Physical properties of La-doped NiO sprayed thin films for optoelectronic and sensor applications

Lanthanum-doped nickel oxide NiO:La thin films were deposited onto glass substrates at 450 °C, by the spray pyrolysis technique using nickel and lanthanum chlorides as precursors. These films belonging to cubic structure, crystallize preferentially along (111) plane. First, Raman study shows the presence of bands corresponding to NiO structure. The same study confirms the presence of both Ni(OH)₂ and LaNiO₃ as secondary phases. Moreover, using SEM observations, all samples exhibit porous microstructures with rough surfaces and spherical nanoparticles of about 40 nm as size. Second, NiO:La films present a direct band gap energy value lying in the range of 3.63–3.84 eV. Also, the effect of the La incorporation in NiO matrix on the disorder is studied in terms of Urbach energy. Some optical constants (refractive index, extinction coefficient, dielectric constants, and dispersion parameters) are reached. On the other hand, the photoluminescence spectroscopy reveals the presence of peaks related to the electronic transition of the Ni²⁺ ions and others confirming the presence of some defects in NiO matrix in terms of La content. Finally, it has been found that La doping allows the improvement of the electrical conductivity as well as Haacke’s figure of merit of NiO sprayed thin films by at least, three orders of magnitude.     

Al3+ doping induced changes of structural,morphology, photoluminescence,optical and electrical properties of SnO2 thin films as alternative TCO for optoelectronic applications

Highly transparent and conductive pure (SnO₂) and aluminum doped tin oxide (Al:SnO₂) thin films were deposited on glass substrates by the sol-gel spin-coating method. The structural, morphological, optical and electrical properties of the prepared thin films at different doping rates have been studied. X-ray diffraction results revealed that all the films were polycrystalline in nature with a tetragonal rutile structure. SEM images of the analyzed films showed a homogeneous surface morphology, composed of nanocrystalline grains. The EDS results confirmed the presence of Sn and O elements in pure SnO₂ and Sn, O, Al in doped SnO₂ thin films. The optical results revealed a high transmittance greater than 85% in the visible and near infrared and a band gap varying between 3.82 and 3.89 eV. PL spectra at room temperature showed that the most dominant defects correspond to oxygen vacancies. A low resistivity of order varying between 10^?3 and 10^?4 Ω cm and a high figure of merits ranging between 10^?3 and 10^?2 Ω^?1 in the visible range were obtained. The best performances were obtained for samples containing 2 at. % Al, which could be used as an alternative TCO layer for future optoelectronic devices.     

Improved optical and structural properties of cadmium sulfide nanostructures for optoelectronic applications

In this study, the effect of ZnO seed layer on the growth of uniform CdS nanostructures was investigated using chemical bath deposition technique. Besides, the influence of molar concentration of reagents on the surface morphology, structural and optoelectrical properties of the deposited CdS thin films were examined. The CdS nanostructures were grown on bare glass and ZnO/glass substrates with different reagent molar concentrations. The results indicated an improvement in the homogeneity and uniformity of the grown CdS nanostructures on ZnO seed layer which can be due to the low lattice mismatch between ZnO and CdS structures. The CdS/ZnO samples were optimized by changing the molar concentration of reagents. A three–dimensional intersecting vertical nanosheet morphology with hexagonal structure was obtained when modified chemical concentration of 0.5 M was applied. The XRD pattern of CdS nanosheets indicated the hexagonal phase of CdS which were strongly orientated along (002) plane. The elevated intensity of dominant peak related to this sample confirmed the improved crystal quality of this CdS nanostructure comparing to the other samples. The UV–Vis spectrum demonstrated a high absorption coefficient for CdS intersecting nanosheets which might be due to the high specific surface area and light trapping behavior of this sample. The photoluminescence study also showed an improvement in optical properties of optimized CdS nanostructures. In order to study the optoelectrical properties of CdS nanostructures, metal–semiconductor–metal photodetectors were fabricated with different CdS samples and their current–voltage characteristics were analyzed. The results indicated an enhancement in photosensitivity, responsivity, and speed of photodetectors based on optimized CdS nanostructures.     

Enhanced conductance properties of UV laser/RTA annealed Al-doped ZnO thin films

Thin films comprising 0.5 mol% aluminum-doped zinc oxide (AZO) were prepared on glass substrates by a spin-coating method for transparent conducting oxide (TCO) applications. UV laser was selected for the annealing of AZO thin films, due to the well matched energy bandgap between UV laser and AZO films. After the rapid thermal annealing (RTA) process, post UV laser annealing was carried out by varying the scan speed of the laser beam, and the effects of laser annealing on the structural, morphological, electrical, and optical properties were analyzed. The results indicated that UV laser annealing based on various scan speeds affects the microstructure, sheet resistance, and optical transmittance of the AZO thin films, compared with those of the only RTA processed thin films. X-ray diffraction (XRD) analysis showed that all films that preferentially grew normally on the substrate had a (002) peak. The optical transmittance spectra of the laser/RTA annealed AZO thin films exhibited greater than 83% transmittance in the visible region. Also, the sheet resistance (1.61 kΩ/sq) indicated that optimized UV laser annealing after the RTA process improves film conductance.     

Growth and properties of Cu3SbS4 thin films prepared by a two-stage process for solar cell applications

Cu₃SbS₄ is a promising material for thin film heterojunction solar cells owing to its suitable optical and electrical properties. In this paper, we report the preparation of Cu₃SbS₄ thin films by annealing the Sb₂S₃/CuS stacks, produced by chemical bath deposition, in a graphite box held at different temperatures. The influence of annealing temperature on the growth and properties of these films is investigated. These films are systematically analyzed by evaluating their structural, microstructural, optical and electrical properties using suitable characterization techniques. X-ray diffraction analysis showed that these films exhibit tetragonal crystal structure with the lattice parameters a=0.537 nm and b=1.087 nm. Their crystallite size increases with increasing annealing temperature of the stacks. Raman spectroscopy analysis of these films exhibited modes at 132, 247, 273, 317, 344, 358 and 635 cm⁻¹ due to Cu₃SbS₄ phase. X-ray photoelectron spectroscopy analysis revealed that the films prepared by annealing the stack at 350 °C exhibit a Cu-poor and Sb-rich composition with +1, +5 and −2 oxidation states of Cu, Sb and S, respectively. Morphological studies showed an improvement in the grain size of the films on increasing the annealing temperature. The direct optical band gap of these films was in the range of 0.82–0.85 eV. Hall measurements showed that the films are p-type in nature and their electrical resistivity, hole mobility and hole concentration are in the ranges of 0.14–1.20 Ω-cm, 0.05–2.11 cm² V⁻¹ s⁻¹ and 9.4×10²⁰–1.4×10¹⁹ cm⁻³, respectively. These structural, morphological, optical and electrical properties suggest that Cu₃SbS₄ could be used as an absorber layer for bottom cell in multi-junction solar cells.     

Pulsed electrodeposition of (Bi1-xSbx)2Te3 thermoelectric thin films

(Bi_1-xSb_x)₂Te₃ thermoelectric thin films were deposited on stainless steel discs in 1 M perchloric acid and 0.1 M tartaric acid by pulse electrodeposition in order to optimize the grain growth. The influence of the electrolyte composition, the cathodic current density and the cathodic pulse time on film stoichiometry were studied. The results show that it is necessary to increase the Sb content in the electrolyte to obtain the (Bi_0.25Sb_0.75)₂Te₃ film stoichiometry. Pulse plating reduced the grain size and the roughness, compared with continuous plating. Thermoelectric and electrical properties were also studied and it was found that the Seebeck coefficient and electrical resistivity were related to two parameters: the cathodic pulse current density and the films thickness.     

Band structure and thermoelectric properties of inkjet printed ZnO and ZnFe2O4 thin films

The band structure and thermoelectric properties of inkjet printed ZnO and ZnFe₂O₄ thin films have been investigated. The bulk pellets were prepared by a solid-state method and thin films were deposited using an inkjet printing method. Multiple print cycles were required to fabricate homogeneous films and the composition of the thin films can be varied by varying the relative amounts of liquid deposited. It was possible to obtain high thermoelectric properties of ZnO by controlling the ratios of dopant added and the temperature of the heat treatments. XRD analysis showed that the fabricated samples have a wurtzite structure and an additional ZnAl₂O₄ phase was formed with increasing Al content and sintering temperature. It was found that the band gap of Al doped ZnO becomes smaller with increasing Al content and thus the electrical conductivity of Al_x doped ZnO (x=0.04) thin films showed the highest electrical conductivity (114.10 S/cm). The ZnFe₂O₄ samples were compared against the ZnO samples. The formation of single phase cubic spinel structure of the sintered ZnFe₂O₄ samples was found and confirmed by X-ray diffraction technique. Secondary phase Fe₂O₃ was also detected for compositions with Zn (x≤0.4). Finally, we want to report that the electrical conductivity of Zn_xFe_3−xO₄ was lower than the conductivity of the Al-doped ZnO.     

Ga-doped IZO films obtained by magnetron sputtering as transparent conductors for visible and solar applications

C-axis textured thin films of gallium-doped indium zinc oxide (GIZO) with a 2% ratio of Ga/Zn, were obtained via RF-magnetron sputtering with high transparency and electrical conductivity. A Box-Behnken response surface design was used to evaluate the effects of the deposition parameters (In₂O₃ target power, deposition time, and substrate temperature) on the chemical composition, optical, electrical, and structural properties of the GIZO films. The optical constants and the electrical properties were obtained using optical models. The GIZO stoichiometry, and therefore the In/Zn atomic ratio, affected the crystallinity, crystalline parameters, band gap, and charge carrier mobility of the GIZO films. The charge carrier density was related to the change in the crystalline parameters of the hexagonal structure and the In/Zn atomic ratio. The best electrical conductivity values (1.75?×?10³ Ω^?1 cm^?1) were obtained for GIZO films with In/Zn ratio ≥?1. Several figures of merit (FOM) defined for the visible and solar regions were comparatively used to select the optimal In/Zn atomic ratio that provided the best balance between the conductivity and the transparency. The optimal In/Zn ratio was in a range of 0.85–0.90 for the GIZO films.     

Carbon black thin films with tunable resistance and optical transparency

Layer-by-layer assembly was used to produce highly conductive thin films of carbon black and polymer. Positively and negatively-charged polyelectrolytes, polyethylenimine (PEI) and poly(acrylic acid) (PAA), were used to stabilize carbon black in aqueous mixtures that were then deposited onto a PET substrate. The effects of sonication and pH adjustment of deposition mixtures on the conductivity and transparency of deposited films was studied, along with drying temperature. Sonication and oven drying at 70 °C produced films with the lowest sheet resistance (∼1500 Ω/sq), which is a bulk resistivity below 0.2 Ω cm for a 14-bilayer film that is 1.3 μm thick. These two variables improve packing and connectivity amongst carbon black particles that results in increased electrical conductivity. Increasing the pH of the PAA-stabilized mixture and decreasing the pH of the PEI-stabilized mixture resulted in transparent films due to increased polymer charge density. These pH-adjusted films have much higher sheet resistance values than their non-adjusted counterparts due to their reduced thickness and patchy deposition. Varying the number of bilayers allows both sheet resistance and optical transparency to be tailored over a broad range. Carbon black-filled thin films able to achieve these levels of resistivity and transparency may find application in a variety of optoelectronic applications.     

Influence of annealing atmosphere on the structure, resistivity and transmittance of InZnO thin films

Dependence of the electrical and optical properties of In₂O₃–10 wt% ZnO (IZO) thin films deposited on glass substrates by RF magnetron sputtering on the annealing atmosphere was investigated. The electrical resistivities of indium zinc oxide (IZO) thin films deposited on glass substrate can be effectively decreased by annealing in an N₂ + 10% H₂ atmosphere. Higher temperature (200 °C) annealing is more effective in decreasing the electrical resistivity than lower temperature (100 °C) annealing. The lowest resistivity of 6.2 × 10⁻⁴ Ω cm was obtained by annealing at 200 °C in an N₂ + 10% H₂ atmosphere. In contrast, the resistivity was increased by annealing in an oxygen atmosphere. The transmittance of IZO films is improved by annealing regardless of the annealing temperature.     

Effect of Sb addition on SbxSn1-xS thin films: The structural,morphological, and linear/nonlinear optical changes for optoelectronic applications

The current paper reports the changes in the structural and optical properties of antimony-doped tin sulfide ternary (Sb_xSn_1-xS) (x = 0, 0.05, 0.1, 0.15, 0.2) thin films synthesized by the thermal evaporation technique on a glass substrate. Structural characterization techniques such as X-ray diffraction and Raman spectroscopy of the prepared sample revealed that the thin films are crystalline in nature. The nanoflake-like structure was found from the surface morphological analysis performed by field emission scanning electron microscopy. The concentration of the compositional elements was confirmed from the energy dispersive X-ray analysis. The linear and nonlinear optical parameters were calculated by using the transmission data obtained from UV–vis spectroscopy in the range of 800–1100 nm. The optical measurements showed an increase in transmittance and shifting of the absorption edge. The optical bandgap increased (1.239–1.378 eV) and the refractive index decreased with the increase of Sb concentration, satisfying the Moss rule. The nonlinear susceptibility and the nonlinear refractive index (n₂) decreased with Sb content. The changes in both linear and nonlinear parameters by varying the antimony doping concentration could be helpful for controlling the optical properties of Sb_xSn_1-xS thin films and could be a suitable candidate for many photonics and optoelectronic applications.     

Room temperature deposition of XRD-amorphous TiO2 thin films: Investigation of device performance as a function of temperature

In this study, TiO₂ thin films were fabricated by radio frequency sputtering at room temperature in pure Ar atmosphere starting from a 6?in. TiO₂ target. The thickness of the films was controlled by deposition time and the effect of Ar sputtering pressure on the characteristics of TiO₂ thin films was evaluated. Surface morphology and optical properties of TiO₂ films were investigated using X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and UV–Vis spectrophotometry. Also, the refractive index and extinction coefficient of films were inferred by fitting spectrophotometric data. Schottky diode were fabricated by evaporation of Ni on TiO₂ films. Current-voltage (I-V) measurements of Ni/TiO₂ films showed that the rectifying properties of the device improves with the increasing of TiO₂ film density and thickness. Therefore, the best I-V characteristic of the device was investigated depending on the temperature. Also, Ni/n-TiO₂/p-Si/Al devices were fabricated to understand their transport mechanism.     

Nanostructured SnO2 thin films for NO2 gas sensing applications

We report the synthesis of nanostructured SnO₂ by a simple inexpensive sol–gel spin coating method using m-cresol as a solvent. This method facilitates rapid synthesis at comparatively lower temperature enabling formation of nanostructures suitable for gas-sensing applications. Various physicochemical techniques have been used for the characterization of SnO₂ thin films. X-ray diffraction analysis confirmed the single-phase formation of tetragonal SnO₂ having crystallite size 5–10 nm. SnO₂ showed highest response (19%) with 77.90% stability toward 100 ppm nitrogen dioxide (NO₂) at 200 °C. The response time of 7 s and recovery time of 20 min were also observed with the same operating parameters. The probable mechanism is proposed to explain the selective response toward nitrogen dioxide. Impedance spectroscopy studies showed that the response to nitrogen dioxide is mainly contributed by grain boundaries. The reproducibility and stability study of SnO₂ sensor confirmed its candidature for detection of NO₂ gas at low concentration (10–100 ppm) and lower operating temperature.     

Flexible thin films based on poly(ester imide) materials for optoelectronic applications

A series of high-performance poly(ester imide)s bearing cycloaliphatic moieties was manufactured by a two-step procedure via solution polycondensation of an aromatic–aliphatic dianhydride containing preformed ester units and cyclohexanone ring in the main chain, with various aromatic diamines. The new dianhydride monomer, namely 2-oxocyclohexane-1,3-bis[4,4′-bis(trimellitate)benzylidene] dianhydride, was synthesized by the reaction between 2,6-bis(4-hydroxybenzylidene)cyclohexanone and trimellitic anhydride chloride. The chemical structure of the resulting dianhydride was confirmed by means of Fourier transform infrared, ¹H NMR and ¹³C NMR spectroscopies. The poly(ester imide)s from the series exhibited water uptake capacity in the range 3.45–10.09%. The onset temperatures, corresponding to the first detected thermal weight loss in the samples, ranged from 367 to 441 °C. Besides the cycloaliphatic moieties coming from the dianhydride monomer, the other aliphatic segments present in the diamine structures were responsible for improved optical performance in the resulting poly(ester imide)s, the transmittance being higher than 80% at 684 nm. © 2021 Society of Industrial Chemistry.     

Dielectric and electrical properties of La@NiO SNPs for high-performance optoelectronic applications

A successful flash combustion synthesis of NiO spherical nanoparticles with various contents of lanthanum (La) doping (La@NiO SNPs) with remarkably enhanced dielectric and electrical properties are reported. Single phase has been confirmed through X-ray diffraction and FT-Raman spectroscopic analysis. Increasing La content in NiO reduced the crystallite size by 341% to 6.65 nm from 22.70 nm. The composition of elements in the final product was assessed via EDX analysis. Moreover, monophasic La@NiO SNPs synthesis with size reduction was observed using field emission scanning electron microscopy (FESEM). A red shift in optical energy gaps (3.52–3.26 eV) was observed with increasing La contents from pure to 10 wt%. Capacitance (109–964 PF), impedance (9.41 × 10⁴–1.67 × 10⁴ kΩ), dielectric constant (100–967), dielectric loss (335–10666), and electrical conductivity (4–5 S/m) values were remarkably improved with La doping. The current (I)–voltage (V) characteristics of pure and La@NiO NPs were performed under the biased voltage of ±20 V. Current was noticed in the range of (3.81 × 10^?4–9.91 × 10^?3 amp) at pure, 1.0, 3.0, 5.0, and 10 wt% of La@NiO NPs. Enhancements in the dielectric and electrical properties of as-synthesized NPs make them suitable for optoelectronics uses.     

Influence of the selenization time on the properties of (Na0.1Cu0.9)2ZnSn(S,Se)4 thin films and their photovoltaic solar cells

(Na_0.1Cu_0.9)₂ZnSn(S,Se)₄ thin films with a single kesterite phase were synthesized using a sol-gel spin-coating method accompanied by rapid post-annealing. In this study, we investigated the effect of selenization time on the crystal quality and photoelectric performance of the (Na_0.1Cu_0.9)₂ZnSn(S,Se)₄ films. It was found that the crystallinity and morphology of the films was enhanced, and some of bigger Se substituted for the S site in (Na_0.1Cu_0.9)₂ZnSn(S,Se)₄ with increasing the selenization time. The bandgap of the film can be regulated from 1.04 eV to 0.99 eV by varying the selenization time. In addition, all films showed p-type conductive characteristics, and films with optimal electrical performance could be obtained by optimizing the selenization time. Finally, the (Na_0.1Cu_0.9)₂ZnSn(S,Se)₄ thin film with the best crystal quality and optical-electrical characteristics was obtained at an optimized selenization time of 15 min. A high power conversion efficiency (PCE) of 3.92% was obtained for the (Na_0.1Cu_0.9)₂ZnSn(S,Se)₄ device, which is 42% higher compared to that of the undoped Cu₂ZnSn(S,Se)₄ (CZTSSe) device.     

Structural and thermal studies of silver nanoparticles and electrical transport study of their thin films

This work reports the preparation and characterization of silver nanoparticles synthesized through wet chemical solution method and of silver films deposited by dip-coating method. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), field emission transmission electron microscopy (FETEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), and energy dispersive spectroscopy (EDX) have been used to characterize the prepared silver nanoparticles and thin film. The morphology and crystal structure of silver nanoparticles have been determined by FESEM, HRTEM, and FETEM. The average grain size of silver nanoparticles is found to be 17.5 nm. The peaks in XRD pattern are in good agreement with that of face-centered-cubic form of metallic silver. TGA/DTA results confirmed the weight loss and the exothermic reaction due to desorption of chemisorbed water. The temperature dependence of resistivity of silver thin film, determined in the temperature range of 100-300 K, exhibit semiconducting behavior of the sample. The sample shows the activated variable range hopping in the localized states near the Fermi level.     

Highly conducting and transparent antimony doped tin oxide thin films: the role of sputtering power density

Sb doped SnO₂ thin films were deposited on quartz substrates by magnetron sputtering at 600 °C and the effects of sputtering power density on the preferential orientation, structural, surface morphological, optical and electrical properties had been studied. The XRD analyses confirm the formation of cassiterite tetragonal structure and the presence of preferential orientation in (2 1 1) direction for tin oxygen thin films. The dislocation density analyses reveal that the generated defects can be suppressed by the appropriate sputtering power density in the SnO₂ lattice. The studies of surface morphologies show that grain sizes and surface roughness are remarkably affected by the sputtering power density. The resistivity of Sb doped SnO₂ thin films gradually decreases as increasing the sputtering power density, reaches a minimum value of 8.23×10⁻⁴ Ω cm at 7.65/cm² and starts increasing thereafter. The possible mechanisms for the change in resistivity are proposed. The average transmittances are more than 83% in the visible region (380–780 nm) for all the thin films, the optical band gaps are above 4.1 eV. And the mechanisms of the variation of optical properties at different sputtering power densities are addressed.     

Influence of ZnO buffer layer thickness on the electrical and optical properties of indium zinc oxide thin films deposited on PET substrates

The influence of the ZnO buffer layer thickness on the electrical and optical properties of In₂O₃–10 wt.% ZnO and ZnO bilayers deposited on polyethylene terephthalate (PET) substrates by RF magnetron sputtering were investigated. The optimum ZnO buffer layer thickness was found to be 90 nm which gives the lowest electrical resistivity of the bilayer of IZO and ZnO deposited on the PET substrate. The surface roughness decreases and diffusion of moisture and gas is more efficiently restrained, which contributes to lower the resistivity of the bilayer as the ZnO buffer layer thickness is increased. On the other hand, the total resistivity of the bilayer increases as the ZnO buffer layer thickness is increased because the resistivity of ZnO is higher than that of IZO. Introduction of a ZnO buffer layer does not nearly affect the IZO/ZnO/PET sample.