜的光电性能

在2×10-3Pa真空度下,以酞菁铜、均苯四甲酸酐和二氨基二苯醚为原料,通过控制三源单体的加入摩尔计量、加热时间和沉积速率,在玻璃衬底上合成了含酞菁铜的聚酰胺酸,再经150℃～200℃真空加热亚胺化1 h后得到了成膜性良好的均匀含酞菁铜聚酰亚胺薄膜.红外谱图证实了所合成产物的结构,紫外-可见光吸收分析表明含酞菁铜聚酰亚胺薄膜在可见光区、近红外区具有较强的吸收,热失重分析表明所制备的含酞菁铜聚酰亚胺具有良好的热稳定性能;用简并四波混频方法测得薄膜的三阶非线性极化率为1.984×10-9esu,表现出良好的三阶非线性特性.     

气相沉积法制备含酞菁铜聚酰亚胺薄膜的光电性能研究

在2×10-3Pa真空度下,以酞菁铜(CuPc)、均苯四甲酸酐(PMDA)和二氨基二苯醚(ODA)为原料,通过控制三源单体的加入摩尔计量、加热时间和其沉积速率,在玻璃衬底上合成了含酞菁铜的聚酰胺酸,再经150～200℃真空加热亚胺化1h后得到了成膜性良好的均匀含酞菁铜聚酰亚胺薄膜.红外谱图证实了所合成产物的结构,紫外吸收分析表明含酞菁铜聚酰亚胺薄膜在可见光区、近红外区具有较强的吸收,热失重分析表明所制备的含酞菁铜聚酰亚胺具有良好的热稳定性能;简并四波混频方法测得薄膜的三阶非线性极化率为1.984×10-9esu,表现出良好的三阶非线性特性.     

硅基铁电薄膜的制备和特性研究

本文详细介绍了在硅衬底上用ＳＯＬ－ＧＥＬ方法制备ＰＺＴ铁电薄膜电容的工艺步骤，对铁电薄膜进行了ＸＰＳ分析、表面形貌分析、ＸＲＤ分析，测量了铁电电容的电滞回线及Ｃ－Ｖ曲线，并分析了各种工艺条件对铁电薄膜性能的影响．     

横向固相外延生长及其影响因素的研究

对非超高真空条件下对在有ＳｉＯ２图形的硅单晶衬底上用离子束溅射沉积非晶硅薄膜，经过真空退火形成的横向固相外延生长及其影响因素进行了研究，得出了有利于Ｌ－ＳＰＥ生长的材料参数和工艺处理条件。     

ZnTexSe1—x外延层的室温发光特性

用低压－金属有机化学气相沉积方法在ＧａＡｓ衬底上生长了ＺｎＴｅｘＳｅ１－ｘ单晶薄膜。在Ｎ２分子激光器激发下，首镒在室温，ＺｎＴｅ０．００５Ｓｅ０．９９５单晶层中观测到它的蓝带发光。随Ｘ值增加，ＺｎＴｅｘＳｅ１－ｘ中Ｓ１带消失，发光主要由一个绿     

掺铒硫化锌交流电致发光薄膜的表面结构

对研制的掺铒硫化锌交流电致发光薄膜,进行了表面的 Ｘ 射线衍射（ Ｘ Ｒ Ｄ） 、 Ｘ 射线光电子能谱（ Ｘ Ｐ Ｓ） 及发光亮度测量。研究认为薄膜多晶的沉积有择优取向的趋势,表层碳、氧主要来源于吸附与玷污,绝缘层选择高介电常数、低电阻率的材料,可进一步提高器件质量     

Formation of Bulk Heterojunctions by Alternative Thermal Deposition and Its Structure Analysis for High Efficiency Small Molecular Organic Photovoltaics

We propose a new method to form small‐molecule based bulk heterojunctions (SM‐BHJs) through alternative thermal deposition (ATD), which is a simple modification of conventional thermal evaporation. By ATD, the thicknesses of alternative donor and acceptor layers are precisely controlled down to 0.1 nm, which is critical to form BHJs. The formation of a BHJ in copper(II) phthalocyanine (CuPc) and fullerene (C₆₀) systems is confirmed by atomic force microscopy (AFM), grazing incidence X‐ray small angle scattering (GISAXS), and absorption measurements. From analysis of the data, we find that the CuPc|C₆₀ films fabricated by ATD are composed of nanometer sized disk‐shaped CuPc nano grains and aggregated C₆₀, which explains the phase separation of CuPc and C₆₀. On the other hand, the co‐deposited CuPc:C₆₀ films do not show the existence of separated CuPc nano grains in the CuPc:C₆₀ matrix. The OPV cells fabricated using the ATD method show significantly enhanced power conversion efficiency compared to the co‐deposited OPV cells with the same composition.     

有机半导体薄膜三极管的研制

采用真空蒸镀法和有机半导体材料酞菁铜,制作Au/CuPc/Al/ CuPc/Au三明治结构的肖特基型栅极有机静电感应三极管.该三极管导电沟道垂直于CuPc薄膜,与采用MOSFET结构的有机薄膜三极管相比导电沟道大幅缩短,有利于克服有机半导体电学性能的缺点.实验结果表明,该三极管驱动电压低,呈不饱和电流-电压特性.其工作特性依赖于栅极电压和梳状铝电极的结构.通过合理设计、制作梳状铝电极,获得了良好的三极管静态、动态特性.     

Potential barrier and photovoltage at interfaces of hexadecafluoro-copper-phthalocyanine and copper phthalocyanine films on the surface of tin dioxide

Potential barrier formation during the deposition of ultrathin coatings of copper phthalocyanine (CuPc) and hexadecafluoro-copper-phthalocyanine (F₁₆CuPc) on the surface of polycrystalline tin dioxide and during the deposition of F₁₆CuPc coatings over a CuPc film is studied. A photoinduced change in the surface potential of the prepared structures upon exposure to light in the visible wavelength region is detected. The surface photovoltage of the studied organic films has a positive sign with respect to the substrate, its spectral dependences correspond to the absorption spectra of the organic materials CuPc and F₁₆CuPc. Surface potential measurements are performed using a probe beam of low-energy electrons, based on the total current spectroscopy technique. A total decrease in the work function by 0.2 eV is detected during the deposition of a CuPc film up to 8 nm in thickness on a SnO₂ substrate; in the case of the F₁₆CuPc/SnO₂ interface, an increase in the work function by 0.55 eV is detected. At the initial deposition stage, at organic film thicknesses of up to 1.5 nm, the interfacial potential barrier corresponded to electron density transfer from the organic film to the substrate in both cases of CuPc/SnO₂ and F₁₆CuPc/SnO₂. It is assumed that the photoinduced change in the surface potential is caused by charge-carrier separation in a boundary region up to 1.5 nm thick.     

Electronic properties of the interface between hexadecafluoro copper phthalocyanine and unsubstituted copper phthalocyanine films

The formation of an interface during the deposition of unsubstituted copper phthalocyanine (CuPc) films on the surface of hexadecafluoro copper phthalocyanine (F₁₆-CuPc) films is studied. An incident low-energy electron beam with energies from 0 to 25 eV is used to test the surface under study according to the very-low-energy electron-diffraction technique (VLEED) in the mode of total current spectroscopy. For F₁₆-CuPc films, the structure of the maxima in the total current spectra and its main differences from the structure of the maxima for the CuPc film are determined in the energy range from 5 to 15 eV above the Fermi level. The differences in the structure of vacant electron orbitals for CuPc and F₁₆-CuPc are also revealed using density functional theory calculations. As a result of an analysis of variations in the intensities of the total current spectra of the CuPc and F₁₆-CuPc films, it is assumed that an intermediate layer up to 1 nm thick appears during the formation of an interface between these films, which is characterized by a spread of the features in the total current spectrum. The height, width, and change in the work function are determined for the studied F₁₆-CuPc/ÑuPc interface barrier. A decrease in the level of vacuum by 0.7 eV occurs in the boundary region, which corresponds to electron density transfer from the CuPc film toward the F₁₆-CuPc substrate.     

In situ device processing using shadow mask selective area epitaxy and in situ metallization

A concept for in situ device processing has been demonstrated by the fabrication of Au/CdTe device like structures using shadow mask selective area epitaxy (SAE) and in situ metallization. Patterned CdTe epilayers were grown in the molecular beam epitaxy (MBE) chamber using shadow mask SAE (in situ patterning) and then directly transferred within ultrahigh vacuum (UHV) into a metal evaporation chamber for patterned Au deposition (in situ metallization). Excellent pattern definitions of both the CdTe and Au layers were obtained. Good metal adhesion properties and low levels of contamination at the metal-semiconductor interface were observed. A specially designed mask fixture that allows the mask to be placed and removed within the UHV chamber was implemented to perform this work.     

Optical and Electrical Properties of Polyimide Thin Films Doped-Cu-phthalocyanine Polymerized by Vapor Phase Deposition

Using Cu-phthalocyanine(CuPc),4,4’-diaminodiphenyl ether and pyromellitic dianhydride as monomer materials, polyimide(PI) thin films doped-CuPc have been prepared onto glass substrate by vapor phase co-deposition polymerization under a vacuum of 2×10~(-3)Pa and thermal curing of polyamic acid film in at temperature of 150-200℃ for 60min. In this process, the polymerization can be carried out through controlling the stoichiometric ratio, heating time and deposition rates of the three monomers. IR spectrum identifies the designed chemical structure of the polymer. The absorption of polyimide doped-CuPc is very intense in vis-range and near-infrared by UV-Vis spectrum. And, the PI films doped-CuPc polymerized by vapor phase deposition have uniformity, fine thermal stability and good nonlinear optical properties, and the third-order optical nonlinear susceptibility χ~((3)) with degenerate four-wave mixing can be 1.984×10~(-9)ESU.     

Critical temperature of niobium and tantalum films

A method for depositing thin, superconductive films of Nb and Ta by electron beam evaporation is presented, and the critical temperature of these films is discussed as a function of deposition conditions. Gettering, increasing the ratio of impinging vapor atoms to residual gas atoms, and raising the substrate temperature during deposition gives films with a lower impurity content and higher critical temperature. The resistance ratio of a film and its x-ray lattice parameter are taken as measures of its average impurity concentration. Critical temperatures above 9°K are measured for Nb films of resistance ratio of 3 or higher, and critical temperatures above 4.2°K are measured for Ta films of resistance ratio of 5 or higher.     

Fabrication of thin film transistors by chemical mechanicalpolished polycrystalline silicon films

A top-gate p-channel polycrystalline thin film transistor (TFT) has been fabricated using the polycrystalline silicon (poly-Si) film as-deposited by ultrahigh vacuum chemical vapor deposition (UHV/CVD) and polished by chemical mechanical polishing (CMP). In this process, long-term recrystallization in channel films is not needed. A maximum field effect mobility of 58 cm²/V-s, ON/OFF current ratio of 1.1 10⁷, and threshold voltage of -0.54 V were obtained. The characteristics are not poor. In this work, therefore, we have demonstrated a new method to fabricate poly-Si TFT's     

基于四取代铜酞菁的有机近红外电致磷光器件

制备了结构为ITO/NPB/TPBI:(4-tert)CuPc/BCP/Alq3/Al的近红外(NIR)有机电致发光器件(OLED),器件在室温下的发射峰位于1110nm附近,来源于(4-tert)CuPc分子的磷光发射,器件的最佳掺杂浓度为14wt%。制备了结构为ITO/NPB/TPBI:(4-tert)CuPc/DCJTB/BCP/Alq3/Al的器件,结果表明,DCJTB层的加入没有改变器件的NIR电致发光(EL)峰位置,而器件的NIR发光强度与没有DCJTB层的器件相比,提高了50%左右,这是由于DCJTB向(4-tert)CuPc进行了有效的能量传输。     

激光辅助固态薄膜淀积技术的进展

本文综述了近年来激光辅助固态薄膜淀积技术的进展。简要概述了脉冲激光蒸发淀积(PLED)和激光诱导化学气相淀积(LCVD)的基本原理、淀积系统和激光器。侧重详细介绍了这种技术在制备微电子器件所需要的高Tc超导体膜、金属膜、半导体膜和介质膜中的应用。