基于氧化石墨烯功能材料提高PEDOT:PSS电极性研究

基于聚(3,4-乙烯二氧噻吩)-聚苯乙烯磺酸(PE DOT:PSS)/氧化石墨烯(GO)混合溶液,利用旋涂法制 备了高电导率透明阳极,并采用硫酸(H₂SO₄)浸渍处理的方式,使其导电特性进一步 增强。采用最佳方式 处理的PEDOT:PSS/GO混合薄膜在厚度为40 nm时,其方阻为80 Ω/□,在550 nm时的透过率达到87.7％。 基于表面形貌的AFM图,吸收光谱和拉曼光谱,在少量氧化石墨烯掺杂和硫酸处理后,PSS －和PEDOT⁺链 相分离,使得PEDOT:PSS的结构发生了变化,提高了混合薄膜的电导率。与ITO和纯PEDOT: PSS分 别作为阳极的OLED器件相比,采用优化的PEDOT:PSS/GO混合薄膜作为阳极时的OLED器件具有 最低 的启亮电压和最高的电流效率,其最大亮度是纯PEDOT:PSS作为阳极的OLED的1.7倍。较高 的透过率, 电导率和HOMO能级,尤其是表面形貌的改变都有利于PEDOT:PSS/GO阳极OLED器件性能的改善 。     

聚3,4-乙撑二氧噻吩(PEDOT)-氧化石墨烯复合电极在有机发光二极管中的应用

通过将氧化石墨烯(Graphene Oxide,GO)与十二烷基苯磺酸钠(Sodium Dodecyl Benzene Sulfonate,SDBS)作为填料混入聚3,4-乙撑二氧噻吩∶聚苯乙烯磺酸(PEDOT∶PSS)溶液中制备了高透光率和低方块电阻的透明导电薄膜.当氧化石墨烯与PEDOT∶PSS质量比为0.02％时,薄膜获得了最佳的导电率,电阻为85 Ω/口,在550 nm的光波长下透光率为87％.采用不同掺杂比例的薄膜作为电极制备了有机发光二极管(OLED)器件,相比于常用的ITO电极,复合薄膜作为阳极更有利于空穴的注入和传输,所制备的器件能够得到更优的性能.这些结果表明PEDOT∶PSS和氧化石墨烯复合电极有望取代柔性OLED器件中的ITO阳极.     

具有PEDOT∶PSS/HAT-CN双空穴注入层的高效柔性OLED器件

为了研究不同的空穴注入层修饰柔性衬底对柔性OLED器件性能的影响,本文采用HAT-CN、PEDOT∶PSS、PEDOT∶PSS/HAT-CN 3种空穴注入层制备柔性OLED器件。设计的器件结构为PET/ITO/HIL/TAPC (60nm)/CBP∶Ir(ppy)3(20nm,10%)/TmPyPB(45nm)/Liq(2nm)/Al(100nm)。采用旋涂的方法制备了PEDOT∶PSS,其余有机层及阴极采用真空蒸镀法制备。结果表明,采用PEDOT∶PSS/HAT-CN复合薄膜作为空穴注入层的柔性OLED器件性能最优。该器件的最大电流效率和最大功率效率分别为84cd/A和76lm/W。研究表明,经PEDOT∶PSS修饰的柔性衬底表面更为连续及平滑,不容易使器件发生漏电及短路现象;同时PET/ITO/PEDOT∶PSS/HATCN复合薄膜在绿光波段有较高的透过率,可以提高器件的出光率;另外该双空穴注入结构使器件内部载流子的注入处于动态平衡状态,增加了电子和空穴载流子的复合概率。     

MoO3修饰氧化石墨烯作为空穴注入层影响研究

研究了MoO₃修饰氧化石墨烯(GO)作为空穴注入层的影响。采用旋涂的方法制备了GO, 再真空蒸镀修饰层MoO₃,得到了空穴注入能力强和透过率高的复合薄膜。MoO₃的厚分 别采用0、3、5和8nm。通过优化MoO₃的厚度发现,当MoO₃的厚为5nm时,复合薄膜 的透过率达到最大值,在 550nm的光波长下透光率为88%,且此时采用 复合薄膜作为空穴注入层制备的结构为 ITO/GO/MoO₃(5nm)/NPB(40nm)/Alq₃(40nm)/LiF(1nm)/Al(100nm)的有机电致发光器件(OLED)性能 最佳。通过对OLED进一步的优化,改变Alq₃的厚度,分别取50、60和70nm,测量其电压 、电流、亮度、色坐标和电致发光(EL)光谱等参数发现,当Alq₃的厚为50nm时器件性能最 佳。最终制备了结构为ITO/GO/MoO₃(5nm)/NPB(50nm)/Alq₃(50nm)/LiF(1nm)/Al(100 nm)的OLED,在电压为10V时,最大电流效率达到5.87cd/A,与GO单独作为空穴注入层制备的器件相比,提高了50%。     

含镁多元合金阴极绿色磷光有机电致发光器件

为进一步提高有机电致发光器件(OLED)电子载流 子的注入水平,简化制备工艺,采用Ca:Mg:Al三元合金作为OLED阴极,制备了结构为ITO/Mo O₃/NPB/TCTA/CBP:GIr1/TPBi/Alq₃/Mg(x%):Ca:Al的绿色磷 光OLED,分析了Mg在提高器件电子注入水平、平衡载流子浓度中的作 用及其原理。实验通过优化合金阴极中Mg的含量,得到了亮度为41830cd/m²、电流效率稳定在26cd/m²左右的高效稳定的绿色磷光O LED。     

衬底温度对ITO/Ga2O3深紫外透明导电薄膜性能的影响

用磁控溅射的方法在石英玻璃上制备了ITO/Ga₂O₃双层膜。用X射线衍射仪、扫描电镜、双光束分光光度计和霍尔效应测试仪研究了衬底温度对ITO/Ga₂O₃双层膜的结构、表面形貌、光学性能和电学性能的影响。双层膜结构受衬底温度的影响,当衬底温度从100C 升高到 350C时,薄膜的电阻率由6.71′10^-3 Ω.cm 降到 1.91′10^-3 Ω.cm。衬底温度300C制备的ITO(22nm)/Ga₂O₃(50nm)双层膜的面电阻为373.3Ω,在300nm波长的深紫外透过率为78.97%。     

ITO薄膜的电阻并联效应研究

采用电子束蒸发镀膜方法在K9玻璃基底上分别镀制了ITO/SiO₂/ITO,ITO/Ti₂O₃/ITO和ITO/MgF₂/ITO结构的多层薄膜,用四探针方块电阻仪测量薄膜表面的方块电阻,用原子力显微镜观测样品的表面微观形貌。结果显示,当ITO薄膜的粗糙度较大且介质薄膜的物理厚度小于100nm时,各层ITO薄膜之间通过山峰状的凸起结构相连通,导致样片表面的方块电阻测量值与各层ITO薄膜电阻的并联值相当。这表明,当ITO薄膜的粗糙度较大且介质薄膜厚度较小时,各层ITO薄膜表现出电阻并联效应。利用多层ITO薄膜的电阻并联效应设计并制备了450～1200nm超宽光谱透明导电薄膜,用四探针方块电阻仪测量了试验样片的表面方块电阻,用紫外-可见-近红外分光光度计测试了样片的光谱透射率。结果显示,在相同表面方块电阻条件下,相比于单层ITO薄膜,利用ITO薄膜电阻并联效应所制备的多层透明导电薄膜具有更高的光谱透射率。     

基于PEDOT:PSS掺杂MoO3修饰有机电致发光器件性能的研究

有机电致发光器件因具有质量轻、亮度高、柔性 、宽视角和响应速度快等优点已经成 为下一代平板显示和照明领域的潜在主流技术。本文证实了MoO₃掺杂于PEDOT:PSS作为空 穴注入 层时,可以改善器件性能。与未掺杂器件相比,掺杂器件的亮度和效率显著提高,启亮电压 降低0.5 V。AFM,透光性和单空穴器件实验表明,当在ITO和空穴传 输层之间插入PEDOT:PSS :MoO₃后,由于修饰了ITO表面膜形貌,增加了绿光区透光性以及降低了空穴注入层电阻 从而提高了器件的性能。     

磷光与荧光相结合的多层白色有机发光器件

采用真空热蒸镀的方法制备了磷光与荧光相结合的 多层白色有机电致发光器件(OLED)。将绿 光磷光掺杂染料掺杂到母体CBP中作为绿光发光层;荧光材料 DCM2以亚单层的方式插入Alq₃中作为红光发光层;DPVBi为蓝光发光层。器件的结构为ITO /NPB(40nm)/DPVBi(d nm)/CBP:Ir(ppy)₃₈%(5nm)/ Alq₃(5nm)/DCM2(0.05nm)/Alq₃(45nm)/LiF(1nm)/AI(200nm)。实验中通过改变蓝光发 光层的厚度,得到了高效率的 白光OLED,器件的最大电流效率可达6.75cd/A,最大功率效率达2.67lm/W,最大亮度 达30440cd/m²。此外,当电压从4V变化到14V时色坐标从(0.59,0.39)变化到(0.35,0.38), 基本处于白光区。本文器件的特点在于其性能可以通过简单调整DPVBi的厚度,避免 了使用多掺杂层工艺的复杂性。     

退火温度对AZO薄膜场发射性能的影响

以纯度为99.95%、Al₂O₃为2wt.%的 ZnO-Al₂O₃金属氧化物为溅射靶材,采用射频(RF)磁控溅射的方法,在玻璃衬 底上制备Al掺杂ZnO(AZO)薄膜,研究其场发射特性和导电性能,并分析了不同的退火温度 对AZO薄膜的形貌、导 电及场发射性能的影响。采用原子力显微镜(AFM)及X射线衍射(XRD)对AZO薄膜表面 形貌与结晶特性 进行测试的结果表明,随着退火温度的升高,AZO薄膜的表面粗糙度随之增大,AZO薄膜的结 晶度变好;场发射 性能研究的结果表明,AZO薄膜的开启电场随着退火温度增加呈先减小后增大的趋势,当 退火温度为300℃时, AZO薄膜样品粗糙度最大,场发射性能最好,开启场强为2.8V/μm, 发光均匀性较好,亮度达到650cd/m²,导电 性能最好,电阻率为5.42×10－4 Ω·cm。     

用于OLED的碳纳米管

首先,介绍了传统柔性有机发光二极管(FOLED)的基本结构及缺点.其次,对氧化铟锡(ITO)玻璃应用于FOLED生产的局限性进行了阐述.然后将碳纳米管(CNT)与ITO薄膜进行了对比,对碳纳米管应用于FOLED制备的可行性进行了分析,并对碳纳米管生产及器件的制备进行了说明.对碳纳米管的分类以及分离进行了简要阐述,着重分...     

基于纳米压印PET基底的高效柔性有机电致发光器件

为了克服现有的以玻璃为基底、ITO为电极的有机电致发光器件（OLED）的韧性差、对裂纹缺陷敏感等固有缺点,对现有的OLED器件结构进行优化。本文提出了以PET为基底,旋涂高导PEDOT：PSS作为阳极的高效柔性OLED器件结构。并在此基础上,通过纳米压印蛾眼模板将光耦合结构引入器件,提高器件的光取出效率。此绿光FOLED器件在亮度为1 000 cd·m^-2时,功率效率为36.10 lm·W^-1。在此基础上,通过纳米压印引入光耦合结构的柔性OLED器件表现出良好的光电性质,在亮度为1 000 cd·m^-2时,功率效率可达到80.46 lm·W^-1。并且这种绿光柔性OLED器件在以器件半边长为曲率半径180°弯折200次后亮度衰减很少。此种高导PEDOT：PSS电极和柔性PET基底可以成为较好的ITO透明电极和刚性玻璃基底的替代物,为生产可穿戴式设备提供了可能。     

Enhancement of hole injection with an ultra-thin Ag2O modified anode in organic light-emitting diodes

The interface between the organic layer and the Indium Tin Oxide (ITO) layer of an organic light-emitting diode (OLED) is crucial to the performance of the device. An ultra-thin Ag₂O film, used as an anode modification layer, has been employed on ITO surface through the UV-ozone treatment of Ag films. The insertion of this thin film with higher work function enhances the hole injection in the organic light-emitting diode and improves the performance of the devices effectively. The maximum electroluminescence (EL) efficiency of the device with the Ag₂O film is 4.95 cd/A, it is about 60% higher than that of the device without it.     

基于液晶衬垫的OLED光萃取

采用旋涂的方法制备了(3,4-亚乙二氧基噻吩) :聚(苯乙烯磺酸)(PEDOT:PSS)薄膜,结合液 晶衬垫(LCS,liquid crystal spacer)对OLED进行光萃取,制备了结构为Glass/ITO/PEDOT:P SS/LCS/NPB(40nm)/Alq₃(40nm)/LiF(1nm )/Al(100nm)的OLED以及其相应的对比 器件。通过测量其电压、 电流、亮度、色坐标和电致发光(EL)光谱等参数,研究了LCS对OLED发光性能 的影响。结果表明, 当引入LCS后,OLED在电压为11V时,最大电流效率达6.15cd/A,比不加 LCS的器件提高了40%;且在电压从7V上升到12V的过程中,器件的色坐标仅从(0.31,0.57) 变化到(0.31,0.56)。究其原因,LCS的引入可以提高透过率,破坏器 件内部光的折射以及全反射条件,并使功能层形成褶皱结构,使更多的光子能够从器件内发 射,也增大了电极的表面积,使电流密度增加,注入的能量提高。     

In‐Situ Switching from Barrier‐Limited to Ohmic Anodes for Efficient Organic Optoelectronics

Injection and extraction of charges through ohmic contacts are required for efficient operation of semiconductor devices. Treatment using polar non‐solvents switches polar anode surfaces, including PEDOT:PSS and ITO, from barrier‐limited hole injection and extraction to ohmic behaviour. This is caused by an in‐situ modification of the anode surface that is buried under a layer of organic semiconductor. The exposure to methanol removes polar hydroxyl groups from the buried anode interface, and permanently increases the work function by 0.2–0.3 eV. In the case of ITO/PEDOT:PSS/PBDTTT‐CT:PC71BM/Al photovoltaic devices, the higher work function promotes charge transfer, leading to p‐doping of the organic semiconductor at the interface. This results in a two‐fold increase in hole extraction rates which raises both the fill factor and the open‐circuit voltage, leading to high power conversion efficiency of 7.4%. In ITO/PEDOT:PSS/F8BT/Al polymer light‐emitting diodes, where the organic semiconductor's HOMO level lies deeper than the anode Fermi level, the increased work function enhances hole injection efficiency and luminance intensity by 3 orders of magnitude. In particular, hole injection rates from PEDOT:PSS anodes are equivalent to those achievable using MoO₃. These findings exemplify the importance of work function control as a tool for improved electrode design, and open new routes to device interfacial optimization using facile solvent processing techniques. Such simple, persistent, treatments pave the way towards low cost manufacturing of efficient organic optoelectronic devices.     

Improved efficiency of indium-tin-oxide-free organic light-emitting devices using PEDOT:PSS/graphene oxide composite anode

We have demonstrated an indium-tin-oxide free organic light-emitting device (OLED) with improved efficiency by doping poly (3,4-ethylene dioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) with graphene oxide (GO) as a composite anode. In comparison with a pure PEDOT:PSS anode, 55% enhancement in efficiency has been obtained for the OLEDs based on the PEDOT:PSS/GO composite anode at an optimal condition. The PEDOT:PSS/GO composite anode shows a lower hole-injection barrier, which contributes to the improved device efficiency. Moreover, both high transmittance and good surface morphology similar to that of the pure PEDOT:PSS film also contribute to the enhanced efficiency. It is obvious that composite anode will generally be applicable in organic optoelectronic devices which require smooth and transparent anode.     

Photolithographic patterning of PEDOT:PSS with a silver interlayer and its application in organic light emitting diodes

A patterning scheme for poly(3,4-ethylenedioxythio-phene):poly(styrenesulfonate) (PEDOT:PSS) is reported. With a silver interlayer, the conductive PEDOT:PSS film can be patterned down to micrometer scales by traditional photolithography, and this patterning scheme can be applied on large-area flexible substrates. Through systematical investigations, the patterning processes have no obvious influence on both the bulk and surface properties of PEDOT:PSS films. Efficient organic light emitting diodes (OLEDs) are realized based on this patterned PEDOT:PSS anode, and they show comparable performance to those devices with an indium tin oxide (ITO) anode. High-resolution OLED pixel arrays are also demonstrated. Our interlayer approach here has an advantage of patterning PEDOT:PSS with high resolution and large scale, and it is also compatible with traditional photolithographic processes which substantially save the capital cost. Results indicate that the photographically patterned conductive PEDOT:PSS film becomes a promising candidate for eletrical eletrode material in organic electronic applications.     

CdS薄层对有机电致发光器件性能的影响

将光电材料硫化镉(CdS)薄层插入到结构为ITO/NPB/Rubrene/NPB/DPVBi/Alq3/LiF/Al的白光有机发光器件(OLED)的Alq3和LiF之间,研究了CdS对OLED性能的影响。结果表明,0.1nm厚的CdS插入Alq3和LiF之间的器件性能最好。器件电压从7 V变化到14 V时,色度均在白光的中心区域;当电压为7V时,器件的最大电流效率为9.09cd/A;当电压为14V时,器件的最大亮度为16 370cd/m2。不加CdS时,当电压为8V时,器件的最大效率为5.16cd/A;当电压为14V时,最大亮度为6 669cd/m2。加CdS的器件比不加CdS的器件最大效率提高了1.76倍,最大亮度提高了2.42倍。     

基于MIC多晶硅薄膜阳极的微腔有机发光器件

通过对溶液法金属诱导晶化多晶硅薄膜制备工艺的优化,制备出性能良好的P型掺杂多晶硅薄膜。厚度为50nm的MICP+-Poly-Si薄膜的方块电阻可降低至400Ω左右,其光学特性表现为在红光区域具有比较高的反射率和很小的吸收率,因此用它替代ITO用作红光OLED的阳极材料。由于此薄膜对可见光比较高的反射率和阴极铝对可见光的高反射性,使之形成了一定Q值的微腔效应。结果显示该器件的最大流明效率为5.88cd/A,比用ITO作阳极制备的OLED提高了57%。进一步优化器件结构,调整发光层在腔中的最佳位置,可以大大增强发光强度,从而可以实现发光强度高、单色性好的红色微腔有机电致发光显示器件。     

Using Self‐Assembling Dipole Molecules to Improve Hole Injection in Conjugated Polymers

Surface modification of indium‐tin‐oxide (ITO)‐coated substrates through the use of self‐assembled monolayers (SAMs) of molecules with permanent dipole moments has been used to control the ITO work function and device performance in polymer light‐emitting diodes based on a polyfluorene hole transporting copolymer. Measured current–voltage characteristics of the devices reveal greatly increased hole injection currents from the SAM‐altered electrodes with higher work function, in agreement with an expected reduction in the barrier for hole injection. In particular, it is shown that the SAM‐modified electrode with the highest work function provides an ohmic contact for hole injection into the studied polymer. Injection from the widely used poly(2,3‐ethylenedioxythiophene)/polystyrenesulphonic acid (PEDOT:PSS)‐coated ITO anode system, is less efficient compared with some of the studied SAM‐coated ITO anodes despite the significantly higher work function measured by a Kelvin probe. This apparently anomalous situation is attributed to the inhomogenities in the injection processes that occur over the area of the device when the PEDOT:PSS‐coated ITO electrode is used.