基于ADF4360-7的宽带雷达信号源设计

通过分析数字直接合成技术(DDS)和锁相环技术(PLL)的各自性能特点,介绍了一种采用DDS输出的低频段线性调频信号作为PLL激励源的方案来产生高频段线性调频信号,并指出了设计中需要注意的事项。在该系统中采用AD I公司新推出的芯片ADF4360-7芯片设计锁相环路,ADF4360系列芯片内部集成了VCO,这是ADF4360的一大新的特点。通过该系统实现的宽带雷达信号作为UHF雷达的信号源,其输出频率范围为590.769 MHz~609.231 MHz。     

X波段LFMCW雷达频率源的设计与实现

设计并实现了一种X波段LFMCW雷达的频率源,通过使用DDS直接去激励PLL的技术,以AD9956和ADF4002为核心芯片,充分使用ADF4360-X等系列频率合成芯片,采用仿真设计软件ADS和ADIsimPLL完成了电路参数的设计,并讨论和分析了整个系统的相位噪声以及所需要考虑的一些问题。最后经过实验验证得到了本项目需要的频率为9.2~9.4GHz、频率步进25kHz、调制周期2.4ms、相位噪声-85dBc@100kHz的三角波调频信号。     

使用Nios Ⅱ嵌入式软核CPU配置快速锁定锁相环频率合成芯片ADF4193

介绍了锁相环的原理和ADF4193芯片的特点和配置方式,结合Altera的SOPC技术,利用SOPC Builder中集成的SPI核,设计了一种基于Nios II软核CPU的嵌入式系统,用来配置AD公司生产的快锁芯片ADF4193。实测结果表明,配置成功。并且经过适当修改可用于其他基于SPI串口配置的芯片。     

DDS＋PLL高性能频率合成器的设计与实现

结合DDs＋PLL技术,采用DDS芯片AD9851和集成锁相芯片ADF4113完成了GSM1800MHz系统中高性能频率合成器的设计与实现。详细介绍系统中核心芯片的性能、结构及使用方法,并运用ADS和ADISimPLL软件对设计方案进行仿真和优化,特别是滤波器的选择与设计。测试结果表明,该频率合成器具有高稳定度、高分辨率、低相位噪声的特点,达到了设计指标要求。     

五通道接收机通道设计

介绍了五通道接收机的设计思路以及工作原理,并对其接收系统中的相位一致性和频率合成器做了重点介绍,频率合成器采用ADF4106和AD9858芯片实现。最后对接收机噪声系数和接收增益进行分析设计。通过集成化芯片的使用,实现接收机体积小、功耗低、集成度高的特点。     

基于ADF4110的频率发射系统

结合美国ADI公司推出低功耗宽带集成锁相环芯片ADF4110的性能特点以及锁相环频率合成器的原理,给出了用ADF4110锁相环芯片设计频率自动跟踪系统的硬件电路,并给出了频域和时域的测试结果,表明电路可以进行精确实时功率控制和本振频率控制,可以满足不同频点发射机的要求。     

基于嵌入式的无线条码扫描仪系统的设计

传统有线条码扫描仪受数据线长度的影响,而市场上的无线条码扫描仪无线通信距离一般在30~100 m范围内,在使用范围和用途上造成一些限制。提出一种基于嵌入式的无线扫描系统的设计,其最大无线通信距离为800 m。该设计采用Philips公司的LPC2142 ARM嵌入式芯片和ADI公司的ADF7020无线收发芯片。LPC2142接收条码扫描仪采集的数据并进行处理,ADF7020完成无线数据发送接收。     

ADF4360—4原理及其在GPS信号源中的应用

通过分析频率合成器ADF4360—4的工作原理、性能特点及其典型应用,提出一种以FPGA芯片和频率合成器ADF4360—4为核心的GPS信号源系统,给出了总体及模块设计方案,并分模块进行了设计与实现。测试结果表明,以FPGA芯片为核心的基带／中频模块完成了GPS信号的BPSK调制和扩频调制,实现了GPS数字中频信号输出;以频率合成器ADF4360—4为核心的射频模块完成了上变频功能,实现了信号的射频调制。     

ADF4157在数字预失真时钟方案中的应用

在功放数字预失真系统中,对其上下变频的本振时钟有着很高的要求,为此设计一种新的并结合ADF4157的数字预失真时钟方案。本文介绍了时钟方案的整体硬件架构设计以及ADF4157芯片主要寄存器配置,ADF4157的相位噪声和锁定时间通过ADIs-imPLL仿真且分析其结果。对基于此时钟方案制作出来的PCB板仔细调试之后,ADF4157输出的本振频率达到设计要求。     

Staccato单芯片收发IC速率480Mbps集成MAC控制到RF收发电路

Chrontel公司日前发布了一款型号为CH7023的TV解码器芯片，该器件可将手机、PDA和便携媒体播放器的视频直接输出至常规的NTSC或PAL电视。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first