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1.
Nb doping effects on crystalline structure, transport transition and magnetic properties are investigated for V1-xNbxO2 (0 x 5%) bulks. At room temperature, doping does not change structure of monoclinic phase but causes an increase in lattice parameters for the range of x 3%, further doping leads to a structure transition to rutile tetragonal phase. Each sample simultaneously displays a transition to insulating behavior and a sharp decrease in susceptibility below an almost same critical temperature (Tc). The Tc is shown to shift from ~ 340 K at x = 0 to ~ 277 K at x = 5% at a rate of ~ ?13 K/at%. It is argued that the observed sharp decrease in susceptibility originates from the formation of V-V dimers with spins in anti-parallel, while the insulating behavior below Tc is due to the electron movement from one dimerized state to another with the help of Variable-Range-Hopping mechanism. Furthermore, it is proposed that doping by larger cations, which would suppress the formation of dimers, can be used to manipulate the metal-insulator transition to lower temperatures.  相似文献   

2.
    
《Ceramics International》2021,47(18):25832-25838
We report on the synthesis and structure of ‘V’ shape twinned vanadium dioxide (VO2) nanocrystals epitaxially grown on c-plane sapphire substrates using a vapor transport method. The (100)M twin plane played a key role in determining the morphology of VO2 nanocrystals. The growth of VO2 nanocrystals begins at the twin plane and proceeds toward two possible monoclinic [100] (aM−axis) direction resulting in ‘V’ shape twinned crystals with the angle between the sides of approximately 115.4°. At a relatively low growth temperature of 900 °C, the growth of the sides of ‘V’ was limited producing ‘coffee-bean’ shape crystals in which flat crystal facet regions are connected with rounded edges. The twinned VO2 nanocrystals were epitaxial to the c-plane sapphire substrate with the monoclinic [010] (bM−axis) normal to the substrate. In the in-plane direction, the (001)M planes of the VO2 twin crystals were aligned to the direction ±2.3° away from the sapphire (1120) plane. The sides of ‘V’ exhibit a rectangular cross-section truncated by the substrate. In-situ synchrotron x-ray diffraction measurement across the metal-insulator transition of the twinned nanocrystals implies that the phase transition of the coffee-bean shape nanocrystals occurs at a lower temperature with a smaller hysteresis gap than the fully grown V-shape nanocrystals.  相似文献   

3.
    
《Ceramics International》2021,47(19):27479-27486
Threshold switching (TS) devices have evolved as one of the most promising elements in memory circuit due to their important significance in suppressing crosstalk current in the crisscross array structure. However, the issue of high threshold voltage (Vth) and low stability still restricts their potential applications. Herein, the vanadium oxide (VOx) films deposited by the pulsed laser deposition (PLD) method are adopted as the switching layer to construct the TS devices. The TS devices with Pt/VOx/Pt/PI structure exhibit non-polar, electroforming-free, and volatile TS characteristics with an ultralow Vth (+0.48 V/−0.48 V). Besides that, the TS devices also demonstrates high stability, without obviously performance degradations after 350 cycles of endurance measurements. Additionally, the transition mechanism is mainly attributed to the synergistic effect of metal-insulator transition of VO2 and oxygen vacancies. Furthermore, the nonvolatile bipolar resistance switching behaviors can be obtained by changing oxygen pressure during the deposition process for switching films. This work demonstrates that vanadium oxide film is a good candidate as switching layer for applications in the TS devices and opens an avenue for future electronics.  相似文献   

4.
《Ceramics International》2021,47(20):28790-28796
Elemental doping is the main means to regulate the phase transition of vanadium oxide (VO2); however, the effects of low valence elemental (<4+) doping on the phase transition of VO2 are still controversial. In the present work, Ni-doped VO2 films were prepared on quartz glass by direct current reactive magnetron sputtering and subsequent annealing. With the increase of the Ni doping content, the phase transition temperature of heating (TH) of the VO2 films decreased from 73.4 °C to 52.4 °C. The temperature required for the occurrence of phase transition (Tb) was lower than TMIT. Different from the undoped VO2 film, the Ni-doped VO2 films had a Tb of around 30 °C. XRD and Raman results revealed that some rutile VO2 microcrystals appeared in the vanadium oxide films because of the lattice distortion by incorporated Ni. Hence, rutile VO2 micro-crystallinities significantly facilitated the phase transition of monoclinic VO2 to rutile one.  相似文献   

5.
    
《Ceramics International》2020,46(4):4786-4794
Vanadium dioxide (VO2) is considered to be a promising candidate for energy-efficient smart windows because of its special reversible Metal-Insulator Transition (MIT) near the ambient temperature. However, its use is constrained by its high transition temperature (TC) relative to the room temperature. In this paper, VO2 doped by boron, could achieve an outstanding metal-insulator phase transition property with a low TC (28.1 °C) close to the room temperature. This enhancement strongly contributes to the studies of the VO2-based smart windows. A limit doping level of around 9.0 at% is observed for the boron-doped VO2. Moreover, the particle size is getting smaller and more uniform and the particle distribution becomes more equal and compact with the continued increase in the doping content. Such uniform grain size and grain boundary conditions suppress the extension of the hysteresis loop (ΔT decreases from 25 °C to 7 °C). In addition, the TC first declines with the increase in the boron content and it starts to increase after reaching its minima of 28.1 °C at 6.0 at% doping level. This feature is the consequence of the competition between the inhibition on the phase transition caused by the V5+ and the promotion on the phase transition caused by the heterogeneous defect-nucleation sites. VO2 doped with 6.0 at% boron exhibits a favorable thermochromic performance with ΔTsol of 12.5% and Tlum up to 54.3%, which is promising for the smart windows.  相似文献   

6.
热红外隐身材料的发展状况   总被引:4,自引:0,他引:4  
简要介绍了红外隐身材料的隐身原理,综述了目前红外隐身材料的种类及研究现状,分析了近年来开始研究的红外—微波复合隐身材料,最后指出了红外隐身材料的发展方向。  相似文献   

7.
    
《Ceramics International》2020,46(12):19738-19742
LaCrO3 shows excellent thermal stability and good emissivity, and can be used as a potential thermal protection material for hypersonic vehicle. In this study, LaCrO3 and Ca2+-Sr2+ doped LaCrO3 were prepared by solid state reaction at 1400 °C for 2 h. The microstructures of the samples and effects of Ca2+-Sr2+ doping on the infrared emissivity of LaCrO3 were studied by XRD, XPS, FT-IR, and UV–VIS–NIR spectrophotometer. The results show that after doping Ca2+ and Sr2+ ions, the infrared emissivity of all samples has significantly improved at 2.5–10 μm, from 0.61 (minimum value) to above 0.90. In the range of 10–14 μm, the emissivity of pure LaCrO3 and La0.8CaxSr0.2-xCrO3 samples shows a similar trend and all remains above 0.97. Therefore, doping Ca2+ and Sr2+ can significantly increase the emissivity of LaCrO3 at 2.5–10 μm, which makes it have a wider application prospect in the field of high temperature thermal protection.  相似文献   

8.
红外隐身涂料研究进展   总被引:10,自引:0,他引:10  
简单介绍了红外隐身涂料的主要组成,综述了红外隐身涂料的研究及发展现状,提出了红外隐身涂料的发展方向。  相似文献   

9.
现代战争中,随着红外探测制导技术的迅猛发展,武器装备的生存环境愈发严峻,如何提高武器装备的红外隐身能力成为亟待解决的问题,而红外隐身材料是提升武器装备红外隐身能力的关键。本文简要分析了红外隐身材料的隐身机理,总结了近年来红外低发射率材料、控温材料、光子晶体、智能隐身材料、红外低发射率纳米材料等红外隐身材料的研究现状,展望了红外隐身材料未来的发展趋势。  相似文献   

10.
We have proposed a method to probe metal to insulator transition in VO2 measuring photoluminescence response of colloidal quantum dots deposited on the VO2 film. In addition to linear luminescence intensity decrease with temperature that is well known for quantum dots, temperature ranges with enhanced photoluminescence changes have been found during phase transition in the oxide. Corresponding temperature derived from luminescence dependence on temperature closely correlates with that from resistance measurement during heating. The supporting reflectance data point out that photoluminescence response mimics a reflectance change in VO2 across metal to insulator transition. Time-resolved photoluminescence study did not reveal any significant change of luminescence lifetime of deposited quantum dots under metal to insulator transition. It is a strong argument in favor of the proposed explanation based on the reflectance data.

PACS

71.30. + h; 73.21.La; 78.47.jd  相似文献   

11.
    
《Ceramics International》2022,48(18):26003-26012
In this study, a high-entropy RMgAl11O19 (HE-RMA, R = La, Pr, Nd, Sm, Gd) and LaMgAl11O19 (LMA) coatings were fabricated by atmospheric plasma spraying. The phase composition, microstructure, thermal stability, infrared emissivity performance and shock resistance were comparatively characterized. The results showed that doping multiple rare-earth cations could be conductive to enhance the infrared emissivity. The as-sprayed HE-RMA coating exhibited the highest infrared emissivity, which reached up to 0.971 at 1000 °C. The reason for the improvement of the infrared emissivity was attributed to introduced impurity energy level resulting from doping cations, which could reduce the forbidden bandwidth and increase probability of electronic transition. Meanwhile, HE-RMA coating exhibited better shock resistance at 1100 °C due to superior fracture toughness (1.84 ± 0.41 MPa·m1/2) during thermal cycling test at 1100 °C. In addition, HE-RMA coating still exhibited high infrared emissivity (0.932 at 1000 °C) at 1100 °C annealing for 100 h with only a slight reduction.  相似文献   

12.
This paper reports the synthesis of different particle size La0.7Sr0.3MnO3 (LSMO) nanoparticles using non-aqueous sol gel synthesis route by calcination at temperatures 750 °C, 850 °C and 950 °C. In the present work, the effect of particle size of LSMO nanoparticles on its structural, magnetic and transport properties has been studied in detail. The X-ray diffraction analysis confirms the formation of LSMO nanoparticles having rhombohedral (R3?c) structure with average particle size of 20 nm, 22.5 nm and 25.6 nm. An increase in magnetization and decrease in coercivity with increase in particle size is attributed to the magnetically disordered surface layer. The bifurcation in ZFC-FC magnetization indicates the possibility of spin glass like behavior of the LSMO nanoparticles. The effect of particle size on the resistivity and magnetoresistance were studied by using different conduction mechanism for different temperature regions. The upturn in the ρ-T curve at lower temperatures was explained by using Kondo-like transport mechanism. The maximum LFMR achieved was 32.3% at a field of 1 T at 10 K for 20 nm LSMO nanoparticle.  相似文献   

13.
红外隐身涂料黏合剂的应用与研究   总被引:3,自引:0,他引:3  
简要介绍了红外隐身涂料的隐身原理;综述了目前红外隐身涂料树脂的种类及研究现状;指出了红外隐身涂料的发展方向。  相似文献   

14.
以自制的水性粘合剂制备了一种热红外伪装涂料,刷涂于载体上,制得热红外伪装涂层.研究了载体的种类和涂层增质量率对涂层红外发射率的影响,并研究了涂层增质量率对涂层透湿、耐磨和耐有机溶剂等性能的影响.研究结果表明:选用涤纶布为涂层载体,当涂层增质量率为30%时,制备的织物涂层具有良好的透湿性、耐摩擦性和耐有机溶剂腐蚀性,此时涂层的红外发射率为0.61,满足作为热红外伪装织物的基本要求.  相似文献   

15.
低发射率红外隐身涂料研究进展   总被引:2,自引:0,他引:2  
简介红外隐身涂料的隐身原理,重点探讨构成低发射率红外隐身涂料的颜料、黏合剂及隐身涂料红外性能的各种因素,结合国内外研究进展状况,对低发射率红外隐身涂料的后续研究提出了基本设想。  相似文献   

16.
    
《Ceramics International》2020,46(2):1569-1576
The low infrared emissivity materials with good high-temperature properties remain a challenge for the infrared stealth of hot targets in 3–5 μm waveband. To further decrease the infrared emissivity of ZnO, the Ce-doped ZnO nanoparticles were prepared by a facile sol-gel method and the infrared emissivity properties in 3~5 μm waveband in high temperature conditions were deeply investigated by doping different concentration of Ce in ZnO. The influences of Ce dopant concentration on the microstructure, morphology, conductivity, lattice vibration and high-temperature infrared emissivity properties of Ce-doped ZnO were systematically studied, as well as the detailed analysis of temperature-dependent infrared emissivity properties through the conductivity and lattice vibration based on the theory of solid state physics. When the Ce dopant concentration is 3%, the infrared emissivity of Ce-doped ZnO decreases dramatically from room temperature to 800 °C in comparison with undoped ZnO and reaches the lowest value of 0.329 at 500 °C. It is indicated that the excess doping of Ce would produce an impurity phase of CeO2 in the crystal, therefore decreases the conductivity, and causes extra lattice vibration in infrared region, and results in the increase of infrared emissivity. The infrared emissivity versus temperature exhibits a “U” type curve, which is caused by the competition effects of the conductivity and lattice vibration at elevated temperature.  相似文献   

17.
    
《Ceramics International》2019,45(10):13004-13010
In this study, the REO-HfO2 (REO = Tb4O7, Gd2O3 and Sm2O3) coatings and pure HfO2 coatings were prepared by atmospheric plasma spraying. The chemical compositions, morphologies, infrared radiation performance and thermal resistances of the coatings were systematically investigated. The experimental results showed that the Tb4O7-HfO2, Gd2O3-HfO2, Sm2O3-HfO2 and pure HfO2 coatings had infrared emissivity values of 0.863, 0.852, 0.854 and 0.621, respectively, at room temperature. Based on the phase analysis, the higher infrared emissivity of the REO-HfO2 coatings could be attributed to the fact that the newly formed RE2Hf2O7 (RE = Tb, Gd and Sm) phase, which had a defective fluorite-type structure, and the RE3+ ions enhanced the lattice absorption and electron absorption. Additionally, the Tb4O7-HfO2 coating exhibited a relatively higher infrared emissivity than those of the Gd2O3-HfO2 and Sm2O3-HfO2 coating over the wavelength range of 1–15 μm, which was due to the relatively higher vibrational frequency of the TbO bond in RE2Hf2O7 (RE = Tb, Gd and Sm) and the transformation of Tb3+ into Tb4+ in the Tb4O7-HfO2 system. In addition, the REO-HfO2 ceramic coatings exhibited excellent thermal resistance, which could withstand high-temperature treatment at 1600 °C for at least 50 h without undergoing a phase change and exfoliation, and the infrared emissivity at different temperatures hardly changed after thermal treatment.  相似文献   

18.
《Ceramics International》2021,47(20):28196-28202
(1-x)La0.67Sr0.33MnO3/xMnOδ [(1-x)LSMO/xMnOδ] multicomponent composites were prepared. Their structure and properties were investigated as function of composition. X-ray diffraction and x-ray photoelectron spectroscopy confirmed the coexistence of MnO, Mn2O3 and MnO2. It was found that MnOδ introduction led to decreased average grain size and metal-insulator transition temperature. But it can increase maximum resistivity and magnetoresistance. The corresponding values were 2.0 μm, 370 K, 0.017 Ω cm, −24.7% (10 K, 2 T) for x = 0 and 0.7 μm, 225 K, 1.899 Ω cm and −25.6% (10 K, 2 T) for x = 0.3. However, the ferromagnetic Curie temperature was almost composition-independent with the value of 305 K. These results indicate that forming multicomponent composite by introducing ferromagnetic second phases can suppress the drawbacks of conventional ferromagnetic materials.  相似文献   

19.
Fe-doped ZnO powders have been synthesized by the coprecipitation method at 600 °C with various reaction time, using zinc nitrate as the staring material, urea as the precipitator, and ferric nitrate as the doping source, respectively. The phase and morphology of the prepared powders have been characterized by X-ray diffraction and scanning electron microscopy, respectively. It was found that the prepared product synthesized for 1 h had a pure ZnO wurtzite structure and was a ZnO(Fe) solid solution powder. The real part, imaginary part, and dielectric loss of complex permittivity of prepared powders in the frequency range of 8.2–12.4 GHz decreased with increasing reaction time. The average infrared emissivities of prepared powders at the waveband range of 8–14 μm increased with extending reaction time.  相似文献   

20.
    
N-doped SiC-MoSi2 ceramics were successfully fabricated by hot pressing in N2 using Y(NO3)3.6 H2O as both sintering aids and additional N sources. The impact of Y(NO3)3.6 H2O content on the densification, electrical properties, and infrared emission performance of the resulting ceramics were investigated. The distribution of Y-based sintering aid is improved by melting of Y(NO3)3.6 H2O during slurry drying, enabling the relative density to increase up to 97.4%. Y(NO3)3.6 H2O subsequently decomposes during sintering and allows the substitution of atomic N for the C sites in SiC lattice and production of the N-derived donor level. A larger amount of N dopant elevates the carrier density up to 1.90 × 1016 cm-3. Remarkably, The SiC ? 10 wt% MoSi2 ceramics sintered with 16.9 wt% Y(NO3)3.6 H2O exhibits the lowest electrical resistivity (0.791 Ω·cm at room temperature) and highest infrared emissivity (0.913 at 800 ℃), the latter of which may also be attributed to lattice distortion induced by N doping. This work demonstrates N doping as a prospective strategy for synergistically optimizing the electrical conduction and infrared emission performance of SiC-based ceramics for infrared source applications.  相似文献   

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