共查询到20条相似文献,搜索用时 109 毫秒
1.
在MOPCVD-Ti(CN)膜的沉积过程中,沉积温度是一个重要工艺参数,当沉积温度低时,虽然沉积速率高但膜的硬度低,而当沉积温度高于一定值后,碳化了的金属有机化合物阻止膜的继续生长,由于MOPCVD-Ti(CN)膜是由Ti(CN)是一些有机化合物碎片组成,膜的硬度也低于用于PCVD法制备的Ti(CN)膜,所以用MOPCVD法制备的Ti(CN)膜只能属于一种类Ti(CN)膜。 相似文献
2.
3.
类金刚石碳膜的硬度测定方法研究 总被引:3,自引:0,他引:3
研究了有衬底影响的类金刚石碳(DLC)膜硬度测定技术。采用H-D关系外推、Meyer图计算及J¨onsson-Hogmark公式计算(考虑ISE)等三种方法测定了DLC膜的“真实”硬度。结果表明,由Meyer图计算的薄膜硬度最可靠、简便。通过试验还发现DLC膜有约15%的弹性恢复,并认为DLC膜的硬度测定采用克努普压头更为恰当。 相似文献
4.
本文首先对MAP3.0应用层的MMS协议作了基本介绍,侧重于VMD模型的描述。在简单介绍可编程序控制器(PC)后,对PC入网策略作了研究,以较在篇幅叙述了PC/PC功能到VMD模型的映射,并给出以这种策略为指导的实现例子。最后对PC入网作了总结和展望。 相似文献
5.
激光—等离子体辅助化学气相沉积工艺参数对氮化硅膜显微硬度的影响 总被引:1,自引:0,他引:1
采用一种新的方法-激光-等离子体辅助气相沉积法,在自行研制的LPCVD装置上进行了Sih4-NH3-N2体系沉积Si3N4膜的工艺试验;采用正交试验法选择工艺参数,根据显微硬度评价膜层性能,并找出最佳工艺参数;激光功率密度为328W/cm^2,RF电源功率为50W,氮硅流量比为10。结果表明,激光功率密度对膜层显微硬度的影响最大,RF电源功率的影响次之,氮硅流量比的影响最弱。 相似文献
6.
李刚 《仪表技术与传感器》1993,(6):41-43
本文提出了一种改进包括一个测量范围为10kPa的差压传感器,一个测量范围为6MPa的静压传感器和一个用于智能差压变送器的温度传感器的压阻式多功能传感器性能的方法。可以使静压传感器的输出大于25mV/V/6MPa,并且将差压对静压传感器的影响减小到小于0.35mV/V/10kPa, 相似文献
7.
利用自行研制的新型石英钟罩式微波等离子体化学气相沉积(MPCVD)装置进行轩金刚石薄膜的实验研究。用扫描电子显微镜(SEM)对形貌观察和喇曼谱测试表明,由此装置可以面积较大、晶体良好、杂质少、比较纯净的高质量金刚石薄膜。 相似文献
8.
9.
PREDICTION OF PUMP CHARACTERISTICS ACCORDING TO GEOMETRICAL PARAMETERS OF IMPELLER AND VOLUTE CASING
PREDICTIONOFPUMPCHARACTERISTICSACCORDINGTOGEOMETRICALPARAMETERSOFIMPELLERANDVOLUTECASINGPREDICTIONOFPUMPCHARACTERISTICSACCORD... 相似文献
10.
气相沉积TiN和Ti(C,N)镀层的抗氧化性能 总被引:3,自引:1,他引:2
研究了气相沉积TiN和Ti(C,N)镀层的抗氧化性能,通过SEM观察和XRD相分析,研究分析了氧化腐蚀产物类型,探讨了膜基体系失效机制。结果表明,气相沉积层的抗氧化性能明显优于无镀层的3Cr2W8V试样,尤以PCVD TiN性能最佳,氧化产物为金红石型TiO2。 相似文献
11.
In the present study, high-Tc superconducting thin YBa2Cu3O7 films and polysilicon films were prepared to investigate the initial sliding friction properties using a ball-on-flat tribometer when samples were moved against a sapphire ball or a steel ball in ambient environment. The surface topography was measured with atomic force microscope (AFM). After five times testing, the experimental results indicate that the friction coefficient of YBa2Cu3O7 films is lower than that of polysilicon films when sliding against a sapphire ball and almost the same when sliding against a steel ball. In particular, the initial friction of YBa2Cu3O7 films is more stable when sliding against a sapphire ball. However, the initial friction of polysilicon films fluctuates during a cycle period when sliding against a sapphire ball. They are both stable when sliding against a steel ball. Although, the surface profile of the YBa2Cu3O7 film is rough and can be seen to be rougher than the polysilicon film, but the friction coefficient of the YBa2Cu3O7 film is lower than that of polysilicon film. Also, although the topography of YBa2Cu3O7 films changes during friction, the friction coefficients are stable. This clearly shows that the initial sliding friction of YBa2Cu3O7 films under microfriction is stable. The observation signifies YBCO film is a good film to prevent stick–slip motion in ambient environment. The wear properties of YBa2Cu3O7 films suggest that the superconducting outgrowths (CuO) are loose and they can be easily removed. 相似文献
12.
13.
14.
Jun-Hyub Park Hong-Yeol Bae Yun-Jae Kim 《International Journal of Precision Engineering and Manufacturing》2010,11(5):771-778
This paper reports tensile properties and residual stresses of Ni-Co thin films. To measure elastic (and plastic) properties,
direct tensile tests using dog-bone type specimens are performed first. Assuming that residual stresses vary linearly through
the film thickness, bending and membrane residual stress components are measured using cantilever beam and T-structure beam
specimens, respectively. Averaged values of Young’s modulus, yield strength and tensile strength are found to be about 163GPa,
1,700MPa and 2,000MPa, respectively. The membrane and bending residual stress components are found to be about 825MPa and
47MPa, respectively. 相似文献
15.
微桥结构Ni膜杨氏模量和残余应力研究 总被引:2,自引:0,他引:2
采用MEMS(MicroelectromechanicalSystems)技术研制了镍(Ni)膜微桥结构试样,应用陶瓷压条为承力单元,与纳米压痕仪XP系统的Berkovich三棱锥压头相结合,解决了较宽Ni膜微桥加载问题。测量了微桥载荷与位移的关系,并结合微桥力学理论模型得到了Ni膜微桥的杨氏模量及残余应力,其值分别为190.5GPa和146MPa,与应用纳米压痕仪直接测得的带有Si基底的Ni膜杨氏模量186.8±7.34GPa相吻合。 相似文献
16.
The dynamic shear properties of molecularly-thin films of unfunctionalized and end-functionalized (telechelic) Fomblin-Z perfluoropolyalkylether
(PFPAE) melts with number-average molecular weight M
n≈ 3000−4000 g,mol-1 have been studied at shear rates of 10-2−105 s-1 at normal pressures of 1 and 3 MPa. The shear responses are compared to measurements on end-functionalized polymers of the
same chemical composition but lower molecular weight, M
n≈ 2000 g,mol-1. The predominantly elastic response and high shear moduli of the confined film of unfunctionalized polymer, Fomblin Z03,
suggest that it forms a structure likely to solidify already at low pressure. Its lubricating properties are less favorable
than the ones found for hydroxyl- (DOL) and piperonyl-terminated Fomblin-Z (AM2001, AM3001), where associated molecules form
a structure less prone to solidification under confinement. The thickness of the compressed films of the end-functionalized
polymers increased more strongly with molecular weight than as M
n
0.5
. The shear moduli were found to be larger, the higher the molecular weight, indicating slower relaxations. At a normal pressure
of 3 MPa, these films solidified and displayed stick–slip as seen already at 1 MPa in the Z03 film. The limiting shear stress
of the unfunctionalized Z03, σ > 3 MPa, exceeded by an order of magnitude the limiting shear stress of all of the end-functionalized
polymers. The limiting shear stress of the hydroxyl-terminated polymer was larger than that of the piperonyl-terminated polymer.
This revised version was published online in August 2006 with corrections to the Cover Date. 相似文献
17.
多晶硅纳米薄膜牺牲层压力敏感结构设计 总被引:1,自引:0,他引:1
为使多晶硅纳米薄膜良好的压阻特性在MEMS(微机电系统)压阻传感器中得到有效应用,在设计牺牲层结构压力传感器芯片中探索性地采用了多晶硅纳米薄膜作为应变电阻,并给出这种传感器的设计方法。分析了牺牲层结构弹性膜片的应力分布对传感器灵敏度的影响,优化设计了量程为0~0.2 MPa多晶硅纳米膜压力传感器芯片的结构参数。有限元法仿真结果表明:在保证传感器灵敏度大于50 mV/(MPa.V)的前提下,零点温漂系数可小于1×10-3FS/℃;灵敏度温漂(无电路补偿)可小于1×10-3FS/℃.为高灵敏、低温漂、低成本的高温压力传感器集成化发展提供了一条可行途径。 相似文献
18.
Mechanical characterization of micro/nanoscale structures for MEMS/NEMS applications using nanoindentation techniques 总被引:6,自引:0,他引:6
Mechanical properties of micro/nanoscale structures are needed to design reliable micro/nanoelectromechanical systems (MEMS/NEMS). Micro/nanomechanical characterization of bulk materials of undoped single-crystal silicon and thin films of undoped polysilicon, SiO(2), SiC, Ni-P, and Au have been carried out. Hardness, elastic modulus and scratch resistance of these materials were measured by nanoindentation and microscratching using a nanoindenter. Fracture toughness was measured by indentation using a Vickers indenter. Bending tests were performed on the nanoscale silicon beams, microscale Ni-P and Au beams using a depth-sensing nanoindenter. It is found that the SiC film exhibits higher hardness, elastic modulus and scratch resistance as compared to other materials. In the bending tests, the nanoscale Si beams failed in a brittle manner with a flat fracture surface. The notched Ni-P beam showed linear deformation behavior followed by abrupt failure. The Au beam showed elastic-plastic deformation behavior. FEM simulation can well predict the stress distribution in the beams studied. The nanoindentation, scratch and bending tests used in this study can be satisfactorily used to evaluate the mechanical properties of micro/nanoscale structures for use in MEMS/NEMS. 相似文献
19.
Beechem T Graham S Kearney SP Phinney LM Serrano JR 《The Review of scientific instruments》2007,78(6):061301
Analysis of the Raman Stokes peak position and its shift has been frequently used to estimate either temperature or stress in microelectronics and microelectromechanical system devices. However, if both fields are evolving simultaneously, the Stokes shift represents a convolution of these effects, making it difficult to measure either quantity accurately. By using the relative independence of the Stokes linewidth to applied stress, it is possible to deconvolve the signal into an estimation of both temperature and stress. Using this property, a method is presented whereby the temperature and stress were simultaneously measured in doped polysilicon microheaters. A data collection and analysis method was developed to reduce the uncertainty in the measured stresses resulting in an accuracy of +/-40 MPa for an average applied stress of -325 MPa and temperature of 520 degrees C. Measurement results were compared to three-dimensional finite-element analysis of the microheaters and were shown to be in excellent agreement. This analysis shows that Raman spectroscopy has the potential to measure both evolving temperature and stress fields in devices using a single optical measurement. 相似文献
20.
多晶硅纳米薄膜具有优良的压阻特性,为提高其在传感器应用中的稳定性和可靠性,对这种薄膜的钝化层结构进行了研究.基于压力传感芯片的结构特点,建立了钝化层结构的有限元分析分析模型,给出了应力分布与SiO_2和Si_3N_4钝化层结构之间关系.结果表明:采用Si_3N_4-SiO_2-Si_3N_4复合钝化结构,适当控制各结构层厚度可有效降低热失配引起的内应力.从而给出了降低薄膜内应力的钝化方法,为多晶硅纳米薄膜在压阻式传感器上的应用提供了必要的技术支持. 相似文献