共查询到20条相似文献,搜索用时 15 毫秒
1.
Jacobs R. N. Stoltz A. J. Robinson E. W. Boyd P. R. Almeida L. A. Dinan J. H. Salamanca-Riba L. 《Journal of Electronic Materials》2004,33(6):538-542
The vision of achieving a completely in-vacuum process for fabricating HgCdTe detector arrays is contingent on the availability
of a vacuumcompatible photolithography technology. One such technology for vacuum photolithography involves the use of amorphous-hydrogenated
Si (a-Si:H) as a photoresist. In this work, we deposit a-Si:H resists via plasma-enhanced chemical-vapor deposition (PECVD)
using an Ar-diluted silane precursor. The resists are then patterned via excimer laser exposure and development etched in
a hydrogen plasma where etch selectivities between unexposed and exposed regions exceed 600:1. To determine the best conditions
for the technique, we investigate the effects of different exposure environments and carry out an analysis of the a-Si:H surfaces
before and after development etching. Analysis via transmission electron microscopy (TEM) reveals that the excimer-exposed
surfaces are polycrystalline in nature, indicating that the mechanism for pattern generation in this study is based on melting
and crystallization. To demonstrate pattern transfer, underlying CdTe films were etched (after development of the resist)
in an electron cyclotron resonance (ECR) plasma, where etch selectivities of approximately 8:1 have been achieved. The significance
of this work is the demonstration of laser-induced poly-Si as an etching mask for vacuum-compatible photolithography. 相似文献
2.
本文介绍了 C_yF_(14)+ O_2等离子刻蚀 a=Si:H/a-C:H 超晶格的工艺原理及方法,简便可行. 相似文献
3.
采用PECVD工艺,在300℃下在50μm厚的Kapton E高分子塑料片上制备了底栅结构a-Si∶H TFT阵列(20×20)。用傅里叶变换红外光谱仪表征了a-Si∶H薄膜的结构,用二探针法和四探针法分别表征了a-Si∶H薄膜和n+a-Si∶H薄膜的电导率。a-Si∶H薄膜中的H(原子数分数)约为15.6%,H主要以Si H和Si H2基团的形式存在,其电导率为8.2×10-7~8.8×10-6S/cm;n+a-Si∶H薄膜的电导率为3.8×10-3S/cm。所制备的TFT具有以下性能:Ioff≈1×10-14A,Ion≈1×10-9A,Ion/Ioff≈105,Vth≈5V,μ≈0.113cm2/(V.s),S≈2.5V/dec,满足TFT-LCD等平板显示器件的开关寻址电路要求。 相似文献
4.
以NH3和SiH4为反应源气体,采用射频等离子体增强化学气相沉积(RF-PECVD)法在多晶硅(p-Si)衬底上沉积了一系列SiN薄膜,并利用椭圆偏振测厚仪、超高电阻-微电流计、C-V测试仪对所沉积的薄膜作了相关性能测试.系统分析了沉积温度和射频功率对SiN薄膜的相对介电常数、电学性能及界面特性的影响.分析表明,沉积温度和射频功率主要是通过影响SiN薄膜中的Si/N比影响薄膜的性能,在制备高质量的p-Si TFT栅绝缘层用SiN薄膜方面具有重要的参考价值. 相似文献
5.
S. S. Ang G. Sreenivas W. D. Brown H. A. Naseem R. K. Ulrich 《Journal of Electronic Materials》1993,22(4):347-352
The effects of nitrogen trifluoride (NF3) on the growth and properties of plasma-enhanced chemical-vapor-deposited diamond-like carbon (DLC) films were investigated.
The addition of NF3 increases the deposition rate of DLC film due presumably to the removal of activated hydrogen species by the fluorine radical
(F−). Diamond-like carbon films deposited in a methane/NF3 mixture have a higher refractive index, a lower bulk resistivity, and a lower optical bandgap compared to films deposited
in pure methane due to a lower hydrogen content in the films. Moreover, the bulk resistivity of methane/NF3 DLC films remains constant for annealing temperatures below 400°C. Thus, DLC films deposited with NF3 are more stable than DLC films deposited without NF3. 相似文献
6.
E. P. G. Smith G. M. Venzor P. M. Goetz J. B. Varesi L. T. Pham E. A. Patten W. A. Radford S. M. Johnson A. J. Stoltz J. D. Bensen J. H. Dinan 《Journal of Electronic Materials》2003,32(7):821-826
A combination of mechanical experiments and fabrication of very-long-wavelength infrared (VLWIR) HgCdTe-infrared detectors
has been used to investigate the interaction between various unit-cell design and dry-etch process variables on final unit-cell
dimensions and detector performance. Etch rate, which determines the process time required to achieve a specified etch depth,
was found to be a function of both the trench width opening used to delineate an individual detector element in a focal-plane
array (FPA) and the mesa profile observed during etching. Current-voltage (I-V) probe data at 78 K demonstrated the successful
fabrication of 30 μm unit-cell, VLWIR-HgCdTe diodes with mesa delineation performed by dry etching. The breakdown performance
of these diodes is sensitive to trench width and dry-etch process time. 相似文献
7.
a—SiNx:H薄膜对a—Si:H TFT阈值电压的影响 总被引:4,自引:0,他引:4
介绍了测定a-Si:HTFT闽值电压的实验方法。重点研究了改变a-SiNx:H薄膜淀积时反应气体NH3/SiH4流速比以及a-SiNx:H膜厚对a-Si:HTFT阈值电压的影响。对实验结果进行了分析。实验结果表明:a-Si:HTFT的阈值电压随a-SiNx:H的膜厚增加而增大;增大X-SiNx:H薄膜淀积时NH3/SiH4气体流速比,可明显减小a-Si:HTFT的阈值电压。 相似文献
8.
XIONG Zhibin WANG Chang''''an XU Zhongyang ZOU Xuemei ZHAO Bofang DAI Yongbing WAN Xinheng 《半导体光子学与技术》1997,(4)
DependenceofThresholdVoltageofa-Si:HTFTona-SiNx:HFilm①XIONGZhibin,WANGChang’an,XUZhongyang,ZOUXuemei,ZHAOBofang,DAIYongbing,W... 相似文献
9.
PECVD a—Si:H薄膜对TFT有源矩阵性能的影响及其淀积工艺研究 总被引:5,自引:1,他引:4
分析了a-Si:HTFT有源层──a-Si:H薄膜质量和厚度对于a-Si:HTFT关键性指标(通断电流比、阈值电压、响应时间、开口率)的影响,深入、详细地研究了PECVD衬底温度、RF功率和频率、气体流量和反应室气压等淀积工艺参数对a—Si:H薄膜组分、结构的影响,并在实验的基础上给出了它们之间的关系曲线,确定了最佳淀积工艺参数,从而获得了高性能的7.5cm372×276象素a-Si:HTFT有源矩阵。 相似文献
10.
N/A 《半导体光子学与技术》1997,3(4):290-295
The relation between threshold voltage for hydrogenated amorphous silicon thin film transistors(a-Si:HTFTs)and deposition conditions for hydrogenated amorphous silicon nitride(a-SiNx:H)films is investigated.It is observed that the threshold voltage,Vth,of a-Si:HTFT increases with the increase of the thickness of a-SiNx:H film,and the threshold voltage is reduced apparently with the increase of NH3/SiH4 gas flow rate ratio. 相似文献
11.
R. E. Hollingsworth C. Dehart Li Wang J. N. Johnson J. D. Benson J. H. Dinan 《Journal of Electronic Materials》1998,27(6):689-693
A process for transferring patterns into HgCdTe epilayers using a hydrogenated amorphous silicon (a-Si:H) photomask has been
demonstrated. a-Si:H films were grown using plasma enhanced chemical vapor deposition (PECVD). A latent image of a projected
mask pattern was created at the a-Si:H surface by ultraviolet enhanced oxidation in the load lock of the PECVD vacuum chamber.
This image was transformed into a mask by hydrogen plasma removal of the unexposed areas. A hydrogen plasma etch selectivity
value greater than 500:1 for oxide and a-Si:H allows patterns as thick as 700 nm to be generated. a-Si:H masks were used to
create arrays of mesas in planar HgCdTe epilayers by etching in an electron cyclotron resonance (ECR) plasma reactor. Etch
selectivity between a-Si:H and HgCdTe during an ECR hydrogen plasma etch was measured to be greater than 18:1. RoA values > 103 were obtained for mid-wavelength infrared diodes made from HgCdTe heterojunctions using a-Si:H masks. 相似文献
12.
关于氢化非晶硅(a-Si:H)中光致亚稳性退化(Staebler-Wronski效应)虽已进行了大量研究,但对其物理机制至今还是不清楚的,已有物理模型都有它自己的困难.本文指出,光激产生的导带电子与价带空穴通过Si-H弱键的无辐射复合时放出的Si-H 局域模振动声子使Si-H键自身断裂而造成硅悬挂键——SW缺陷.该模型可以定性解释我们所知道的重要实验事实. 相似文献
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15.
本文介绍一种研究a-Si:H/a-SiN:H界面层电子积累特性的新方法,所用样品为Cr/a-SiN:H/a-Si:H/(n+)a-Si:H/AI.测试表明,a-Si:H/a-SiN:H界面是一个电子积累层,其电子面密度为3.2×10~(11)/cm~2,并且界面层中的电子面密度随外加电压的增加而线性增加。实验结果与理论分析相一致。 相似文献
16.
报道了碲镉汞干法刻蚀技术的刻蚀速率的一些研究结果。在同样的刻蚀条件下,当刻蚀区域的图形面积过小,刻蚀剂不易进入刻蚀区域,生成物也不易快速转移出去,使刻蚀速率变慢,这种效应可以等效于刻蚀的微负载效应。而当刻蚀区域的面积过大,刻蚀剂很快被消耗,也会使刻蚀速率变慢,这种效应称为负载效应。采用在同一碲镉汞芯片上制作不同刻蚀面积区域进行刻蚀,比较不同刻蚀面积对刻蚀速率的影响。 相似文献
17.
本文首次报道采用重掺杂的氢化非晶硅(n~+a-Si∶H)作发射极的硅微波双极型晶体管的制备和特性.该器件内基区方块电阻2kΩ/□,基区宽度0.1μm,共发射极最大电流增益21(V_(cB)=6V,I_c=15mA),发射极Gummel数G_B值已达1.4×10~(14)Scm~(-4).由S参数测得电流增益截止频率f_s=5.5GHz,最大振荡频率f_(max)=7.5GHz.在迄今有关Si/a-Si HBT的报道中,这是首次报道可工作于微波领域里的非晶硅发射极异质结晶体管. 相似文献
18.
I. Balberg 《Journal of Electronic Materials》1980,9(4):797-818
The measurement of the tunneling conductance and the ac conductance of a tunnelable MOS capacitor enables the determination
of surface states distributions in semiconductors. Carrying out the measurement on hydrogenated amorphous silicon a-Si:H has
revealed a non-uniform states distribution with a peak at about 0.45 eV below the conduction band edge. If the detected states
are considered bulk states they appear to have a density of 1018 − 5×l018 cm−3 eV−1 at this peak. The agreement between the above results and states distributions obtained on a-Si:H alloys from other methods,
and on materials prepared in various deposition systems, indicates that this peak is a universal property of these alloys.
The latter conclusion is shown to be applicable for the determination of the doping efficiency in the alloys. 相似文献
19.
Nitrogen-doped diamond-like carbon (DLC) or amorphous hydrogenated carbon (a-C:H) films were grown by plasma enhanced chemical
vapor deposition using methane and nitrogen gases as precursors. The effects of nitrogen trifluoride (NF3) on these nitrogen-doped DLC films were also investigated. The deposition rate decreases sharply with the addition of nitrogen
in the absence of NFF3 due to dilution, while it increases in the presence of NFF3 due, presumably, to the reduction of activated hydrogen species by the fluorine radical (F϶. X-ray photoelectron spectra
reveal a nitrogen concentration in the range of 9.3 to 13.8% in these DLC films with a C Is electron binding energy of 287-288
eV, indicating the diamond-like structure. Infrared spectra of DLC films indicate the presence of amino groups (N-H) and nitrile
and/or isonitrile (C= N) groups giving strong evidence of sp carbon. Diamond like carbon films deposited in CHF4 +NF4 (with and without NFF3) have a lower refractive index, a lower bulk resistivity, and a lower optical bandgap than films deposited using CHF4 due to a lower hydrogen content in the films. Moreover, the bulk resistivity of these films decreases by over four orders
of magnitude and the optical bandgap decreases from 2.65 eV to about 0.75 eV following annealing at a temperature of 500°C. 相似文献