某机载SAR超宽带LFM波形产生系统性能分析

提出一种不同于常规脉压的扩展脉压。这种脉压方式可以得到更多的信号信息,为超宽带LFM脉压信号产生系统提供有效的分析手段。首先介绍了扩展脉压的原理,并在工程调试中加以应用。借助这种分析方法确定了某机载SAR超宽带LFM波形产生系统出现成对回波的原因,并分析了载漏和镜频对波形脉压性能的影响,为改善系统性能提供了依据。     

数字宽带LFM信号的数据率对脉冲压缩性能的影响

用数字方式合成超宽带LFM信号时,由于工作时钟和数据率的限制,信号的相位存在不连续性。本文从数据率对宽带数字LFM信号脉压波形的影响的分析和仿真入手,提出了对于大时带积（D〉4000）LFM信号,只要相位更新数据率等于或大于信号带宽,低频率更新数据率对其脉压性能不会造成严重影响,得出用低频率更新数据率器件同样可以产生脉压性能良好、信号带宽4倍或8倍于其频率更新数据率的超宽带LFM信号的结论,从而为用较低频率更新数据率的DDS器件产生带宽接近其相位更新数据率的宽带LFM信号提供了理论依据。     

UWB雷达LFM脉压信号数字产生系统性能分析

超宽带雷达线性调频（LFM）脉冲压缩信号产生系统是现代雷达技术的重要研究内容之一。该文基于波形存储直读法，提出了一种超宽带线性调频信号数字产生系统方案。对系统中幅度量化位数、采样频率、正交调制器误差和传输系统频域失真等因素对输出信号性能的影响进行了深入的理论分析，计算机仿真验证了这些分析结果。所得结论为超宽带LFM信号产生系统工程实现时参数选择、性能评估和性能优化提供重要的理论依据。     

大时带积线性调频信号源幅相误差分析与校正

针对产生LFM信号的数字方法，分析了系统的幅相误差来源，并根据误差频率对其进行了分类。提出了一种将正交调制LFM信号产生系统的幅相误差映射到基带后，在数字域利用复系数FIR滤波器进行校正的方案。针对直接数字波形合成LFM信号产生系统，将误差校正方法简化为直接对存储的数字波形进行预失真处理。最后将校正方法应用于实际系统，结果表明提出的幅相误差校正方案易行、有效，能明显提高输出LFM信号的性能。     

LFM频带扩展及搬移的设计

较详细地介绍了一种LFM信号频带扩展和搬移的设计,该系统实现了300MHz超宽带线性调频,并具有优良的线性相频特性、带内平坦度和低杂波性能。文中给出了研制结果。     

基于高斯插值提高雷达测距精度的研究

本文结合脉冲法雷达测距原理,分析了距离量化误差产生的原因.针对LFM信号加入高斯白噪声作脉冲压缩得到的脉压波形,结合先验信息,将脉压结果主瓣内的波形近似为高斯分布,利用脉压结果中采样最大值点和次大值点的位置信息和幅度信息作高斯插值处理,预估脉压波形真实峰值时间.仿真结果表明,通过高斯插值处理,距离量化误差显著减小,雷达...     

基于扫频激光器的超宽带线性调频信号产生传输研究

提出了一种基于扫频激光器的超宽带线性调频(LFM)信号产生和传输的方法。该方法使用扫频激光器产生频率随时间周期性变化的光信号,注入马赫-曾德尔调制器后产生载波抑制双边带光信号,利用嵌有光纤光栅(FBG)的Sagnac环完成双边带光信号的分离。Sagnac环的透射光信号经延时后与反射光信号拍频,从而产生了超宽带LFM信号。仿真分别产生了载频30 GHz、带宽16 GHz、时宽带宽积8000的超宽带连续波LFM信号和超宽带脉冲波LFM信号。所提方案解决了天线拉远场景中超宽带LFM信号经光纤传输时的功率周期性衰落问题。在多目标探测分析中,方案产生的信号表现出高精度临近目标分辨能力。所提方案具有载频、时宽、啁啾率和啁啾符号独立调谐的优点,可实现高载频、超宽带LFM信号的产生和功率周期性衰减抑制传输。     

基于线性调频的雷达通信一体化波形研究进展

雷达通信一体化是指在实现二者硬件共用的基础上，进一步进行波形融合，即用一个信号同时执行雷达和通信功能的技术，以优化系统性能，节约频谱资源。阐述了一体化的技术内涵及发展阶段，分析了线性调频（LFM）信号在一体化系统中的应用潜力，总结了LFM一体化波形设计、高频宽带LFM信号以及LFM一体化波形光学产生和处理的研究进展。分析认为，微波光子将在雷达通信一体化系统中发挥重要作用，未来的雷达通信一体化系统不仅是光学和电学技术相融合的系统，也是模拟和数字技术相结合的系统。     

基于多啁啾波形的超宽带多址系统的研究

基于啁啾(chirp)脉冲的超宽带系统具有成本低、耗能少和较高的系统增益等优点.本文在啁啾理论的基础上,提出一种针对多用户超宽带系统的新型啁啾波形.通过详尽分析该编码的相关性能,验证了该多址方案的合理性.利用多啁啾波形编码构建的多用户超宽带通信系统,兼具了脉冲超宽带和多带超宽带的优点.本文对基于多啁啾脉冲波形的多用户超宽带通信系统进行了详尽的理论分析,并进行了性能仿真,仿真结果表明:相对于传统脉冲超宽带系统,这种多啁啾波形的多用户系统具有更好的抵抗多址干扰的能力.     

基于VME总线的超宽带LFM信号源

本文介绍了一种Ku波段超宽带LFM信号源,并对输出信号的频谱进行了分析.结合DDS技术和直接频率合成技术设计了一种灵活的超宽带LFM信号源,综合带宽达到1600MHz.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.