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本文叙述辉光放电激励型封离CO_2激光器的进展,着重介绍Au或Ag_2O_3催化剂和磁增强放电技术,使这类激光器的输出功率提高到相当于或超过慢流速CO_2激光器的水平。 相似文献
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通常我们可以用眼睛观察来调整横向激励的气件激光器的反射镜,但是比较粗略,当然,我们还可以用He-Ne激光器或内调焦望远键来调整,但是它需要仪器设备。本文介绍了另一种调整方法,就是利用激光本身的小孔衍射图象来调整,而且能够在激光输出状态下作动态性精确的调整。 相似文献
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依据微空心阴极自持的辉光放电结构,设计了一款新颖的微小放电结构.用空气进行了有关的放电实验,稳定的直流辉光放电,放电气压最大能够达到66.7 kPa.放电的伏安特性具有正的斜坡,放电能够稳定地运行,而不需要个体镇流电阻.在气压为40 kPa和放电电流为60 mA时,放电等离子体中的电流密度估计为0.048 A/cm2,功率密度估计为52.8 W/cm3,电子密度估计为2.7×1013 cm-3.实验结果表明:这种高气压、大体积、高电子密度的放电等离子体能够用作小型激光器的工作介质. 相似文献
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介绍了微空心阴极放电(microhollow cathode discharge,简称MHCD)的特点,根据MHCD的基本结构设计了—种新的放电结构:它由一个电源和一个可变电阻器构成“微空心阴极维持的辉光放电”,MHCD作为放电的阴极,金属针作为放电的阳极。利用该放电结构进行了空气的放电实验,产生了高气压大体积高电流密度的辉光放电等离子体,用于工业上的多种等离子体加工中;如果用稀有气体放电则能够用来作为微型准分子激光器的增益介质。在200Torr气压下,获得了稳定的空气直流放电,等离子体中电子密度估计在1011到1012cm-3之间,测得放电电流范围;8mA-30mA。测得放电V-I特性曲线,它有典型的微空心阴极维持的辉光放电的特点.估计的气体放电温度为2000K左右。 相似文献
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The fabrication and characterization of silicon p-n junction solar cells with various glow discharge, unanalyzed, molecular
implanted emitter regions is described. Total area simulated air mass one (AM1) power conversion efficiencies without AR coatings
or back surface fields are at best 8.2% compared to 9.1% for conventionally implanted or POC13 thermally diffused cells on similar substrates. To achieve optimum performance, Q-switched ruby laser light was incorporated
into the molecular implant annealing procedure. Conversion efficiencies greater than 8% were achieved with the four dopants
BC13, PC13 AsF3 and POC13. For similar processing, conversion efficiency with BF3 implants was less than those of previous investigations, most likely due to poor crystalline regrowth of the heavily doped
emitter regions. Cell quantum efficiency and mesa junction ideality are shown to be similar to those of conventional cells
while molecular implant sheet resistance values varied, generally being directly related to the dopant molecular weight.
Work submitted in partial fulfillment of Ph.D. in Electrical Engineering at the Univ. of Missouri, Columbia, MO 65211 相似文献
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提供了一个理论计算紫外预电离TE(A)CO2激光器自持辉光放电的放电阻抗的方法,并以脉冲形成网络(PPN)放电TE(A)CO2激光器粉列,计算了其自持辉光放电“准稳态”阶段的放电阻抗随激光混合气气压的变化情况。 相似文献
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为了提高大功率轴快流CO2激光器的单根放电管的质量流量,得到更大的单根放电管的输出功率,对原有放电管的喷嘴、绕流环等结构进行了改进和优化,设计出一种新型的大质量流量放电管。采用数值模拟和实验验证的方法对新设计的放电管内的气体流动状态和输出功率进行分析,得到了工作气体的质量流量,放电管的输出功率以及工作气体在放电管内的流场分布,数值模拟结果和实验结果一致,并对不同结构的放电管的输出功率和流场分布进行了比较。结果表明,新设计的放电管的质量流量明显增加,单根放电管的输出功率提高,且能够得到均匀的辉光放电。 相似文献
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Pascal Sanchez Beatriz Fernndez Armando Menndez David Gmez Rosario Pereiro Alfredo Sanz‐Medel 《Progress in Photovoltaics: Research and Applications》2014,22(12):1246-1255
The analytical potential of radiofrequency pulsed glow discharge optical emission spectrometry (rf‐PGD‐OES) is investigated for quantitative depth profiling analysis of thin‐film solar cells (TFSC) based on hydrogenated amorphous silicon (a‐Si:H). This method does not require sampling at ultra‐high‐vacuum conditions, and so it facilitates higher sample throughput than do reference techniques. In this paper, the determination of compositional depth profiles of a‐Si:H TFSC was performed by resorting to a multi‐matrix calibration procedure. For this purpose, certified reference materials, as well as laboratory standards based on individual layers of doped a‐Si:H, were simultaneously employed to build the analytical calibration curves. Results show that rf‐PGD‐OES allows us to discriminate the different layers of photovoltaic devices: the front contact composed by ZnO:Al2O3 (AZO), the a‐Si:H layer (the B‐doped, intrinsic a‐Si:H and P‐doped films), the AZO/Al back contact and substrate. A good agreement with the nominal values for element concentrations (e.g. 0.4% of H, 1.5% of B and 3.7% of P) and layer thicknesses (in the range of 950 nm for the front contact and 13 nm for the P‐doped a‐Si:H layer) was obtained, demonstrating the ability of rf‐PGD‐OES for a direct, sensitive and high‐depth‐resolution analysis of photovoltaic devices. Moreover, diffusion processes between the coating layers, which could have an important influence on the final efficiency of TFSC, can be identified as well. Hence, the findings support the use of rf‐PGD‐OES as an analysis method in the development of photovoltaic thin films. Copyright © 2013 John Wiley & Sons, Ltd. 相似文献
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本文建立了不考虑电压上升时间的均匀脉冲放电预电离条件,所得结果和前人的实验数据符合较好,修正了前人的研究成果。 相似文献
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以薄膜沉积、外延生长及后续的光刻、激光与物质的相互作用、等离子体研究为目的,研究了XeCl动力学模型及辉光实现。采用辉光脉冲放电方法,实现了激光输出,根据动力学方程、XeCl激光四能级模型,计算了XeCl反应速率及密度。结果表明,辉光放电稳定,激光脉宽短,功率高,辉光放电体积大,激光脉宽18ns,单脉冲能量450mJ,矩形光斑2cm×1cm,束散角3mrad。动力学分析和系统模型成立,激光对靶材溅射获得了等离子羽辉。 相似文献