SiC薄膜制备工艺进展

本文综述了ＳｉＣ薄膜的制备工艺及进展，介绍了物理气相沉积、化学气相沉积、等离子化学气相沉积及光化学气相沉积等各处ＳｉＣ薄膜的制备方法，简单阐述了各种工艺对薄膜性能的影响，评述了各种制备工艺的优缺点。     

分布子电子回旋共振等离子体制备高质量二氧化硅薄膜

介绍了一种采用ＤＥＣＲ等离子体在低温下制备高质量ＳｉＯ２薄膜的ＰＥＣＶＤ工艺。讨论了ＤＥＣＲＰＥＣＶＤ工艺中气相Ｏ／Ｓｉ原子比以及沉积速率对ＳｉＯ２薄膜性能的影响。采用包括高能离子分析，椭扁仪，化学刻蚀以及红外吸收谱等物理和化学方法，对所镀ＳｉＯ２薄膜的各种理化特性地分析和研究。     

ECR—PECVD制备Si3N4硬质陶瓷薄膜的研究

采用电子回旋共振等离子体化学气相沉积（ＥＣＲ－ＰＥＣＶＤ）技术制备了Ｓｉ３Ｎ４薄膜。利用显微硬度计测定了Ｓｉ３Ｎ４薄膜的表面微硬度。由摩擦测试机对ＳｉＮ４薄膜的摩擦性能进行了测试分析。结果表明，Ｓｉ３Ｎ４薄膜的摩擦系数和单位时间的磨损量较小，该膜具有良好的耐磨性和耐划伤能力。     

平面光波导膜的ECR—PECVD制备及特性研究

采用微波电子回旋共振等离子体增强化学气相沉积技术，在单晶硅衬底上制备了用于平面光波导的ＳｉＯ２薄膜研究了沉积速率与工艺参数之间的，并对身频偏置对成膜特性的影响作了初步实验研究。通过Ｘ射线光电子能谱、傅立叶变换红外光谱、扫描电镜、原子力显微镜、以及扫措隧道显微镜三维形貌和椭偏仪等测量手段，分析了样品的薄膜结构和光学特性等。结果表明，在较低温度下沉积出均匀致密、性能优良的ＳｉＯ２薄膜。此外，还成功制备     

高氢稀释硅烷加乙烯法制备纳米硅碳薄膜

在等离子体化学气相沉积系统（ＰＥＣＶＤ）中，使用高氢稀释硅烷（ＳｉＨ４）加乙烯（Ｃ２Ｈ４）为反应气氛制备了纳米硅碳（ｎｃ－ＳｉＣｘ＾２Ｈ）薄膜，随着（Ｃ２Ｈ４＋ＳｉＨ４）／Ｈ２（Ｘｇ）从５％时，由于Ｈ蚀刻效应的减弱，薄膜的晶态率从４８％下降到８％，平均晶粒尺寸在３．５－１０ｎｍ。当Ｘｇ≥６％时，生成薄膜为非晶硅碳（ａ－ＳｉＣｘ＾２Ｈ）薄膜。ｎｃ－ＳｉＣｘ＾２Ｈ薄膜的电学性质具有与薄膜的晶态率紧密相     

用CVI工艺制备碳纤维增强C－SiC梯度热结构材料

用化学气相渗（ＣＶＩ）工艺，分别用分段沉积和共沉积方法制取了Ｃ／Ｃ－ＳｉＣ梯度热结构材料，并比较了二者的成分梯度、性能与组织结构特征。     

等离子增强化学气相淀积硅化钛薄膜的特性

本文以四氯化钛（ＴｉＣｌ４）和硅烷（ＳｉＨ４）为源物质，采用等离子增强化学气相淀积（ＰＥＣＶＤ）工艺结合常规热退火制备了优良的ＴｉＳｉ２薄膜。研究了淀积和退火条件对薄膜性质的影响。用四探针检测了退火前后薄膜的薄层电阻，用俄歇电子能谱（ＡＥＳ）和Ｘ射线衍射分析了薄膜的化学组成和晶体结构。     

乙烯对CVD法制备硅薄膜性能的影响

以硅烷和乙烯的混合气体的原料气,通过常压化学气相沉积方法在玻璃衬底上生长出了硅薄膜。结合光电子能谱、高分辨电镜以及薄膜抗腐蚀性研究,证实乙烯的引入使硅薄膜中形成一定数量的ＳｉＣ微晶粒。ＳｉＣ较高的化学稳定性使薄膜具有较强的耐碱性,而其较小的折射率使薄膜的镜面反射率较高低。含有ＳｉＣ的硅薄膜经碱液适当腐蚀后能降低镜面反射,进而有可能减少光污染现象。     

海外文献速递

薄膜２００００２０１微波等离子体增强化学气相沉积金刚石膜微观结构──Ｃｈｅｎ Ｙ Ｈ． Ｏｉａｍｏｎｄ ａｎｄ Ｒｅｌａｔｅｄ Ｍａｔｅｒｉａｌｓ, １９９８, ７（９）：１２７２（英文） 用富Ｓｉ氨化物作预聚物和用负偏压微波等离子体增强化学气相沉积方法,在Ｓｉ基体上选择性部位沉积（ＳＡＤ）金刚石膜。结果表明,Ｃｈ４／Ｈ２混合气体压力过低（７． ９８～９． ９８） × １０~３ Ｐａ,Ｓｉ基体上金刚石膜形核受到抑制,ＳｉＮ基体上形核不受影响,采用以上工艺可获得高ＳＡＤ金刚石膜。最佳沉积工艺参数：气体总压力７．…     

功能薄膜材料多晶硅的制备及光电特性研究

用等离子体化学气相沉积（ＰＣＶＤ）制备掺杂和本片的ａ－Ｓｉ：Ｈ薄膜,用固相晶化法制备多晶硅薄膜。通过Ｘ射线衍射分析多晶硅的晶粒大小与ａ－Ｓｉ：Ｈ的沉积条件及退火条件的关系,测量了子多晶硅薄膜的室温暗电导率和光能隙,讨论了影响暗导导率和光能隙的因素。     

SiCOI structure fabricated by catalytic chemical vapor deposition

Epitaxial growth of SiC on SOI substrates using a hot-mesh chemical vapor deposition (CVD) technique was investigated. This technique utilizes a catalytic reaction involving hot tungsten wires arranged in a mesh structure. Using this hot-mesh CVD method, SiC epitaxial growth on SOI substrates with a thin top Si layer was realized without formation of voids, which form readily in the thin Si top layer at temperatures above 800 °C. The SiC film grown on an SOI structure exhibited a large gage factor (GF) of − 27, which is approximately the same as that (GF = − 31.8) of a SiC epitaxial film on Si(100) grown at 1360 °C using atmospheric pressure CVD.     

Characterization of ZrO2 and SiC ceramic thin films prepared by electrostatic atomization

ZrO₂ and SiC ceramic thin films and their bilayer have been successfully prepared by a newly developed electrostatic atomization technique. This technique can generate fine spray of ceramic suspensions in a micrometer sized range with a narrow size distribution which is crucial for preparation of uniform thin films of these ceramic materials. Compared to some other thin film deposition techniques, such as Chemical vapour deposition (CVD), physical vapour deposition (PVD) and plasma spray (PS) etc. the thin film deposition process using electrostatic atomization is not only cheap but also controllable. The prepared ZrO₂ and SiC thin films were investigated using scanning electron microscopy (SEM) and energy dispersion analysis (EDA) techniques. These thin films were observed to be homogenous with a particle size less than 10 m. The ZrO₂-SiC bilayer was found to have an abrupt interface, implying that the deposition process is controllable and also that functionally graded ceramic/ceramic materials can be prepared in this way if the thickness of each layer is accurately controlled.     

常温下采用射频等离子体法合成碳化硅膜

采用射频等离子体增强的气相沉积法，以硅烷和乙烯为原料，在常温下成功的合成了碳化硅薄膜。对于该条件下合成的碳化硅薄膜的结构特征，采用SEM、TEM、XRD、IR等手段进行了分析；分析结果表明我们的样品是以碳硅键为主的薄膜。     

碳化硅薄膜制备方法及光学性能的研究进展

碳化硅薄膜有密度小、热导率高、热膨胀系数低、硬度高等优异的性能。介绍了制备碳化硅薄膜的2种常用方法。即化学气相沉积和磁控溅射技术,比较了2种方法的各自优势。总结了碳化硅薄膜光学性能及短波发光特性的研究进展。     

SiC发光特性及其调控研究进展

碳化硅(SiC)作为第三代半导体的代表材料,具有禁带宽度大、热导率高和临界击穿电场高等特点,所制备的光电器件在高温、强辐射等极端、恶劣条件下有巨大的应用潜力。本文综述了国内外SiC发光性质的研究现状,介绍SiC发光的实际应用,阐述了单晶、纳米晶和薄膜不同形态SiC的制备方法及发光特点,并对SiC发光调控的研究进展进行了探讨与展望。利用新兴技术手段,可实现对SiC发光光谱和发光效率等性质的调控。     

Synthesis of silicon carbide nanowires by solid phase source chemical vapor deposition

In this paper, we report a simple approach to synthesize silicon carbide (SiC) nanowires by solid phase source chemical vapor deposition (CVD) at relatively low temperatures. 3C-SiC nanowires covered by an amorphous shell were obtained on a thin film which was first deposited on silicon substrates, and the nanowires are 20–80 nm in diameter and several μm in length, with a growth direction of [200]. The growth of the nanowires agrees well on vapor-liquid-solid (VLS) process and the film deposited on the substrates plays an important role in the formation of nanowires.     

Photocatalytic TiO(2) deposition by chemical vapor deposition

Dip-coating, spray-coating or spin-coating methods for crystalline thin film deposition require post-annealing process at high temperature. Since chemical vapor deposition (CVD) process is capable of depositing high-quality thin films without post-annealing process for crystallization, CVD method was employed for the deposition of TiO(2) films on window glass substrates. Post-annealing at high temperature required for other deposition methods causes sodium ion diffusion into TiO(2) film from window glass, resulting in the degradation of photocatalytic efficiency. Anatase-structured TiO(2) thin films were deposited on window glass by CVD, and the photocatalytic dissociation rates of benzene with CVD-grown TiO(2) under UV exposure were characterized. As the TiO(2) film deposition temperature was increased, the (112)-preferred orientations were observed in the film. The (112)-preferred orientation of TiO(2) thin film resulted in a columnar structure with a larger surface area for benzene dissociation. Obviously, benzene dissociation rate was maximum when the degree of the (112) preferential orientation was maximum. It is clear that the thin film TiO(2) should be controlled to exhibit the preferred orientation for the optimum photocatalytic reaction rate. CVD method is an alternative for the deposition of photocatalytic TiO(2).     

定向介孔薄膜制备的研究进展

定向介孔薄膜是指内部孔道沿着同一方向定向排列的介孔薄膜. 本文就定向介孔薄膜的制备方法特别是近几年内的进展进行了回顾和评述, 按形成介孔薄膜的机理总结出三类制备介孔薄膜的方法, 并且分析了薄膜制备过程中的影响因素, 从薄膜定向性的角度对制备介孔薄膜的研究进行了分析与展望, 提出了今后制备定向介孔薄膜的发展方向和研究热点.     

CVD法SiC（C芯）纤维的发展概况

概述了CVD法SiC(C 芯)纤维的制备、性能、显微结构和应用。