Effect of La2O3-Dopant on Microstructure and Microwave Dielectric Properties of CaO-MgO-Nb2O5-TiO2 System Ceramics

With the development of microwave integratedsystem for wireless communication, requirements ofthe microwave device are combined with high dielec tric constants (εr), low dielectric losses (Q = 1/tanδ) and near zero temperature coefficient for stabili ty and frequency selectivity[1,2]. But it is hard to findmaterials that satisfy all above mentioned requiredcharacteristics. In general, a ceramic with a high di electric constant has a larger positive temperature coef fi…     

MnO_2掺杂BaTi_4O_9陶瓷微波介电性能研究

采用传统固相反应法合成BaTi_4O_9粉体,复合掺杂质量分数为0~0.16%MnO_2,在空气气氛下常压烧结制备BaTi_4O_9陶瓷。研究了MnO_2对BaTi_4O_9陶瓷的相组成、微观形貌、烧结特性及介电性能的影响。X射线衍射分析和扫描电子显微镜观察表明,Mn完全固溶到BaTi_4O_9陶瓷中;随着MnO_2掺杂量的增加,晶粒更加均匀,BaTi_4O_9陶瓷更加致密,介电常数略微降低,品质因数和谐振频率温度系数先显著提高继而降低;MnO_2掺杂BaTi_4O_9陶瓷发生Ti位取代,高温烧结时在一定程度上抑制了Ti~(4+)还原为Ti~(3+),从而改善BaTi_4O_9陶瓷微波介电性能。在烧结温度1250℃,保温时间4 h,掺杂MnO_2质量分数为0.08%时,BaTi_4O_9陶瓷微波介电性能最优,介电常数(εr)为34.56,品质因数(Q·f,中心频率5 GHz)为49097,谐振频率温度系数(τ_f)为14.997×10~(-6)/℃,相对密度最大,达97%。     

掺杂不同质量分数Y_2O_3、MgO对Al_2O_3陶瓷显微结构及介电性能的影响

利用放电等离子烧结技术制备了不同质量分数Y_2O_3单独掺杂及不同质量分数Y_2O_3、MgO共同掺杂的Al_2O_3陶瓷,研究了烧结助剂掺杂质量分数对Al_2O_3陶瓷显微结构及介电性能的影响。结果表明,孔隙率是影响Al_2O_3陶瓷介电性能的主要因素;单独掺杂质量分数为0.25% Y_2O_3时,Al_2O_3陶瓷得到最优的介电性能,介电常数(ε_r)为9.5±0.2,介质损耗(tanδ)稳定在10~(-3)数量级以内;同时掺杂Y_2O_3和MgO能进一步改善其介电性能,当两者质量分数均为0.25%时,得到最优值,介电常数(ε_r)为10.3±0.2,介质损耗(tanδ)稳定在8×10~(-4)以下。     

Dielectric and piezoelectric properties of （Li, Ce） modified NaBi5Ti5O18 composite ceramics

Nominal (Li0.5Ce0.5)x(Na0.5Bi0.5)(1-x)Na0.5Bi4.5Ti5O18 composite ceramics were fabricated using conventional solid-state reaction method. The coexistence of bismuth layer-structured phase and perovskite phase was determined in these ceramics using XRD technique. At room temperature, the x=0.11 sample showed the largest piezoelectric constant, d33, of about 26.5 pC/N and the largest electromechanical coupling factor, kt, of about 30%. Even after annealing at 500 ℃, the value of d33 was still about 19 pC/N, in x=0.08-0.11 samples. Moreover, these composite ceramics showed low temperature coefficients of dielectric constant and high electrical resistivity in the temperature region of 450-550 ℃. These results indicated that (Li, Ce) modified NaBi5Ti5O18 composite ceramics were promising piezoelectric materials for high-temperature applications.     

Rare earth doped CaCu_3Ti_4O_(12) electronic ceramics for high frequency applications

Ca1-xRxCu3Ti4O12(R=La,Y,Gd;x=0,0.1,0.2,0.3) electronic ceramics were fabricated by conventional solid-state reaction method.The microstructure and dielectric properties as well as impedance behavior were carefully investigated.XRD results showed that the secondary phases with the general formula R2Ti2O7 existed at grain boundaries of rare earth doped ceramics,which inhibited abnormal grain growth.The dielectric constant decreased from 4×105 in pure CaCu3Ti4O12(CCTO) ceramics to 2×103 with rare earth doping.However,all samples showed high dielectric constant in broad frequency range(10 MHz).The cutoff frequency(f0) was remarkably shifted to higher frequency from 13 MHz(pure CCTO ceramics) to 80 MHz(Gd-doped CCTO ceramics).Meanwhile,the dielectric loss tangent rapidly decreased approximately 10 times.These improvements of dielectric properties by rare earth doping are very useful in wide frequency chip capacitor and LTCC devices.     

Influence of Composition on Properties of Medium Temperature Sintering （Ba, Sr）TiO3 Series Capacitor Ceramics

The influence of the composition (Yb2O3, MgO, CeO2, Li2CO3) on the dielectric properties of medium temperature sintering (Ba,Sr)TiO3(BST) series capacitor ceramics was investigated by means of conventional technology process and orthogonal design experiments. The major secondary influencing factors and the influencing tendency of various factor′s levels for the dielectric properties of BST ceramics were obtained. The optimum formula for maximum dielectric constant (ε) and for minimum dielectric loss (tanδ) was obtained under the experimental conditions. The BST ceramics with optimum comprehensive properties was obtained by means of orthogonal design experiments, with the sintering temperature at 1200 ℃, the dielectric constant 5239, the dielectric loss 0.0097, withstand electric voltage over 6 MV·m-1, capacitance temperature changing rate (ΔC/C) -75.67%, and suited for Y5V character. The mechanism of the influence of various components on the dielectric properties of medium temperature sintering BST ceramics was studied, thus providing the basis for preparation of multilayer capacitor ceramics and single-chip capacitor ceramics.     

Effects of Rare-Earth La2O3 Addition on Microstructures and Electrical Properties of SrTiO3 Varistor-Capacitor Dual Functional Ceramics

Generally, metal oxide varistors used for the pro tection of electrical circuits are based on ZnO andTiO2[1,2]. ZnO varistor, which is widely used due toits high non linearity coefficient, is composed of ZnOceramics with minor oxide additive…     

Piezoelectric and related properties of hydrated collagen

Two piezoelectric constants (polarization per unit stress, d=d'-id', and polarization per unit strain, e=e'-ie'), the elastic constant, and dielectric constant are determined for oriented collagen at different hydration levels at 10 Hz from -150 to 50 degrees C. With no hydration (approximately 0% H2O), d' increases slightly with higher temperatures, while e' decreases slightly. Near 11 wt% H2O, both d' and e' increase then decrease around 0 degrees C, and is probably caused by an increase of the dielectric constant and the ionic conductivity in the nonpiezoelectric phase. Hydration greater than 25 wt%, d' and e' decrease above -50 degrees C which is considered to be due to a greater ionic conductivity surrounding the piezoelectric phase.     

Microwave dielectric properties of Ba6-3xLa8+2x(Ti1-zZrz)18O54(x=2/3)ceramics

Zr substitution for Ti was investigated to modify the dielectric properties of Ba6-3xLa8+2xTi18O54(x=2/3) ceramics.A single-phase solid solution with tungstenbronze-like structure was formed in the range of 0     

Influence of CeO2 doping amount on property of BCTZ lead-free piezoelectric ceramics sintered at low temperature

Ba0.85Ca0.15Ti0.9Zr0.1O3(BCTZ) lead-free piezoelectric ceramics co-doped with CeO2(x=0.1 wt.%, 0.2 wt.%, 0.3 wt.%, 0.4 wt.%, 0.5 wt.%) and Li2CO3(0.6 wt.%) were prepared by conventional solid-state reaction method. Influence of CeO2 doping amount on the piezoelectric properties, dielectric properties, phase composition and microstructure of prepared BCTZ lead-free piezoelectric ceramics doped with Li2CO3 were investigated by X-ray diffraction(XRD) and scanning electron microscopy(SEM) and other analytical methods. The results showed that the sintered temperature of BCTZ lead-free piezoelectric ceramics doped with CeO2 decreased greatly when Li2CO3 doping amount was 0.6 wt.%; a pure perovskite structure of BCTZ lead-free piezoelectric ceramics co-doped with Li2CO3 and CeO2 and sintered at 1050 °C could also be obtained. The piezoelectric constant(d33), the relative permittivity(εr) and the planar electromechanical coupling factor(kp) of BCTZ ceramics doped with Li2CO3 increased firstly and then decreased, the dielectric loss(tanδ) decreased firstly and then increased and decreased at last when CeO2 doping amount increased. The influence of CeO2 doping on the properties of BCTZ lead-free piezoelectric ceramics doped with Li2CO3 were caused by "soft effect" and "hard effect" piezoelectric additive and causing lattice distortion. When CeO2 doping amount(x) was 0.2 wt.%, the BCTZ ceramics doped with Li2CO3(0.6 wt.%) and sintered at 1050 °C possessed the best piezoelectric property and dielectric property with d33 of 436 pC/N, kp of 48.3%, εr of 3650, tanδ of 1.5%.     

Dielectric Properties of Dy2O3 -Doped ( Ba, Sr) TiO3 Ceramics

The effects of Dy2O3 doping on the dielectric properties of (Ba, Sr)TiO3 series capacitor ceramics prepared using solid-state reaction method were studied. With the increasing of Dy2O3 additive , the dielectric constant (ε) of materials increases to a maximum when w(Dy2O3 ) is about 0.5% ,while the dielectric loss(tanδ) decreases. The BST ceramics with highε ( = 5245 ), low tanδ ( = 0. 0026 ) and high DC breakdown voltage ( = 5.5 mV ·m-1 ) were obtained. The influencing mechanism of Dy2O3 on the dielectric properties of (Ba, Sr)TiO3 ceramics was studied, thus providing the basis for preparation of capacitor ceramics.     

氧化钆对钛酸钡陶瓷结构和介电性能的影响

采用固相法制备得到了掺杂 1% (mol) Gd2 O3的钛酸钡陶瓷 ,并通过 X射线衍射分析和扫描电镜对其结构进行了表征。对其介电常数、介电损耗和室温电阻率进行了测定 ,结果表明 Gd2 O3掺杂 Ba Ti O3陶瓷的介电常数明显增加 ,介电损耗也有所升高 ,室温电阻率明显降低     

钛酸锶钡陶瓷的制备及介电性能

采用固相法和溶胶凝胶法制备钛酸锶钡(BaxSr1 xTiO3,BST)粉末,用X射线分析仪(XRD)和扫描电镜(SEM)分析2种方法制备的BST粉末的物相组成和显微形貌。固相法和溶胶凝胶法所得粉末制备的压坯分别在1 400℃和1 300℃烧结2 h得到BST陶瓷,用密度分析仪、扫描电镜(SEM)和阻抗分析仪对BST陶瓷的密度、断口显微形貌和介电性能进行分析,研究不同Ba/Sr比例和2种不同粉末颗粒尺寸对BST陶瓷介电性能的影响。结果表明:室温下,BaxSr1 xTiO3(x=0.5,0.6)为立方相,BaxSr1 xTiO3(x=0.7,0.8)为四方相;固相法粉末制备的BaxSr1 xTiO3(x=0.5,0.6,0.7,0.8)陶瓷的密度、颗粒尺寸和介电常数峰值均随Ba含量的增加而增加,居里温度随Ba含量的增加呈线性增加,线性拟合得到Tc=221.6+354x,BST陶瓷的介电常数随频率的增加而降低;与固相法粉末制备的BST陶瓷相比,溶胶凝胶法粉末制备的BaxSr1 xTiO3(x=0.5,0.6)陶瓷密度较高,但同时出现介电峰弥散,介电常数和介电损耗较低。     

Sm~(3+)掺杂ZnO-SiO_2-B_2O_3系微晶玻璃的制备及发光性能的研究

通过高温熔融法制备了ZnO-SiO2-B2O3:Sm3+系微晶玻璃,并采用SEM、XRD及荧光光谱仪研究了该微晶玻璃的析晶过程及发光性能。结果表明,该微晶玻璃的主晶相为尖晶石(ZnAl2O4),被紫外光激发能够发出红色光;晶化时间的改变导致了尖晶石的逐渐析出,改变了光谱谱线的强度但不改变谱线的位置。Sm3+最佳掺杂摩尔分数为0.4%。     

Study on Ferroelectric and Dielectric Properties of La-Doped CaBi4Ti4O15-Based Ceramics

Research on bismuthlayer structuredferroelectricceramics as piezoelectric material with high Curie tem-perature ,strong anisotropic characters ,lowdielectricdissipationfactor and lowaging rate has attracted in-creasing interest[1,2].It can be used to manu…     

Effect of Y2O3, CeO2 on Sintering Properties of Si3N4 Ceramics

The effect of rare earth oxides Y203 or Ce02 on sintering properties of Si3N4 ceramics was studied and the mechanism of assisting action during sintering was analyzed. The results in dicate that the best sintering properties appear in Si3N4 ceramics with 5% Y203 or 8% CeO2. Secondary crystallites are formed at grain boundaries after heat treatment,which decreases the amount of glass phase and contributes to the improvement of high-temperature mechanical properties of silicon nitride.     

氧化物添加对BaO-TiO2-Al2O3-SiO2玻璃陶瓷介电性能的影响

采用烧结法制备工艺,成功制备了BaO-TiO₂-Al₂O₃-SiO₂玻璃陶瓷,以钛酸钡体系玻璃陶瓷为基础成分添加不同种类氧化物(Y2O3,Ni2O3,ZrO2),并采用X射线衍射(XRD),场发射扫描电镜(FESEM),精密阻抗分析仪测试仪(LCR)对添加不同氧化物玻璃陶瓷样品的析出相成分、微观结构和介电性能进行表征,研究了氧化物添加对BaO-TiO₂-Al₂O₃-SiO₂玻璃陶瓷性能的影响。研究结果表明:添加不同的氧化物并未改变BaO-TiO₂-Al₂O₃-SiO₂玻璃陶瓷的析出相种类,但能够促进基体中钙钛矿结构钛酸钡结晶相的生成。同时添加不同氧化物后样品的致密度均随烧结温度的升高呈现先增大后减小的变化趋势,在最适烧结温度下,氧化物的添加提高了不同烧结玻璃陶瓷样品的致密度,并优化了样品的介电性能。通过添加不同种类氧化物获得了同时具有高致密度和良好介电性能的玻璃陶瓷成分,当添加0.5%(质量分数)Ni₂O₃时,样品在最佳烧结温度1230°C下烧结获得最大致密度为98.6%,提高了1.65%,样品室温下的介电常数高达1100,提高了139.5%。     

Sm2O3掺杂BSTN陶瓷的制备与介电性能

采用溶胶凝胶法制备了Sm3+掺杂(Ba,Sr)TiO3/(Ba,Sr)Nb2O6复相陶瓷,XRD衍射表明,样品由钙钛矿相和钨青铜相组成,无其他杂相生成。随着Sm3+掺杂量的增加,样品衍射峰向小角度方向移动,表明掺杂的Sm3+取代了体系中Nb5+及Ti4+。检测了样品的介电-温度性能,结果表明,随着Sm3+掺杂量的增加,样品的介电常数及介电损耗都有所降低,当Sm3+掺杂量达到0.004时,样品介电损耗最低,再增加Sm3+的掺杂量,样品的介电损耗又出现增加的趋势。可以得出,适量Sm3+的掺杂可以有效降低样品的介电损耗。     

MNb2O6-NaNbO3-SiO2(M=Pb,Ba,Sr)体系玻璃陶瓷纳米复合材料的结构和介电性能研究

应用铸造快冷及可控结晶技术制备3种玻璃陶瓷纳米复合介电材料——PbNb2O6 +NaNbO3 +SiO2 (PNS),BaNb2O6+ NaNbO3+ SiO2 (BNS)和SrNb2O6+ NaNbO3+ SiO2( SNS).研究了这3种复合材料的结晶性能,微观形貌和介电性能.X射线衍射(XRD)的分析结果显示:PNS及SNS的玻璃在750℃可控结晶时,均形成中间相A2Nb2O-7(A=Pb,Sr),且该中间相在850℃时消失,此时形成MNb2O6+NaNbO3(M=Pb,Sr)的高介电常数相,而BNS则未经过中间相,在750℃直接析出MNb2O6+NaNbO3(M=Ba)的高介电常数相.在所有的样品中,随着退火温度的升高,晶粒均有逐渐长大聚集的趋势.同时,SNS玻璃陶瓷在750℃及850℃结晶退火处理时,均析出枝状晶粒,异于PNS和BNS的球状晶粒.由可控结晶技术制备的玻璃陶瓷介电性能受热处理过程中所形成的介电相组成及其体积分数和晶粒尺寸的影响很大.分析测试了这3种体系玻璃陶瓷的介电常数与结晶化处理温度之间的关系及介电常数的电场稳定性.在900℃结晶退火时,PNS玻璃陶瓷具有最高的介电常数( ～501,1 kHz),而BNS的介电常数在0～15 kV ·mm-1的测试范围内具有最好的电场稳定性(＜15％).     

Effect of Gd2O3 and La2O3 on BaTiO3 -Based Ceramics

The addition of rare-earth oxides Gd2O3 and La2O3 to BaTiO3-based ceramics can restrain the growth of grain size, which obtained small grain size below 1 μm and high density. The dielectric constant at room temperature increased and the curve of ε-T was flattened which illustrated that the ferroelectricity of BaTiO3-based ceramics was weakened. In addition, it is illustrated that Gd2O3 leads to chemical nonhomogeneous property, i.e. core-shell structure and La2 O3 leads to chemical homogenous property, which take different effects on capacitance- temperature characteristic.