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1.
A liquid-crystal display (LCD) using polarizers as the panel substrates is investigated. The optical properties of TN LCD's using biaxially drawn polyester films and uniaxially drawn polyester films are evaluated. As a result, the latter films are selected as supporting films of the polarizers. Since both uniaxially drawn polyester films and LC molecules are optically anisotropic, interference colors may result due to birefringence. Also, as these polyester films are thermally anisotropic, warping of the LCD panel may occur after heat treatment. The influence of the arrangement of the polarizers on the optical and thermal properties of the LCD is discussed and the most suitable structure is determined. The developed plastic LCD is 0.5 mm in thickness and has better optical characteristics than those of a conventional LCD using glass substrates.  相似文献   

2.
In 1996 , Schoenbach created the termof micro-hol-lowcathode discharge for the first ti me on the basis ofhollowcathode discharge[1].Fig.1 shows the electrodegeometries and electric circuit for a micro-hollowcath-ode discharge. The electrode geometry consists of acathode or anode, whichis composed of metal sheets of100μmthickness , separated by an insulator sheets ofseveral hundreds of micron. Two closely spaced elec-trodes with cylindrical openings of several hundreds ofmicronin diameter wit…  相似文献   

3.
An integrated 14 000 picture element 36-in2flat screen display panel has been constructed by a combination of thin-film transistor and nematic liquid-crystal technology. The design, fabrication, and present performance of the panel is discussed. The design of the peripheral circuits, which permit the presentation of low resolution off-the-air TV pictures on the panel is described in another paper.  相似文献   

4.
A thin-film-transistor-controlled liquid-crystal numeric display using vacuum-deposited CdSe TFT's is described. This display incorporates substantial on-substrate signal processing (level shifters, 4-bit latch, BCD-to-seven segment decoder) in addition to the display segment drivers. This is an MSI-level 150 TFT digital circuit which illustrates the level of display system integration that can be achieved using thin-film integrated-circuit technology.  相似文献   

5.
We present a complex liquid-crystal matrix display used as a TV screen. Its complexity is 128 × 128 and the multiplexing technique permits the display of 8 gray levels. The image change time is greater than 5 images/s.  相似文献   

6.
Using an electron transport mechanism, a self-shift display has been successfully implemented on an ac plasma panel providing higher resolution, higher shifting speed, and wider operating margins than previously obtained. The mechanism consists of a unidirectional and efficient transport of a large portion of electrons (generated during the display site discharge) to a neighboring OFF transfer site by a low transverse voltage. The process results in a large wall voltage build-up at the transfer site to switch its state from OFF to ON. The implemented electron transport self-shift display consists of a 7 × 128 site array of an Owens-Illinois 60 lines per inch panel where the 128 columns are driven by a four-phase driver. A resolution of one display site for every two electrodes and a shifting speed better than 600 characters per second have been successfully demonstrated. The ranges of the shifting voltages VDand VTare better than 15 V over a 10-V sustain range. The shifting operation also was successfully demonstrated on an 83 lines per inch panel with good operating margins.  相似文献   

7.
Kim  S.K. Son  Y.-S. Cho  G.H. 《Electronics letters》2006,42(4):214-216
A new high-slew-rate CMOS buffer amplifier consuming a very small quiescent current is proposed. This buffer amplifier recursively copies the output driving current and increases the tail current of the input differential pair during slewing. Since the proposed buffer has a possible slew rate higher than 10 V//spl mu/s for a load capacitance of 1 nF almost independently of static currents as low as 1 /spl mu/A, this buffer amplifier is promising for column driver ICs of flat panel displays that require low static power consumption, high current driving capabilities, and small silicon areas.  相似文献   

8.
9.
The construction and addressing of an experimental 30×30 actively addressed guest-host (G-H) liquid-crystal display (LCD) driven by polysilicon-based thin-film transistors (TFTs) is described. The design features are similar to those of high-quality, nonactive matrix addressed G-H displays used in avionics. The driving voltage is 23 V, resulting in a peak load of 46 V across the TFTs during polarity reversals. The triple-gated TFTs exhibited subnanoampere leakage currents at 40 V and mobilities, corrected for dopant diffusion under the gate, of 72 cm2/V-s for electrons and 40 cm2/V-s for holes. Because no polarizers are used, the display has a 180° viewing angle and is highly readable in reflective-, transmissive-, and mixed-mode operations  相似文献   

10.
A liquid-crystal display device using the depolarization phenomenon is described. The device is the same as the usual twisted nematic liquid-crystal cell (TN cell) except that a nematic liquid crystal with negative dielectric anisotropy is used. It gives high contrast and a wide viewing angle.  相似文献   

11.
A numerical display cell (nine digits of seven segments) with nematic liquid crystals can be driven in a dynamic or a static mode. The static mode combines a flicker-free display with optimum contrast, but it has the drawback of a large number of interconnections (63). This paper describes a method to reduce this number to only four: a 63-b buffer memory in the form of an I2L shift register is attached directly to the glass plate carrying the electrode pattern. The required transparent electrode patterns provided with metallized contacts are prepared by means of thin-film techniques.  相似文献   

12.
This letter reports an autostereoscopic three-dimensional (3D) fiat panel display system employing a newly designed LCD-pixel-associated parallax barrier (LPB). The battler's parameters can be conveniently determined by the LCD pixels and can help to greatly simplify the conventional design. The optical system of the proposed 3D display is built and simulated to verify the design. For further experimental demonstration, a 508-mm autostereoscopic 3D displayprototype is developed and it presents good stereoscopic images. Experimental results agree well wlth the simulation, which reveals a strong potential for 3D display applications.  相似文献   

13.
A numeric liquid-crystal display using the dynamic scattering mode has been developed for calculators by adopting a total system design through the integrated development of material, device, and system. A mixed Schiff-base nematic liquid crystal with the dopants of l-hexadecylpyridinum bromide and p-aminophenol has been developed for the 1:2 selection multiplexing drive over a wide temperature range (0-40°C). A reliable package has been achieved with new technology. A 1-chip CMOS driving circuit with a 42-lead package has been developed for 8-digit 7-segment numeric readout displays in order to eliminate the dc component of the applied voltage, to minimize variations in the drive voltage, and to reduce power consumption. The devices have passed severe reliability tests. Our displays have lasted 15 000 h under normal test conditions. Using the dichroic mirror approach, it has become possible to design color displays of yellow, green, blue, or any color which have high readability and wide viewing angle under severe ambient light conditions.  相似文献   

14.
A full-color matrix liquid-crystal display panel with color stripe layers of red, green, and blue on theY-electrodes is proposed. The color stripe layers of 300-µm pitch are made by photolithography. The color purities of greenish, bluish, and purplish colors obtained by the liquid-crystal display panel are as good as those of typical printed inks, while those of yellowish and reddish colors are poor at present. In addition, effects of the color layers on the display properties are discussed.  相似文献   

15.
We have demonstrated on-chip learning in an array of floating-gate MOS synapse transistors. The array comprises one synapse transistor at each node, and normalization circuitry at the row boundaries. The array computes the inner product of a column input vector and a stored weight matrix. The weights are stored as floating-gate charge; they are nonvolatile, but can increase when we apply a row-learn signal. The input and learn signals are digital pulses; column input pulses that are coincident with row-learn pulses cause weight increases at selected synapses. The normalization circuitry forces row synapses to compete for floating-gate charge, bounding the weight values. The array simultaneously exhibits fast computation and slow adaptation: The inner product computes in 10 μs, whereas the weight normalization takes minutes to hours  相似文献   

16.
A flat-panel display control IC with 150-V drivers is realized in high-voltage analog/digital IC technology utilizing a low-cost p-n junction isolation process. An improved semiwell isolation structure that has an epitaxial layer of two different thicknesses is used. In order to achieve high-voltage push-pull operation, totem-pole-type output circuits are formed in the structure's thick, high-resistivity epitaxial area. A compact complementary transistor logic circuit is successfully integrated in the n-wells of the structure's thin epitaxial area to meet the high-speed requirement for control logic. A stacked circuit is used to reduce the standby power needs of the logic circuits.  相似文献   

17.
A method of electrical switching between the bistable states of a recently reported display is described [p. 1007, [5]]. The topologically-equivalent bistable states have boundary-inversion (BI) layers adjacent to one or the other of the cell surfaces. The display allows low-voltage operation, is capable of good contrast, and is relatively insensitive to changes in material parameters, boundary conditions, and temperature. In the described method of switching, the state is selected by the height of an ac switching voltage in a suitably fabricated asymmetrical cell. A low switching voltage, by a process that is uniform over the pel area, quickly produces the state with the BI layer at the surface favored by the cell's asymmetry. A somewhat higher voltage produces the other state by a domain wall slowly shrinking from the pel perimeter. The write time (uniform process) can be as short as 50 ms, but the erase time (domain wall motion) is more than a second.  相似文献   

18.
嵌入式阵列模块在屏幕显示中的应用   总被引:2,自引:0,他引:2  
介绍了利用可编程逻辑器件中嵌入式阵列模块在平板显示器上显示字符的方法,以及在显示过程中屏幕字符属性的设置与控制。  相似文献   

19.
A thermally addressed smectic liquid-crystal flat display is described, which is addressed by a laser-diode light pen as well as by the usual heating electrodes. Information can be written manually on the display panel using a laser diode or information generated by external equipment can be displayed by resistive heating in a line-at-a-time sequence. The manually written information can also be read out electrically by detecting the capacitance of each pixel. To detect the pixel's capacitances arranged in X-Y matrix form, we describe a scheme to prevent crosstalk and to avoid the influence of the electrodes' resistance. By using these techniques, we constructed an experimental display, It has a 30 × 40 mm2display area and a resolution of 4 lines/mm.  相似文献   

20.
A newly designed dc plasma display panel (PDP) using a microbridge structure and hollow cathode has been proposed, and its characteristics have been measured. This new plasma display panel operates in an abnormal glow in the current range from 0-50 μA at 500 torr, with an effective internal resistance of 800 KΩ. This means that the internal resistance is high enough that a resistor-in-cell structure is not necessary any more for the dc PDP. The luminous efficiency of the hollow cathode discharge is at least five times as great as that of subnormal and normal glow discharges. The lifetime of the display panel is shown to be quite insensitive to gas pressure in the range of 400-1100 torr because the sputtered materials are trapped inside the hollow cathode  相似文献   

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