Heat transfer mechanisms during short-duration laser heating of thin metal films

A perturbation technique is used to simplify the generalized governing equations of the parabolic two-step model. The generalized form of the two-step model contains diffusion terms in both electron and lattice energy equations and assumes that incident laser radiation is absorbed by both electron gas and solid lattice to account for the thermal behavior of semiconducting and impure materials. The simplified perturbation technique is used to eliminate the coupling between the electron and the lattice energy equations when the temperature difference between the electron and the lattice is a small perturbed quantity, which is true in materials exhibiting high coupling factors. A mathematical criterion is derived to determine the conditions under which electron and lattice are in thermal equilibrium. It is found that five dimensionless parameters control the state of thermal equilibrium between the lattice and the electron.     

The thermal inertia of materials heated with a laser pulse faster than relaxation time

The nonlocal hyperbolic heat conduction equation is used to describe the thermal inertia of thin metal films (TMF) heated with femtosecond laser pulses. It is shown that for TMF the signatures of thermal inertia are (i) the delay of the heating process and (ii) the strong localization of the thermal energy in TMF.Paper presented at the Fourth International Workshop on Subsecond Thermophysics, June 27–29, 1995, Köln, Germany.     

Self diffusion studies on cobalt thin films

The study of lateral diffusion in thin metallic films is important from the application point of view, especially in electromigration reliability studies. Lateral self diffusion in cobalt thin films is studied using a non-destructive tracer scanning method. Neutron irradiation is employed to make a well-defined radioactive (⁶⁰Co) region in the middle of a continuous cobalt thin film stripe of width 3 mm. The experimental data are fitted to the appropriate solution of the diffusion equations by means of a non-linear least square fitting procedure using a computer. The diffusion experiments are conducted in the temperature range 300–600°C in argon atmosphere. This thin film data are compared with the diffusion data available on bulk cobalt. The activation energy for surface diffusion obtained (0·14 eV) is very much smaller than the reported activation energy for grain boundary diffusion in cobalt.     

Picosecond dynamics of thermal and acoustic transport in metal films

An optical transient reflectance technique has been developed to characterize both the thermal and the elastic properties of thin-film materials. The use of picosecond-duration laser pulses permits the study of metal films of the order of 100 nm thick. We demonstrate the measurement of thermal diffusivity and acoustic velocity, in addition to observations of the thermal impedance of a single metal-metal interface.Paper presented at the First Workshop on Subsecond Thermophysics, June 20–21, 1988, Gaithersburg, Maryland, U.S.A.     

Ag diffusion in ZnS thin films prepared by spray pyrolysis

ZnS thin films were deposited by spray pyrolysis method on glass substrates. Diffusion of Ag in ZnS thin films was performed in the temperature range 80-400 °C under a nitrogen atmosphere. The diffusion of Ag is determined with XRF, and the obtained concentration profile allows to calculate the diffusion coefficient. The temperature dependence of Ag diffusion coefficient is determined by the equation D = 8 × 10^− 9 exp(− 0.10 eV / kT). It was found that the as-grown undoped high resistive n-type ZnS thin films were converted to the p-type upon Ag doping with a slight increase in resistivity only by rapid thermal annealing at 400 °C in N₂ atmosphere. In addition, the band gap of the p-type film was decreased as compared with the undoped sample annealed under the same conditions. The results were attributed to the migration of Ag atoms in polycrystalline ZnS films by means of both along intergrain surfaces and intragrain accompanied by interaction with native point defect.     

Encryption of nonlinear optical signals in ZnO:Al thin films by ultrashort laser pulses

Described herein is the effect of optical annealing on the third-order non-linear optical properties exhibited by nanostructured Al-doped ZnO thin films. The samples were synthetized by an ultrasonic spray pyrolysis method. The optical annealing process was carried out by laser pulses at 532, 835 and 1064 nm wavelengths with, ps, fs and ps pulse duration, respectively. The optical non-linearity of the films was measured by the z-scan method with three different irradiations of excitation: 100 fs at 835 nm, 120 ps at 532 nm, and 150 ps at 1064 nm. The as-grown samples showed a saturable optical absorption that evolves into two-photon absorption transitions by a picosecond optical annealing phenomenon induced at 532 nm wavelength. Potential applications for developing optical encryption functions were considered.     

Modification of AlN thin films morphology and structure by temporally shaping of fs laser pulses used for deposition

We studied the effect of temporally pulse shaping upon the properties of thin layers synthesized by pulsed laser deposition with fs laser pulses generated by a Ti-sapphire laser source. We showed that the film morphology and structure can be gradually modified when applying mono-pulses of different duration or passing to a sequence of two pulses of different intensities.     

Structural relaxation of amorphous silicon carbide thin films in thermal annealing

Amorphous Si_0.4C_0.6 thin films were deposited by radio frequency magnetron sputtering onto non-heated single crystal Si substrates, followed by annealing at 800 °C or 1100 °C in the vacuum chamber. The chemical bond properties and atomic local ordering as a function of the annealing temperature were characterized by Auger electron spectroscopy, scanning electron microscopy, X-ray photoelectron spectroscopy, Infrared absorption spectroscopy, X-ray diffraction, and Raman spectroscopy measurements. We have examined the evolution of microstructure in annealing-induced relaxation process, and investigated the initial stages of thermal crystallization of amorphous Si_0.4C_0.6. Meanwhile, the structure of excess C in the films also has been studied.     

Physical properties of very thin SnS films deposited by thermal evaporation

SnS films with thicknesses of 20-65 nm have been deposited on glass substrates by thermal evaporation. The physical properties of the films were investigated using X-ray diffraction (XRD), scanning electron microscopy, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and ultraviolet-visible-near infrared spectroscopy at room temperature. The results from XRD, XPS and Raman spectroscopy analyses indicate that the deposited films mainly exhibit SnS phase, but they may contain a tiny amount of Sn₂S₃. The deposited SnS films are pinhole free, smooth and strongly adherent to the surfaces of the substrates. The color of the SnS films changes from pale yellow to brown with the increase of the film thickness from 20 nm to 65 nm. The very smooth surfaces of the thin films result in their high reflectance. The direct bandgap of the films is between 2.15 eV and 2.28 eV which is much larger than 1.3 eV of bulk SnS, this is deserving to be investigated further.     

Thermo-hydrodynamics of thin surface films in heterogeneous combustion

Heterogenous reactions under transport control can be modelled in terms of a film of reaction products covering the reaction surface. Such a surface defines a unique direction in space which may be used to classify transport processes as transverse or longitudinal. Since crossed-gradient transport occurs, a Péclet number Pe is introduced, representing the ratio of the velocities characterizing transverse and longitudinal transport, with transverse transport being by film diffusion of some reacting species and longitudinal transport corresponding to film flow as with wetting processes. If the influence of viscosity is taken into account in terms of a Schmidt number Sc, the long-wave approximation for the evolution of thin films on reaction surfaces is shown to be equivalent to a distinguished limit Pe 0, Sc , while keeping 1/ . The long-wave approximation is derived by an application of the method of strained variables which leads to a film equation for the spatio-temporal evolution of the film thickness h which represents the crucial element for a complete solution of the thermo-hydrodynamics of the layer. Since film generation due to chemical reaction and film removal due to evaporation may compensate for certain thicknesses h, surface phases are found to occur which correspond to stationary layers of uniform thickness. The evolution of the surface layer is shown to be a generalized reaction-diffusion process, with surface waves representing dynamical transitions between surface phases.     

薄膜厚度对LiMn2O4薄膜性质的影响

采用溶液沉积法制备不同厚度的LiMn2O4薄膜，用x射线衍射及扫描电子显微镜检测和分析薄膜的物相及形貌；采用恒电流充放电及交流阻抗技术研究LiMn2O4薄膜的电化学性质。结果表明不同厚度的LiMn2O4薄膜均匀，晶粒大小相近，晶粒尺寸在20-50nm之间。当放电电流密度为100μA／cm^2时，不同厚度的LiMn2O4薄膜比容量相差不大，其值在42-47μAh／（cm^2．μm）之间。薄膜循环性能随着薄膜厚度的增加而变差，经50次循环后，薄膜每次循环的容量损失从0．18μm的0．012％升高到1．04μm的0．16％。电化学阻抗表明不同厚度的LiMn2O4薄膜的锂离子扩散系数差别不大，数量级为10^-11cm^2／s。     

交流量热法测量SiO2薄膜的热扩散率

介绍了交流量热法测量薄膜热扩散率的原理和系统组建，用脉宽为纳秒级的超短激光脉冲作为热源，测量了Si衬底上厚度为100nm和500nm的SiO2薄膜水平方向上的热扩散率，实验结果表明该结构的热扩散率比SiO2体材料的要小，并且随着SiO2层厚度的减小，热扩散率也减少。     

AgOx薄膜的形貌、光谱以及激光烧蚀研究

制备了不同氧分压比的AgOx薄膜,对其进行了原子力(AFM)形貌观察,发现分压比0.4时,薄膜的粗糙度最小,均匀性也最好.光谱性质表明:随着分压比的增加,存在着金属向半导体的转变;经过热处理后的共振吸收峰和扫描电(SEM)表明了金属银粒子的析出.不同激光功率下的烧蚀实验表明:在激光照射下存在着两记录(烧蚀)形态,一种是银粒子散布在其间的气泡型;另一种是形成中间烧蚀孔,银粒子在孔附近密集的破裂气泡型.     

GaN薄膜的研究进展

由于GaN薄膜有希望应用在紫外或蓝光发光器件、探测器以及高速场效应晶体管、高温电子器件,GaN材料是当前研究的一个焦点。本文简要介绍了GaN薄膜的制备、衬底选择、掺杂、缓冲层、发光机制和表征等方面的最新进展。指出GaN材料进一步发展需要解决的关键技术问题。     

PZT薄膜厚度对BMT/PZT复合薄膜结构及介电性能的影响

采用液相旋涂法制备了Ba(Mg1/3Ta2/3)O3(BMT)/Pb(Zr0.52Ti0.48)O3(PZT)复合薄膜,研究了PZT薄膜厚度对BMT/PZT复合薄膜结构及介电性能的影响。随着PZT薄膜厚度的增加,BMT/PZT复合薄膜的介电常数呈线性增加。当PZT薄膜的厚度较小时,会明显地增加BMT/PZT复合薄膜的介电损耗;当继续增加PZT薄膜的厚度,介电损耗反而下降直到与BMT薄膜的介电损耗值接近。这是由于PZT的介电常数与介电损耗均明显高于BMT薄膜所致,而异质界面的存在抑制了PZT薄膜中畴壁的运动,使其对复合薄膜介电损耗的影响减弱。研究结果表明,PZT薄膜的引入可以提升BMT薄膜的介电常数而对介电损耗的影响不大。     

ZnO薄膜材料的发光谱

随着人们对ZnO薄膜材料发光特性的不同深入，发现了不同能量位置的多个发光峰，本文对用不同方法制备的ZnO薄膜材料的发光谱、发光特性及其相应的发光机制、国内外研究动态进行了综合评述。介绍了由带间跃迁、激子复合和缺陷能级引起的发光和发光谱特性。     

真空还原制备的VO2热致相变薄膜Raman光谱和红外光谱研究

报道了利用真空还原制备的VO2薄膜的红外透射光谱和Raman光谱,并进行370－900nm波段的光透射测试以及900nm波长的热滞回线特性测试,表明所制备VO2薄膜具有优良的热致相变光学特性,结晶状态不同的薄膜其Raman谱位置有明显改变,室温时的红外光谱表现出较好的红外振动特性。讨论了薄膜结晶状态对Raman位移的影响以及VO2薄膜的红外光谱。     

Photoconductivity of ZnTe thin films at elevated temperatures

Photoconductivity of thermally evaporated ZnTe thin films was studied at different elevated temperatures. A gap type cell configuration with Al electrodes on glass substrates was used. The conductivity was found to obey two distinct conduction mechanisms within the region of applied fields. At low fields the photoconduction is ohmic and at high fields it is of Poole-Frenkel type. With increase of ambient temperatures, the Poole-Frenkel conductivity regions were found to extend to lower fields. The temperature dependence of dark conductivity also was found to be of similar nature. The paper was presented at the 6th Asian Thermophysical Properties Conference (6th ATPC), held at Gauhati University, during 8–11 October 2001.