超导隧道结亚谐波混频器的研究

本文探讨了新型的超导隧道结亚谐波混频器。其混频作用是通过由超导体—隔离体—超导体(SIS)构成的隧道结完成。在性能上可同通常的Schottky二极管亚谐波混频器媲美,基于Tucker量子混频理论,对这种新型混频器进行了噪声和变频效率的分析研究。     

Performance of Arrays of SIS Junctions in Heterodyne Mixers

We have made a systematic experimental study of the performance of millimeter-wave quasiparticle heterodyne mixers which use arrays of SIS tunnel junctions. Sets of arrays with N =1, 5, 10, 25, and 50 junctions in series were fabricated by photolithography. All of the arrays in a given set were made on a single silicon wafer so that their response time parameter omega/sub S/R/sub N/C would be the same. Junction areas were scaled so that the total impedance was the same for each array in a set. Sets of arrays from four wafers with values of omega/sub S/R/sub N/C ranging from 2.6 to 13 were evaluated in mixers at 33 and 36 GHz. These measurements showed that the signal power required to saturate the mixers varies as N/sup 2/ and that the conversion efficiency is nearly independent of N for all values of omega/sub S/R/sub N/C. The mixer noise temperature is independent of N for large values of omega/sub S/R/sub N/C. Therefore, the dynamic range of an SIS quasiparticle mixer can increase in proportion to N/sup 2/. For small values of as omega/sub S/R/sub N/C, however, the mixer noise increases systematically with N. This correlation suggests that the junction capacitance affects the coupling between junctions that can contribute to the noise.     

A Tuning Circuit with Two Half-Wave Distributed Junctions for All-NbN SIS Mixers

A novel broadband tuning circuit composed of two low-current-density half-wave NbN/MgO/NbN tunnel junctions connected by a half-wave NbN/MgO/NbN microstrip line has been successfully tested in a quasi-optical mixer at frequencies above 700 GHz. The circuit had a designed center frequency of 870 GHz, was integrated in a center-fed twin-slot antenna, and was fed via a quarter-wave impedance transformer. Heterodyne measurments showed double-side-band receiver noise temperatures equivalent to 6-9 quanta from 675 to 810 GHz for a mixer with a current density of 6.7 kA/cm². The RF bandwidth was broader than that of a conventional mixer using a full-wave junction with the same current density.     

Magnetic Tunnel Junctions for Spintronic Memories and Beyond

In this paper, recent developments in magnetic tunnel junctions (MTJs) are reported with their potential impacts on integrated circuits. MTJs consist of two metal ferromagnets separated by a thin insulator and exhibit two resistances, low (R_p) or high (R_ap) depending on the relative direction of ferromagnet magnetizations, parallel (P) or antiparallel (AP), respectively. Tunnel magnetoresistance (TMR) ratios, defined as (R_ap $R_p)/R_p as high as 361%, have been obtained in MTJs with Co₄₀Fe₄₀B₂₀ fixed and free layers made by sputtering with an industry-standard exchange-bias structure and post deposition annealing at Ta = 400 degC. The corresponding output voltage swing DeltaV is over 500 mV, which is five times greater than that of the conventional amorphous Al-O-barrier MTJs. The highest TMR ratio obtained so far is 500% in a pseudospin-valve MTJ annealed at Ta = 475 degC, showing a high potential of the current material system. In addition to this high-output voltage swing, current-induced magnetization switching (CIMS) takes place at the critical current densities (J_CO) on the order of 10⁶ A/cm² in these MgO-barrier MTJs. Furthermore, high antiferromagnetic coupling between the two CoFeB layers in a synthetic ferrimagnetic free layer has been shown to result in a high thermal-stability factor with a reduced J_CO compared to single free-layer MTJs. The high TMR ratio enabled by the MgO-barrier MTJs, together with the demonstration of CIMS at a low J_CO, allows development of not only scalable magnetoresistive random-access memory with feature sizes below 90 nm but also new memory-in-logic CMOS circuits that can overcome a number of bottlenecks in the current integrated-circuit architecture     

Large Tunnel Magnetoresistance in Epitaxial Oxide Spin‐Filter Tunnel Junctions

A high‐performance spin filter tunnel junction composed of an epitaxial oxide heterostructure is reported. By independently controlling the magnetic orientations of ferromagnetic tunnel barrier and electrode layers, a tunnel magnetoresistance ratio exceeding 120% is obtained purely by the spin filtering effect. A newly introduced spin filter material, Pr_0.8Ca_0.2Mn_1‐yCo_yO₃, is shown to be useful for building novel multibarrier spintronic tunnel devices due to its composition‐controlled magnetic hardness.     

Deterministic modelling of indoor radio propagation at 40–60 Ghz

Factors that influence the accuracy of high frequency models for indoor radio propagation at 40–60 GHz are identified and discussed. Simulation results obtained on the basis of Geometrical Optics are presented. The reliability of these results is examined by comparing them with those obtained from empirical measurements.     

A Superconducting Tunnel Junction Receiver for 230 GHz

The performance of superconducting tunnel junctions as high-frequency receivers is discussed. Low-noise mixing in superconductor insulator-superconductor (SIS) quasi-particle tunnel junctions has been seen for frequencies up to 400 GHz. Such mixers have the significant advantage of small local-oscillator power requirements. A receiver has been constructed which has a single-sideband (SSB) receiver noise temperature of 305 K at 241 GHz.     

Scattering at Circular-to-Rectangular Waveguide Junctions

A formally exact solution is given for the problem of scattering at a circular-to-rectangular waveguide junction and at a thick diaphragm, with a centered circular aperture, in a rectangular waveguide. The method uses normal TE and TM mode expansions of the waveguide fields and traditional mode matching of the transverse electric and magnetic fields at the junction boundary. Exact closed-form expressions are obtained for the electric field mode-matching coefficients which couple the TE(TM) modes in the rectangular guide to the TE(TM) and TM(TE) modes in the circular guide. Numerical results are presented for the case of TE/sub 10/ mode propagation in the larger rectangular guide with all other modes cutoff. Convergent numerical results for the equivalent shunt susceptances of such junctions are obtained when about 12 modes (eight TE and four TM) are retained in the circular waveguide or in the circular aperture of the diaphragm. The results are graphically compared with formulas and curves due to the quasi-static theory of Bethe and the variational theory given in the Waveguide Handbook [2].     

Performance of GaAs MESFET Mixers at X Band

A theoretical analysis and experimental verification of the signal properties of the GaAs MESFET mixer are presented. Experimental techniques for evaluating some of the mixer parameters are described. Experiments performed on GaAs MESFET mixers at X band show that good noise performance and large dynamic range can be achieved with conversion gain. A conversion gain over 6 dB is measured at 7.8 GHz. Noise figures as low as 7.4 dB and output third-order intermodulation intercepts of +18 dBm have heen obtained at 8 GHz with a balanced MESFET mixer.     

双势垒隧道发光结的结构特点及其性能分析

成功地制备了Cu-Al2O3-MgF2-Au及Si-SiO2-Al-Al2O3-Au两种结构双势垒隧道发光结。由于双势垒结中第二栅存在着不同的分立能级,电子存在共振隧穿效应,使双势垒隧道结发光光谱的波长范围及谱峰位置比普通单势垒隧道结均向短波方向发生了移动。对双势垒隧道发光结的I-V特性测试表明,I-V曲线中存在着明显的负阻区,分析表明,负阻现象与电子的隧穿特性、表面等离极化激元(SPP)的激发及SPP的耦合发光之间相互关联。     

The Application of Superconducting Tunnel Junction Detectors to Astronomy

Detectors based on the superconducting-insulating-superconducting (SIS) junction long ago surpassed Schottky-diode semiconductor detectors as the most sensitive heterodyne mixers in the millimeter and submillimeter (far-infrared) wavelength range. Other novel superconducting device configurations have been applied as direct detectors. Though still in the early stages of development, and yet to find widespread application, they have demonstrated advantages over traditional semiconductor detectors in specialized situations. Exciting progress has been made in recent years in developing the superconducting tunnel junctions (STJ) as a photon detector for optical and near-optical wavelengths, where silicon CCD's are currently dominant. I examine some of the areas in which the properties of STJ detectors may best match the instrument capabilities that astronomical observations require, and discuss the implications of the intrinsic spectral resolution of the STJ. This capability will enable a significant increase in observing efficiency, once the technology matures, that should justify increased complexity of cryogenic systems, particularly for instruments to be used on the next generation of large ground-based telescopes.     

Strong Surface‐Termination Effect on Electroresistance in Ferroelectric Tunnel Junctions

Tunnel electroresistance in ferroelectric tunnel junctions (FTJs) has attracted considerable interest, because of a promising application to nonvolatile memories. Development of ferroelectric thin‐film devices requires atomic‐scale band‐structure engineering based on depolarization‐field effects at interfaces. By using FTJs consisting of ultrathin layers of the prototypical ferroelectric BaTiO₃, it is demonstrated that the surface termination of the ferroelectric in contact with a simple‐metal electrode critically affects properties of electroresistance. BaTiO₃ barrier‐layers with TiO₂ or BaO terminations show opposing relationships between the polarization direction and the resistance state. The resistance‐switching ratio in the junctions can be remarkably enhanced up to 10⁵% at room temperature, by artificially controlling the fraction of BaO termination. These results are explained in terms of the termination dependence of the depolarization field that is generated by a dead layer and imperfect charge screening. The findings on the mechanism of tunnel electroresistance should lead to performance improvements in the devices based on nanoscale ferroelectrics.     

Superconducting lead cavities at 35 GHz

An investigation of machined superconducting lead cavities operating in the circular cylindrical TE011mode at 34.8 GHz is reported. Measured values of the surface resistance and the shift of the resonance frequency are presented and compared with calculated values. Construction criteria for high-Q cavities are proposed, based on a discussion of the different loss mechanisms in a cavity. According to these criteria 10 cavities were processed and investigated by Q measurements. The surfaces were examined by microscope. A new untraditional method for examining machined surfaces was applied. Recognizing that a surface with surface defects has both inferior electrical properties and decreased mechanical strength compared with a perfect surface, different surfaces were treated in ultrasonic baths in order to examine the mechanical strength. The degree of destruction of the surfaces was compared with the Q values of cavities with surfaces constructed in the same way.     

The Drive Force of Electrical Breakdown of Large‐Area Molecular Tunnel Junctions

The origin of electrical breakdown of molecular tunnel junctions is systematically studied by determination of the breakdown voltages as a function of six types of bottom‐electrodes (Au, Ag, Pt, Pd, Ni, and Cu) and different thickness of self‐assembled monolayers of n‐alkanethiolates, S(CH₂)_n–1CH₃ with n = 2, 4, …, 18, with GaO_x/EGaIn top contacts. It is found that at positive bias, the migration of metallic atoms is dominated by the wind force, but, at negative bias, both the wind force and direct force are involved in the mechanism of filament formation. Remarkably, the breakdown voltage is independent of the molecular length for short molecules (n < 10), and the breakdown field could be improved by a factor of ≈2 from 0.80 to 1.5 GV m^?1 by replacing the Ag with Pt (or Ni) bottom electrodes. These findings give insights into the design of stable molecular junctions.     

MIM隧道发光结的光谱分析及负阻现象

在MIM隧道发光结的研究过程中,结的发光是SPP快模还是慢模起主要作用,一直是许多学者争论的主题。本文利用扫描电子显微镜估计MIM隧道结的表面粗糙度,然后根据对结的发光光谱的数据分析,得出快模在发光中占主要地位的结论,并以此解释MIM结I—V特性中的负阻现象。     

Prediction methods for rain attenuation statistics at variable path angles and carrier frequencies between 13 and 100 Ghz

Fade depth and space diversity statistics of propagation along earth-satellite paths have been calculated from radar reflectivity data of rain using modeling procedures. The reflectivity data base was obtained during the summer of 1973 at Wallops Island, Va., using a high resolutionSband radar interfaced with a computer and digital processing system. Fade statistics have been calculated for various path angles at several frequencies between 13 and 100 GHz. Subsequent analysis has demonstrated the ability to predict the following: 1) fade statistics at other path elevation angles given similar type statistics at a particular path angle, 2) space diversity statistics at other frequencies, given similar type statistics at a particular frequency, and 3) fade statistics at a third frequency given similar type statistics at two other frequencies. Although a specific data base was used pertaining to the climatology at Wallops Island, the techniques developed are general and may be applied to existing or future "fade measurements" at other climatological locations.     

Determination of the Parameters of Tunneling Barriers of Superconducting Tunnel Structures for Submillimeter Receivers

Journal of Communications Technology and Electronics - Abstract—The parameters of the tunneling barrier of Nb/Al–AlOx/Nb Josephson junctions were estimated in a wide range of current...     

隧道结TiOx线宽度对隧穿现象的影响

在新型超高速光导开关的研究中,采用AFM阳极氧化加工方法,加工利用磁控溅射方法在GaAs衬底得到的厚约3nm的钛膜,形成纳米级氧化钛线.该Ti-TiOx-Ti形成MIM隧道结作为光导开关的基本结构,并且TiO x作为电子的能量势垒.为说明氧化线的宽度对隧穿现象的影响,确定加工超高速光导开关时不引起隧穿的最窄线宽及其实验条件,通过控制空气中的相对湿度,在加工速度、氧气浓度和偏置电压不变的条件下,加工出宽度分别为15.6,34.2和46.9nm的钛氧化线,测试了不同宽度氧化线隧道结的I-V特性.结果表明,在两电极的偏压为6V时不引起隧穿的前提下,可以在超高速光导开关两电极间加工最小宽度大约为10nm的氧化钛线.     

隧道结TiOx线宽度对隧穿现象的影响

在新型超高速光导开关的研究中,采用AFM阳极氧化加工方法,加工利用磁控溅射方法在GaAs衬底得到的厚约3nm的钛膜,形成纳米级氧化钛线.该Ti-TiOx-Ti形成MIM隧道结作为光导开关的基本结构,并且TiO x作为电子的能量势垒.为说明氧化线的宽度对隧穿现象的影响,确定加工超高速光导开关时不引起隧穿的最窄线宽及其实验条件,通过控制空气中的相对湿度,在加工速度、氧气浓度和偏置电压不变的条件下,加工出宽度分别为15.6,34.2和46.9nm的钛氧化线,测试了不同宽度氧化线隧道结的I-V特性.结果表明,在两电极的偏压为6V时不引起隧穿的前提下,可以在超高速光导开关两电极间加工最小宽度大约为10nm的氧化钛线.