Compositional dependence of phase structure and electrical properties in (K0.50Na0.50)0.97Bi0.01(Nb1−xZrx)O3 lead-free ceramics

(K_0.50Na_0.50)_0.97Bi_0.01(Nb_1-xZr_x)O₃ (KNBNZ) lead-free ceramics were prepared by the conventional solid-state sintering process. Their phase structure is dependent on the Zr content in the investigated range, and the ceramics endure a phase transition from pseudocubic to orthorhombic with increasing Zr content. Improved piezoelectric properties have been observed when the poling temperature is located at ~100 °C because of the coexistence of orthorhombic and tetragonal phases. Their dielectric and piezoelectric properties were enhanced by doping Zr, the ceramic with x=0.02 showing optimal electrical properties, i.e., d₃₃~161 pC/N, k_p~0.41, Q_m~81, T_c~370 °C, and T_o−t~130 °C. These results show that the KNBNZ ceramic is a promising lead-free piezoelectric material.     

Structure,dielectric and piezoelectric properties of Ba0.90Ca0.10Ti1−xSnxO3 lead-free ceramics

Lead-free piezoelectric ceramics Ba_0.90Ca_0.10Ti_1−xSn_xO₃ have been prepared by a conventional ceramic fabrication technique and the effects of Sn⁴⁺ on the structure, dielectric and piezoelectric properties of the ceramics have been investigated. All the ceramics exhibit a pure perovskite structure. After the substitution of Sn⁴⁺, the crystal structure of ceramics is transformed gradually from a tetragonal to an orthorhombic phase, and becomes a pseudo-cubic phase at x≥0.14. The substitution also decreases the Curie temperature greatly from 138 °C at x=0 to 33 °C at x=0.12, and shifts the orthorhombic–tetragonal phase transition to higher temperatures. Coexistence of the orthorhombic and tetragonal phases is formed in the ceramic at x=0.10, leading to significant improvements in the piezoelectric properties: d₃₃=521 pC/N and k_p=45.5%. Our results also reveal that the ceramics sintered at higher temperatures contain larger grains, and thus exhibit more noticeable tetragonal–orthorhombic phase transition and enhanced ferroelectric and piezoelectric properties.     

Effect of HfO2 content on the microstructure and piezoelectric properties of (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃–xHfO₂ [BNBT–xHfO₂] lead-free ceramics were prepared using the conventional solid-state reaction method. Effects of HfO₂ content on their microstructures and electrical properties were systematically studied. A pure perovskite phase was observed in all the ceramics with x=0–0.07 wt%. Adding optimum HfO₂ content can induce dense microstructures and improve their piezoelectric properties, and a high depolarization temperature was also obtained. The ceramics with x=0.03 wt% possess optimum electrical properties (i.e., d₃₃~168 pC/N, k_p~32.1%, Q_m~130, ε_r~715, tan δ~0.026, and T_d~106 °C, showing that HfO₂-modified BNBT ceramics are promising materials for piezoelectric applications.     

Phase transitions in (1−x)BaZr0.2Ti0.8O3−xBa0.7Ca0.3TiO3 powders and ceramic pellets

The phase transitions in (1−x)BaZr_0.2Ti_0.8O₃−xBa_0.7Ca_0.3TiO₃ (BZT-xBCT) powders and ceramic pellets were studied. It is found that the phase compositions in the pellets are different from that in the powders, which may be caused by the stress in the pellets. The monoclinic phase exists near the morphotropic phase boundary (MPB) in the ceramics. The piezoelectric coefficient (d₃₃) measurement of the ceramics shows that the higher piezoelectric properties are corresponding to higher content of monoclinic phase.     

Composition and poling condition-induced electrical behavior of (Ba0.85Ca0.15)(Ti1−xZrx)O3 lead-free piezoelectric ceramics

Lead-free (Ba_0.85Ca_0.15)(Ti_1−xZr_x)O₃ (BCTZ) piezoelectric ceramics were fabricated by normal sintering in air atmosphere. BCTZ ceramics with x = 0.10 possess a coexistence of tetragonal and rhombohedral phases at ∼40 °C. The Curie temperature of BCTZ ceramics decreases with increasing the Zr content. Piezoelectric properties of BCTZ ceramics are dependent on the poling conditions (i.e., the poling temperature and the poling electric field), and the underlying physical mechanism is illuminated by the phase angle. The BCTZ (x = 0.10) ceramic, which locates at the existence of two phases and is poled at E ∼ 4.0 kV/mm and T_p ∼ 40 °C, exhibits an optimum electrical behavior at a room temperature of ∼20 °C: d₃₃ ∼ 423 pC/N, k_p ∼ 51.2%, 2P_r ∼ 18.86 μC/cm², 2E_c ∼ 0.47 kV/mm, ?_r ∼ 2892, and tan δ ∼ 1.53%.     

Sintering behavior and microwave dielectric properties of a new low-permittivity ceramic system Ca(Mg1−xAlx)(Si1−x/2Alx/2)2O6

The diopside ceramics with a formula of Ca(Mg_1−xAl_x)(Si_1−x/2Al_x/2)₂O₆ (x=0.01–0.3) were synthesized via a traditional solid-state reaction method, and their solid solubility, sintering behavior and microwave dielectric properties were investigated. The results revealed that the solubility limit of Al₂O₃ in Ca(Mg_1−xAl_x)(Si_1−x/2Al_x/2)₂O₆, which is defined as x, was between 0.15 and 0.2, and a second phase of CaAl₂SiO₆ presented when the x value reached 0.2. Appropriate Al³⁺ substitution for Mg²⁺ and Si⁴⁺ could promote the sintering process and lower the densification temperature, and a broadened densification temperature range of 1250–1300 °C was obtained for the compositions of x=0.08–0.15. With the increase of the x value, the dielectric constant (ε_r) increased roughly linearly, and the temperature coefficient of frequency (τ_f) showed a rising trend. The Q×f values increased from 57,322 GHz to 59,772 GHz as the x value increased from 0.01 to 0.08, and then they were saturated in the range of x=0.08–0.2. Further increase of the x value (x≥0.25) deteriorated the microwave dielectric properties. Good microwave dielectric properties of ε_r=7.89, Q×f=59,772 GHz and τ_f=−42.12 ppm/°C were obtained for the ceramics with the composition of x=0.08 sintered at 1275 °C.     

High piezoelectric coefficient of Pr2O3-doped Ba0.85Ca0.15Ti0.90Zr0.10O3 ceramics

Pr₂O₃-doped Ba_0.85Ca_0.15Ti_0.90Zr_0.10O₃ (BCTZ-xPr) ceramics were prepared by the conventional solid-state method. A tetragonal phase is only observed in these ceramics, and the introduction of Pr₂O₃ decreases their sintering temperature without affecting negatively the piezoelectric constant. Enhanced ferroelectric properties were obtained in these BCTZ-xPr ceramics. The ceramic with x=0.06 wt% exhibits a good electrical behavior of d₃₃∼460 pC/N, k_p∼47.6%, ε_r∼4638, and tan δ∼0.015 when sintered at a low temperature of ∼1400 °C. As a result, the BCTZ-xPr ceramic is a promising candidate for lead-free piezoelectric ceramics.     

Dielectric,ferroelectric, and piezoelectric properties in potassium sodium niobate ceramics with rhombohedral–orthorhombic and orthorhombic–tetragonal phase boundaries

A new phase boundary with rhombohedral–orthorhombic and orthorhombic–tetragonal phase boundaries is designed in (K_0.48Na_0.52)NbO₃ by adding Bi_0.5(Na_0.7K_0.2Li_0.1)_0.5ZrO₃ (BNKLZ), where Zr⁴⁺ and (BNKL)²⁺ are respectively used to improve the temperature of a rhombohedral phase and to decrease the temperature of an orthorhombic–tetragonal phase coexistence. These ceramics endure several continuous phase transitions with increasing BNKLZ content, i.e., an orthorhombic phase (0≤x<0.03), orthorhombic–tetragonal phases (x=0.03), orthorhombic–tetragonal and rhombohedral–orthorhombic (O–T and R–O) phase existence (0.03<x≤0.05), a rhombohedral phase (0.05<x≤0.07). The ceramics with O–T and R–O have a better piezoelectric behavior as compared with other phases because of more polarization states, enhanced ε_r and P_r, and a dense microstructure. Moreover, piezoelectric properties could be further optimized by modifying their sintering and poling temperatures. As a result, the construction of O–T and R–O phase coexistence benefits the improvement of piezoelectric properties in KNN-based ceramics.     

Structural and electrical properties of BZT-added BNLT ceramics

Lead free piezoelectric ceramics (1−x)BNLT−xBZT with x=0.00, 0.06, 0.09 and 0.12 were prepared using a two-step mixed oxide method. Dielectric, ferroelectric and piezoelectric properties of the ceramics were improved by the addition of the BZT. XRD results show tetragonal symmetry structure of the BNLT–BZT ceramics. It was found that the tetragonality increases with increasing BZT content. The optimum composition is x=0.09, where the maximum values of the piezoelectric constant d₃₃ (~126 pC/N) and dielectric constant (~2400) were obtained at room temperature. This BNLT–BZT system can be a promising candidate for lead-free piezoelectric ceramics.     

Synthesis and microstructure of (LaSr)MnO3 and (LaSr)FeO3 ceramics by a reaction-sintering process

(La_xSr_1−x)MnO₃ (LSMO) and (La_xSr_1−x)FeO₃ (LSFO) (x = 0.2–0.4) ceramics prepared by a simple and effective reaction-sintering process were investigated. Without any calcination involved, La₂O₃ and SrCO₃ were mixed with MnO₂ (LSMO) or Fe₂O₃ (LSFO) then pressed and sintered directly. LSMO and LSFO ceramics were obtained after 2 and 4 h sintering at 1350–1400 and 1200–1280 °C, respectively. Grain size decreased as La content increased in LSMO and LSFO ceramics.     

Synthesis and properties of (BaxPb1−x)(Zn1/3Nb2/3)O3 relaxor ferroelectric ceramics using a reaction-sintering process

(Ba_xPb_1−x)(Zn_1/3Nb_2/3)O₃ (BPZN; x = 0.06–0.1) relaxor ferroelectric ceramics produced using a reaction-sintering process were investigated. Without any calcination involved, the mixture of raw materials was pressed and sintered directly. BPZN ceramics of 100% perovskite phase were obtained. Highly dense BPZN ceramics with a density higher than 98.5% of theoretical density could be obtained. Maximum dielectric constant K_max 13,500 (at 75 °C), 19,600 (at 50 °C) and 14,800 (at 28 °C) at 1 kHz could be obtained in 6BPZN, 8BPZN and 10BPZN, respectively. Dielectric maximum temperature (T_max) in BPZN ceramics via reaction-sintering process is lower than BPZN ceramics prepared via B-site precursor route.     

Influence of A-site Ba substitution on microwave dielectric properties of (BaxMg1−x)(A0.05Ti0.95)O3 (A=Zr,Sn) ceramics

The microwave dielectric properties of (Ba_xMg_1−x)(A_0.05Ti_0.95)TiO₃ (A=Zr, Sn) ceramics were investigated with regard to substitution of Ba for Mg of A-site. The microwave dielectric properties were correlated with the Ba content. With an increase in Ba content from 0.01 to 0.1, the dielectric constant and the τ_f value increased, but the Q×f value decreased. The sintered (Ba_xMg_1−x)(Zr_0.05Ti_0.95)TiO₃ (called B_xMZT) ceramics had a permittivity in the range of 19.1−20.6, quality factor from 180,000 to 25,000 GHz, and variation in temperature coefficient of resonant frequency from −35 to −39 ppm/°C with increasing composition x. For sintered (Ba_xMg_1−x)(Sn_0.05Ti_0.95)TiO₃ (called B_xMST) ceramics, the dielectric constant increased from 19 to 20.5, Q×f value increased from 120,000 to 37,000 (GHz), and the τ_f value increased from −50 to −3.3 ppm/°C as the x increased from 0.01 to 0.1. When A=Sn and x=0.1, (Ba_0.1Mg_0.9)(Sn_0.05Ti_0.95)TiO₃ ceramics exhibited dielectric constant of 20.5, Q×f value of 37,000 (GHz), and a near-zero τ_f value of −3.3 ppm/°C sintered at 1210 °C for 4 h.     

Enhancement of the dielectric,piezoelectric, and ferroelectric properties in BiYbO3-modified (Ba0.85Ca0.15)(Ti0.9Zr0.1)O3 lead-free ceramics

Lead-free (1−x)(Ba_0.85Ca_0.15)(Ti_0.9Zr_0.1)O₃−xBiYbO₃ [(1−x)BCTZ−xBYO] piezoelectric ceramics in the range of BYO concentrations were prepared by the conventional oxide-mixed method, and the effect of BYO content on their microstructure, crystalline structure, density and electrical properties was investigated. A dense microstructure with large grain was obtained for the ceramics with the addition of BYO. The ceramics with x=0.1% exhibit an optimum electrical behavior of d₃₃~580 pC/N, r~10.9 Ω, k_p~56.4%, and tan δ~1.12% when sintered at a low temperature of ~1350 °C. When the measuring electric field is 40 kV/cm, the well-saturated and square-like P–E loops for the ceramics were observed with P_r~12.2 μC/cm² and E_c~1.83 kV/cm.     

Sintering of glass-added BaZn1/3Nb2/3O3 ceramics

The complex perovskite oxide Ba(Zn_1/3Nb_2/3)O₃ (BZN) has been studied for its attractive dielectric properties which place this material interesting for applications as multilayer ceramics capacitors or hyperfrequency resonators. This material is sinterable at low temperature with combined glass phase–lithium salt additions, and exhibits, at 1 MHz very low dielectric losses combined with relatively high dielectric constant and a good stability of this later versus temperature. The 2 wt.% of ZnO–SiO₂–B₂O₃ glass phase and 1 wt.% of LiF-added BZN sample sintered at 900 °C exhibits a relative density higher than 95% and attractive dielectric properties: a dielectric constant ?_r of 39, low dielectrics losses (tan(δ) < 10⁻³) and a temperature coefficient of permittivity τ_? of 45 ppm/°C⁻¹. The 2 wt.% ZnO–SiO₂–B₂O₃ glass phase and 1 wt.% of B₂O₃-added BZN sintered at 930 °C exhibits also attractive dielectric properties (?_r = 38, tan(δ) < 10⁻³) and it is more interesting in terms of temperature coefficient of the permittivity (τ_? = −5 ppm/°C). Their good dielectric properties and their compatibility with Ag electrodes, make these ceramics suitable for L.T.C.C applications.     

Enhanced ferroelectric properties in (Ba1−xCax)(Ti0.94Sn0.06)O3 lead-free ceramics

Lead-free (Ba_1−xCa_x)(Ti_0.94Sn_0.06)O₃ (BCST) (x = 0.01-0.04) ceramics were prepared using a solid-state reaction technique. The effects of Ca content on the phase structure and electrical properties of the BCST ceramics were investigated. High piezoelectric coefficient of d₃₃ = 440 pC/N, planar electromechanical coupling factor of k_p = 45% and dielectric constant ?_r = 6900 were obtained for the samples at x = 0.03. At room temperature, a polymorphic phase transition (PPT) from orthorhombic phase to tetragonal phase was identified in the composition range of 0.02 < x < 0.04.     

Effects of Sb content on electrical properties of lead-free piezoelectric (K0.4425Na0.52Li0.0375) (Nb0.9625−xSbxTa0.0375)O3 ceramics

Lead-free (K_0.4425Na_0.52Li_0.0375) (Nb_0.9625−xSb_xTa_0.0375)O₃ piezoelectric ceramics were prepared by the conventional sintering method. The effects of the Sb content on the phase structure, microstructure, dielectric, piezoelectric, and ferroelectric properties of the (K_0.4425Na_0.52Li_0.0375) (Nb_0.9625−xSb_xTa_0.0375)O₃ ceramics were investigated. The much higher Pauling electronegativity of Sb compared with Nb makes the ceramics more covalent. By increasing x from 0.05 to 0.09, all samples exhibit a single perovskite structure with an orthorhombic phase over the whole compositional range, and the bands in the Raman scattering spectra shifted to lower frequency numbers. The grain growth of the ceramics was improved by substituting Sb⁵⁺ for Nb⁵⁺. Significantly, the (K_0.4425Na_0.52Li_0.0375) (Nb_0.8925Sb_0.07Ta_0.0375)O₃ ceramics show the peak values of the piezoelectric coefficient (d₃₃), electromechanical coupling coefficient (k_p), and dielectric constant (?), which are 304 pC/N, 48% and 1909, respectively, owing to the densest microstructure of typical bimodal grain size distributions. Besides, the underlying mechanism for variations of the electrical properties due to Sb⁵⁺ substitution was explained in this work.     

High energy-storage properties of [(Bi1/2Na1/2)0.94 Ba0.06] La(1−x) ZrxTiO3 lead-free anti-ferroelectric ceramics

Energy-storage properties of [(Bi_1/2Na_1/2)_0.94Ba_0.06]La_(1−x)Zr_xTiO₃ (BNT-BLZT, x=0, 0.02, 0.04, and 0.06) lead-free anti-ferroelectric ceramics fabricated via the conventional sintering technique were first investigated. Calculation from the X-ray diffraction results reveals that BNT-BLZT ceramic possesses a single perovskite structure phase. In addition, the P–E hysteresis loops measured at room temperature show that the BNT-BLZT (x=0.02) ceramics obtain the maximum P value of 37.5 μC/cm² and the largest energy-storage density W_max is 1.58 J/cm³. The temperature dependence of dielectric permittivity ε_r and dielectric loss tanδ illustrate that the addition of Zr can improve the piezoelectric properties of BT-BLZT ceramics. These properties indicate that BNT-BLZT ceramics might be a promising lead-free anti-ferroelectric material for energy storage application.     

Microwave dielectric properties of SnO2-doped CaSiO3 ceramics

SnO₂-doped CaSiO₃ ceramics were successfully synthesized by a solid-state method. Effects of different SnO₂ additions on the sintering behavior, microstructure and dielectric properties of Ca(Sn_1−xSi_x)O₃ (x=0.5–1.0) ceramics have been investigated. SnO₂ improved the densification process and expanded the sintering temperature range effectively. Moreover, Sn⁴⁺ substituting for Si⁴⁺ sites leads to the emergence of Ca₃SnSi₂O₉ phase, which has a positive effect on the dielectric properties of CaO–SiO₂–SnO₂ materials, especially the Qf value. The Ca(Sn_0.1Si_0.9)O₃ ceramics sintered at 1375 °C possessed good microwave dielectric properties: ε_r =7.92, Qf =58,000 GHz and τ_f=−42 ppm/°C. The Ca(Sn_0.4Si_0.6)O₃ ceramics sintered at 1450 °C also exhibited good microwave dielectric properties of ε_r=9.27, Qf=63,000 GHz, and τ_f=−52 ppm/°C. Thus, they are promising candidate materials for millimeter-wave devices.     

Sintering and electrical properties of La-modified (Na0.52K0.45Li0.03)1−3xLax(Nb0.88Sb0.09Ta0.03)O3 lead-free ceramics

(Na_0.52K_0.45Li_0.03)_1−3xLa_x(Nb_0.88Sb_0.09Ta_0.03)O₃ (NKLL_xNST) lead-free ceramics were prepared by normal sintering and their dielectric and piezoelectric properties were investigated. The X-ray methods indicate that the NKLL_xNST ceramics with x≤0.003 present a pure perovskite phase at room temperature. The bulk density of NKLL_xNST ceramics increases with proper amount of La₂O₃ contents, and reaches its highest value of 4.544 g/cm³ with the addition of 0.3 mol% La₂O₃. At x=0.003, remnant polarization P_r, piezoelectric constant d₃₃ and planar mode electromechanical coupling factor k_p of NKLL_xNST ceramics reach the highest values of 37.80 μC/cm², 346 pC/N and 40%, respectively, exhibiting excellent “soft” piezoelectric characteristics, demonstrating a tremendous potential of the compositions studied for device applications.     

Preparation, characterization and electrical conductivity studies of NdYb1−xGdxZr2O7 (0 ≤ x ≤ 1.0) ceramics

Several compositions of NdYb_1−xGd_xZr₂O₇ (0 ≤ x ≤ 1.0) ceramics were prepared by pressureless-sintering method at 1973 K for 10 h in air. The relative density, microstructure and electrical conductivity of NdYb_1−xGd_xZr₂O₇ ceramics were analyzed by the Archimedes method, X-ray diffraction, scanning electron microscopy and impedance plots measurements. NdYb_1−xGd_xZr₂O₇ (0 ≤ x ≤ 0.3) ceramics have a single phase of defect fluorite-type structure, and NdYb_1−xGd_xZr₂O₇ (0.7 ≤ x ≤ 1.0) ceramics exhibit a single phase of pyrochlore-type structure; however, the NdYb_0.5Gd_0.5Zr₂O₇ composition shows mixed phases of both defect fluorite-type and pyrochlore-type structures. The measured values of the grain conductivity obey the Arrhenius relation. The grain conductivity of each composition in NdYb_1−xGd_xZr₂O₇ ceramics gradually increases with increasing temperature from 673 to 1173 K. NdYb_1−xGd_xZr₂O₇ ceramics are oxide-ion conductor in the oxygen partial pressure range of 1.0 × 10⁻⁴ to 1.0 atm at all test temperature levels. The highest grain conductivity value obtained in this work is 1.79 × 10⁻² S cm⁻¹ at 1173 K for NdYb_0.3Gd_0.7Zr₂O₇ composition.