COWON O2

韩国COWON公司正式发布了最新旗舰PMP机型O2。它搭载了一块4．3英寸1670万色的触摸式屏幕,播放视频文件的分辨率最高达1024×720像素。除了强大的视频功能,O2在音频方面也同样出色,它继续沿用了COWON传统的BBE音效系统诠释出Hi—Fi现场的震撼,而1000mW单声道喇叭还能适应外放的要求。同时,O2还支持TV—OUT输出、图片浏览、文本阅读等功能,     

钙铝硼硅玻璃/氧化铝复合材料性能研究

通过高温熔融法制备的CaO-Al2O3-B2O3-SiO2玻璃粉末与α-Al2O3粉末按照质量分数50:50混合,烧结制备了钙铝硼硅玻璃/氧化铝系低温共烧陶瓷材料,研究了烧结温度对复合材料的物相组成、微观结构、力学性能及介电性能的影响.结果表明,875℃烧结制备的复合材料性能最佳,抗弯强度为164 MPa,介电常数为7.8,介电损耗为0.001 3,热膨胀系数为5.7×10-6/℃,具有良好的综合性能,可用作低温共烧陶瓷基板材料.     

Bi2O3对Al2O3-ZnO-Bi2O3-B2O3低熔玻璃结构和性能的影响

采用传统的熔淬技术制得了低熔Al2O3-ZnO-Bi2O3-B2O3玻璃,研究了玻璃结构、玻璃特征温度、线膨胀系数(α1)以及密度随Bi2O3含量的变化关系.结果表明:随着Bi2O3含量的增加,玻璃网络中[BO4]取代了部分[BO3],玻璃网络中出现Bi-O结构,玻璃中非桥氧的数量也逐渐增多;软化温度(ts)、玻璃化温度(tg)都是先上升后下降,而线膨胀系数先减小后逐渐增大,玻璃密度先是线性增加,然后增加趋势变大.     

Er3+掺杂Bi2O3-B2O3-Ga2O3玻璃光谱性质及热稳定性研究

用高温熔融法制备了Er3 掺杂50Bi2O3-(50-x)B2O3-xGa2O3(x=0,4,8,12,15 mol%)系列玻璃,测试了上述玻璃样品的吸收光谱、荧光光谱、荧光寿命及热稳定性.分别应用Judd-Ofelt理论和McCumber理论计算了Er3 强度参数和受激发射截面.研究发现,当Ga2O3含量在mol 8%时,荧光半高宽(FWHM)、峰值发射截面(σpeak e)和4I13/2能级荧光寿命(τm)均达到了峰值,其FWHM和σpeake分别为81 nm和1.03×10-20cm2.热稳定性则随着Ga2O3含量的增加而改善,析晶开始温度(Tx)和玻璃转变温度(Tg)之间的差值(△T)最高达到了261℃.研究表明,含适当重金属Ga2O3的铋硼酸盐玻璃具有较好的光学性能和热稳定性,适合于作为高增益、低噪声的宽带掺铒光纤放大器的基质材料.     

Bi_2O_3含量对ZnO-BaO-Bi_2O_3-B_2O_3系玻璃性能的影响

用熔融冷却方法制备了ZnO-BaO-Bi2O3-B2O3系低熔点玻璃,研究了Bi2O3含量对所制玻璃热学性能和体积电阻率的影响。结果表明:随着Bi2O3含量的增大,所制玻璃密度和线膨胀系数增大,而膨胀转变温度(tg)、膨胀软化温度(tf)和体积电阻率(ρv)减小;当Bi2O3摩尔分数为0～12%时,随着Bi2O3含量增大,玻璃的tg、tf和ρv显著降低;而当Bi2O3摩尔分数为12%～25%时,这种变化趋势明显减弱。     

BaO Nd2O3 Sm2O3 TiO2薄膜的微波特性

在制作完底电极的LaAlO3(100)衬底上,利用磁控溅射法制备了一层BaO-Nd2O3-Sm2O3-TiO2(BNST)系薄膜,再对薄膜进行退火处理.X线衍射仪(XRD)分析表明,经退火处理的BNST薄膜结晶效果良好.采用薄膜电容结构来实现电容的测量,主要研究了BNST薄膜电容的频率特性.阻抗分析测试和矢量网络分析测试表明,在测试频率为1 MHz时,介电常数为58.3,介电损耗小于2％;在1 GHz的测试频率下,介电常数为57.5,介电损耗小于3％.研究表明,制备的BNST薄膜的频率特性稳定,基本满足微波频率下使用的要求.     

Sm2O3掺杂对BZN基陶瓷介电性能的影响

研究了Sm2O3掺杂的Bi2O3-ZnO-Nb2O5(BZN)基陶瓷(Bi1.5–SmxZn0.5)(Zn0.5Nb1.5)O7(0≤x≤1.5,BSZN)的结构x和介电性能。实验采用传统的固相反应法制备陶瓷样品,XRD分析样品的相结构。结果表明:未掺杂的BZN陶瓷其结构为立方焦绿石单相;当Sm2O3掺杂量较少(0相似文献   

Bi2O3添加剂对Ag2O-Nb2O5-Ta2O5介电性能的影响

以Bi2O3为添加剂，研究其不同质量比对Ag2O-Nb2O5-Ta2O5(ANT)系统介电性能的影响。用XRD衍射和SEM扫描作为技术手段，研究其不同质量比对Ag2O-Nb2O5-Ta2O5系统微观结构的影响。     

Electrodeposited Gd2Zr2O7 and Gd2O3 Buffer Layers for YBa2Cu3O7-δ Superconductors

Non-vacuum electrodeposition (ED) was used to prepare a biaxially textured Gd₂Zr₂O₇ (GZO) and GZO/Gd₂O₃ (GO) buffer layer on a Ni-W substrate. The YBa₂Cu₃O_7−δ (YBCO) superconductor was deposited by pulsed-laser deposition (PLD) on a simplified ED-GZO and ED-GZO/ED-GO buffer layer. The buffer layers and YBCO superconductor were characterized by X-ray diffraction (including θ/2θ, pole figure, omega scans, and phi scans) and atomic force microscopy. Full-width at half maximum values of the omega (ω) and phi (Φ) scans of the electrodeposited GZO and GZO/GO layer were better than those of the Ni-W base substrate. At 77 K and a self-magnetic field, the critical current density of PLD YBCO on the electrodeposited-based buffer layer was 3.3 × 10⁶ A/cm², using the field criterion of 1 μV/cm.     

A comparative investigation of the oxidation of silicon using H2/O2, TCA/O2 and HCl/O2 mixtures

The oxidation of single-crystal silicon wafers has been investigated using an industrial thermal oxidation system. The growth characteristics and electrical properties of the oxides resulting from pure hydrogen/oxygen (H₂/O₂), trichloroethane/oxygen (TCA/O₂) and hydrogen chlorid/oxygen (HCl/O₂) mixtures have been investigated and compared. The addition of both HCl and TCA to oxygen produces higher growth rates and improved electrical characteristics. It is shown that the oxidation rate for TCA/O₂ is approximately 30%–40% higher than for HCl/O₂ and that comparable electrical properties can be readily obtained. A TCA/O₂ ratio of 1 mol% gives the optimum process for VLSI applications, though 3 mol% HCl/O₂ gives comparable results. It is suggested that the overall mechanisms governing the processes are similar. However, the TCA process is a safer and cleaner alternative because it generates HCl in situ in the oxidation chamber.     

BTNT系陶瓷的微波特性研究

研究了BaO-TiO2-Nd2O3-Ta2O5(BTNT)系陶瓷材料的结构和微波特性，实验结果证明：五种组分的BTNT系材料具有钨青铜结构，用此类材料研制的微波单片陶瓷电容器（SLC）具有良好的高频和微波特性。     

K2O-B2O3-SiO2/Al2O3LTCC复合基板材料性能研究

采用K2O-B2O3-SiO2玻璃与Al2O3复合烧结,制备了K2O-B2O3-SiO2/Al2O3低温共烧陶瓷(LTCC)复合基板材料,研究了不同组分含量对体系微观结构和性能的影响。结果表明,复合基板材料的相对介电常数εr和介质损耗均随着Al2O3含量的增加而增加,当Al2O3质量分数为45%时,复合基板材料的介质损耗为0.0085,εr为4.55(1MHz)。抗弯强度可达到160MPa。     

纳米Mg-Al2O3和MgO-Al2O3混合粉末的制备

运用机械合金化方法,对Mg和MgO与Al2O3混合粉末进行球磨后得到了粒度分布均匀的球形纳米粉末。Mg和MgO的加入对混合粉的纳米化过程有不同的影响,MgO的加入有利于混合粉的纳米化。同时过程控制剂乙醇的加入不仅有利于混合粉的纳米化过程,而且有利于纳米粉末的分散。球磨得到的纳米混合粉的差动扫描量热(DSC)分析结果表明,球磨后的纳米粉有较好的热稳定性。     

Cr_2O_3掺杂对钡硼硅微晶玻璃的性能影响

采用固相合成法制备了高膨胀系数钡硼硅微晶玻璃材料。通过对该微晶玻璃进行X线衍射仪(XRD)、扫描电子显微镜(SEM)测试分析研究铬掺杂对BaO-B2O3-SiO2力、热、电性能及微观机理的影响。结果显示,热膨胀系数与介电损耗随Cr2O3含量增加而增大,研究表明,加入Cr2O3会促进该体系晶粒的生长,并促使晶相由石英晶相转变为方石英晶相,方石英热膨胀系数较高,其晶相含量增多导致热膨胀系数增大。该体系Cr2O3质量分数为0.5%时,制备出具有较高热膨胀系数(18.44×10-6/℃),较高抗弯强度(187 MPa),较低相对介电常数(5.5)的封装材料。     

Atomic mechanism of flat-band voltage shifts at La2O3, Al2O3 and Nb2O5 capping layers

We provide the first fully atomistic model of the origin of the flat band voltage shifts due to La- and Al-based capping layers, which are frequently used to control the flat band voltage in high K metal gate stacks. Supercells with substitutional La, Sr, Al or Nb at an HfO₂–SiO₂ interface create dipole layers which shift the flat band voltage in the observed direction. The shift only occurs for substitutions at the interface, not distributed over the HfO₂ layer. The shift is due to an image charge effect combining the metal electronegativity and oxygen density.     

Cathodoluminescence of blue ZnGa2O4 with In2O3-mixed phosphor

In this work, the cathodoluminescence (CL) of the ZnGa₂O₄ phosphor for different composition ratios of ZnO/Ga₂O₃ is examined, and its emission behavior is compared with that of ZnGa₂O₄ with In₂O₃-mixed phosphor. The wavelength and intensity of CL vary with the crystallization of phosphor; as a consequence, the optimal crystallization and luminescence are obtained when the molar ratio of ZnO/Ga₂O₃ is 1. The luminance intensity is 4.2 times enhanced when phosphor is mixed with 12 wt.% of In₂O₃. A maximum luminance of 503 cd/m² and a optimal conductivity of 0.69 (MΩ m)⁻¹ of phosphor are obtained. The CL of blue ZnGa₂O₄ phosphor will be enhanced by In₂O₃ mixed.