耦合目标近场散射外推技术研究

针对具有多次散射的耦合目标在不满足远场条件下测量的散射方向图发生畸变的问题,通过分析耦合目标的近场-远场转换关系,提出一种"多发多收"模式的近场散射外推方法.在获得全角域的近场双站信息后,对各角度近场接收的散射数据进行外推处理,然后根据互易定理,将外推后的数据等效为"远场发射、近场接收"数据.接下来对该数据再进行一次外推,满足"远场发射、远场接收"的条件,最后取出对角线上的元素获得各角度的远场RCS（Radar Cross Section,RCS）.通过建立存在强耦合机制的二面角和腔体结构模型,利用FEKO和MATLAB软件对方法进行仿真,将"多发多收"外推的结果与远场RCS进行比对.结果表明：该方法得到的结果与远场RCS方向图吻合良好,全角域均值误差小于1dB,验证了方法的有效性.     

基于柱面扫描近场成像的RCS 测量方法研究

该文提出一种基于柱面扫描近场成像的RCS(Radar Cross Section)测量新方法:以理想的各向同性点散射中心模型为核心假设,通过详细的理论推导给出了一种具有通用性的基于柱面扫描近场成像的RCS 测量方法。该方法先得到目标的3 维雷达散射图像,再通过这些等效理想散射中心的散射场叠加获得远处散射场进而给出目标的远场RCS 值。该方法不仅能得到被测目标的3 维雷达散射图像,还能获得一定立体角域的目标远场RCS。相比只能得到2 维雷达散射图以及2 维平面角域RCS 结果的圆迹扫描测试相比,该文所提的柱面扫描测试能得到更多的目标散射信息,具有较强的实用性。仿真结果验证了新方法的可靠性。      

平面近远场变换的快速算法

基于考虑探头补偿的平面近远场变换理论 ,根据实际需要 ,提出了一种工程实用的平面近远场变换快速算法。通过该算法由近场测量数据变换得到的天线远场方向图 ,既能达到任意分辨率 ,又能节约计算内存和提高计算速度。     

基于三次样条插值法的柱面近场测量欠采样修正算法研究

为解决暗室近场测试效率低的问题,本文针对天线近场测量中高效测量方法进行了研究,提出了一种柱面近场欠采样恢复算法。该算法利用高精度的三次样条插值(cubic spline interpolation, CSI)法对未采样的点进行恢复,可减少采样点数,提高测试速度。此外,在柱面近场欠采样恢复CSI求解过程中充分利用系数矩阵的正定、对称等优良特性,使线性方程组的计算量从O(n³)降为O(n),大大提高了CSI的计算效率。最后使用插值后的近场幅度和相位结合柱面近远场变换理论求得天线远场方向图。为验证所提出算法的有效性,试验测试了天线样机,试验结果与理论分析一致。     

天线近远场变换的快速算法

基于考虑探头补偿的平面近远场变换理论,根据实际需要,提出了一种工程实用的平面近远场变换快速算法。通过该算法由近场测量数据变换得到的天线远场方向图,既能达到任意分辨率,又能节约计算内存和提高计算速度。     

平面近场反演技术

介绍了一种基于探头补偿的平面近场反演算法,为验证算法的有效性,在暗室对某阵列天线进行了近场反演和远场方向图比对验证。结果表明,该算法反演精度高,可在近场校准完毕后对方向图实现情况进行快速测试验证,提升阵列天线测试效率,有很好的工程实用性。     

天线平面近场测量中一种近远场变换方法研究

本文研究了一种应用于天线平面近场测量中完成近远场变换的数值算法。利用此方法可以依据天线平面近场测试数据快速简便地求得天线远场方向图及其它特性,其精度较高;同时可以很方便地进行探头修正,并讨论天线平面近场测试中各关键参数对测试结果的影响。本文给出了理论依据和具体计算实例,与传统方法进行了比较,并得出了结论。     

基于计算电磁学的一维线阵快速近场测量方法北大核心CSCD

研究了三种针对一维线天线阵列的快速近场测量方法,仅需二维近场扫描数据即可外推出线阵的单切面远场方向图。这三种单切面远场方向图测量方法包括平面/柱面波波谱展开法、等效源求解法和多极子平面波展开法。针对单切面方向图测量中二维格林函数存在的幅度误差,提出了一种幅度误差补偿方法,显著降低了原始近场数据外推变换得到的远场方向图的幅度测量误差。通过矩量法仿真得到的一维低副瓣线天线阵近远场数据及其比较结果验证了所提出方法的有效性,并通过仿真算例对比分析了不同外推方法之间的优缺点。其中基于计算电磁学的等效源展开方法及多极子平面波展开方法因其具有显著减少的采样点数、不存在数据截断以及灵活的采样位置等优点,可广泛应用于多种一维线阵单切面方向图测试应用场景中。     

平面波谱恢复算法在平面近场测量中的应用

介绍用于天线平面近场测量的一种近远场变换新算法。该法利用被测天线的平面波谱和口径场幅相分布之间的关系,以及天线口面的约束条件,用G-P迭代算法从平面波谱的置信谱域部分恢复出置信谱域外的平面波谱。这种方法减小了较小截断角下有限扫描面对测量精度的影响,并提高了天线近场测量的效率。     

大型天线近场测量的研究

本文运用了Jacobi-Bessel级数展开法对近场测量数据进行处理,推算出天线的远场方向图,给出了计算步骤和测量概要,最后,用1.5米反射面天线作为模拟天线,获得其近场数据,由此推出天线的远场方向图,并且和实测结果进行了比较.在确定大的和对地球引力敏感的空间天线远场方向图时,讨论了极平面构形在机械和电性能上的独特优点.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.