Growth of epitaxial Cd<Subscript>1–<Emphasis Type="Italic">x</Emphasis> </Subscript>Mn<Subscript> <Emphasis Type="Italic">x</Emphasis> </Subscript>Te films

We have studied the growth and structure of epitaxial films of Cd_1–xMn_x (x = 0.03) diluted magnetic solid solutions grown on mica substrates by molecular beam epitaxy and identified conditions for producing n- and p-type epitaxial films. Using an additional Te vapor source and optimizing the substrate temperature in the growth process, we were able to obtain structurally perfect p-type Cd_1–xMn_xTe (x = 0.03) films with clean, smooth surfaces. The growth plane of the films on the mica substrates is (111) of a face-centered cubic lattice and their unit-cell parameter is а = 6.477 Å.     

Thermal conductivity of Er<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Sn<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Se (<Emphasis Type="Italic">x</Emphasis> ≤ 0.025) solid solutions

The thermal conductivity of Er _x Sn_{1 ? x} Se solid solutions has been measured at temperatures from 80 to 360 K. The results have been used to evaluate the electronic and lattice components of thermal conductivity for elastic carrier scattering, parabolic bands, and arbitrary degeneracy. With increasing erbium content and temperature, both the electronic and lattice components decrease considerably. Long-term annealing increases both components. It follows from the present experimental data that heat conduction in Er _x Sn_{1 ? x} Se is mainly due to phonons and that the observed rise in thermal resistance with Er content is due to phonon-phonon and paramagnetic-ion scattering.     

Enhanced Superconductivity in Double-Doping Cu<Subscript>0.15</Subscript>TaSe<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript><Emphasis Type="Italic">S</Emphasis><Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

Superconducting Cu _x TaSe₂(x=0.05, 0.15) and Cu_0.15TaSe_2?x S _x (x=0, 0.5, 1, 1.5) single crystals have been systematically fabricated by a chemical vapor transport method. It is found that the double doping in TaSe₂, i.e., the simultaneous intercalation of Cu and substitution of Se by S, can substantially enhance the superconducting transition temperature. Transport property measurements give evidence of the coexistence and competition of charge density wave state and superconductivity in Cu _x TaSe₂ which provide meaningful information to understand the complex electronic states in this system. The parallel shift and the fan-shape broadening behaviors are observed in the superconducting transition curves under magnetic fields of Cu_0.15TaSeS and TaSeS, respectively, indicating an increase of coherence length and suppression of superconducting fluctuation induced by copper intercalation.     

The thermovoltaic effect in variband solid solution Si<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> (0 ≤ <Emphasis Type="Italic">x</Emphasis> ≤ 1)

The thermovoltaic effect in films of variband solid solution Si_1–x Ge _x (0 ≤ x ≤ 1) has been observed for the first time. The samples comprised n-Si–p-Si_1–x Ge _x (0 ≤ x ≤ 1) heterostructures grown by liquid phase epitaxy. An electromotive force within 0.05–0.3 mV and a current of 0.0025–0.0035 μA appeared on heating samples in a temperature range from 40 to 250°C.     

Synthesis and structural properties of AgCl<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Br<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> (<Emphasis Type="Italic">x</Emphasis> = 0.5–0.8) solid solutions

The properties of AgCl_{1 - x} Br_x ( x = 0.5-0.8) solid solutions prepared by the Bridgman-Stockbarger method are studied using a variety of techniques (x-ray diffraction, microstructural examination, chemical analysis, and x-ray microanalysis). The lattice parameter of the solid solutions is found to exhibit a negative deviation from additivity. The effects of composition and preparation conditions on the structural properties of the solid solutions are discussed. The structural characteristics of abrasively polished surfaces of the samples are shown to be influenced by the preparation conditions.Translated from Neorganicheskie Materialy, Vol. 41, No. 1, 2005, pp. 78–87. Original Russian Text Copyright © 2005 by Artjushenko, Baskov, Golovanov, Kuzmicheva, Lisitskii, Musina, Polyakova, Sakharov, Sakharova.     

Synthesis of ultrafine fluorite Sr<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Nd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>F<Subscript>2 + <Emphasis Type="Italic">x</Emphasis></Subscript> powders

We have identified conditions that ensure the preparation of ultrafine Sr_{1 − x} Nd _x F_{2 + x} powders uniform in phase composition. The powders were characterized by X-ray diffraction and scanning electron microscopy. The powder particles have the form of faceted nano- and microcubes and range in size from 30–100 nm to 0.3–2.5 μm, depending on precipitation conditions.     

Mechanism of nanostructuring in fluorite-like Ca<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>La<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>F<Subscript>2 + <Emphasis Type="Italic">x</Emphasis></Subscript>

Nanostructuring in fluorite-like Ca_{1 ? x} La _x F_{2 + x} is shown to be associated with the precipitation of an CuAu-ordered phase. The shape of the precipitates is governed by the energetics of the {001} and {111} faces of tetragonal inclusions in highly anisotropic media and is nearly cuboctahedral. The misfit strain relaxes through the generation of twins, which nucleate along the intersection lines of {001} and {111} faces. The twins impede facial development and further growth and ordering of precipitates, thereby freezing the precipitation process in its initial stage. For this reason, the phase segregation is difficult to reveal, and Ca_{1 ? x} La _x F_{2 + x} crystals appear homogeneous.     

Homogeneity of high-resistivity <Emphasis Type="Italic">p</Emphasis>-Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>〈Au〉 crystals

p-Si_{1 ? x} Ge _x crystals have been diffusion-doped with gold. Gold diffusion in the p-Si_{1 ? x} Ge _x 〈Au〉 samples and their electrical properties have been studied. The results demonstrate that the highest gold concentration in the crystals can be achieved in the temperature range 1000–1050°C. An expression has been derived which indicates that, all other factors being the same, compensation with Au, an amphoteric impurity, insures better homogeneity compared to codoping with acceptor and donor impurities. The hole concentration homogeneity in gold-compensated samples is at the same level as or even better than that in the uncompensated material.     

Thermal conductivity of Sn<Subscript>1–<Emphasis Type="Italic">x</Emphasis> </Subscript>Mn<Subscript> <Emphasis Type="Italic">x</Emphasis> </Subscript>Te single crystals

The thermal conductivity of homogeneous crystalline Sn_1–xMn_xTe samples has been measured in the temperature range 90–305 K. We have determined their electron and lattice thermal conductivities and their thermal resistivity due to structural defects. The results demonstrate that the electron thermal conductivity reaches ~50% of the total thermal conductivity in some of the samples and that structural defects make an appreciable contribution to the thermal resistivity of the crystals.     

Structural Properties of Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Hg<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>Te Solid-Solution Nanoparticles

It is shown that Cd _x Hg_1–xTe solid-solution nanoparticles can be produced by ball milling, but their presence is masked by larger particles. The methods of laser-correlation spectroscopy and X-ray-diffraction analysis have been used to study the structure of the nanoparticles and their size distribution. The presence of a compositional disordering of the solid solution structure was experimentally confirmed.     

Preparation and Properties of Mn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Hg<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Te

Mn _x Hg_{1 ? x}Te (x = 0.05, 0.12) single crystals were grown by solid-state recrystallization, and their axial and radial homogeneity was assessed by optical, electrical, and electron-microscopic measurements. The crystals are p-type, with a hole concentration of (4.3–5.3) × 10²² m^?3 and Hall mobility in the range (410–570) × 10^?4 m²/(V s).     

Magnetic Phase Diagram of CuCr<Subscript>2–<Emphasis Type="Italic">x</Emphasis></Subscript>Sb<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript>4</Subscript> Solid Solutions

The magnetization of CuCr_2–xSb _x S₄ solid solutions has been measured as a function of temperature between 300 and 5 K in a weak (3980 A/m) and a strong (7960 A/m) magnetic field. We have identified the type and character of the magnetic transformations observed in the system and determined the temperature and composition limits of the stability regions of the magnetically active phases involved and the cation and valence distributions in them. A magnetic phase diagram of the synthesized materials has been mapped out, where the largest area (0 < x < 0.23) after the paramagnetic region is occupied by solid solutions based on the CuCr₂S₄ ferromagnet. In the composition range (0.23 < x < 0.40) adjacent to the infinite clusters—CuCr₂S₄ ferromagnet and CuCr_1.5Sb_0.5S₄ antiferromagnet—the phase diagram contains medium and small finite ferro- and antiferromagnetic clusters forming a short-range magnetic order or spin glass. The compositions based on the CuCr_1.5Sb_0.5S₄ antiferromagnet lie in the composition range 0.4 < x < 0.5.     

Raman spectroscopy determination of carrier concentration in <Emphasis Type="Italic">n</Emphasis>-In<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>As epitaxial films

We have studied in detail the coupled phonon-plasmon mode Raman spectra of n-In _x Ga_{1 − x} As with n in the range 10¹⁷ to 10¹⁹ cm⁻³. The results indicate that the behavior of the high-frequency mode L ₊ can be described in terms of coupled modes in the Drude approximation. The proposed theory and experimental data are used to estimate the carrier concentration in the solid solution and its composition.     

Visible-light-induced hydrogen evolution reaction with WS<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript>

WS₂ is a promising catalyst for the hydrogen evolution reaction. We have explored photocatalytic properties of ternary sulphoselenides of tungsten (WS _x Se _2?x ) by the dye-sensitized hydrogen evolution. WS _x Se _2?x solid solutions are found to exhibit high activity reaching 2339 μmol h^?1 g^?1 for WSSe, which is three times higher than that of WS₂ alone (866 μmol h^?1 g^?1 ). The turnover frequency is also high (0.7 h^?1 ). Such synergistic effect of selenium substitution in WS₂ is noteworthy.     

Magnetic Properties and Superconductivity in GdFeAsO<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>F<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

Abstract A series of GdFeAsO_1−x F _x (x=0,0.1, 0.2, and 0.25) samples have been synthesized with conventional solid-state method. The phase purity is significantly improved by using Fe₂O₃ as the source of oxygen, compared to those prepared using Gd₂O₃ as the precursor. The lattice parameters are found to shrink with increasing fluorine doping level. The F-doped samples show a superconducting transition with T _c increasing with doping level, reaching T _c=40.1 K at x=0.25. A pronounced Curie–Weiss-like paramagnetic background, which is usually attributed to the impurity phases, is found to be independent of the fluorine doping level and proven to come from the Gd³⁺ in the GdFeAsO_1−x F _x compound with the effective magnetic moment of Gd³⁺ being μ _eff=7.83±0.05 μ_B. The extrapolated slope of dH_c2/dT|_T=Tc{dH}_{\mathrm{c2}}/dT|_{T=T_{\mathrm{c}}} in this system is about −4.5 T/K.     

Seebeck coefficient of Ca<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>Pr<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>MnO<Subscript>3–δ</Subscript> paramagnetic manganites

The Seebeck coefficient (S) of Ca_1–x Pr _x MnO_3–δ (х = 0, 0.05, 0.10, 0.15) manganites with a perovskite-like structure has been measured in air at temperatures (T) from 300 to 1200 K. The negative sign of their S indicates that all of the samples have n-type conductivity. The observed increase in the magnitude of the Seebeck coefficient with increasing T is interpreted in terms of small-polaron transport with allowance for the decrease in Mn³⁺ concentration as a result of the disproportionation reaction 2Mn³⁺ = Mn²⁺ + Mn⁴⁺. Based on a theoretical analysis of experimental S(T) data, we calculated equilibrium constants for the disproportionation reaction, carrier concentration, and the concentration of sites available for carrier migration as functions of temperature. It has been shown that, for an adequate analysis of electron hopping and calculation of the Seebeck coefficient of the electron-doped manganites, the spin state of the Mn⁴⁺ ions should be taken into account.     

Lattice parameter of PbTe<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Cl<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> solid solutions

The lattice parameter of PbTe_1?x Cl _x solid solutions is shown to be a nonmonotonic function of chlorine content, with a minimum at x = 0.005. The results are interpreted in terms of a self-compensation model.     

Mechanism of AC charge transport in TlSb<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript>2</Subscript> (<Emphasis Type="Italic">x</Emphasis> = 0 and 0.03)

The dielectric properties and ac electrical conductivity of TlSb_1–xGa _x S₂ (x = 0, 0.03) single-crystals have been measured in the frequency range 5 × 10⁴ to 3.5 × 10⁷ Hz. Experimental data on the frequency dispersion of the dielectric coefficients and electrical conductivity of the TlSb_1–xGa _x S₂ (x = 0, 0.03) single crystals have allowed us to identify the nature of the dielectric loss and the mechanism of charge transport and evaluate parameters of localized states in the band gap. The incorporation of gallium atoms into the crystal lattice of TlSbS₂ crystals has been shown to lead to an increase in the Fermi-level density of states and mean hop time and distance.     

Magnetocaloric effect in La<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>Ca<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>MnO<Subscript>3</Subscript> for <Emphasis Type="Italic">x</Emphasis> = 0.3, 0.35, and 0.4

We present systematic studies of the magnetocaloric properties of the polycrystalline La_1−x Ca _x MnO₃ system for x = 0.3, 0.35, and 0.4 near a second-order phase transition from a ferromagnetic to a paramagnetic state. The crystal structure of the studied manganites was shown to be in good agreement with previous reports. The value of the magnetocaloric effect has been determined from the measurement of magnetization as a function of temperature and external magnetic field. The maximum entropy change detected in La_0.7Ca_0.3MnO₃ at a field of 2 T reaches 8 J/kg K which exceeds that of gadolinium. In all studied samples, the paramagnetic–ferromagnetic transition is very narrow but no hysteresis is observed and the transitions are identified as second-order ones. The phase transition in La_0.7Ca_0.3MnO₃ appears to be almost of first-order.     

Crystal Structure of Nb<Subscript>5</Subscript>Si<Subscript>3 − <Emphasis Type="Italic">x</Emphasis></Subscript>P<Subscript>0.5 + <Emphasis Type="Italic">x</Emphasis></Subscript> (<Emphasis Type="Italic">x</Emphasis> = 0–0.5)

The structure of the ternary compound Nb₅Si_{3 ? x}P_{0.5 + x} (x = 0–0.5) is determined by single-crystal x-ray diffraction: sp. gr. P6₃mc, a = 1.32350(5) nm, c = 0.52954(1) nm; R _F = 0.028, R_w = 0.081 for 547 reflections with F _hkl > 4.0σ(F _hkl ). Relations between the structure of Nb₅Si_{3 ? x}P_{5 + x}, the Mn₅Si₃ structure type, and its derivatives are discussed.