960 MHz同轴介质谐振器滤波器的研制

研制了用四个高Q值介质同轴谐振器构成的带通滤波器,谐振器之间的耦合通过陶瓷基片上的电容实现,讨论了影响谐振器插入损耗的主要因素。结果表明,该四级式低损耗介质同轴谐振器滤波器中心频率f0为960MHz,插入损耗小于3.0dB,能满足设计要求。     

抽头式折叠线SIR带通滤波器设计

提出一种以抽头线方式输入信号的折叠线阶梯阻抗谐振器(SIR),应用低温共烧陶瓷(LTCC)叠层技术实现,可获得大的电容值,缩短谐振腔的长度,实现小型化。分析了输入线抽头的位置对滤波器性能的影响,利用等效的集总电路原理图解释了该结构易在通带右侧出现传输零点的原因。应用二级耦合SIR设计了一个尺寸为2.5mm×2.0mm×0.9mm,中心频率为2.45GHz的带通滤波器,仿真结果显示带内插损小于1.1dB。     

L 波段带双零点的窄带LTCC 滤波器设计

本文应用LTCC 技术设计了一个L 波段二阶Chebyshev 窄带带通滤波器。该滤波器集成在9 层LTCC 介质中,采用等效集总元件（电容电感)结构,充分利用LTCC 的三维封装结构减小滤波器体积,通过谐振单元中集总元件的串并联产生两个带外传输零点,同时调整谐振单元耦合间距控制带宽。滤波器输入输出利用金属通孔将带状线过渡到微带上。滤波器（带过渡结构）的仿真结果为：中心频率1.42 GHz,1 dB 相对带宽2.1%,插入损耗通带内最低0.5 dB, 回波损耗优于20 dB,整个滤波器体积为：4.5×4×0.87 mm3。     

改进型梯形谐振滤波器的带通滤波器设计

提出了一种改进型的梯形滤波器,串联支路由单端谐振器构成,并联支路由单端对谐振器与电容元件组成.以这种改进型梯形谐振滤波器为基本单元,进行了五级级联,同时并联了一个SAW谐振器,设计出一个带通滤波器.利用等效电路模型,得到了频率响应.与传统方法相比,通带内更加平稳,同时获得了一个陡峭的过渡带,带外抑制达30 dB以上.     

附加传输零点的层叠式LTCC带通滤波器设计

利用Ansoft Designer和Ansoft Hfss软件,协同设计带有两个传输零点的LTCC层叠式带通滤波器.滤波器采用集总电容C和集总电感L实现,其尺寸20 mm×8 mm×1.2 mm.通过在各谐振单元之间引入耦合,滤波器在阻带低端和高端共产生两个传输零点,从而有效提高了滤波器带外衰减特性.实际测试表明滤波器通频带内插损小于2 dB,回波损耗大于20 dB,测试结果与仿真结果有很好的吻合.     

基于λ/4和非对称λ/2谐振器的三阶微带滤波器设计

提出了一种基于电容加载 λ/4 梳状线谐振器和电容加载非对称 λ/2准梳状线谐振器的三阶耦合滤波器拓扑结构。利用奇偶模方法,给出并分析了整个滤波器结构的等效电路,由导纳矩阵可以得出传输零点的位置。实际制作了一个中心频率为1.83 GHz的三阶微带带通滤波器,相对带宽为9%,带内中心插损仅为1.45 dB,回波损耗优于14 dB。传输响应在通带两侧分别存在一个传输零点,有利于提高滤波器的选择性。实验结果表明,测试结果与仿真结果基本一致。     

基于LTCC工艺的小型化可调频带通滤波器的设计

设计了一款基于低温共烧陶瓷(LTCC)技术的小型化带通滤波器。采用两谐振器之间的耦合效应,减小了器件的尺寸。在HFSS中建立滤波器模型并仿真,滤波器的中心频率为1.07 GHz,带宽为428 MHz,回波损耗大于22 dB,2 f_0处抑制大于45 dB,整体尺寸仅为6.5 mm×4 mm×0.9 mm。在此滤波器上模拟表贴变容二极管来调节两个谐振器中的电容实现中心频率可调。结果表明,滤波器的中心频率在1.05~1.23 GHz内连续变化,在中心频率变化过程中插损始终小于1 dB,回波损耗始终大于15 dB,2f_0处抑制大于45 dB。     

一种用于带通Σ-Δ调制器的25MHz低功耗开关电容谐振器

介绍了一种运用于带通Σ-Δ调制器的谐振频率为25MHz的低功耗开关电容DD谐振器电路.电路采用了运算放大器共享技术和双采样技术,同时对单元电路进行优化,达到功耗最小化.该谐振器电路采用SMIC 0.25μm混合信号CMOS工艺进行设计,整个电路模块面积仅为0.09mm2.测试结果表明,使用该谐振器电路的带通Σ-Δ调制器工作于100MHz采样频率时,对于信号带宽为1kHz的输入信号,调制器的输出在谐振频率处SFDR约为77dB.整个谐振器功耗为10.5mW.     

基于ADS的数字调谐跳频滤波器设计方法

介绍了基于ADS的数字调谐跳频滤波器仿真设计方法。根据集总元件耦合谐振器滤波器理论计算出滤波器仿真参数,应用ADS对包括微带线、PIN二极管等参数模型的滤波器电路模拟仿真,解决数字调谐跳频滤波器电容阵列的取值问题。结合ADS仿真数据和实物测试结果,验证了该方法的有效性。     

LTCC微波带通滤波器集总电路模型研究

通过引入不同的导纳变换器,提出了基于LTCC(low temperature cofired ceramics)技术的电容性耦合、电感性耦合、电容-电感混合耦合的微波带通滤波器集总电路模型,每一种模型都给出了具体的设计公式.从理论上分析了三种模型各自的优缺点,并用电路仿真软件ADS进行验证,为集总参数元件微波带通滤波器的电磁仿真和实际制作提供了理论依据.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks