The System HfO2-TiO2

The system HfO₂-TiO₂ was studied in the 0 to 50 mol% TiO₂ region using X-ray diffraction and thermal analysis. The monoclinic ( M ) ⇌ tetragonal ( T ) phase transition of HfO₂ was found at 1750°± 20°C. The definite compound HfTiO₄ melts incongruently at 1980°± 10°C, 53 mol% TiO₂. A metatectic at 2300°± 20°C, 35 mol% TiO₂ was observed. The eutectoid decomposition of HfO_2,ss) ( T ) → HfO_2,ss ( M ) + HfTiO_34,ssss occurred at 1570°± 20°C and 22.5 mol% TiO₂. The maximum solubility of TiO₂ in HfO_2,ss,( M ) is 10 mol% at 1570°± 20°C and in HfO_2,ss ( T ) is 30 mol% at 1980°± 10°C. On the HfO₂-rich side and in the 10 to 30 mol% TiO₂ range a second monoclinic phase M of HfO₂( M ) type was observed for samples cooled after a melting or an annealing above 1600°C. The phase relations of the complete phase diagram are given, using the data of Schevchenko et al. for the 50% to 100% TiO₂ region, which are based on thermal analysis techniques.     

Synthesis, Characterization, and Consolidation of Si3N4 Obtained from Ammonolysis of SiCl4

Thermal decomposition of silicon diimide, Si(NH)₂, in vacuum resulted in very-high-purity, fine-particle-size, amorphous Si₃N₄ powders. The amorphous powder was isothermally aged at 50° to 100° intervals from 1000° to 1500°C for phase identification. Examination of ir spectra and X-ray diffraction patterns indicated a slow and gradual transition from an amorphous material to a crystalline α-phase occurring at 1200°C for >4 h and/or 1300° to 1400°C for 2 h. As the temperature was increased to ≥1450°C for 2 h, the crystalline β-phase was observed. Phase nucleation and crystallite morphology in this system were studied by electron microscopy and electron diffraction combined with TG as functions of temperature for the inorganic polymer starting materials. Powders prepared in this manner with 4 wt% Mg₃N₂ added as a sintering aid were hot-pressed to high-density fine-grained bodies with uniform microstructures. The optimum hot-pressing condition was 1650°C for 1 h. Silicon concentration steadily increased as the hot-pressing temperature or time was increased. A method for chemical etching for high-density fine-grained Si₃N₄ is described. Electrical measurements between room temperature and ∼500°C indicated dielectric constant and tan δ values of 8.3±0.03 and 0.65±0.05×10⁻², respectively.     

Preparation of Fine Monoclinic Hafnia Powders by Hydrothermal Oxidation

Fine single-phase monoclinic HfO₂ powders were prepared from Hf metal chips and high-temperature high-pressure water by hydrothermal oxidation in closed and open systems. In the closed system, Hf metal was converted to HfO₂ by treatment at ≥600°C under 100 MPa for 3 h. At 500°C half the Hf reacted to produce Hf hydride and a small amount of HfO₂. In the open system, Hf metal scarcely reacted at 500°C, but at 600°C the reaction was more rapid than the corresponding run in the closed system.     

Phase Equilibria in the System HfO2–Y2O3–CaO

Phase equilibria in the system HfO₂–Y₂O₃–CaO were studied in the temperature range 1250° to 2850°C by both experimental methods (X-ray phase analysis at 20° to 2000°C, petrography, annealing and quenching, differential thermal analysis in He at temperatures to 2500°C, thermal analysis in air using a solar furnace at temperatures to 3000°C, and electron microprobe X-ray analysis) and theoretical means (development of a mathematical model for the liquidus surface by means of the reduced polynomial method). Phase equilibria were determined by the structure of the restricting binary systems. No ternary compounds were found. The liquidus was characterized by the presence of six four-phase, invariant equilibria. Solid solutions were based on monoclinic (M), tetragonal (T), and cubic (F) modifications of HfO₂; C and H forms of Y₂O₃; CaO; and CaHfO₃ that crystallized in two polymorphous modifications, namely, the cubic and rhombic perovskite-type structure.     

Characterization of Alkoxy-Derived Yttria-Stabilized Hafnia

High-purity submicron HfO₂−Y₂O₃ powders were prepared by the simultaneous hydrolytic decomposition of hafnium and yttrium alkoxides. Compositions of 1 to 7 mol% Y₂O₃ in HfO₂ were studied by high-temperature X-ray diffraction, electron microscopy, BET surface area measurements, emission spectrographic analysis, TGA, and DTA. X-ray diffraction and atomic absorption were used to determine the Y₂O₃ concentration. Hot-pressing or cold-pressing and sintering of the powders resulted in nearly theoretically dense bodies with uniform microstructure containing grains 1 to 5 μm in size. Surface reflection ir spectra were obtained for monoclinic, tetragonal, and cubic specimens. Fully cubic HfO₂ with 7 mol% Y₂O₃ additions was obtained at a relatively low temperature. The hot-pressed specimens, initially slightly oxygen-deficient or gray HfO_{2- x} , were reoxidized at 1000°C with no deleterious effects; thin sections were translucent to incident light.     

Synthesis of Transparent Nd-doped HfO2-Y2O3 Ceramics Using HIP

A Nd-doped HfO₂-Y₂O₃ ceramic having excellent transmittance was synthesized by HIPing, using high-purity powders (>99.99 wt%) of Y₂O₃, Nd₂O₃, and HfO₂. The mixed powder compacts of these powders were sintered at 1650°C for 1 h under vacuum and HIPed at 1700°C for 3 h under 196 MPa of Ar. The specimen after HIPing consisted of uniform grains measuring about 30 μm and having pore-free structure. The optical transmittance of 1 at.% Nd-doped 2.6 mol% HfO₂-Y₂O₃ ceramics ranging between visible and infrared wavelength was almost equivalent or superior to that of a Nd:Y₂O₃ single crystal grown by the Verneuil method.     

Fracture Strength and Microstructure of β-SiAlON with Hafnia Addition

The influence of HfO₂ addition on the fracture strength and microstructure of ß-SiAlON ceramics sintered from Si₃N₄ and Al₂O₃ powders was investigated. The strength was increased by the addition of HfO₂, from ∼500 MPa to 700 MPa, and was almost constant from ambient temperature to 1300°C. Monoclinic HfO₂ grains that were distributed in the SiAlON grain boundaries had a flat shape (∼20 nm thick) and were surrounded by an amorphous phase. The aluminum concentration in ß-SiAlON in the samples with an Al₂O₃ starting composition of 15 wt% was decreased by the addition of HfO₂. The amount of secondary phases was very small at grain boundaries between the SiAlON grains; amorphous phases were observed infrequently at the triple points but were very small (∼20 nm). The effects of HfO₂ addition on the mechanism of the microstructure development and fracture strength are discussed.     

Effects of Phase Change and Oxygen Permeability in Oxide Scales on Oxidation Kinetics of ZrB2 and HfB2

A wide range of experimental data on the oxidation of ZrB₂ and HfB₂ as a function of temperature (800°–2500°C) is interpreted using a mechanistic model that relaxes two significant assumptions made in prior work. First, inclusion of the effect of volume change associated with monoclinic to tetragonal phase change of the MeO₂ phases is found to rationalize the observations by several investigators of abrupt changes in weight gain, recession, and oxygen consumed, as the temperature is raised through the transformation temperatures for ZrO₂ and HfO₂. Second, the inclusion of oxygen permeability in ZrO₂ is found to rationalize the enhancement in oxidation behavior at very high temperatures (>1800°C) of ZrB₂, while the effect of oxygen permeability in HfO₂ is negligible. Based on these considerations, the significant advantage of HfB₂ over ZrB₂ is credited to the higher transformation temperature and lower oxygen permeability of HfO₂ compared with ZrO₂.     

Spectral Imaging Analysis of Interfacial Reactions and Microstructures in Brazing of Alumina by a Hf-Ag-Cu Alloy

A 59Ag-40Cu·1Hf (at.%) alloy that was heated on 99.6% alumina for 30 min at 1000°3C in gettered Ar melted, spread, and adhered when cooled to room temperature. Conventional scanning electron microscopic analysis with energy dispersive X-ray spectroscopy (SEM/EDXS) did not detect any reaction products at the interface. Automated X-ray spectral image analysis of the interface region revealed small pockets of a phase containing Hf and O with a stoichiometry equivalent to HfO₂. Samples for transmission electron microscopic (TEM) analysis were cut to include specific HfO₂ particles using focused ion beam (FIB) milling. TEM images showed that the particles were 10 to 100 nm in diameter and embedded in the alumina grains at the interface with the alloy. Based on the measured stoichiometry, electron diffraction analysis in the transmission electron microscope, and a standard Gibbs energy of reaction of Δ G °= -203.3 kJ at 1300 K for the reaction 3Hf + 2Al₂O₃→ 3HfO₂+ 4Al, the particles are judged to be HfO₂ that formed from simple redox reaction between Hf and Al₂O₃.     

Revised ThO2-Nb2O5 Phase Diagram

The phase equilibrium diagram of the system ThO₂-Nb₂O was redetermined near the composition Th₂Nb₂O₉. This phase was found to melt incongruenlly at 1362°C, with a eutectic temperature at ∼1350°C. The peritectic and eutectic compositions must occur between 60 and ∼64 mol % ThO₂. From single crystal and powder X-ray diffraction data, Th₂ Nb₂O₉ was found to have a primitive monoclinic unit cell with a = 6.711(1), b = 25.254(5), c=7.757(1)×10⁻¹nm, β=90.46 (1)°.     

High-Temperature Oxidation at 1500° and 1600°C of SiC/Graphite Coated with Sol–Gel-Derived HfO2

Oxidation of SiC compositionally graded (SCGed) graphite coated with HfO₂ derived from HfCl₄ by a sol–gel process was performed at 1500° and 1600°C in a flowing gas mixture of Ar and O₂ (80/20 kPa). SCGed graphite was produced by reaction of graphite with either molten Si or SiO gas at 1450°C. The sol–gel-derived HfO₂ precursor was deposited on SCGed graphite by a dip-coating method. Isothermal and cyclic oxidation of uncoated- and HfO₂-coated SCGed graphite was studied by monitoring overall weight change using an electro-microbalance. Scanning electron microscopy with energy-dispersive X-ray analysis was used to observe the surfaces and cross-sections of the oxidized HfO₂-coated SCGed graphite. The formation of HfSiO₄ was confirmed on the outer layer of the oxidized sample, beneath which a thin silica layer was formed. The improved oxidation resistance of SCGed graphite by coating with HfO₂ is discussed on the basis of the formation of these two layers.     

Kinetics of Hexacelsian-to-Celsian Phase Transformation in SrAl2Si2O8

The kinetics of hexacelsian-to-celsian phase transformation in SrAl₂Si₂O₈ have been investigated. Phase-pure hexacelsian was prepared by heat treatment of glass flakes at 990°C for 10 h. Hexacelsian flakes were isothermally heat-treated at 1026°, 1050°, 1100°, 1152°, and 1200°C for various times. The amounts of monoclinic celsian formed were determined using quantitative X-ray diffraction. Values of reaction rate constant, k , at various temperatures were evaluated from the Avrami equation. The Avrami parameter was determined to be 1.1, suggesting one-dimensional growth with the interface rather than a diffusion-controlled transformation mechanism. From the temperature dependence of k , the apparent activation energy for this reaction was evaluated to be 527 ± 50 kj/mol (126 ± 12 kcal/mol). This value is consistent with a mechanism involving the transformation of the layered hexacelsian structure to a three-dimensional network celsian structure which necessitates breaking of the strongest bonds, the Si─O bonds.     

Formation of Monoclinic Hafnium Titanate Thin Films Via the Sol–Gel Method

Hafnium titanate films are generating increasing interest because of their potential application as high- k dielectrics materials for the semiconductor industry. We have investigated sol–gel processing as an alternative route to obtain hafnium titanate thin films. Hafnia-titania films of different compositions have been synthesized using HfCl₄ and TiCl₄ as precursors. The HfO₂–TiO₂ system composition with 50 mol% of TiO₂ and 50 mol% of HfO₂ has allowed the formation of a hafnium titanate film after annealing at 1000°C. The films exhibited a homogeneous nanocrystalline structure and a monoclinic hafnium titanate phase that has never been obtained before in thin films. The films resulted in the formation of homogeneously distributed nanocrystals with an average size of 50 nm. Different compositions, with higher or lower hafnia contents, produced anatase crystalline films after annealing at 1000°C.     

The System HfO2-Y2O3-Er2O3

A mathematical model of the liquidus surface based on a reduced polynomial method was proposed for the system HfO₂-Y₂O₃-Er₂O₃. The results of calculations according to this model agree fairly well with the experimental data. Phase equilibria in the system HfO₂-Y₂O₃-Er₂O₃ were studied on melted (as-cast) and annealed samples using X-ray diffraction (at room and high temperatures) and micro-structural and petrographic analyses. The crystallization paths in the system HfO₂-Y₂O₃-Er₂O₃ were established. The system HfO₂-Y₂O₃-Er₂O₃ is characterized by the formation of extended solid solutions based on the fluorite-type (F) form of HfO₂ and cubic (C) and hexagonal (H) forms of Y₂O₃ and Er₂O₃. The boundary curves of these solid solutions have the minima at 2370°C (15. 5 mol% HfO₂, 49. 5 mol% Y₂O₃) and 2360°C (10. 5 mol% HfO₂, 45. 5 mol% Y₂O₃). No compounds were found to exist in the system investigated.     

Crystallization and Phase Transformation Process in Zirconia: An in situ High-Temperature X-ray Diffraction Study

Amorphous zirconia precursors were made by the precipitation of a zirconium tetrachloride solution with either slow (8 h) or rapid additions of ammonium hydroxide at a pH of 10.5. Following calcination at 500°C for 4 h, the rapidly precipitated precursor exhibited predominantly monoclinic ZrO₂ phase, while the slowly precipitated precursor produced the tetragonal ZrO₂ phase. The crystallization and phase transformations were followed by in situ high-temperature X-ray diffraction (HTXRD) for both specimens in helium and in air. Each amorphous precursor first crystallizes as the tetragonal phase at about 450°C. A tetragonal-to-monoclinic phase transformation of the rapidly precipitated material was observed on cooling at about 275°C. Surface impregnation of sulfate ions following precipitation inhibited the tetragonal-to-monoclinic transformation for the rapidly precipitated ZrO₂ sample. The crystallite size for the t -ZrO₂ of all samples, irrespective of whether they transform to monoclinic, was approximately 11 nm, indicating that the t → m transformation in these materials is not controlled by differences in crystallite size. It is therefore suggested that anionic vacancies control the tetragonal-to-monoclinic phase transformation on cooling, and that oxygen adsorption triggers this phase transformation.     

Phase Transformation Kinetics in the System Bismuth Oxide-Zirconia

The effect of ZrO₂ addition on the phase transformation of Bi₂O₃ was studied with powder X-ray diffraction and differential thermal analysis. Samples containing higher than a few mole percent ZrO₂ were obtained as the metastable β phase (tetragonal) at room temperature when they were cooled at 20°C/min from 800°C where the δ phase (fcc) is stable. When the same samples were cooled at the same rate from 1000°C, which is above the solidus, they formed the stable α phase (monoclinic) at room temperature. Evidence for the relatively higher solubility of ZrO₂ in the α phase is discussed to explain this observation.     

Synthesis of Hf1-x, Zrx02 (O<x<1) with Orthorhombic Symmetry

Three starting materials, Hf_1-xZr_xO₂ (x =0.24, 0.50, 0.74), were prepared and treated at 600°C and 6 GPa for 30 min. X-ray powder diffraction patterns of the products indicated only orthorhombic HfO₂. The lattice parameters increased linearly as x approached 1 (ZrO₂); a continuous solid-solution series was observed.     

Formation and Microwave Dielectric Properties of the Mg2V2O7 Ceramics

The formation process and microwave dielectric properties of the Mg₂V₂O₇ ceramics were investigated. The MgV₂O₆ phase that was formed at around 450°C interacted with remnant MgO above 590°C to form a homogeneous monoclinic Mg₂V₂O₇ phase. Finally, this monoclinic Mg₂V₂O₇ phase was changed to a triclinic Mg₂V₂O₇ phase for the specimen fired at 800°C. Sintering at 950°C for more than 5 h produced high-density triclinic Mg₂V₂O₇ ceramics. In particular, the Mg₂V₂O₇ ceramics sintered at 950°C for 10 h exhibited the good microwave dielectric properties of ɛ_r=10.5, Q × f =58 275 GHz, and τ_f=−26.9 ppm/°C.     

Nanometer-Sized ZrO2 Particles Prepared by a Sol–Emulsion–Gel Method

ZrO₂ powder was prepared by a sol–emulsion–gel method at temperatures below 140°C from ZrO(NO₃)₂· n H₂O. The asprepared powder was amorphous, but crystallized into the tetragonal structure by 600°C. The metastable tetragonal powder (600°C) was comprised of ultrafine 4- to 6-nm size particles. On heat treatment, the tetragonal form completely transformed into the monoclinic state at 1100°C. Preliminary studies indicate good sinterability with densities greater than 94% at 1100°C and with a grain size of 0.25 μ.     

Thermal Stability, Phase Evolution, and Crystallization in Si-B-C-N Ceramics Derived from a Polyborosilazane Precursor

Amorphous Si-B-C-N ceramic powder samples obtained by thermolysis of boron-modified polysilazane, {B[C₂H₄Si(H)NH]₃} _n , were isothermally annealed at different temperatures (1400–1800°C) and hold times (3, 10, 30, and 100 h). A qualitative and semiquantitative analysis of the crystallization behavior of the materials was performed using X-ray diffraction (XRD). The phase evolution was additionally followed by ¹¹B and ²⁹Si MAS NMR as well as by FT-IR spectroscopy in transmission and diffuse reflection (DRIFTS) modes. Bulk chemical analyses of selected samples were performed to determine changes in the chemistry/phase composition of the materials. It was observed that silicon carbide is the first phase to nucleate around 1400–1500°C, whereas silicon nitride nucleates at and above 1700°C. Crystallization accelerates with increasing annealing temperature and proceeds with increasing annealing time. Furthermore, the surface area of the powders strongly influences the thermal stability of silicon nitride and thus controls overall chemical and phase composition of the materials on thermal treatment.