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采用非光敏苯并环丁烯(BCB)进行MEMS压阻式加速度敏感芯片三层结构制作.BCB键合具有工艺温度低、键合表面要求低等特点,适用于芯片的圆片级封装.但是固化过程中BCB粘度随温度升高而下降,流动性变大,在毛细作用的影响下沿着微小间隙流淌,导致可动部件粘连,器件失效.通过控制BCB厚度、增加BCB阻挡槽解决了可动部件粘连问题,制作了三层硅结构的加速度敏感芯片.样品漏率小于1.0×10-10pa.m3/s,键合剪切强度大于20 MPa,能够满足航天、工业、消费电子等各领域的应用需求. 相似文献
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采用非光敏苯并环丁烯﹙BCB﹚进行MEMS压阻式加速度敏感芯片三层结构制作。BCB键合具有工艺温度低、键合表面要求低等特点,适用于芯片的圆片级封装。但是固化过程中BCB粘度随温度升高而下降,流动性变大,在毛细作用的影响下沿着微小间隙流淌,导致可动部件粘连,器件失效。通过控制BCB厚度、增加BCB阻挡槽解决了可动部件粘连问题,制作了三层硅结构的加速度敏感芯片。样品漏率小于1.0×10 10Pa.m3/s,键合剪切强度大于20 MPa,能够满足航天、工业、消费电子等各领域的应用需求。 相似文献
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硅牌键合技术的研究进展 总被引:2,自引:0,他引:2
硅片键合技术是指通过化学和物理作用将硅片与硅片、硅片与玻璃或其它材料紧密地结合起来的方法.硅片键合往往与表面硅加工和体硅加工相结合,用在MEMS的加工工艺中.常见的硅片键合技术包括金硅共熔键合、硅/玻璃静电键合、硅/硅直接键合以及玻璃焊料烧结等.文中将讨论这些键合技术的原理、工艺及优缺点. 相似文献
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两电极多层阳极键合实验研究 总被引:1,自引:0,他引:1
介绍了用2个电极通过一次电极反接的方式实现多层样片之间阳极键合的操作工艺和键合机理,并以玻璃-硅-玻璃三层结构为例对其进行了实验研究。结果显示:多余的玻璃对第一次键合过程的电流特性影响不大,而第一次键合的玻璃对第二次键合电流产生显著的影响,电流出现不规则的突变。而且,在第二次键合过程中,第一次键合的玻璃在键合面上会出现由于钠元素积聚而产生的黄褐色斑点。拉伸强度实验的结果表明:第二次键合过程中在第一次键合面形成的反向电压会减弱键合的强度;通过合理选择键合参数可以得到满足MEMS封装要求的键合强度。 相似文献
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采用介质键合技术制备的Si基GaAs材料衬底,缺陷密度小。对待键合的器件结构电学性能影响小。对采用目前常见的介质材料制备的Si基GaAs材料的力学性能进行了仿真分析,得到用于制备MEMS衬底的最佳介质键合层是SiO2,其衬底材料应力转换率高、量程大、位移小、制备工艺简单且为亲水性,制备的Si基GaAs衬底键合强度大,机械特性好。同时,对不同厚度的介质层材料对Si基GaAs材料的力学性能影响进行了研究分析,得到介质厚度越厚,其应力转换率越高,衬底材料的力敏效应就会越好。 相似文献
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Benzocyclobutene (BCB) is a thermosetting polymer that can form microfluidics and bond top and bottom layers of the microfluidics
at the same time, and yields high repeatability and high bonding strength. This paper reports using photosensitive BCB to
fabricate microfluidics and to bond with a thermal press for 4 in. wafers. By optimizing the parameters for pattern development
and using a three-stage temperature and pressure increment BCB bonding, we realize the whole wafer glass–Si or glass–glass
bonding in thermal press without any crack. The wafer-level bonding shows a bonding percentage above 70%, a tensile stress
above 4.94 MPa, and a bonding repeatability over 95%. Furthermore, the bonding is compatible with thick electrode integration,
that microfluidics with 380 nm thick electrodes underneath can be well-bonded. Our bonding method much reduces the cost compared
with bonding BCB in a wafer bonding machine.
Electronic supplementary material The online version of this article (doi:) contains supplementary material, which is available to authorized users. 相似文献
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Seonho Seok Michel Fryziel Nathalie Rolland Paul-Alain Rolland 《Microsystem Technologies》2012,18(12):2035-2039
This paper presents a Si cap zero-level packaging technique based on a double-layer BCB sealing ring. The BCB ring is defined before the housing cavity etching to achieve high BCB bonding strength. It is found that the non-uniformity of the BCB ring defined on a Si cap with housing cavity prevents the package having high bonding strength. Three different packages have been prepared for shear test; a Si cap without cavity, a recessed Si cap with a conventional BCB ring and a recessed Si cap with pre-defined BCB ring. The three samples for each type of package are measured. The average measured bonding strengths of the test samples are 71, 16 and 42?MPa, respectively, and hence the proposed BCB sealing ring process provides 60?% of bonding strength of Si cap package without cavity for Si cap package with cavity. In addition, the insertion loss change of the packaged CPW is less than 0.1?dB up to 67?GHz while the return loss better than 15?dB at the measured frequency range. 相似文献
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Sebastien Brault O. Garel G. Schelcher N. Isac F. Parrain A. Bosseboeuf F. Verjus M. Desgeorges E. Dufour-Gergam 《Microsystem Technologies》2010,16(7):1277-1284
A low cost and low temperature thin film packaging process based on the transfer of an electroplated Nickel 3D cap is proposed.
This process is based on adhesion control of a thick molded cap Ni film on the carrier wafer by using a plasma deposited fluorocarbon
film, on mechanical debonding and on adhesive bonding of the microcaps on the host wafer with BCB sealing rings. Mechanical
characterizations show that the transferred microcaps have a high stiffness, a low stress and a high adhesion. Because this
process is simple and only involves a low temperature (250°C) heating of the host wafer, it is highly versatile and suitable
for the encapsulation of micro and nano devices, circuits and systems elaborated on a large range of substrate materials. 相似文献
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Microsystem Technologies - This paper presents the effect of BCB sealing ring flatness on BCB bonding for wafer-scale BCB cap transfer packaging. BCB sealing ring has shown partial bonding or full... 相似文献
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Bardin F. Kloss S. Changhai Wang Moore A.J. Jourdain A. De Wolf I. Hand D.P. 《Journal of microelectromechanical systems》2007,16(3):571-580
Laser joining is a promising technique for wafer-level bonding. It avoids subjecting the complete microelectromechanical system (MEMS) package to a high temperature and/or the high electric field associated with conventional wafer-level bonding processes, using the laser to provide only localized heating. We demonstrate that a benzocyclobutene (BCB) polymer, used as an intermediate bonding layer in the packaging of MEMS devices, can be satisfactorily cured by using laser heating with a substantial reduction of curing time compared with an oven-based process. A glass-on-silicon (Si) cavity bonded with a BCB ring can be produced in a few seconds at a typical laser intensity of 1 W/mm2 resulting in a local temperature of ~300degC. Hermeticity and bond strength tests show that such cavities have similar or better performance than cavities sealed by commercial substrate bonders. The influence of exposure time, laser power, and applied pressure on the degree of cure, bond strength, and hermeticity is investigated. The concept of using a large area uniform laser beam together with a simple mirror mask is tested, demonstrating that such a mask is capable of protecting the center of the cavity from the laser beam; however, to prevent lateral heating via conduction through the Si, a high-conductivity heat sink is required to be in good thermal contact with the rear of the Si. 相似文献
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This paper presents an integration technology for RF passives using benzocyclobutene (BCB)/metal multilayer interconnection
for system-in-package applications. This technology has been specially developed for RF subsystem packages in which a thick
polymer, BCB (more than 15 μm thick), is adopted as dielectric with lossy silicon as substrate for its excellent characteristics.
Both dry-etch BCB and photosensitive BCB are applied in this work, and their processes are briefly introduced and compared.
An RF power divider, an MIM capacitor, different types of RF inductors as well as a coupled microstrip based band-pass filter
are fabricated and measured at wafer level. The results show good electrical performances, and accordingly the passives are
well applicable in RF band. Moreover, the subsystem models including monolithic chips connected with passives are presented. 相似文献
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分析了基于失配电流控制的高阶补偿带隙基准的补偿原理,并研究了工艺偏移对基准电压温度系数的影响。基于失配电流控制的补偿策略具有结构简单、控制精度高,而且可以通过调整失配电流和多晶电阻阻值,使带隙基准具有较低的温度系数,同时具有较强的工艺健壮性。模拟分析表明,在-25℃-125℃温度范围内,在 TT(Typical -Typical)工艺角下,带隙基准的温度系数为4.8ppm /℃,同时在其他工艺角下,带隙基准的温度系数都可控制在9.0ppm /℃以下。通过无锡上华科技(CSMC)0.18μm CMOS 工艺实验验证,采用这种简单失配电流控制的高阶补偿带隙基准,在3V 电源电压下,在-20℃-120℃温度范围内,带隙基准的温度系数最低为6.9ppm /℃。 相似文献
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The use of a laser to provide localised heating is an ideal solution to the problem of packaging micro-electro-mechanical-systems
(MEMS) whilst maintaining a low device temperature to avoid changes in temperature-sensitive materials in the device. In this
paper we present localised laser bonding of glass to silicon (normally used as the MEMS substrate) by using a fibre-delivered
high power laser diode array to cure an intermediate layer of the thermosetting polymer Benzocyclobutene (BCB). In our experiments,
we use two techniques to realise localised heating: one is to use an axicon together with a conventional positive lens to
generate a ring focus; the other is to use a scanning focused laser beam. In both cases localised cooling is required to confine
the elevated temperatures to the bonding area. Finite Element (FE) simulation indicates that both techniques should keep the
temperature in the centre of the package to approximately that of the ambient environment (300 K) during the process. However,
experiments show that the temperature in the centre of the package rises to a value of around 500 K, likely due to poor contact
between silicon and cooling sink. Experimentally, we confirmed that either technique can be used to obtain excellent bonding
of glass to silicon with leak rate at a level of 10−10 mbar l s−1, whilst keeping the centre of device at a lower temperature. 相似文献
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Adhesive wafer bonding with a patterned polymer layer is increasingly attracting attention as cheap and simple 0-level packaging technology for microstructures, because the patterned polymer both fulfills the bonding function and determines the volumes between the two wafers housing the devices to be packaged. To be able to pattern a polymer, it has to be cross-linked to a certain degree which makes the material rigid and less adhesive for the bonding afterward. In this paper, a simple method is presented which combines the advantages of a patterned adhesive layer with the advantages of a liquid polymer phase before the bonding. The pattern in the adhesive layer is "inked" with viscous polymer by pressing the substrate toward an auxiliary wafer with a thin liquid polymer layer. Then, the substrate with the inked pattern is finally bonded to the top wafer. Benzocyclobuene (BCB) was used both for the patterned structures and as the "ink". Tensile bond strength tests were carried out on patterned adhesive bonded samples fabricated with and without this contact printing method. The bonding yield is significantly improved with the contact printing method, the fabrication procedure is more robust and the test results show that the bond strength is at least 2 times higher. An investigation of the samples' failure mechanisms revealed that the bond strength even exceeds the adhesion forces of the BCB to the substrate. Furthermore, the BCB contact printing method was successfully applied for 0-level glass-lid packaging done by full-wafer bonding with a patterned adhesive layer. Here, the encapsulating lids are separated after the bonding by dicing the top wafer independently of the bottom wafer. 相似文献