Effect of nickel doping on structural,optical, electrical and ethanol sensing properties of spray deposited nanostructured ZnO thin films

Undoped and nickel (Ni)-doped ZnO thin films were spray deposited on glass substrates at 523 K using 0.1 M of zinc acetate dihydrate and 0.002–0.01 M of nickel acetate tetrahydrate precursor solutions and subsequently annealed at 723 K. The effect of Ni doping in the structural, morphological, optical and electrical properties of nanostructured ZnO thin film was investigated using X-ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), UV–vis Spectrophotometer and an Electrometer respectively. XRD patterns confirmed the polycrystalline nature of ZnO thin film with hexagonal wurtzite crystal structure and highly oriented along (002) plane. The crystallite size was found to be increased in the range of 15–31 nm as dopant concentration increased. The SEM image revealed the uniformly distributed compact spherical grains and denser in the case of doped ZnO thin films. All the films were highly transparent with average transmittance of 76%. The measured optical band gap was found to be varied from 3.21 to 3.09 eV. The influence of Ni doping in the room temperature ethanol sensing characteristics has also been reported.     

Effects of tungsten thickness and annealing temperature on the electrical properties of W-TiO2 thin films

TiO₂ thin films were prepared by RF magnetron sputtering onto glass substrates and tungsten was deposited onto these thin films (deposition time 15-60 s) to form W-TiO₂ bi-layer thin films. The crystal structure, morphology, and transmittance of these TiO₂ and W-TiO₂ bi-layer thin films were investigated. Amorphous, rutile, and anatase TiO₂ phases were observed in the TiO₂ and W-TiO₂ bi-layer thin films. Tungsten thickness and annealing temperature had large effects on the transmittance of the W-TiO₂ thin films. The W-TiO₂ bi-layer thin films with a tungsten deposition time of 60 s were annealed at 200 °C-400 °C. The band gap energies of the TiO₂ and the non-annealed and annealed W-TiO₂ bi-layer thin films were evaluated using (αhν)^1/2 versus energy plots, showing that tungsten thickness and annealing temperature had major effects on the transmittance and band gap energy of W-TiO₂ bi-layer thin films.     

Effect of iodine incorporation on the electrical properties of amorphous conducting carbon films

In this work, the influence of iodine incorporation on the electrical properties of amorphous conducting carbon films, prepared by the vapor phase pyrolysis of maleic anhydride, is reported and discussed. X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies reveal structural changes in the system. The anomalous behavior in the electrical properties of the intercalated system at low temperatures is investigated. The system shows a positive temperature coefficient of resistance (TCR) at low temperatures, which suggests reasons for the induced ordering of the system at low temperatures with the iodine incorporation. Also, a systematic increase in the conductivity of the sample is observed. The crossover temperature depends on the disorder in the system. The results indicate the possibility of metal-insulator (M-I) transition as a function of preparation temperature, iodine concentration and magnetic field.     

Structural,optical and electrical properties of low temperature grown undoped and (Al,Ga) co-doped ZnO thin films by spray pyrolysis

Aluminum and gallium co-doped ZnO (AGZO) thin films were grown by simple, flexible and cost-effective spray pyrolysis method on glass substrates at a temperature of 230 °C. Effects of equal co-doping with aluminum (Al) and gallium (Ga) on structural, optical and electrical properties were investigated by X-ray diffraction (XRD), UV–vis–NIR spectrophotometry and Current–Voltage (I–V) measurements, respectively. XRD patterns showed a successful growth with high quality polycrystalline films on glass substrates. The predominant orientation of the films is (002) at dopant concentrations ≤2 at% and (101) at higher dopant concentrations. Incorporation of Al and Ga to the ZnO crystal structure decreased the crystallite size and increased residual stress of the thin films. All films were highly transparent in the visible region with average transmittance of 80%. Increasing doping concentrations increased the optical band gap, from 3.12 to 3.30 eV. A blue shift of the optical band gap was observed from 400 nm to 380 nm with increase in equal co-doping. Co-doping improved the electrical conductivity of ZnO thin films. It has been found from the electrical measurements that films with dopant concentration of 2 at% have lowest resistivity of 1.621×10⁻⁴ Ω cm.     

Physical properties of La-doped NiO sprayed thin films for optoelectronic and sensor applications

Lanthanum-doped nickel oxide NiO:La thin films were deposited onto glass substrates at 450 °C, by the spray pyrolysis technique using nickel and lanthanum chlorides as precursors. These films belonging to cubic structure, crystallize preferentially along (111) plane. First, Raman study shows the presence of bands corresponding to NiO structure. The same study confirms the presence of both Ni(OH)₂ and LaNiO₃ as secondary phases. Moreover, using SEM observations, all samples exhibit porous microstructures with rough surfaces and spherical nanoparticles of about 40 nm as size. Second, NiO:La films present a direct band gap energy value lying in the range of 3.63–3.84 eV. Also, the effect of the La incorporation in NiO matrix on the disorder is studied in terms of Urbach energy. Some optical constants (refractive index, extinction coefficient, dielectric constants, and dispersion parameters) are reached. On the other hand, the photoluminescence spectroscopy reveals the presence of peaks related to the electronic transition of the Ni²⁺ ions and others confirming the presence of some defects in NiO matrix in terms of La content. Finally, it has been found that La doping allows the improvement of the electrical conductivity as well as Haacke’s figure of merit of NiO sprayed thin films by at least, three orders of magnitude.     

Improved physical properties of Al-doped ZnO thin films deposited by unbalanced RF magnetron sputtering

Room temperature Al-doped ZnO (AZO) thin films with improved crystalline and optical properties were grown on normal glass substrates using unbalanced RF magnetron sputtering technique. To modify the plasma density towards the substrate and enhance the crystalline nature, an additional magnetic field ranging from 0 to 6.0 mT has been applied to the AZO target by proper tuning of solenoid coil current from 0 to 0.2 A respectively, which plays a significant role for controlling the physical properties of AZO films. The results from XRD studies indicate that all AZO films were composed of hexagonal wurtzite structure with better crystal quality through the applied magnetic field, ZnO (002) plane as a preferred growth. Furthermore, XPS studies suggested that symmetric chemical shifts in the binding energies for the Zn 2p and O1s levels with applied magnetic field. SEM analysis revealed the formation of a smooth, homogeneous and dense morphological surface with applied magnetic field. From AFM analysis, it was observed that the applied magnetic field strongly influenced the grain size and the films showed decreasing tendency in electrical resistivity. Films exhibited superior optical transmittance more than 94% in the visible region essentially due to the formation of better crystalline nature. The results indicate that improved band gap from 3.10 to 3.15 eV with additional magnetic field varied from 0 to 6.0 mT respectively.     

Effect of substrate temperature on microstructure and optical properties of nanocrystalline alumina thin films

Aluminum oxide (Al₂O₃) thin films were deposited on silicon (100) and quartz substrates by pulsed laser deposition (PLD) at an optimized oxygen partial pressure of 3.0×10^?3 mbar in the substrate temperatures range 300–973 K. The films were characterized by X-ray diffraction, transmission electron microscopy, atomic force microscopy, spectroscopic ellipsometry, UV–visible spectroscopy and nanoindentation. The X-ray diffraction studies showed that the films deposited at low substrate temperatures (300–673 K) were amorphous Al₂O₃, whereas those deposited at higher temperatures (≥773 K) were polycrystalline cubic γ-Al₂O₃. The transmission electron microscopy studies of the film prepared at 673 K, showed diffuse ring pattern indicating the amorphous nature of Al₂O₃. The surface morphology of the films was examined by atomic force microscopy showing dense and uniform nanostructures with increased surface roughness from 0.3 to 2.3 nm with increasing substrate temperature. The optical studies were carried out by ellipsometry in the energy range 1.5–5.5 eV and revealed that the refractive index increased from 1.69 to 1.75 (λ=632.8 nm) with increasing substrate temperature. The UV–visible spectroscopy analysis indicated higher transmittance (>80%) for all the films. Nanoindentation studies revealed the hardness values of 20.8 and 24.7 GPa for the films prepared at 300 K and 973 K respectively.     

Thickness effects on structures and electrical properties of lead zirconate titanate thick films

PbZr_0.52Ti_0.48O₃ thick films with thickness of 1–6 μm have been prepared by a polymer-assisted MOD process. The polymer, poly(vinyl acetate) (PVAc) was introduced into PZT precursor solutions. The grain size increased from 30 nm to 100 nm with an increase of the additive amount of PVAc. Meanwhile, the grains grew larger (in a range of 100–500 nm) and the surface of the films became rougher with increasing film thickness. This promotes the structural relaxation and prevents cracking formation. The critical thickness at which the film begins to crack increases significantly. The dielectric constant and remanent polarization (P_r) increased from 1070 to 1490 and from 36.1 μC/cm² to 52.4 μC/cm², respectively, and the coercive field (E_c) decreased from 57.3 kV/cm to 41.3 kV/cm as the film thickness increased from 0.95 μm to 6.02 μm. PZT thick films prepared in this study are promising materials for MEMS applications.     

Effect of post annealing treatment on electrochromic properties of spray deposited niobium oxide thin films

Niobium oxide thin films were deposited on the glass and fluorine doped tin oxide (FTO) coated glass substrates using simple and inexpensive spray pyrolysis technique. During deposition of the films various process parameters like nozzle to substrate distance, spray rate, concentration of sprayed solution were optimized to obtain well adherent and transparent films. The films prepared were further annealed and effect of post annealing on the structural, morphological, optical and electrochromic properties was studied. Structural and morphological characterizations of the films were carried out using scanning electron microscopy, atomic force microscopy and X-ray diffraction techniques. Electrochemical properties of the niobium oxide thin films were studied by using cyclic-voltammetry, chronoamperometry and chronocoulometry.     

Effects of the annealing atmosphere on the microstructure and properties of BiFe0.99Zn0.01O3 films

BiFe_0.99Zn_0.01O₃ (BFZO) films were annealed in different atmospheres (Air, N₂ and O₂) on ITO/glass substrates. The influences of the different annealing atmospheres on the oxygen vacancy concentration, microstructure, ferroelectric behavior, leakage current, leakage mechanism, aging and dielectric performance of the BFZO films were studied. The crystallization and grain development for the sample annealed in an O₂ atmosphere improved, and the concentrations of the Fe²⁺ and oxygen vacancies were the lowest among the samples studied herein. The BFZO film had the lowest leakage current density and the best ferroelectric performance in an O₂ annealing atmosphere among the samples studied herein, and the leakage was due to the F-N tunneling effect mechanism. From the perspective of the volume effect, the aging model was established, and the aging mechanism of the BFZO films was discussed in depth. Compared with Air and N₂, the annealed film in O₂ exhibited no obvious aging.     

Engineering of morphological,optical, structural,photocatalytic and catalytic properties of nanostructured CuO thin films fabricated by reactive DC magnetron sputtering

Nanostructured thin films of CuO were deposited on silica glass substrates using reactive DC magnetron sputtering technique. Microstructural, morphological, optical, catalytic and photocatalytic properties of the prepared CuO thin films were examined using FESEM, AFM, Rutherford backscattering spectrometry, XRD, XPS, UV–Vis absorption and PL spectroscopy. FESEM showed nanostructures in the thin films, which were confirmed to be of monoclinic CuO by XRD analysis. Substrate temperature variation (40 °C, 100 °C and 300 °C) was found to significantly alter the optical, morphological, photocatalytic and structural properties of the CuO nanostructured thin film coatings. FESEM and AFM analyses showed decrease in size of nanostructures and surface roughness increase with increase in substrate temperature. Increase in UV–Vis absorbance and PL intensity of CuO thin films with decrease in crystallite size were noticed as the substrate temperature was increased. The prepared nanostructured CuO thin films exhibited highly enhanced photocatalytic activities and degraded dyes (MB and MO) in water in just 40 min under solar exposure and catalytic transformation of 4-nitrophenol (4-NP) took place in just 15 min. The developed CuO nanostructured thin film coatings are very promising for large scale, practical and advanced catalytic reduction of toxic 4-NP and photocatalytic applications in solar driven water purification.     

Anomalous electrical transport properties of amorphous carbon films on Si substrates

Amorphous carbon (a-C) films are deposited on n-Si substrates at different temperatures using pulsed laser deposition. Some anomalous current-voltage (I-V) characteristics of the a-C/n-Si are reported. The films deposited at 27 °C have an apparent voltage-induced switch effect, and the value of the switch voltage decreases with increasing temperature. However, the I-V characteristics of the a-C/n-Si deposited at 300 °C and 500 °C are completely different from those deposited at 27 °C. The anomalous I-V characteristics should be of interest for various applications such as field effect devices. In addition, the magnetoresistance (MR) and the resistance of the a-C/n-Si have been studied. Finally, we interpret the anomalous I-V characteristics and MR observed by use of energy band theory.     

Properties of solution-processed MgInZnO semiconductor thin films and photodetectors fabricated at a low temperature using UV-assisted thermal annealing

Ultraviolet (UV) irradiation-assisted thermal annealing is used for the fabrication of Mg doped InZnO (MIZO) semiconductor thin films and metal-semiconductor-metal (MSM) type photodetectors on alkali-free glasses at a low temperature of 300 °C. In this study, the effects of UV irradiation time on the structural features and the optical and electrical properties of sol-gel derived MIZO thin films were investigated, and the photoresponse properties of MIZO photodetectors fabricated using UV-assisted thermal annealing (UV-TA) and conventional thermal annealing (CTA) were compared. The molar ratio of In:Zn was fixed at 3:2, and the Mg content was maintained at 20 at% ([Mg]/[In+Zn]) in the precursor solution. After a spin-coating and drying procedure was performed twice, the dried sol-gel films were heated on a hotplate at 300 °C and exposed to UV irradiation in ambient air. The UV irradiation time was adjusted to 1, 2, 3, and 4 h. All annealed MIZO thin films had a dense microstructure, uniform film thickness, and flat surface and exhibited good optical transmittance (> 86.0%). The mean resistivity decreased with increasing irradiation time, and the samples irradiated for 4 h exhibited the lowest mean resistivity of 4.4×10² Ω-cm. Current-voltage (I-V) characteristics showed that the MIZO photodetectors operated in the photoconductive mode. Under illumination with UVC light, the MIZO photodetectors exhibited an I_light-to-I_dark ratio of 7.7 × 10² and had a photoresponsivity of 5.0 A/W at a bias of 5 V.     

Influence of annealing atmosphere on the structure, resistivity and transmittance of InZnO thin films

Dependence of the electrical and optical properties of In₂O₃–10 wt% ZnO (IZO) thin films deposited on glass substrates by RF magnetron sputtering on the annealing atmosphere was investigated. The electrical resistivities of indium zinc oxide (IZO) thin films deposited on glass substrate can be effectively decreased by annealing in an N₂ + 10% H₂ atmosphere. Higher temperature (200 °C) annealing is more effective in decreasing the electrical resistivity than lower temperature (100 °C) annealing. The lowest resistivity of 6.2 × 10⁻⁴ Ω cm was obtained by annealing at 200 °C in an N₂ + 10% H₂ atmosphere. In contrast, the resistivity was increased by annealing in an oxygen atmosphere. The transmittance of IZO films is improved by annealing regardless of the annealing temperature.     

Effect of hydration on the properties of lanthanum oxide and lanthanum aluminate thin films

The properties of lanthanum oxide films and lanthanum aluminate films were investigated after dipping the films in DI-water. The La₂O₃ film showed rapid dissolution in DI-water and a swift decrease in thickness resulting in an increased leakage current density. The LAO film showed almost no changes in thickness due to the formation of a layer, preventing dissolution. It was revealed that the changes in the films’ oxygen contents during the hydration process affected the films’ dielectric constants. The LAO films showed better hydration resistance characteristics, which are typically more suitable for conventional semiconductor manufacturing processes.     

Improved photoluminescence emission and gas sensor properties of ZnO thin films

In this article, we report a comparative study of the influence of pressure-assisted (1.72 MPa) versus ambient pressure thermal annealing on both ZnO thin films treated at 330 °C for 32 h. The effects of pressure on the structural, morphological, optical, and gas sensor properties of these thin films were investigated. The results show that partial preferential orientation of the wurtzite-structure ZnO thin films in the [002] or [101] planes is induced based on the thermal annealing conditions used (i.e., pressure assisted or ambient pressure). UV–vis absorption measurements revealed a negligible variation in the optical -band gap values for the both ZnO thin films. Consequently, it is deduced that the ZnO thin films exhibit different distortions of the tetrahedral [ZnO₄] clusters, corresponding to different concentrations of deep and shallow level defects in both samples. This difference induced a variation of the interface/bulk-surface, which might be responsible for the enhanced optical and gas sensor properties of the pressure-assisted thermally annealed film. Additionally, pressure-assisted thermal annealing of the ZnO films improved the H₂ sensitivity by a factor of two.     

Fabrication of CaLa4(Zr0.05Ti0.95)4O15 thin films by RF magnetron sputtering

Crystalline CaLa₄(Zr_0.05Ti_0.95)₄O₁₅ thin films deposited on n-type Si substrates byRF magnetron sputtering at a fixed RF power of 100 W, an Ar/O₂ ratio of 100/0, an operating pressure of 3 mTorr, and different substrate temperatures were investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction and atomic force microscopy were sensitive to the deposition conditions, such as the substrate temperature. The diffraction pattern showed that the deposited films had a polycrystalline microstructure. As the substrate temperature increased, the quality of the CaLa₄(Zr_0.05Ti_0.95)₄O₁₅ thin films improved, and the kinetic energies of the sputtered atoms increased, resulting in a structural improvement of the deposited CaLa₄(Zr_0.05Ti_0.95)₄O₁₅ thin films. A high dielectric constant of 16.7 (f=1 MHz), a dissipation factor of 0.19 (f=1 MHz), and a low leakage current density of 3.18×10⁻⁷ A/cm² at an electrical field of 50 kV/cm were obtained for the prepared films.     

Preparation and properties of porous BaTiO3 nanostructured ceramics produced from cuboidal nanocrystals

The preparation and properties of BaTiO₃ nanostructured ceramics with porosity level in the range of percolation limit (33% and 37% porosity) produced by partial sintering of cubic nanoparticles are presented. Hydrothermally synthesized cuboid-like particles were produced by using Field-Assisted Sintering Technique facility in which temperature and pressure were selected to ensure the consolidation of mechanically stable porous nanoceramics, while preserving as much as possible the starting grain shape. Nanosized grains in the range of (10–40) nm and multiscale porosity ranging from a few nm to hundreds of nm were observed in the sintered ceramics. The dielectric constant of porous nanoceramics assumes low values of ~280–320 and shows a flat thermal response typical to nanostructured ceramics, without a net ferroelectric-paraelectric peak, followed by a Curie-Weiss dependence in the paraelectric state, with negative Curie Weiss temperatures and lowered Curie constant, as result of porosity and ultrafine grain size. A strong conductivity relaxation around room temperature related to air-ceramic interface phenomena indicated a possible sensitivity of these ceramics for gas sensing. Preliminary qualitative tests with saturated acetone vapours have shown a good response of both resistive and reactive components of such porous BaTiO₃ nanoceramics and possible gas sensing interface-related mechanisms were discussed.