用于KrF准分子激光光刻的衰减相移掩模

讨论了相移掩模提高光刻分辨力的基本原理,提出了一种抗蚀剂相移器制作衰减相移掩模的新方法,利用自行设计、建立的KrF准分子激光投影光刻实验曝光系统进行了实验研究,给出了实验结果,并与传统光刻方法作了比较.     

用于100nm节点ArF准分子激光光刻的相移掩模技术

用于100nm节点ArF准分子激光光刻的相移掩模(PSM)技术主要有无铬相移掩模(CPM),交替相移掩模(APSM)、衰减相移掩模(AttPSM)和混合相移掩模技术。对这些掩模的基本原理、制作方法及性能比较进行了分析研究。研究表明,无铬相位光刻(CPL)PSM和高透AttPSM 相结合构成的混合掩模最适合用于193nmArF光刻,以产生100nm节点抗蚀剂图形。     

微光刻相移掩模技术研究

本文系统地论述了提高光刻分辨率的相移掩模技术的基本原理、计算模拟和光刻曝光实验 ;给出了模拟和实验结果 ;研究表明 ,只有在一定的临界参数条件下 ,相移掩模才能明显地改善分辨率和工艺宽容度 ;采用无铬相移掩模得到了 0 .2 μm的清晰抗蚀剂图形 ,证明了相移掩模在提高光刻分辨率、延长光刻技术寿命以及推进光刻技术极限发展方面的优良性能     

衰减相移掩模光刻技术研究

论述了衰减相移掩模光刻技术的原理和曝光实验研究,给出了光刻曝光实验部分结果,并与我刻方法作了比较。     

相移掩模和光学邻近效应校正光刻技术

详细地论述了相移掩模提高光刻分辨力和改善焦深的原理。介绍了光学邻近效应校正方法、改善光刻图形质量的机理及邻近效应校正掩模的一些设计问题。     

相移掩模方法及其一维数值模拟

相移掩模方法是一种新的光刻技术，它可以提高现有光刻设备的分辨率，使超大规模集成电路及二元光学的制作迈上一个新台阶。本文介绍了相移掩模方法的基本原理，用部分相干光成象理论分析了用于光刻的投影照相系统的成象特性，导出了一维成象的简化公式，对一维光栅结构进行了计算机数值模拟并给出了模拟结果。     

掩模投影成像干涉光刻研究

掩模投影成像干涉光刻技术以在很小或几乎不增加光刻系统成本的基础上来提高光刻分辨率为目的,充分利用系统的有限孔径,将掩模图形不同的空间频率分别进行传递,最终以高分辨率对掩模成像。本文阐述了IIL的基本原理,介绍了一种实验系统,并给出了部分模拟和实验结果。研究结果表明,掩模投影成像干涉光刻技术比传统投影光刻能够得到更高的光刻分辨率。     

振幅分割无掩模激光干涉光刻的实现方法

无掩模激光干涉光刻中的分束方法一般有波前分割和振幅分割。研究和比较了振幅分割无 掩模激光干涉光刻方法和系统,包括振幅分割双光束干涉系统、三光束干涉系统、液浸式深紫外干涉系统及全自动干涉光刻系统。建立了双光束双曝光干涉光刻实验系统。模拟和实验结果表明,对点阵或孔阵图形,在同样的图形尺度下,无掩模干涉光刻比传统光刻简单得多。     

相移掩模和离轴照明在ArF浸没式光刻中对工艺窗口的影响

研究了交替型相移掩模及离轴照明对65nm分辨率ArF浸没式光刻的影响,在3／4环形照明和3／4四极照明方式下,分别选用传统掩模和交替型相移掩模,研究65nm线宽的密集线条、半密集线条、孤立线条在较大的曝光系统参数范围内,对光刻工艺窗口的改善。并对在不同的照明方式、掩模结构下获得的工艺窗口进行了比较,结果表明：①在较大焦深(DOF)范围内,满足光刻性能要求可以有较大范围的曝光系统参数配置;②相时于传统照明和传统掩模,采用交替型相移掩模或者离轴照明,焦深均可提高100％-150％。     

边缘相移掩模技术

论述了边缘相移掩模的原理、制作方法和工艺步骤，并给出了一些实验结果。     

用于大面积周期性图形制造的激光干涉光刻

用两束或多束相干激光束以不同的组合形式对光致抗蚀剂曝光,可在大面积范围内产生精细的二维周期性图形,这个方法特别适合于产生光电子器件和生电子器件的周期性结构。介绍激光干涉光刻的基本原理,对几种光束组合干涉方法给出了理论推导结果,并进行了计算机模拟。初步的实验结果表明,用激光干扰光刻技术产生大面积的亚微米级周期性孔、柱、锥图形是可行的。该方法不需要掩模、昂贵的光刻成像透镜、新的短波长光源和新型的抗蚀剂,提供了得到高分辨、无限焦深、大面积光刻的可能性。     

Resolution limit for two-dimensional crossed-grating patterns projected by a coherent beam

The resolution limit for two-dimensional crossed-grating patterns created by projecting mask objects by using a coherent beam has been investigated. We consider first two conventional mask types, a binary-amplitude mask and a two-level phase-shifting mask, in analyzing relationships between a diffraction-beam configuration and an image-intensity distribution. Then we derive, as a mask that overcomes the resolution limit of the conventional ones, a four-level phase-shifting structure with which the minimum image period can be reduced to square root(2)/2 time that of the two-level phase-shifting mask.     

制作光纤光栅的相移掩模-双光束干涉曝光方法

介绍将无铬相移掩模技术和双光束干涉曝光技术用于制作纳米级图形光纤光栅的基本原 理和实验系统设计。提出一种用可移动反射镜使写入光束扫描固定在一起的相移掩模和光纤组合体制作光纤光栅的方法,既便于系统调整,增强曝光能量,又可方便制作高分辨力、长尺寸光纤光栅,无论是周期光栅,还是非周期光栅。     

Large area nanorings fabricated using an atomic layer deposition Al(2)O(3) spacer for magnetic random access memory application

We have designed a novel atomic layer deposition (ALD) Al(2)O(3) spacer mask technique for fabricating large area high density nanoscale magnetic rings by photolithography for magnetic random access memory applications. A simple mask design and a low temperature ALD process were utilized to simplify the process. Dry etching of Al(2)O(3) and cobalt was investigated for optimizing the nanostructure dimension control. A ring array with density and dimensions below the limits for photolithography tools has been achieved. The magnetic behavior of the ring array was characterized using a SQUID (superconducting quantum interference device). The switching distribution and effects of interaction among ring arrays were studied by correlating simulation with experimental results.     

Simple, low-cost technique for photolithographic self-aligned top metal contacts to nanowires and nanotubes

We propose a new simple, low-cost method for providing all-round metal contacts to one-dimensional structures such as carbon nanotubes and nanowires on a transparent substrate. The nanostructures are first positioned in place to bridge a electrode gap by dielectrophoresis. The electrode structure is then used as a self-aligned mask during the subsequent photolithography through illumination from the substrate backside. This is followed by metallization and lift-off. Our measurements on multi-walled carbon nanotubes thus contacted show reasonable yield and good electrical contacts for the process carried out on a glass slide as the substrate.     

Direct patterning of three-dimensional periodic nanostructures by surface-plasmon-assisted nanolithography

The technical applications of three-dimensional (3D) nanostructures demand a fabrication technique that is convenient and yet offers design flexibility. We describe here a nanofabrication technique called surface-plasmon-assisted three-dimensional nanolithography (3D-SPAN). By utilizing optical near-field interference patterns generated by surface plasmons (SPs), we have fabricated different 2D/3D periodic polymeric nanostructures in a typical photolithography setup. We have also shown here that the nanostructures fabricated by 3D-SPAN can be controlled easily in terms of size, layout, and defects by designing the SPAN mask. Because of its design flexibility and fabrication convenience, 3D-SPAN could be used to develop "photonics on a chip", where signal processing is carried out by photons instead of electrons and be extended to other applications of direct-writing 3D functional nanostructures.     

微透镜列阵成像光刻调焦方法

本文分析了离焦量对微透镜列阵成像光刻图形质量的影响,给出了系统离焦量的容差.同时提出了一种结构简单、可应用于微透镜列阵成像光刻系统调焦的新方法.并将基于该调焦方法的实验装置应用于微透镜列阵成像光刻系统,进行了光刻实验.实验表明,利用该方法时微透镜列阵成像光刻系统调焦,可得到接近微透镜列阵极限像质的光刻图形.     

用灰度曝光技术改善数字光刻图形轮廓

基于空间光调制器(SLM)数字光刻技术可用于IC掩模制作或直接作为微结构的加工工具,但用数字投影光刻系统加工某些结构的二元图形时,往往难以获得预期的图形轮廓,即图形边缘处有一定畸变,特别是较低缩小倍率时。本文提出优化设计图形边缘灰度的方法来校正光刻图形的畸变。文中分析了数字光刻制作这些二元光刻图形时空间像畸变产生的物理机制,详细讨论了设计图形边缘灰度优化的规则,并以加工圆孔滤波器为例,模拟了它的数字光刻成像过程。结果表明,设计图形的边缘采用灰度曝光可使其空间像畸变减小约8个百分点,光场分布更为均匀。数字灰度曝光技术简单易行,可为改善光刻图形质量提供了新途径。